JP2019503277A - 応力による影響を受け易いmemsをパッケージングするための構造及び方法 - Google Patents
応力による影響を受け易いmemsをパッケージングするための構造及び方法 Download PDFInfo
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Abstract
Description
Claims (20)
- 集積されたマイクロエレクトロメカニカルシステム(MEMS)デバイスをパッケージングするための方法であって、
第1及び第2の端子を備える回路要素を含む半導体チップを提供することであって、前記半導体チップの表面が、前記MEMSのフットプリントより大きく、且つ、前記第1の端子を含むエリアを囲む、ポリイミドリングを有し、前記ポリイミドリングの表面が、低減されたエネルギーを有する、前記半導体チップを提供すること、
リードを有する基板のアッセンブリパッド上に前記半導体チップを取り付けること、
前記MEMSデバイスを、低弾性シリコーン材料の層を用いて前記ポリイミドリング内部の前記半導体チップのエリア上に取り付けること、
前記MEMSの端子から前記ポリイミドリング内部の前記第1の端子までボンディングワイヤを掛ける(span)ことと、
前記MEMS及び前記ワイヤのスパンの上に低弾性シリコーン材料をディスペンスすることによってドーム形状の塊(glob)を形成して、前記塊を前記ポリイミドリング内部の前記チップ表面エリアに制限することであって、前記シリコーン材料が、疎水性であり、エポキシベースのモールディング化合物に非接着性である、前記塊を形成すること、
前記シリコーン塊を硬化させることであって、それにより、前記MEMS及び前記半導体チップの集積を完成させること、
モールディング化合物への接着を高めるために、全ての表面をプラズマエッチングに晒すこと、
前記塊の表面上に前記低弾性シリコーン材料の層をディスペンスすること、
前記シリコーン材料の層を硬化させること、及び
前記塊により埋め込まれる前記MEMSと、前記回路要素チップと、前記基板の部分とを含む前記集積されたデバイスを重合体モールディング化合物内に封止し、それにより、前記集積されたデバイスをパッケージングすること、
を含む、方法。 - 請求項1の方法であって、前記低弾性シリコーン材料が10MPaより小さい弾性を有する、方法。
- 請求項1の方法であって、前記ポリイミドリングの前記低減された表面エネルギーが、前記ポリイミド表面を非可溶性に及びシリコーン材料に対して反発性にし、そのため、ディスペンスされるときに前記シリコーン材料が前記リング表面にわたって流出することを防ぐ、方法。
- 請求項1の方法であって、更に、ドーム形状の塊を形成する前記プロセスの前に、前記チップ回路要素の前記第2の端子を前記基板のそれぞれのリードにワイヤボンディングするプロセスを含む、方法。
- 請求項1の方法であって、前記基板が、チップアッセンブリパッド及びリードを有するリードフレームである、方法。
- 請求項5の方法であって、前記リードフレームがクワッドフラットノーリード(QFN)リードフレームである、方法。
- 請求項1の方法であって、前記重合体モールディング化合物が、無機充填材粒子を含むエポキシベースの熱硬化性モールディング配合物である、方法。
- 請求項1の方法であって、前記チップを取り付ける前記プロセスが、エポキシベースの重合体化合物を用いる、方法。
- 請求項1の方法であって、半導体チップを提供する前記プロセスの前に、更に、
第1及び第2の端子を備える複数の集積回路要素チップを有するシリコンウェハを提供するプロセス、
前記複数の集積回路要素チップの表面の上にポリイミド材料の層を被覆するプロセス、
各チップ上のリングを形成するために前記ポリイミド材料の層をパターニングするプロセスであって、各リングが、前記MEMSのフットプリントより大きく、且つ、前記第1の端子を含むエリアを囲む、前記パターニングするプロセスがフォトリソグラフィ法を用い、前記フォトリソグラフィ法が、フォトレジスト層をスピンオンするプロセス、及び前記フォトレジスト層をマスキングし、露光し、現像するプロセスを含む、前記パターニングするプロセス、及び
前記ポリイミド材料に、第1の時間硬化するプロセス、アッシングするプロセス、及び第2の時間硬化するプロセスを連続的に受けさせることによって、前記ポリイミドリングの前記表面エネルギーを低減させるプロセス、
を含む、方法。 - 請求項9に記載の方法であって、前記アッシングプロセスが、酸素プラズマ及び高められた温度を含む、方法。
- 集積されたマイクロエレクトロメカニカルシステム(MEMS)デバイスをパッケージングするための方法であって、
第1及び第2の端子を備える回路要素を含む半導体チップを提供することであって、前記半導体チップの表面が、前記MEMSのフットプリントより大きく、且つ、前記第1の端子を含むエリアを囲む、ポリイミドリングを有し、前記ポリイミドリングの表面が、低減されたエネルギーを有する、前記半導体チップを提供すること、
リードを有する基板のアッセンブリパッド上に前記半導体チップを取り付けること、
低弾性シリコーン材料の層を用いて前記半導体チップの前記ポリイミドリング内部のエリア上に前記MEMSデバイスを取り付けること、
前記MEMSの端子から前記ポリイミドリング内部の前記第1の端子までボンディングワイヤをかけること、
前記MEMS及び前記ワイヤのスパンの上に低弾性シリコーン材料をディスペンスすることによりドーム形状の塊を形成して、前記塊を前記ポリイミドリング内部の前記チップ表面エリアに制約することであって、前記シリコーン材料が、疎水性であり、エポキシベースのモールディング化合物に対して非接着性である、前記塊を形成すること、
前記シリコーンの塊を硬化させ、それにより、前記MEMS及び前記半導体チップの集積を完了すること、
