WO2006026951A1 - Halbleitersensorbauteil mit hohlraumgehäuse und sensorchip und verfahren zur herstellung desselben - Google Patents
Halbleitersensorbauteil mit hohlraumgehäuse und sensorchip und verfahren zur herstellung desselben Download PDFInfo
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- WO2006026951A1 WO2006026951A1 PCT/DE2005/001453 DE2005001453W WO2006026951A1 WO 2006026951 A1 WO2006026951 A1 WO 2006026951A1 DE 2005001453 W DE2005001453 W DE 2005001453W WO 2006026951 A1 WO2006026951 A1 WO 2006026951A1
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- Prior art keywords
- cavity
- sensor chip
- housing
- spacers
- sensor
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims abstract description 17
- 125000006850 spacer group Chemical group 0.000 claims description 57
- 239000004020 conductor Substances 0.000 claims description 14
- 238000001746 injection moulding Methods 0.000 claims description 10
- 239000011796 hollow space material Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 4
- 229920001971 elastomer Polymers 0.000 claims description 3
- 239000000806 elastomer Substances 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 229920002379 silicone rubber Polymers 0.000 claims description 3
- 239000004945 silicone rubber Substances 0.000 claims description 3
- 239000013013 elastic material Substances 0.000 abstract description 5
- 239000000463 material Substances 0.000 description 5
- 238000009434 installation Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- TVEXGJYMHHTVKP-UHFFFAOYSA-N 6-oxabicyclo[3.2.1]oct-3-en-7-one Chemical compound C1C2C(=O)OC1C=CC2 TVEXGJYMHHTVKP-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000004512 die casting Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
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- H01L2224/8312—Aligning
- H01L2224/83136—Aligning involving guiding structures, e.g. spacers or supporting members
- H01L2224/83138—Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
- H01L2224/8314—Guiding structures outside the body
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- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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Definitions
- the invention relates to a semiconductor sensor component with cavity housing and sensor chip and method for producing the same.
- a semiconductor sensor component with a cavity housing is known from the patent application DE 10 2004 019 428.9.
- Such semiconductor sensor components have the problem that the sensor chip is fixed in the cavity housing via a material with a low modulus of elasticity in such a way that repercussions of the mechanical loads of the rigid cavity housing, such as thermal stresses or vibration loads, act on the sensor chip and the measurement results partially distorted.
- repercussions of the mechanical loads of the rigid cavity housing such as thermal stresses or vibration loads
- the reliability of the sensor chip also depends on the variations in the quality of the adhesive with which the sensor chip is fastened to the bottom of the rigid cavity housing, so that partial resonant contact of the sensor chip, in particular when attaching bonding wires, occurs. As a result, production-related previous damage to the semiconductor chip or a reduced bond quality can not be ruled out, which impairs the reliability of the sensor chip. In addition, the different thermal expansion coefficients of the materials used cause te remplie due to mechanical stresses in Sensor ⁇ chip.
- the object of the invention is to specify a semiconductor component with a cavity housing and a sensor chip and a method for producing same, so that on the one hand the yield in the production of such semiconductor sensor components is improved and, on the other hand, the reliability of such semiconductor sensor components in daily measurement practice is increased.
- a semiconductor sensor component with a cavity housing is created, wherein the sensor chip is arranged in the cavity of the housing.
- This sensor chip has a sensor region which preferably reacts to pressure fluctuations and / or temperature fluctuations.
- the cavity housing has an opening to the surroundings in order to allow environmental parameters to act on the sensitive sensor area. Therefore, the sensor area faces this opening.
- the sensor chip itself is embedded in the cavity of the housing on all sides in a rubber-elastic mass.
- This semiconductor sensor component has the advantage that the sensor chip is mechanically decoupled from the cavity housing in the completely rubber-elastic mass surrounding it.
- the sensor chip depends only on bonding wires, which are only a few micrometers thick and which serve for the transfer of measurement signals to corresponding external contacts of the cavity housing. These bonding wires are in an upper area embedded in the gas-elastic mass. Apart from this Aufhot ⁇ tion in the rubber-elastic mass no mechanical supports or points of contact are provided in the cavity housing. Only for assembly and transport purposes, the semiconductor chip in the cavity housing can advantageously be supported by introducing spacer pins through the bottom region of the cavity housing in a preferred embodiment of the invention.
