JP2012238796A - 半導体装置及び半導体装置の製造方法 - Google Patents
半導体装置及び半導体装置の製造方法 Download PDFInfo
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Abstract
【解決手段】リードフレーム1と、リードフレーム1のダイパッド部1B上に実装された半導体素子3と、半導体素子3の少なくとも一部を被覆する保護膜5と、半導体素子3及び保護膜5を封止している封止樹脂6とを備え、保護膜5と封止樹脂6との間に、保護膜5と封止樹脂6が密着していない空隙層7が少なくとも1箇所存在する、半導体装置である。
【選択図】図1
Description
基板と、
前記基板上に実装された半導体素子と、
前記半導体素子の少なくとも一部を被覆する保護膜と、
前記半導体素子及び前記保護膜を封止している封止樹脂とを備え、
前記保護膜と前記封止樹脂との間に、前記保護膜と前記封止樹脂が密着していない空隙が少なくとも1箇所存在する、半導体装置である。
前記保護膜は、撥水性を有している、第1の本発明の半導体装置である。
前記保護膜は、界面張力エネルギーが15mN/m以上30mN/m以下のシリコーンゴム材料で形成されており、
前記封止樹脂は、界面張力エネルギーが40mN/m以上60mN/m以下である、第1又は2の本発明の半導体装置である。
前記保護膜は、厚みが10μm以上2000μm以下であり、
摂氏25度から摂氏260度にわたり、弾性率が0.5MPa以上10MPa以下の範囲内である、第1〜3のいずれかの本発明の半導体装置である。
前記保護膜は、シリコーンゴム材料で形成されており、
前記シリコーンゴム材料の前駆体が、オルガノポリシロキサン骨格を有し、
前記前駆体は、ヒドロシリル化反応による熱硬化反応で、シロキサン骨格を有するシリコーンゴムへと硬化する、第1の本発明の半導体装置である。
前記空隙の厚みが、0.1μm以上100μm以下である、第1〜5のいずれかの本発明の半導体装置である。
基板に実装された半導体素子の少なくとも一部を被覆するように、保護膜の前駆体を載置する載置工程と、
前記前駆体が重合することによって前記保護膜が形成される重合工程と、
前記半導体素子及び前記保護膜を封止樹脂で封止し、前記保護膜と前記封止樹脂との間に、前記保護膜と前記封止樹脂が少なくとも1箇所以上密着していない空隙を形成する封止工程とを備えた、半導体装置の製造方法である。
前記載置工程では、前記保護膜の前駆体であるシリコーンゴムモノマーが載置され、
前記重合工程では、前記シリコーンゴムモノマーの重合によるゴム化により、前記保護膜が形成される、第7の本発明の半導体装置の製造方法である。
前記封止工程では、
前記封止樹脂との濡れ性が悪い材料を用いて、前記保護膜が形成される、第7の本発明の半導体装置の製造方法である。
基板と、
前記基板上に実装された半導体素子と、
前記半導体素子の少なくとも一部を被覆する保護膜と、
前記半導体素子及び前記保護膜を封止している封止樹脂とを備え、
前記封止樹脂は、エポキシ樹脂であり、
前記保護膜は、シリコーンゴム材料で形成されており、
前記シリコーンゴム材料の前駆体が、オルガノポリシロキサン骨格を有し、
前記前駆体は、ヒドロシリル化反応による熱硬化反応で、シロキサン骨格を有するシリコーンゴムへと硬化する、半導体装置である。
図1は、本発明にかかる実施の形態1における半導体装置の構造を示す断面構成図である。図1に示すように、本実施の形態1の半導体装置は、ダイパッド部1Bと外部端子1Aを有するリードフレーム1と、ダイパッド部1Bにペースト材料2を介して搭載された半導体素子3と、半導体素子3と外部端子1Aを接続する金属ワイヤー4とを備えている。更に、本実施の形態1の半導体装置では、半導体素子3が撥水性シリコーンゴムの保護膜5で被覆されており、リードフレーム1の外部端子1Aが露出され、且つダイパッド部1B、及び半導体素子3、保護膜5及び金属ワイヤー4を覆うように、封止樹脂6で封止されている。尚、金属ワイヤー4の半導体素子3との接続部分4aも撥水性シリコーンゴムの保護膜5に覆われている。そして、保護膜5と封止樹脂6の間に、本発明の空隙の一例に対応する空隙層7が形成されている。尚、本発明の基板の一例は、本実施の形態のリードフレーム1に対応する。又、図1の空隙層7は、その厚みを誇張して図示されており、以下の図面においても同様である。
次に、本発明にかかる実施の形態2について説明する。本実施の形態2の半導体装置では、実施の形態1と異なり半導体素子3が回路基板上に配置されている。尚、実施の形態1と対応する構成については同一の符号が付されている。
次に、本発明にかかる実施の形態3について説明する。本実施の形態3の半導体装置では、実施の形態2と異なり、半導体素子3が回路基板と半田によって電気的及び機械的に接続されている点が異なっている。尚、実施の形態2と対応する構成については同一の符号が付されている。
