JP2008512647A - 空洞ハウジングおよびセンサチップを含む半導体センサ装置、および、その製造方法 - Google Patents
空洞ハウジングおよびセンサチップを含む半導体センサ装置、および、その製造方法 Download PDFInfo
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Abstract
Description
Claims (15)
- 空洞ハウジング(1)とセンサ領域(4)を有するセンサチップ(3)とを備えた半導体センサ装置であって、前記センサチップは、前記ハウジング(1)の空洞(2)内に設けられており、前記空洞ハウジング(1)は、周囲(6)への開口(5)を有しており、前記センサ領域(4)は、前記開口(5)に対向しており、前記センサチップ(3)は、前記ハウジング(1)の前記空洞(2)内において、あらゆる側面がゴム製で弾力性のある組成物(7)に埋め込まれている半導体センサ装置。
- 前記ゴム製で弾力性のある組成物(7)は、その上に前記センサチップ(3)の背面側(10)が配置されており、前記センサチップ(3)の下側の下部領域 (8)と、前記センサチップ(3)のエッジサイド(11、12)と上面 (13)とが埋め込まれた上部領域 (9)との2つの領域(8、9)を有する請求項1記載の半導体センサ装置。
- 前記ゴム製で弾力性のある組成物(7)は、光学的に透明なエラストマーを有している請求項1または2記載の半導体センサ装置。
- 前記ゴム製で弾力性のある組成物(7)は、シリコンゴムを有している先行する請求項のうちのいずれか1項記載の半導体センサ装置。
- 前記センサチップ(3)は、半導体センサ装置(20)の外部接触部(16)に、ボンディングワイヤ(14)と空洞ハウジング(1)を通る貫通接触部(15)を介して、電気的に接続されている先行する請求項のうちのいずれか1項記載の半導体センサ装置。
- 前記空洞ハウジング(1)は、底部(17)を有し、前記底部(17)は、貫通開口部(18)を有する先行する請求項のうちのいずれか1項記載の半導体センサ装置。
- 請求項1〜6のいずれか1項に記載の半導体センサ装置のための空洞ハウジングであって、
前記空洞ハウジング(1)は、少なくとも1つの底部(17)と前記空洞(2)を区切る側壁(19)とを有し、スペーサ(22)の除去可能な端部(21)が底部(17)から突出しており、前記スペーサ(22)の前記端部(21)上に位置づけられたセンサチップ(3)上のボンディングワイヤ(14)の構成及び適合のための隣接点を形成する空洞ハウジング。 - 前記スペーサ(22)は、前記底部(17)を通って前記空洞(2)に突き出たピンである請求項7記載の半導体センサ装置。
- 前記底部(17)から突き出た前記スペーサ(22)の端部(21)は、前記ゴム製で弾力性のある組成物(7)によって封止されている請求項7または8に記載の半導体センサ装置。
- 空洞ハウジング(1)とセンサ領域(4)を有するセンサチップ(3)とを備えた半導体センサ装置(20)の製造方法であって、前記センサチップは、前記ハウジング(1)の前記空洞(2)に設けられており、
内部導体トラック(23)と外部接触部(16)と空洞底部(17)と、前記空洞底部(17)を囲む側壁(19)と、前記空洞底部(17)から突出するスペーサ(22)の端部(17)とを備えた空洞ハウジング(1)を形成し、前記スペーサ(22)の配置及び寸法は、センサチップ(3)の背面側(10)の領域範囲に適合されており、前記スペーサ(22)の端部(21)は、前記スペーサ(22)の端部(21)上に位置するセンサチップ(3)上のボンディングワイヤ(14)の構成及び適合のための隣接点を形成しており、
前記空洞ハウジング(1)の前記空洞(2)の底部(17)を、少なくとも前記スペーサ(22)の端部(21)までゴム製で弾力性のある組成物(7)で満たし、
センサチップ(3)をその背面側(10)で前記スペーサ(22)の端部(21)に当てて、前記ゴム製で弾力性のある組成物(7)上に前記センサチップ(3)を固定し、
前記センサチップ(3)の接触領域(24)上にボンディングワイヤ(14)を適合させ、
前記ボンディングワイヤ(14)と前記センサチップ(3)とを前記ゴム製で弾力性のある組成物(7)に埋め込み、
前記底部(17)から前記スペーサ(22)を除去して前記空洞ハウジング(1)の底部(17)に貫通開口部(18)を形成する方法。 - 内部導体トラック(23)と外部接触部(16)とを備えた空洞ハウジング(1)を形成するために、まず、複数のハウジング位置を備えたリードフレームを製造し、前記ハウジング位置内にキャストインスペーサを備えた前記側壁(19)と前記底部(17)とが、注入成形技術によって製造され、この目的のために、注入成形する前に注入型の中に前記スペーサ(22)が配置される請求項10記載の方法。
- 前記リードフレームは、注入成形動作の後に、前記リードフレームとともに完成された半導体センサ装置(20)から除去ざれるスペーサ(22)を有している請求項10または請求項11記載の方法。
- ディスペンス技術によって、前記空洞ハウジング(1)の空洞の底部(17)をゴム製で弾力性のある組成物(7)で満たす請求項10〜12のいずれか1項記載の方法。
- 熱圧着または熱圧着ボンディングによって、ボンディングワイヤ(14)を前記センサチップ(3)の接触領域(24)に適合させる請求項10〜13のいずれか1項記載の方法。
- エッチング技術によって、前記スペーサ(22)を除去する請求項10〜14のいずれか1項記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE200410043663 DE102004043663B4 (de) | 2004-09-07 | 2004-09-07 | Halbleitersensorbauteil mit Hohlraumgehäuse und Sensorchip und Verfahren zur Herstellung eines Halbleitersensorbauteils mit Hohlraumgehäuse und Sensorchip |
DE102004043663.0 | 2004-09-07 | ||