前記塊の前記表面上にエポキシ化合物の層をディスペンスすること、
前記エポキシ化合物の層を硬化させること、
モールディング化合物への接着を高めるため、全ての表面をプラズマエッチングに晒すこと、及び
前記塊により埋め込まれる前記MEMSと、前記回路要素チップと、前記基板の部分とを含む前記集積されたデバイスを重合体モールディング化合物内に封止し、それにより、前記集積されたデバイスをパッケージングすること、
を含む、方法。 - 請求項11の方法であって、前記低弾性シリコーン材料が10MPa未満の弾性を有する、方法。
- 請求項11の方法であって、ドーム形状の塊を形成する前記プロセスの前に、更に、前記回路要素チップの端子を前記基板のコンタクトパッドにワイヤボンディングするプロセスを含む、方法。
- 請求項11の方法であって、半導体チップを提供する前記プロセスの前に、更に、
第1及び第2の端子を備える複数の集積回路要素チップを有するシリコンウェハを提供するプロセス、
前記複数の集積回路要素チップの表面の上のポリイミド材料の層を被覆するプロセス、
各チップ上にリングを形成するために前記ポリイミド材料の層をパターニングするプロセスであって、各リングが、前記MEMSのフットプリントより大きく、且つ、前記第1の端子を含むエリアを囲み、前記パターニングプロセスがフォトリソグラフィ法を用い、前記フォトリソグラフィ法が、フォトレジスト層をスピンオンするプロセス、及び、前記フォトレジスト層をマスキングし、露光し、現像するプロセスを含む、前記パターニングするプロセス、及び
前記ポリイミド材料に、第1の時間硬化するプロセス、アッシングするプロセス、及び第2の時間硬化するプロセスを連続的に受けさせることによって、前記ポリイミドリングの前記表面エネルギーを低減させるプロセス、
を含む、方法。 - パッケージングされたマイクロエレクトロメカニカルシステム(MEMS)デバイスであって、
第1及び第2の端子を備える回路要素を含む半導体チップであって、前記半導体チップが、リードを有する基板のパッドに取り付けられ、前記半導体チップの前記第2の端子が前記リードにワイヤボンディングされる、前記半導体チップ、
低弾性シリコーン化合物の層により前記チップの表面に垂直に取り付けられるMEMSデバイスであって、前記MEMSの端子が、前記半導体チップの前記第1のチップ端子までわたるワイヤによりにボンディングされる、前記MEMSデバイス、
前記MEMSデバイス及び前記第1の端子を囲む前記チップの表面上のポリイミドリングであって、前記ポリイミドリングの表面がシリコーン化合物に親和性がない、前記ポリイミドリング、
前記MEMS及び前記MEMSワイヤのスパンを覆う、硬化された低弾性シリコーン材料のドーム形状の塊であって、前記塊が、前記ポリイミドリング内部の前記チップ表面エリアに制約され、前記塊の表面が、エポキシベースのモールディング化合物に対して非接着性である、前記塊、及び
前記MEMSと、前記回路要素チップと、前記基板の一部とを埋め込む前記塊の垂直アッセンブリを封止する重合体モールディング化合物のパッケージであって、前記モールディング化合物が、前記塊の表面に非接着性であるが、全ての他の表面に接着する、前記重合体モールディング化合物のパッケージ、
を含む、MEMSデバイス。 - 請求項15のMEMSデバイスであって、前記MEMSが、応力による影響を受け易い、MEMSデバイス。
- 請求項15のMEMSデバイスであって、前記低弾性シリコーン化合物が10MPa未満の弾性を有する、MEMSデバイス。
- 請求項15のMEMSデバイスであって、前記重合体モールディング化合物がエポキシベースの熱硬化性モールディング化合物である、MEMSデバイス。
- 請求項15のMEMSデバイスであって、前記ポリイミドリングの前記親和性のない表面が、前記ポリイミド化合物の第1の硬化、アッシング、及び第2の硬化のプロセスシーケンスからつくられる、MEMSデバイス。
- 請求項15のMEMSデバイスであって、前記塊のモールディング化合物に対する非接着の表面特性が、プラズマ活性化、及びその後続く、低粘性及び低弾性シリコーンの付加的な表面層の堆積を含むプロセスにより、又は前記重合体モールディング化合物とマージされるべきエポキシ層の堆積を含むプロセスにより達成される、MEMSデバイス。
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US20200354214A1 (en) | 2020-11-12 |
CN116692765A (zh) | 2023-09-05 |
EP3403275A1 (en) | 2018-11-21 |
US11498831B2 (en) | 2022-11-15 |
US9896330B2 (en) | 2018-02-20 |
US20180127266A1 (en) | 2018-05-10 |
EP3403275A4 (en) | 2019-03-06 |
JP2022008991A (ja) | 2022-01-14 |
US20190169019A1 (en) | 2019-06-06 |
CN108475645A (zh) | 2018-08-31 |
US10233074B2 (en) | 2019-03-19 |
US20170197823A1 (en) | 2017-07-13 |
US10723616B2 (en) | 2020-07-28 |
JP7298856B2 (ja) | 2023-06-27 |
JP6974685B2 (ja) | 2021-12-01 |
CN108475645B (zh) | 2023-07-18 |
WO2017123998A1 (en) | 2017-07-20 |
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