- the rubber-elastic mass has two areas: a lower area below the sensor chip, on which a semiconductor frame of the sensor chip is arranged with its rear side, and an upper area in which the edge sides and the upper side of the sensor chip are embedded with the sensor area itself are. These two areas are only distinguished during the production phase in order to simplify the production. These regions can no longer be distinguished in the cavity housing after finished semiconductor sensor component with cavity housing and sensor chip, especially if the same rubber-elastic material is used for the lower and upper regions.
- the rubber-elastic mass is an optically transparent elastomer.
- the optically transparent elastomers have the advantage that the photosensitivity of the semiconductor sensor chip can also be used for specific measurement purposes. However, if the sensor chip To be sensitive, it is also possible to use rubber-elastic masses with light-absorbing particles, such as soot particles.
- the rubber-elastic mass comprises a silicone rubber.
- silicone rubber have proven to be decoupling materials between the rigid cavity housing of the semiconductor sensor component and the sensor chip.
- the sensor chip is preferably in electrical connection via bonding wires, as already mentioned above, and via contacts through the cavity housing with external contacts of the semiconductor sensor component.
- the bonding wires have the advantage that they can be designed with only a few micrometers in diameter and thus support the mechanical decoupling of the rigid cavity housing and the rigid through contacts as well as the external contacts of the sensor chip.
- the cavity housing has a bottom, which in turn has passage openings.
- These passage openings are arranged such that the sensor chip can be mechanically supported on the one hand for transport and for assembly by means of corresponding pins which are guided through the opening in the bottom of the cavity housing.
- these openings have the advantage that the sensor chip during the bonding process, ie in the manufacture of the semiconductor device, mechanically supported by these openings and corresponding supports and / or Abstands ⁇ holder in bonding, so that a reliable bond between bond wire and Mais ⁇ surfaces is made possible at the top of the sensor chip.
- the cavity housing has at least one bottom and side walls, which laterally delimit the hollow space, wherein ends of spacers which protrude out of the bottom protrude and form an abutment for an arrangement and attachment of bonding wires on one form the sensor chip positioned at the ends of the spacers.
- This construction of the floor is achieved technically by the passage openings provided in the cavity floor. After removing the abutment for the
- Bonding of the sensor chip-released sensor chip in the rubber-elastic mass is mechanically decoupled from the rigid cavity housing so that its measured values are not impaired by the rigid cavity housing.
- the spacers are pins that project through the floor into the cavity. These pins are dimensioned so that they support exactly the area of the sensor chip that is subjected to the greatest stress due to the bonding.
- the lower part of the rubber-elastic mass is already applied to the bottom, so that the semiconductor chip is held laterally with the aid of the rubber-elastic mass and supported from below by the spacers.
- a method for producing a semiconductor sensor with a cavity housing and a sensor chip with sensor area arranged in the cavity of the housing has the following method steps. First, a cavity housing with inner interconnects and outer contacts and a cavity floor is produced, wherein the inner interconnects with the outer contacts via via contacts or via flat conductor railways are connected. In the manufacture of the cavity housing, both the cavity floor and the side walls surrounding the hollow space floor are produced from a rigid plastic material in an injection molding process.
- protruding ends of spacers are simultaneously poured into the cavity floor from the cavity floor, wherein the arrangement and size of the spacers are adapted to the planar extent of the semiconductor chip so that the ends of the spacers abutments for arranging and attaching form of bonding wires on ei ⁇ nem to be positioned on the ends of the spacer semiconductor chip.
- the bottom of the cavity is then filled with a rubber-elastic mass as a lower area so far that at least the spacers are sheathed to their ends by the rubber-elastic mass.
- the sensor chip is applied with its rear side to the ends of the spacers while fixing the sensor chip with the aid of the rubber-elastic mass.
- bonding wires are bonded onto corresponding contact surfaces on the upper side of the sensor chip opposite the ends of the spacers and are attached to corresponding contact terminal surfaces of inner flat conductors of the hollow housing.
- bonding wires and the sensor chip are embedded in the rubber-elastic mass by applying an upper region of the rubber-elastic compound, which encloses both the edge sides of the sensor chip and the sensor region of the sensor chip.