PCT/DE2005/001453 WO2006026951A1 (de) | 2004-09-07 | 2005-08-18 | Halbleitersensorbauteil mit hohlraumgehäuse und sensorchip und verfahren zur herstellung desselben |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20120004335A (ko) * | 2010-07-06 | 2012-01-12 | 로베르트 보쉬 게엠베하 | 진동 댐핑형 부품의 제조 방법 |
US9863828B2 (en) | 2014-06-18 | 2018-01-09 | Seiko Epson Corporation | Physical quantity sensor, electronic device, altimeter, electronic apparatus, and mobile object |
JP2019503277A (ja) * | 2016-01-13 | 2019-02-07 | 日本テキサス・インスツルメンツ株式会社 | 応力による影響を受け易いmemsをパッケージングするための構造及び方法 |
Families Citing this family (70)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7345671B2 (en) * | 2001-10-22 | 2008-03-18 | Apple Inc. | Method and apparatus for use of rotational user inputs |
US20070085841A1 (en) * | 2001-10-22 | 2007-04-19 | Apple Computer, Inc. | Method and apparatus for accelerated scrolling |
US7312785B2 (en) | 2001-10-22 | 2007-12-25 | Apple Inc. | Method and apparatus for accelerated scrolling |
US7333092B2 (en) | 2002-02-25 | 2008-02-19 | Apple Computer, Inc. | Touch pad for handheld device |
US20060181517A1 (en) * | 2005-02-11 | 2006-08-17 | Apple Computer, Inc. | Display actuator |
US20070152977A1 (en) | 2005-12-30 | 2007-07-05 | Apple Computer, Inc. | Illuminated touchpad |
US7499040B2 (en) | 2003-08-18 | 2009-03-03 | Apple Inc. | Movable touch pad with added functionality |
US7495659B2 (en) | 2003-11-25 | 2009-02-24 | Apple Inc. | Touch pad for handheld device |
US8059099B2 (en) | 2006-06-02 | 2011-11-15 | Apple Inc. | Techniques for interactive input to portable electronic devices |
EP1779228B1 (en) | 2004-08-16 | 2012-04-11 | Apple Inc. | A method of increasing the spatial resolution of touch sensitive devices |
DE102005015455B4 (de) | 2005-04-04 | 2021-03-18 | Infineon Technologies Ag | Kunststoffgehäuse und Halbleiterbauteil mit derartigem Kunststoffgehäuse sowie ein Verfahren zur Herstellung eines Kunststoffgehäuses |
DE102005015454B4 (de) | 2005-04-04 | 2010-02-18 | Infineon Technologies Ag | Halbleitersensorbauteil mit Hohlraumgehäuse und Sensorchip sowie Verfahren zur Herstellung desselben |
US7880729B2 (en) | 2005-10-11 | 2011-02-01 | Apple Inc. | Center button isolation ring |
US20070152983A1 (en) | 2005-12-30 | 2007-07-05 | Apple Computer, Inc. | Touch pad with symbols based on mode |
DE102006011753B4 (de) | 2006-03-13 | 2021-01-28 | Infineon Technologies Ag | Halbleitersensorbauteil, Verfahren zur Herstellung eines Nutzens und Verfahren zur Herstellung von Halbleitersensorbauteilen |
US9360967B2 (en) | 2006-07-06 | 2016-06-07 | Apple Inc. | Mutual capacitance touch sensing device |
US8022935B2 (en) | 2006-07-06 | 2011-09-20 | Apple Inc. | Capacitance sensing electrode with integrated I/O mechanism |
US8743060B2 (en) | 2006-07-06 | 2014-06-03 | Apple Inc. | Mutual capacitance touch sensing device |
US7795553B2 (en) | 2006-09-11 | 2010-09-14 | Apple Inc. | Hybrid button |
