CN100530699C - 具有腔罩和传感器芯片的半导体传感器器件及其制造方法 - Google Patents

具有腔罩和传感器芯片的半导体传感器器件及其制造方法 Download PDF

Info

Publication number
CN100530699C
CN100530699C CNB2005800379500A CN200580037950A CN100530699C CN 100530699 C CN100530699 C CN 100530699C CN B2005800379500 A CNB2005800379500 A CN B2005800379500A CN 200580037950 A CN200580037950 A CN 200580037950A CN 100530699 C CN100530699 C CN 100530699C
Authority
CN
China
Prior art keywords
chamber
sensor chip
dividing plate
chamber cover
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2005800379500A
Other languages
English (en)
Other versions
CN101053086A (zh
Inventor
M·鲍尔
A·克斯勒
W·肖伯
A·海默里
J·马哈勒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of CN101053086A publication Critical patent/CN101053086A/zh
Application granted granted Critical
Publication of CN100530699C publication Critical patent/CN100530699C/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0203Containers; Encapsulations, e.g. encapsulation of photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8312Aligning
    • H01L2224/83136Aligning involving guiding structures, e.g. spacers or supporting members
    • H01L2224/83138Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
    • H01L2224/8314Guiding structures outside the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83192Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85203Thermocompression bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
    • H01L2224/85207Thermosonic bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85385Shape, e.g. interlocking features
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/922Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222Sequential connecting processes
    • H01L2224/92242Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/16Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49861Lead-frames fixed on or encapsulated in insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01068Erbium [Er]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

本发明涉及具有腔罩(1)和传感器芯片(3)的半导体传感器器件(20)及其制造方法。腔罩(1)包括指向外界(6)的开口(5)。传感器芯片(3)的传感器区(4)被设置为朝向所述开口(5)。腔罩(1)的腔(2)中的传感器芯片(3)各面都埋植在弹性橡胶材料(7)中。