- the spacers may then be removed from the bottom to form through openings in the bottom of the cavity housing.
- This method has the advantage that the spacers can mechanically support the sensor chip as long as required for the production method, for example in the bonding step, or for the transport and assembly of the sensor chip at its place of use. Thereafter, as described above in the method, the spacers may be removed at any time to mechanically decouple the sensor chip completely from the rigid cavity housing to increase its sensor sensitivity and reliability.
- a leadframe with a plurality of housing positions is first produced for producing a cavity housing with internal conductor tracks and external contacts.
- the side walls and the bottom are then produced with cast-in spacers in the housing positions such that, for this purpose, the spacers are positioned in an injection mold prior to injection molding.
- This variant of the method has the advantage that no bores need to be made later through the housing base for positioning the spacers, but that in a single injection molding process both the outer contacts and the inner flat conductors as well as the spacers necessary for the spacer are all already in the housing Pre-positioned injection mold and thus give a cavity housing, which can be punched out after Fertig ⁇ position of the leadframe from this.
- the leadframe itself has the spacers, ie the spacers are firmly connected to the leadframe, so that the spacers can be removed from the finished semiconductor device after the injection molding process and after positioning the sensor chip and its connection to the inner leads with the lead frame.
- the spacers there is no possibility to leave the spacers as support for the sensor chip in the housing until this semiconductor sensor component is inserted at its place of use.
- transport spacers are introduced into the cavity housing bottom.
- the filling of the bottom in the cavity of the cavity housing is carried out for both the lower region and for the upper region with a rubber-elastic mass mit ⁇ means of a Dispense technique.
- This technique has the advantage that it very gently embeds the sensor chip with the bonding wires in a rubber-elastic mass.
- Ver ⁇ drive for the attachment of bonding wires on contact surfaces of the sensor chip a thermocompression or a
- Thermosonik bonding proven.
- the removal of the spacers can also be done by means of etching, if the possibility is excluded to remove the spacers without damaging the sensor chip from the bottom portion of the rigid cavity housing.
- the etching solution is adapted to the metal of the spacers, without the external contacts being etched or the rubber-elastic mass being damaged.
- pins are inserted into the housing to stabilize the sensor chip during the manufacture of the transport and assembly days.
- a chip adhesive can be used in In part, an extremely soft rubber-elastic material can be used.
- the sensor chip itself can not vibrate during wire bonding because the pins support it.
- the pins can be removed from the housing again, which can be made dependent was ⁇ the whether this should happen before the transport and assembly or not.
- the chip can be completely embedded in an extremely soft rubber-elastic material and thus mechanically decoupled completely from the rigid cavity housing.
- a single rubber-elastic material is used both for fixing the sensor chip on the spacers and for embedding the sensor chip.
- the pins temporarily remain in the component as a function of a defined spacer or can be removed from the bottom region of the hollow housing immediately after the wire bonding and the die casting; 6. a complete mechanical decoupling of preferably pressure sensor chips by the inventive concept for the chip attachment during the loads is achieved by wire bonding.
- FIG. 1 shows a schematic cross section through a semiconductor sensor component according to a first embodiment of the invention
- Figures 2 to 7 show schematic cross sections through a
- Figure 2 shows a schematic cross section through a cavity housing
- FIG. 3 shows a schematic cross section through the cavity housing according to FIG. 2 after introduction of a lower region of a rubber-elastic mass
- FIG. 4 shows a schematic cross section through the cavity housing according to FIG. 3 after application of a
- FIG. 5 shows a schematic cross section through the cavity housing according to FIG. 4 after electrical connection of the sensor chip with inner flat conductors;
- Figure 6 shows a schematic cross section through the
- FIG. 7 shows a schematic cross section through the cavity housing according to FIG. 6 after removal of spacers from the bottom area of the cavity housing.
- FIG. 1 shows a schematic cross section through a semiconductor sensor component 20 according to an embodiment of the invention.
- the semiconductor sensor component 20 has a cavity housing 1.
- the cavity 2 of the cavity housing 1 is open at the top.
- This opening 5 allows the semiconductor sensor device 20 to maintain a physical connection to the environment 6. Therefore, the sensor region 4 of a sensor chip 3, which is arranged in the cavity 2 of the hollow space housing 1, faces this opening 5.