1A 外部端子
1B ダイパッド部
2 ペースト材料
3 半導体素子
4 金属ワイヤー
5、50、52 保護膜
6 封止樹脂
7、71、72、73 空隙層
8 回路基板
9 電極パッド
10 電極パッド
11 半田接続部
11a 半田ボール
12 アンダーフィル樹脂
12a フィレット部
74 空隙
101 半導体素子
102 回路基板
103 金属ワイヤー
104 封止用樹脂層
105 基板電極
106 マウント材
107 シリコーンゴム
108 封止樹脂
Claims (10)
- 基板と、
前記基板上に実装された半導体素子と、
前記半導体素子の少なくとも一部を被覆する保護膜と、
前記半導体素子及び前記保護膜を封止している封止樹脂とを備え、
前記保護膜と前記封止樹脂との間に、前記保護膜と前記封止樹脂が密着していない空隙が少なくとも1箇所存在する、半導体装置。 - 前記保護膜は、撥水性を有している、請求項1記載の半導体装置。
- 前記保護膜は、界面張力エネルギーが15mN/m以上30mN/m以下のシリコーンゴム材料で形成されており、
前記封止樹脂は、界面張力エネルギーが40mN/m以上60mN/m以下である、請求項1又は2に記載の半導体装置。 - 前記保護膜は、厚みが10μm以上2000μm以下であり、
摂氏25度から摂氏260度にわたり、弾性率が0.5MPa以上10MPa以下の範囲内である、請求項1〜3のいずれかに記載の半導体装置。 - 前記保護膜は、シリコーンゴム材料で形成されており、
前記シリコーンゴム材料の前駆体が、オルガノポリシロキサン骨格を有し、
前記前駆体は、ヒドロシリル化反応による熱硬化反応で、シロキサン骨格を有するシリコーンゴムへと硬化する、請求項1に記載の半導体装置。 - 前記空隙の厚みが、0.1μm以上100μm以下である、請求項1〜5のいずれかに記載の半導体装置。
- 基板に実装された半導体素子の少なくとも一部を被覆するように、保護膜の前駆体を載せる載置工程と、
前記前駆体が重合することによって前記保護膜が形成される重合工程と、
前記半導体素子及び前記保護膜を封止樹脂で封止し、前記保護膜と前記封止樹脂との間に、前記保護膜と前記封止樹脂が少なくとも1箇所以上密着していない空隙を形成する封止工程とを備えた、半導体装置の製造方法。 - 前記載置工程では、前記保護膜の前駆体であるシリコーンゴムモノマーが載置され、
前記重合工程では、前記シリコーンゴムモノマーの重合によるゴム化により、前記保護膜が形成される、請求項7記載の半導体装置の製造方法。 - 前記封止工程では、
前記封止樹脂との濡れ性が悪い材料を用いて、前記保護膜が形成される、請求項7記載の半導体装置の製造方法。 - 基板と、
前記基板上に実装された半導体素子と、
前記半導体素子の少なくとも一部を被覆する保護膜と、
前記半導体素子及び前記保護膜を封止している封止樹脂とを備え、
前記封止樹脂は、エポキシ樹脂であり、
前記保護膜は、シリコーンゴム材料で形成されており、
前記シリコーンゴム材料の前駆体が、オルガノポリシロキサン骨格を有し、
前記前駆体は、ヒドロシリル化反応による熱硬化反応で、シロキサン骨格を有するシリコーンゴムへと硬化する、半導体装置。
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JP2015041701A (ja) * | 2013-08-22 | 2015-03-02 | Tdk株式会社 | 磁気センサ |
JP2015106649A (ja) * | 2013-11-29 | 2015-06-08 | 株式会社デンソー | 電子装置 |
WO2016108261A1 (ja) * | 2014-12-29 | 2016-07-07 | 三菱電機株式会社 | パワーモジュール |
JP2018186292A (ja) * | 2018-07-17 | 2018-11-22 | 株式会社東芝 | 半導体装置および光結合装置 |
JP2019503277A (ja) * | 2016-01-13 | 2019-02-07 | 日本テキサス・インスツルメンツ株式会社 | 応力による影響を受け易いmemsをパッケージングするための構造及び方法 |
JP2020031129A (ja) * | 2018-08-22 | 2020-02-27 | トヨタ自動車株式会社 | 半導体装置 |
JP2020102517A (ja) * | 2018-12-21 | 2020-07-02 | トヨタ自動車株式会社 | 電子回路装置 |
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JP2018186292A (ja) * | 2018-07-17 | 2018-11-22 | 株式会社東芝 | 半導体装置および光結合装置 |
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