Description

具有腔罩和传感器芯片的半导体传感器器件及其制造方法
技术领域
包括腔罩和传感器芯片的半导体传感器器件及其制造方法。
本发明涉及包括腔罩和传感器芯片的半导体传感器器件及其制造方法。
背景技术
由专利申请DE 10 2004 019 428.9已知一种包括腔罩的半导体传感器器件。这种半导体传感器器件存在下面的问题,即由于利用低弹性模量的材料通过粘接将传感器芯片固定在腔罩中,以致使刚性腔罩的机械载荷例如热应变或振动载荷的扰动反应影响传感器芯片并部分地破坏了测量结果。通过使用软材料来保护腔罩中的这种传感器芯片不受环境影响,以使至少使具有半导体传感器芯片传感器区的上侧不受附加载荷的影响。
传感器芯片的稳定性还取决于用来将传感器芯片固定在刚性腔罩底部的粘接剂质量波动,其结果是,特别在安装接合线时局部地发生传感器芯片的谐振振动。因此,不能排除半导体芯片制造所决定的先前破坏或者粘接质量降低的结果,这一点损坏了传感器芯片的稳定性。而且,由于传感器芯片的机械应力,所用材料之不同的热膨胀系数还造成了成品率的损失。
发明内容
本发明的技术问题在于一种包括腔罩和传感器芯片的半导体器件及其制造方法,从而一方面提高这种半导体传感器器件的生产中的成品率,另一方面增加这种半导体传感器器件在日常测量实践应用中的可靠性。
借助独立权利要求的主题解决了该技术问题。从属权利要求给出了本发明有利的改进方案。
本发明提供一种包括腔罩的半导体传感器器件,其中将传感器芯片设置在罩的腔中。所述传感器芯片具有传感器区,该区优选对压力波动和/或温度波动起反应。为此目的,腔罩对周围环境有开口以允许环境参数对敏感的传感器区起作用。因此传感器区要朝向所述开口。传感器芯片本身其所有侧面都埋植在罩腔内的弹性橡胶混合物中。腔罩具有底部,在底部上具有通孔。
由JP 60-136254、图4公知在弹性橡胶混合物中埋植芯片;由DE 42 38 113 A1公知所有侧面的埋植。
在这种情况下,弹性橡胶混合物包含两个区域:传感器芯片下方的下部区域和上部区域,通过传感器芯片的背面在所述的下部区域上布置传感器芯片的半导体框,利用所述的传感器区域把传感器芯片的侧面和上面埋植在上部区域中。参见DE 42 38 113 A1。这两个区域仅仅在制造阶段才进行区分,以简化生产工艺。如果下部区域和上部区域使用了相同的弹性橡胶混合物,那么在完成了具有腔罩和腔罩中的传感器芯片的半导体传感器器件之后就不再区分这些区域。
只有当传感器芯片的下部区域和上部区域的弹性橡胶混合物具有不同的弹性常数或者具有不同的着色时,(这点不应在实际实施例中排除)才能察觉下部区域和上部区域之间的界面。最好,弹性混合物是光学透明的弹性体。所述光学透明的弹性体具有下面优点,即还可将半导体传感器芯片的光敏感性用于特定的测量目的。然而如果传感器芯片是光不敏感的,则可能采用包括光吸收颗粒例如碳黑颗粒的弹性橡胶混合物。
根据本发明,腔罩有底座,而底座上有通孔。所述通孔以这样一种方式设置,使得一方面可以机械支承传感器芯片以进行运送,另一方面借助通过腔罩底座上开口的相应销进行安装。而且,所述开口具有下面的优点,即在接合操作期间也就是在半导体器件的生成期间,可以借助所述开口以及借助接合中相应的支承和/或隔板在机械上支承传感器芯片,从而形成传感器芯片顶面的接合线和接触区之间的可靠接合连接。
在本发明的另一个优选实施例中,腔罩至少有一个底部和在横向上限定腔的侧壁,其中隔板的可拆卸端部从底部伸出,其形成了对处在隔板端部的传感器芯片上接合线进行设置和安装的支点。通过腔底部中的通孔可在工艺上实现这种底部结构。在去除传感器芯片的接合点之后被释放开的弹性橡胶混合物中的传感器芯片与刚性腔罩在机械上分离,从而刚性腔罩不会损坏其测量值。
在本发明另一个实施例中,隔板为通过底部伸进腔中的销。所述销的尺寸应使其可以准确支承受到接合所施加的最大载荷的传感器芯片区域。为将所述半导体芯片固定在所述隔板上,已经将弹性橡胶混合物的下部区加在底部上,从而借助弹性橡胶混合物在横向上保持该半导体芯片并由隔板从下面支承该半导体芯片。
产生包括腔罩和含传感区之传感器芯片的半导体传感器的方法包括下面步骤,而所述传感器芯片设置在所述腔罩的腔中。第一步包括产生具有内部导电轨迹、外部支点和腔底部的腔罩,其中经直通支点或者经引导轨道将内部导电轨迹连至外部支点。在生成腔罩期间,腔底部和围绕腔底部的侧壁都由硬质塑料材料以压铸法生成。