- this sensor chip 3 is embedded on all sides in a rubber-elastic mass 7.
- the rigid cavity housing 1 is mechanically decoupled from the sensor chip 3 by embedding the sensor chip 3 in a rubber-elastic mass 7 surrounding it on all sides.
- the different coefficients of expansion of the different materials of the cavity housing 1, the electrical leads and the sensor chip 1 can not lead to thermal stresses, since these different expansions are compensated by the rubber-elastic mass 7 or not on the sensor chip be transmitted.
- vibration loads for the rigid cavity housing 1 can only conditionally or heavily attenuated on the sensor affect the chip. This results in a higher reliability of this semiconductor sensor component 20 compared to conventional semiconductor sensor components.
- the rubber-elastic mass 7 is uniformly marked in FIG. 1, but it consists of two regions.
- a lower region 8 is arranged mainly below the sensor chip 3 and covers the rear side 10 of the sensor chip.
- An upper region 9 of the rubber-elastic mass 7 is arranged principally on the upper side 13 of the sensor chip 3 and partially covers the edge sides 11 and 12 of the sensor chip and embeds bonding wires 14, on which the sensor chip hangs with its contact surfaces 24, into the rubber-elastic mass 7 one.
- a sensor region 4 is arranged centrally in the middle of the sensor chip 3, while the bonding wires 14 end on the edge regions of the sensor chip.
- the bonding wires 14 have a cross-section which carries only a few micrometers in its radius, so that the bonding wires themselves represent the only mechanical and electrical connection to the rigid cavity housing 1.
- the bonding wires 14 are bonded onto inner flat conductor tracks 23 so that measuring signals can be conducted from the sensor chip 3 via the bonding wires 14 to the inner flat conductor tracks 23 and from there via through contacts 15 to external contacts 16.
- the bottom 17 of the cavity housing 1 has passage openings 18 which also extend through the lower region 8 of the rubber-elastic mass 7. Spacers can be introduced into these passage openings 18 for transport and installation in order to ensure the position of the sensor chip during transport and installation. Only after installation in the field of application of the semiconductor sensor component 20 can then these spacers are removed with the release of the sensor chip from the bottom 17 of the cavity housing 1.
- the bottom 17 of of seen ⁇ the 19, through which the through contacts 15, the signals lead to the outside to the external contacts 16, surrounded.
- FIGS. 2 to 7 show schematic cross sections through a cavity housing 1 during different production phases of a semiconductor sensor component 20.
- Components having the same functions as in FIG. 1 are identified by the same reference numerals and are not discussed separately in the following FIGS. 2 to 7.
- FIG. 2 shows a schematic cross section through a cavity housing 1.
- the cavity housing 1 is constructed from a plastic housing composition 27 and has a bottom 17 and side walls 19 surrounding the bottom 17, in which flat conductors 25 are anchored. These flat conductors 25 are part of a leadframe having a plurality of cavity housing positions. In each of the cavity housing positions is with
- the cavity housing 1 present here has spacers 22 cast into the cavity floor 17, which here have the form of pins with pointed ends 21 of the spacers 22. These spacers 22 are arranged in the cavity floor so that their ends 21 protrude beyond the level of the cavity floor into the cavity 2 and are able to support a sensor chip 3 during bonding, during transport and / or during installation and to keep a distance.
- On the side walls 19 are located in the bottom area inner conductor tracks 23, which merge in the cavity in be ⁇ coated bonding surfaces 26. These bonding surfaces 26 are electrically connected via through contacts 15 with the external contacts 16.
- FIG. 3 shows a schematic cross section through the hollow space housing 1 according to FIG. 2 after introduction of a lower region of the rubber-elastic mass 7.
- the rubber-elastic mass 7 is held in a viscous, viscous state so that a sensor chip penetrates into the lower region 8 of the rubber-elastic mass 7 can be molded until it touches the ends 21 of the spacer 22.
- FIG. 4 shows a schematic cross section through the hollow space housing 1 according to FIG. 3 after applying a sensor chip 3 to the lower area 8 of the rubber-elastic mass 7.