US8274479B2 (en) * | 2006-10-11 | 2012-09-25 | Apple Inc. | Gimballed scroll wheel |
US20080088597A1 (en) * | 2006-10-11 | 2008-04-17 | Apple Inc. | Sensor configurations in a user input device |
US20080088600A1 (en) * | 2006-10-11 | 2008-04-17 | Apple Inc. | Method and apparatus for implementing multiple push buttons in a user input device |
US8482530B2 (en) | 2006-11-13 | 2013-07-09 | Apple Inc. | Method of capacitively sensing finger position |
US8683378B2 (en) | 2007-09-04 | 2014-03-25 | Apple Inc. | Scrolling techniques for user interfaces |
US7910843B2 (en) | 2007-09-04 | 2011-03-22 | Apple Inc. | Compact input device |
US20090058801A1 (en) * | 2007-09-04 | 2009-03-05 | Apple Inc. | Fluid motion user interface control |
US20090073130A1 (en) * | 2007-09-17 | 2009-03-19 | Apple Inc. | Device having cover with integrally formed sensor |
DE102007057441B4 (de) | 2007-11-29 | 2019-07-11 | Robert Bosch Gmbh | Verfahren zur Herstellung eines mikromechanischen Bauelements mit einem volumenelastischen Medium und mikromechanischen Bauelement |
US8416198B2 (en) | 2007-12-03 | 2013-04-09 | Apple Inc. | Multi-dimensional scroll wheel |
US8125461B2 (en) | 2008-01-11 | 2012-02-28 | Apple Inc. | Dynamic input graphic display |
US8820133B2 (en) | 2008-02-01 | 2014-09-02 | Apple Inc. | Co-extruded materials and methods |
DE102008029192A1 (de) * | 2008-03-13 | 2009-09-24 | Epcos Ag | Fühler zum Erfassen einer physikalischen Größe und Verfahren zur Herstellung des Fühlers |
US9454256B2 (en) | 2008-03-14 | 2016-09-27 | Apple Inc. | Sensor configurations of an input device that are switchable based on mode |
TW200952142A (en) * | 2008-06-13 | 2009-12-16 | Phoenix Prec Technology Corp | Package substrate having embedded semiconductor chip and fabrication method thereof |
US20100058251A1 (en) * | 2008-08-27 | 2010-03-04 | Apple Inc. | Omnidirectional gesture detection |
US20100060568A1 (en) * | 2008-09-05 | 2010-03-11 | Apple Inc. | Curved surface input device with normalized capacitive sensing |
US8816967B2 (en) | 2008-09-25 | 2014-08-26 | Apple Inc. | Capacitive sensor having electrodes arranged on the substrate and the flex circuit |
DE102008043517B4 (de) | 2008-11-06 | 2022-03-03 | Robert Bosch Gmbh | Sensormodul und Verfahren zur Herstellung eines Sensormoduls |
CH699977A8 (de) * | 2008-11-25 | 2010-08-31 | Baumer Innotec Ag | Vorrichtung und Verfahren zum Anordnen eines Gehäuses in einer vorgegebenen Lage relativ zu einem Referenzobjekt |
US8395590B2 (en) | 2008-12-17 | 2013-03-12 | Apple Inc. | Integrated contact switch and touch sensor elements |
DE102009002584A1 (de) * | 2009-04-23 | 2010-10-28 | Robert Bosch Gmbh | Sensoranordnung |
US9354751B2 (en) | 2009-05-15 | 2016-05-31 | Apple Inc. | Input device with optimized capacitive sensing |
US8872771B2 (en) | 2009-07-07 | 2014-10-28 | Apple Inc. | Touch sensing device having conductive nodes |