在压铸操作期间,将从腔底部凸出的隔板端部同时抛入腔底部中,其中隔板的设置和大小要适合于半导体芯片的面积范围,使得隔板的端部形成将接合线设置和安装在即将置于隔板端部的半导体芯片上的支点。在所述腔罩中,首先将腔的底部填充弹性橡胶混合物作为下部区,使得至少由弹性橡胶混合物将该隔板密封至其端部。
然后将传感器芯片的背面压到隔板端部,借助弹性橡胶混合物固定传感器芯片。然后,将接合线接合至传感器芯片与隔板端部相对的顶面上的相应接触区,并将其安装在腔罩内部连线的相应触点上。然后应用弹性橡胶混合物的上部区将接合线和传感器芯片埋植于弹性橡胶混合物中,弹性橡胶混合物密封传感器芯片的侧面以及传感器芯片的传感器区。然后从底部取下隔板,形成在腔罩底部的通孔。
该方法具有下面的优点,即隔板可以在机械上将传感器芯片支承得如生成方法所需要的一样长时间,例如在接合步骤,或者将传感器芯片运送和固定在其使用场所所需的时间。然后可以在任何时候取下如上面方法所述的隔板,以使传感器芯片与刚性腔罩彻底地在机械上分离,从而增加其传感器的灵敏度和可靠性。
在生成半导体传感器器件方法的另一种优选实施中,为产生具有内部导电轨迹和外部触点的腔罩,首先产生具有多个罩位置的引线框。通过压铸技术以下面的方法产生具有罩位置上镶铸隔板的侧壁和底部,使得在压铸之前将隔板设置在压铸模中。该方法变体具有这样的优点,即随后不必通过罩底部制造孔洞来定位隔板,而是在单次喷射塑模过程中,将装配隔板所需要的外部触点和内部引线以及隔板都已经预先设置在压铸模中,从而在完成后者之后生成可以从引线框冲压出来的腔罩。
在本发明另一个实施例中,引线框本身具有隔板,即将隔板固定地连接至引线框,从而可在压铸工序后和在将传感器芯片及其连接线定位到内部引线上后,借助引线框将隔板从所完成的半导体器件上取下。将隔板留下作为罩中传感器芯片支撑直到该半导体传感器芯片用在所使用的场所可能不适用于这种情况。但是,存在从引线框拆卸隔板后将传送隔板引入腔罩的可能。
最好通过分配工艺(dispensing technology)用弹性橡胶混合物在腔罩的腔内底座上进行灌注来形成下区和上区。该技术具有下面的优点,即其将具有接合线的传感器芯片以极其柔缓的方式埋植在弹性橡胶混合物中。已经证明作为将接合线安装在传感器芯片接触区的方法,热压或热声接合是值得采用的。如果没有从刚性腔罩底部区域拆卸隔板而不破坏传感器芯片的可能性,则通过蚀刻工艺也可以实现隔板的拆卸。在所述蚀刻工艺的情况下,蚀刻溶液与隔板金属配位,而不会蚀刻外部触点或者在该过程中破坏弹性橡胶混合物。
总之,可以确定,借助本发明将销插入罩体为的是在制造、运送和安装期间使传感器芯片处于稳定状态。因此,将非常柔软的弹性橡胶材料用作芯片粘接剂是有利的。但是,由于所述销支承着传感器芯片,故在引线接合期间传感器芯片本身不会振动。最后,还可从罩体上拆下所述销,这取决于在运送和安装前是否会实际发生这种情况。
借助本发明所要实现的在于:
1.可将芯片完全埋植在非常柔软的弹性橡胶材料中,并因此也可将其与刚性腔罩在机械上彻底地分离。
2.将单种弹性橡胶材料用于将传感器芯片固定在隔板上和用于埋植所述传感器芯片。
3.在使用半导体传感器器件期间,没有直接的机械力作用于传感器芯片,尤其是传感区中的传感膜片上。
4.另一方面借助销或者借助隔板实现引线接合所需要的机械稳定性。
5.作为限定隔板的销可暂时留在所述器件中或者在引线接合和芯片密封之后,再直接从腔罩底部区取出。
6.在引线接合所引起的加载期间通过根据本发明固定芯片的原理实现优选压力传感器芯片的完全机械分离。
附图说明
现在参照附图更加详细的描述本发明。
图1示出了根据本发明第一实施例的通过半导体传感器器件的示意横截面;
图2到7示出了在半导体传感器器件不同的生成阶段中通过腔罩的示意横截面;
图2示出了通过腔罩的示意横截面;
图3示出了图2腔罩在引入弹性橡胶混合物下部区域之后通过腔罩的示意横截面;
图4示出了图3腔罩在传感器芯片加到弹性橡胶混合物下部区域之后通过腔罩的示意横截面;
图5示出了图4腔罩在传感器芯片电连接至内部引线之后通过腔罩的示意横截面;
图6示出了图5腔罩在加了弹性橡胶混合物上部区域之后通过腔罩的示意横截面;
图7示出了图6腔罩在从腔罩底部区域拆卸隔板之后通过腔罩的示意横截面。
具体实施方式