- the rear side 10 of the sensor chip 3 lies in an adhesive fit on the ends 21 of the spacers 22 are arranged in the bottom 17 of the cavity housing 1, on.
- the sensor chip 3 is also fixed in the horizontal spatial directions, so that reliable bonding of bonding wires to the contact surfaces 24 of the sensor chip 3 is possible.
- FIG. 5 shows a schematic cross section through the hollow space housing 1 according to FIG. 4 after electrical connection of the sensor chip to inner flat conductors 25
- Bonding wires 14 are bonded with a bonding stylus on the contact surfaces 24 of the sensor chip 3 and then the bonding wires 14 are mounted on the bonding surfaces 26 of the flat conductors 25 in the cavity housing 1.
- bonding which is a load on the sensor chip 3
- the sensor chip 3 is supported by the spacers 22, which protrude from the bottom 17 of the cavity housing 1, in such a way that reliable bonding is achieved. bonds between the contact surfaces 24 of the sensor chip 3 and the bonding wires 14 arise.
- FIG. 6 shows a schematic cross section through the hollow space housing 1 according to FIG. 5 after application of the upper region 9 of a rubber-elastic mass 7.
- the sensor chip 3 is now completely surrounded by a rubber-elastic mass, only the spacers 22 provide a mechanical coupling to the rigid cavity housing 1. This coupling can be retained until the transport and assembly of the semiconductor sensor component 20 is completed. Thereafter, the spacers 22 may be removed from the floor 17.
- FIG. 7 shows a schematic cross section through the hollow space housing 1 according to FIG. 6 after removal of the spacers 22 from the bottom 17 of the cavity housing 1.
- the schematic cross section through this semiconductor component 20 of FIG. 7 now corresponds to the schematic cross section shown in FIG ⁇ gur 1 already shown.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/574,861 US7749797B2 (en) | 2004-09-07 | 2005-08-18 | Semiconductor device having a sensor chip, and method for producing the same |
JP2007529314A JP4712042B2 (ja) | 2004-09-07 | 2005-08-18 | 空洞ハウジングおよびセンサチップを含む半導体センサ装置、および、その製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004043663.0 | 2004-09-07 | ||
DE200410043663 DE102004043663B4 (de) | 2004-09-07 | 2004-09-07 | Halbleitersensorbauteil mit Hohlraumgehäuse und Sensorchip und Verfahren zur Herstellung eines Halbleitersensorbauteils mit Hohlraumgehäuse und Sensorchip |
Publications (1)
Publication Number | Publication Date |
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WO2006026951A1 true WO2006026951A1 (de) | 2006-03-16 |
Family
ID=35457385
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Application Number | Title | Priority Date | Filing Date |
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PCT/DE2005/001453 WO2006026951A1 (de) | 2004-09-07 | 2005-08-18 | Halbleitersensorbauteil mit hohlraumgehäuse und sensorchip und verfahren zur herstellung desselben |
Country Status (5)
Country | Link |
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US (1) | US7749797B2 (de) |
JP (1) | JP4712042B2 (de) |
CN (1) | CN100530699C (de) |
DE (1) | DE102004043663B4 (de) |
WO (1) | WO2006026951A1 (de) |
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Publication number | Priority date | Publication date | Assignee | Title |
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US7464603B2 (en) | 2005-04-04 | 2008-12-16 | Infineon Technologies Ag | Sensor component with a cavity housing and a sensor chip and method for producing the same |
US7919857B2 (en) | 2005-04-04 | 2011-04-05 | Infineon Technologies Ag | Plastic housing and semiconductor component with said plastic housing |
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US9863828B2 (en) | 2014-06-18 | 2018-01-09 | Seiko Epson Corporation | Physical quantity sensor, electronic device, altimeter, electronic apparatus, and mobile object |
Also Published As
Publication number | Publication date |
---|---|
US20090026558A1 (en) | 2009-01-29 |
DE102004043663B4 (de) | 2006-06-08 |
JP4712042B2 (ja) | 2011-06-29 |
DE102004043663A1 (de) | 2006-04-06 |
CN100530699C (zh) | 2009-08-19 |
JP2008512647A (ja) | 2008-04-24 |
US7749797B2 (en) | 2010-07-06 |
CN101053086A (zh) | 2007-10-10 |
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