US8551814B2 (en) * | 2010-03-11 | 2013-10-08 | Freescale Semiconductor, Inc. | Method of fabricating a semiconductor device that limits damage to elements of the semiconductor device that are exposed during processing |
US8191423B2 (en) * | 2010-03-29 | 2012-06-05 | Continental Automotive Systems, Inc. | Grooved structure for die-mount and media sealing |
JP5595145B2 (ja) | 2010-07-02 | 2014-09-24 | 株式会社デンソー | 半導体力学量センサ |
JP2012073233A (ja) * | 2010-08-31 | 2012-04-12 | Mitsumi Electric Co Ltd | センサ装置及び半導体センサ素子の実装方法 |
US8454789B2 (en) * | 2010-11-05 | 2013-06-04 | Raytheon Company | Disposable bond gap control structures |
DE102011003195B4 (de) * | 2011-01-26 | 2019-01-10 | Robert Bosch Gmbh | Bauteil und Verfahren zum Herstellen eines Bauteils |
US9324586B2 (en) * | 2011-08-17 | 2016-04-26 | Infineon Technologies Ag | Chip-packaging module for a chip and a method for forming a chip-packaging module |
DE102012215449A1 (de) * | 2012-08-31 | 2014-03-27 | Osram Opto Semiconductors Gmbh | Gehäuse für ein elektronisches bauelement, elektronische baugruppe, verfahren zum herstellen eines gehäuses für ein elektronisches bauelement und verfahren zum herstellen einer elektronischen baugruppe |
US9510495B2 (en) * | 2012-11-27 | 2016-11-29 | Freescale Semiconductor, Inc. | Electronic devices with cavity-type, permeable material filled packages, and methods of their manufacture |
US8937380B1 (en) * | 2013-08-30 | 2015-01-20 | Infineon Technologies Austria Ag | Die edge protection for pressure sensor packages |
DE102013222307A1 (de) * | 2013-11-04 | 2015-05-07 | Robert Bosch Gmbh | Mikroelektromechanische Sensoranordnung und Verfahren zum Herstellen einer mikroelektromechanischen Sensoranordnung |
FR3015030B1 (fr) * | 2013-12-12 | 2016-11-04 | Sc2N Sa | Dispositif comportant un capteur protege par de la resine |
DE102014105861B4 (de) * | 2014-04-25 | 2015-11-05 | Infineon Technologies Ag | Sensorvorrichtung und Verfahren zum Herstellen einer Sensorvorrichtung |
CN204732405U (zh) | 2014-06-12 | 2015-10-28 | 意法半导体(格勒诺布尔2)公司 | 集成电路芯片的堆叠和电子装置 |
US9598280B2 (en) * | 2014-11-10 | 2017-03-21 | Nxp Usa, Inc. | Environmental sensor structure |
US10060820B2 (en) * | 2015-12-22 | 2018-08-28 | Continental Automotive Systems, Inc. | Stress-isolated absolute pressure sensor |
US11211305B2 (en) | 2016-04-01 | 2021-12-28 | Texas Instruments Incorporated | Apparatus and method to support thermal management of semiconductor-based components |
CN107290096A (zh) * | 2016-04-11 | 2017-10-24 | 飞思卡尔半导体公司 | 具有膜片的压力感测集成电路器件 |
US10861796B2 (en) | 2016-05-10 | 2020-12-08 | Texas Instruments Incorporated | Floating die package |
US10132705B2 (en) * | 2016-07-19 | 2018-11-20 | Kulite Semiconductor Products, Inc. | Low-stress floating-chip pressure sensors |
US10179730B2 (en) * | 2016-12-08 | 2019-01-15 | Texas Instruments Incorporated | Electronic sensors with sensor die in package structure cavity |