图1示出了根据本发明一个实施例的通过半导体传感器器件20的示意横截面。半导体传感器器件20具有腔罩1。如图1所示腔罩1的腔2朝上部开启。该开口5使得半导体传感器器件20与周围环境6保持直接接触。因此,设置在腔罩1的腔2中的传感器芯片3的传感器区4朝向所述开口5。将所述传感器芯片3的所有各面埋植在腔罩1的腔2内的弹性橡胶混合物7中。
由于所述半导体传感器器件20的结构,通过将传感器芯片3埋植在处处包围它的弹性橡胶混合物7中而使刚性腔罩1与传感器芯片3在机械上分离。因此,因为热载荷期间弹性橡胶混合物7补偿了如下的不同膨胀或者这些不同膨胀没有传送至传感器芯片,所以腔罩1、引线、和传感器芯片1之不同材料的不同膨胀系数不会引起热应变。刚性腔罩1的振动载荷也仅仅能够有限地或者非常弱地影响传感器芯片。这使得所述半导体传感器器件20和常规半导体传感器器件相比可靠性更高。
弹性橡胶混合物7在图1中作了同样的标识,但是其包括两个区域。下部区域8主要设置在传感器芯片3下方覆盖传感器芯片的背面10。弹性橡胶混合物7的上部区域9主要设置在传感器芯片3的顶面13上,并且部分覆盖传感器芯片的侧面11和12,并将接合线14埋植在弹性橡胶混合物7中,而传感器芯片的接触区24将传感器芯片悬吊在接合线14上。
传感器区4设置在传感器芯片3的中央,而接合线14终止于传感器芯片的边缘区域。接合线14的横截面其半径仅为几微米,因而接合线本身构成了至刚性腔罩1的唯一的机械和电连接。为此目的,接合线14结合至内引线轨道23上,从而测量信号可从传感器芯片3经接合线14传送至内部连线轨道23,并从那里经过直通触点15连接至外部触点16。
腔罩1的底座17具有通孔18,通孔18还延伸通过弹性橡胶混合物7的下部区域8。将隔板引入所述通孔18以运送和安装,以保证在运送和安装期间传感器芯片的位置。只有在半导体传感器器件20的使用区域进行安装之后,然后才从腔罩1的底部17拆卸所述隔板,同时释放传感器芯片。在本发明的该实施例中,侧壁19包围底部17,直通触点15通过侧壁将信号向外传送至外部触点16。
图2到7示出了在半导体传感器器件20不同的产生阶段中通过腔罩1的示意横截面。功能和图1中相同的部件以相同的参考符号标示,在随后的附图2到7中不再分别讨论。
图2示出了通过腔罩1的示意横截面。腔罩1由塑料罩混合物27制造,其具有底部17和围绕底部17的侧壁19,引线25固定在侧壁19。所述引线25是具有多个腔罩位置的引线框的一部分。借助喷射塑模方法将这种腔罩1模制在每个腔罩位置上。这里所提供的腔罩1具有铸在腔底座17中的隔板22,隔板在这里呈销形,其具有隔板22的锥形尖端21。所述隔板22设置在腔底座中使其端部21伸进高于腔底部平面的腔2中,并且能够在接合、运送和/或安装期间支承并隔开传感器芯片3。在侧壁19上,内部导电轨迹23位于底部区域,并且融入腔中的涂敷接合区26内。所述接合区26经直通触点15电连接至外部触点16。
图3示出了图2腔罩1在引入弹性橡胶混合物7下部区域之后通过腔罩1的示意横截面。在这一情况下,弹性橡胶混合物7保持为高度粘稠状态,从而传感器芯片可铸塑进弹性橡胶混合物7的下部区域8中直到其接触隔板22的端部21。
图4示出了图3腔罩1在传感器芯片3加到弹性橡胶混合物7下部区域8之后通过腔罩1的示意横截面。在此情况下,传感器芯片3的背面10胶着地压在设置在腔罩1底部17中的隔板22的端部21。借助朝向侧面11和12排移的弹性橡胶混合物7,还可将传感器芯片3固定在水平空间方向上,从而能够将接合线牢固地接合在传感器芯片3的接触区24上。
图5示出了图4腔罩1在传感器芯片电连接至内部引线25之后通过腔罩1的示意横截面。为此目的,借助于接合针将接合线14接合在传感器芯片3的接触区24上,并且随后将接合线14安装在腔罩1中引线25的接合区26上。在构成传感器芯片3载荷的接合期间,从腔罩1底部17凸出的隔板22以下述方法支承传感器芯片3,使得在传感器芯片3的接触区24和引线14之间形成可靠的接合连接。
图6示出了图5腔罩1在加了弹性橡胶混合物7上部区域9之后通过腔罩1的示意横截面。在此情况下,将接合线14、半导体芯片3的侧面11和12、以及半导体芯片3的顶面13埋植在弹性橡胶混合物7中。因此,传感器芯片3现在被弹性橡胶混合物完全包围,并且只有隔板22提供了与刚性腔罩1的机械耦合。可保持所述耦合直到半导体传感器器件20的运送和安装结束。然后从底部17取下隔板22。
图7示出了图6腔罩1在从腔罩1底部17取下隔板22之后通过腔罩1的示意横截面。通过图7所述半导体器件20的示意横截面现在与已经在图1示出的示意横截面相一致。

Claims (10)

1.半导体传感器器件,其包括腔罩(1)和具有传感器区(4)的传感器芯片(3),所述传感器芯片(3)被设置在所述腔罩(1)的腔(2)中,其中腔罩(1)具有指向外界(6)的开口(5),所述传感器区(4)朝向所述开口(5),而且腔罩(1)的腔(2)中的传感器芯片(3)的所有各面都被埋植在弹性橡胶混合物(7)中,所述腔罩(1)具有底部(17),在该底部上具有通孔(18)。
2.根据权利要求1的半导体传感器器件,
其特征在于,
所述腔罩(1)具有限定所述腔(2)的至少一个底部(17)和侧壁(19)并且所述腔罩(1)具有隔板(22),其中隔板(22)的可拆卸端部(21)从底部(17)伸出,其形成了对在隔板(22)端部(21)的传感器芯片(3)上的接合线(14)进行设置和安装的一个支点。
3.根据权利要求2的半导体传感器器件,
其特征在于,
所述隔板(22)是经过底部(17)伸进所述腔(2)的销。
4.根据权利要求3的半导体传感器器件,
其特征在于,
从底部(17)凸出的隔板(22)的端部(21)被弹性橡胶混合物(7)密封。
5.制造半导体传感器器件(20)的方法,半导体传感器器件(20)包括腔罩(1)和具有传感器区(4)的传感器芯片(3),所述传感器芯片(3)被设置在所述腔罩(1)的腔(2)中,其中所述方法包括以下步骤:
-产生具有内部导电轨迹(23)、外部触点(16)和腔底部(17)的腔罩(1),以及围绕所述腔底部(17)的侧壁(19),和从所述腔底部(17)凸出的隔板(22)的端部(21),其中隔板(22)的设置和大小适合于半导体芯片(3)下侧面(10)的面积范围,从而隔板(22)的端部(21)形成了对在隔板(22)端部(21)上的传感器芯片(3)上的接合线(14)进行设置和安装的一个支点;
-以弹性橡胶混合物(7)将腔罩(1)的腔(2)底部(17)至少填充至隔板(22)的端部(21);
-利用传感器芯片(3)的下侧面(10)将传感器芯片(3)施加到隔板(22)的端部(21),而将传感器芯片(3)固定在弹性橡胶混合物(7)上;
-将接合线(14)安装在传感器芯片(3)的接触区(24)上;
-将接合线(14)和传感器芯片(3)埋植于弹性橡胶混合物(7)中;
-从底部(17)拆卸隔板(22),而在腔罩(1)的底部(17)中形成通孔(18)。
6.根据权利要求5的方法,
其特征在于,
为产生具有内部导电轨迹(23)和外部触点(16)的腔罩(1),首先产生具有多个罩位置的引线框,其中通过压铸技术产生侧壁(19)和在罩位置上含被镶铸的隔板(22)的底部(17),并为此目的在压铸之前将隔板(22)设置在压铸模中。
7.根据权利要求5或6的方法,
其特征在于,
所述引线框具有隔板(22),在用引线框进行压铸工序之后将隔板从所完成的半导体传感器器件(20)中取出。
8.根据权利要求5或6的方法,
其特征在于,
利用分配工艺实现以弹性橡胶混合物(7)对腔罩(1)的腔底部(17)的填充。
9.根据权利要求5或6的方法,
其特征在于,
利用热压接合或热声接合来实现接合线(14)在传感器芯片(3)接触区(24)上的安装。
10.根据权利要求5或6的方法,
其特征在于,
通过蚀刻工艺实现隔板(22)的拆卸。
CNB2005800379500A 2004-09-07 2005-08-18 具有腔罩和传感器芯片的半导体传感器器件及其制造方法 Expired - Fee Related CN100530699C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004043663.0 2004-09-07
DE200410043663 DE102004043663B4 (de) 2004-09-07 2004-09-07 Halbleitersensorbauteil mit Hohlraumgehäuse und Sensorchip und Verfahren zur Herstellung eines Halbleitersensorbauteils mit Hohlraumgehäuse und Sensorchip