US10074639B2 (en) | 2016-12-30 | 2018-09-11 | Texas Instruments Incorporated | Isolator integrated circuits with package structure cavity and fabrication methods |
US10121847B2 (en) | 2017-03-17 | 2018-11-06 | Texas Instruments Incorporated | Galvanic isolation device |
TWI663692B (zh) * | 2018-02-27 | 2019-06-21 | 菱生精密工業股份有限公司 | Pressure sensor package structure |
US20200031661A1 (en) * | 2018-07-24 | 2020-01-30 | Invensense, Inc. | Liquid proof pressure sensor |
DE102018222781A1 (de) * | 2018-12-21 | 2020-06-25 | Robert Bosch Gmbh | Drucksensoranordnung |
DE102020207799A1 (de) | 2020-06-24 | 2021-12-30 | Robert Bosch Gesellschaft mit beschränkter Haftung | MEMS-Modul |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6269537A (ja) * | 1985-09-24 | 1987-03-30 | Hitachi Ltd | 半導体装置 |
JPH0645383A (ja) * | 1992-07-27 | 1994-02-18 | Nec Corp | 樹脂封止方法及びその金型 |
JPH09138172A (ja) * | 1995-11-14 | 1997-05-27 | Fujikura Ltd | 半導体圧力センサおよびその製造方法 |
JPH11274196A (ja) * | 1998-03-26 | 1999-10-08 | Seiko Epson Corp | 半導体装置の製造方法およびモールドシステム並びに半導体装置 |
JP2002026170A (ja) * | 2000-07-06 | 2002-01-25 | Oki Electric Ind Co Ltd | 樹脂封止型半導体装置及びその製造方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3885304A (en) * | 1972-03-23 | 1975-05-27 | Bosch Gmbh Robert | Electric circuit arrangement and method of making the same |
JPS60136254A (ja) | 1983-12-23 | 1985-07-19 | Toshiba Corp | 固体撮像装置およびその製造方法 |
US5173766A (en) * | 1990-06-25 | 1992-12-22 | Lsi Logic Corporation | Semiconductor device package and method of making such a package |
US5243756A (en) * | 1991-06-28 | 1993-09-14 | Digital Equipment Corporation | Integrated circuit protection by liquid encapsulation |
US5389738A (en) * | 1992-05-04 | 1995-02-14 | Motorola, Inc. | Tamperproof arrangement for an integrated circuit device |
DE4238113A1 (de) | 1992-11-12 | 1994-05-19 | Mikroelektronik Und Technologi | Anordnung zur spannungsfreien Chipmontage |
US5686698A (en) * | 1994-06-30 | 1997-11-11 | Motorola, Inc. | Package for electrical components having a molded structure with a port extending into the molded structure |
EP0714125B1 (en) * | 1994-11-24 | 1999-12-29 | Dow Corning Toray Silicone Company Limited | Method of fabricating a semiconductor device |
JPH1197656A (ja) * | 1997-09-22 | 1999-04-09 | Fuji Electric Co Ltd | 半導体光センサデバイス |
US6260417B1 (en) * | 1999-10-13 | 2001-07-17 | Denso Corporation | Semiconductor pressure sensor device with multi-layered protective member that reduces void formation |
JP2001118967A (ja) * | 1999-10-19 | 2001-04-27 | Sanyo Electric Co Ltd | 固体撮像素子のパッケージ構造 |
US6841412B1 (en) * | 1999-11-05 | 2005-01-11 | Texas Instruments Incorporated | Encapsulation for particle entrapment |
US6483030B1 (en) * | 1999-12-08 | 2002-11-19 | Amkor Technology, Inc. | Snap lid image sensor package |
JP2002005951A (ja) * | 2000-06-26 | 2002-01-09 | Denso Corp | 半導体力学量センサ及びその製造方法 |
JP2002039887A (ja) | 2000-07-25 | 2002-02-06 | Denso Corp | 半導体力学量センサおよびその製造方法 |
JP2002107249A (ja) | 2000-10-03 | 2002-04-10 | Fuji Electric Co Ltd | 半導体圧力センサ |
JP3888228B2 (ja) * | 2002-05-17 | 2007-02-28 | 株式会社デンソー | センサ装置 |
DE10223035A1 (de) | 2002-05-22 | 2003-12-04 | Infineon Technologies Ag | Elektronisches Bauteil mit Hohlraumgehäuse, insbesondere Hochfrequenz-Leistungsmodul |
DE10228593A1 (de) * | 2002-06-26 | 2004-01-15 | Infineon Technologies Ag | Elektronisches Bauteil mit einer Gehäusepackung |
DE10238581B4 (de) * | 2002-08-22 | 2008-11-27 | Qimonda Ag | Halbleiterbauelement |
KR20040033193A (ko) | 2002-10-11 | 2004-04-21 | (주)그래픽테크노재팬 | 이미지 센서용 반도체 칩 패키지 및 제조 방법 |
DE102004019428A1 (de) * | 2004-04-19 | 2005-08-04 | Infineon Technologies Ag | Halbleiterbauteil mit einem Hohlraumgehäuse und Verfahren zur Herstellung desselben |
DE102005015454B4 (de) * | 2005-04-04 | 2010-02-18 | Infineon Technologies Ag | Halbleitersensorbauteil mit Hohlraumgehäuse und Sensorchip sowie Verfahren zur Herstellung desselben |
-
2004
- 2004-09-07 DE DE200410043663 patent/DE102004043663B4/de not_active Expired - Fee Related
-
2005
- 2005-08-18 JP JP2007529314A patent/JP4712042B2/ja active Active
- 2005-08-18 WO PCT/DE2005/001453 patent/WO2006026951A1/de active Application Filing
- 2005-08-18 US US11/574,861 patent/US7749797B2/en not_active Expired - Fee Related
- 2005-08-18 CN CNB2005800379500A patent/CN100530699C/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6269537A (ja) * | 1985-09-24 | 1987-03-30 | Hitachi Ltd | 半導体装置 |
JPH0645383A (ja) * | 1992-07-27 | 1994-02-18 | Nec Corp | 樹脂封止方法及びその金型 |
JPH09138172A (ja) * | 1995-11-14 | 1997-05-27 | Fujikura Ltd | 半導体圧力センサおよびその製造方法 |
JPH11274196A (ja) * | 1998-03-26 | 1999-10-08 | Seiko Epson Corp | 半導体装置の製造方法およびモールドシステム並びに半導体装置 |
JP2002026170A (ja) * | 2000-07-06 | 2002-01-25 | Oki Electric Ind Co Ltd | 樹脂封止型半導体装置及びその製造方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20120004335A (ko) * | 2010-07-06 | 2012-01-12 | 로베르트 보쉬 게엠베하 | 진동 댐핑형 부품의 제조 방법 |
KR101877713B1 (ko) * | 2010-07-06 | 2018-08-09 | 로베르트 보쉬 게엠베하 | 진동 댐핑형 부품의 제조 방법 |
US9863828B2 (en) | 2014-06-18 | 2018-01-09 | Seiko Epson Corporation | Physical quantity sensor, electronic device, altimeter, electronic apparatus, and mobile object |
JP2019503277A (ja) * | 2016-01-13 | 2019-02-07 | 日本テキサス・インスツルメンツ株式会社 | 応力による影響を受け易いmemsをパッケージングするための構造及び方法 |
Also Published As
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WO2006026951A1 (de) | 2006-03-16 |
DE102004043663B4 (de) | 2006-06-08 |
US7749797B2 (en) | 2010-07-06 |
CN101053086A (zh) | 2007-10-10 |
CN100530699C (zh) | 2009-08-19 |
DE102004043663A1 (de) | 2006-04-06 |
US20090026558A1 (en) | 2009-01-29 |
JP4712042B2 (ja) | 2011-06-29 |
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