Publications (2)

Publication Number Publication Date
CN101053086A CN101053086A (zh) 2007-10-10
CN100530699C true CN100530699C (zh) 2009-08-19

Family

ID=35457385

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2005800379500A Expired - Fee Related CN100530699C (zh) 2004-09-07 2005-08-18 具有腔罩和传感器芯片的半导体传感器器件及其制造方法

Country Status (5)

Country Link
US (1) US7749797B2 (zh)
JP (1) JP4712042B2 (zh)
CN (1) CN100530699C (zh)
DE (1) DE102004043663B4 (zh)
WO (1) WO2006026951A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106233095A (zh) * 2013-12-12 2016-12-14 Sc2N公司 包括受树脂保护的传感器的装置

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7345671B2 (en) * 2001-10-22 2008-03-18 Apple Inc. Method and apparatus for use of rotational user inputs
US20070085841A1 (en) * 2001-10-22 2007-04-19 Apple Computer, Inc. Method and apparatus for accelerated scrolling
US7312785B2 (en) 2001-10-22 2007-12-25 Apple Inc. Method and apparatus for accelerated scrolling
US7333092B2 (en) 2002-02-25 2008-02-19 Apple Computer, Inc. Touch pad for handheld device
US7499040B2 (en) 2003-08-18 2009-03-03 Apple Inc. Movable touch pad with added functionality
US20060181517A1 (en) * 2005-02-11 2006-08-17 Apple Computer, Inc. Display actuator
US20070152977A1 (en) * 2005-12-30 2007-07-05 Apple Computer, Inc. Illuminated touchpad
US7495659B2 (en) 2003-11-25 2009-02-24 Apple Inc. Touch pad for handheld device
US8059099B2 (en) 2006-06-02 2011-11-15 Apple Inc. Techniques for interactive input to portable electronic devices
JP2008511045A (ja) 2004-08-16 2008-04-10 フィンガーワークス・インコーポレーテッド タッチセンス装置の空間分解能を向上させる方法
DE102005015454B4 (de) 2005-04-04 2010-02-18 Infineon Technologies Ag Halbleitersensorbauteil mit Hohlraumgehäuse und Sensorchip sowie Verfahren zur Herstellung desselben
DE102005015455B4 (de) 2005-04-04 2021-03-18 Infineon Technologies Ag Kunststoffgehäuse und Halbleiterbauteil mit derartigem Kunststoffgehäuse sowie ein Verfahren zur Herstellung eines Kunststoffgehäuses
US7880729B2 (en) 2005-10-11 2011-02-01 Apple Inc. Center button isolation ring
US20070152983A1 (en) * 2005-12-30 2007-07-05 Apple Computer, Inc. Touch pad with symbols based on mode
DE102006011753B4 (de) 2006-03-13 2021-01-28 Infineon Technologies Ag Halbleitersensorbauteil, Verfahren zur Herstellung eines Nutzens und Verfahren zur Herstellung von Halbleitersensorbauteilen
US8743060B2 (en) 2006-07-06 2014-06-03 Apple Inc. Mutual capacitance touch sensing device
US9360967B2 (en) 2006-07-06 2016-06-07 Apple Inc. Mutual capacitance touch sensing device
US8022935B2 (en) 2006-07-06 2011-09-20 Apple Inc. Capacitance sensing electrode with integrated I/O mechanism
US7795553B2 (en) 2006-09-11 2010-09-14 Apple Inc. Hybrid button
US20080088597A1 (en) * 2006-10-11 2008-04-17 Apple Inc. Sensor configurations in a user input device
US8274479B2 (en) 2006-10-11 2012-09-25 Apple Inc. Gimballed scroll wheel
US20080088600A1 (en) * 2006-10-11 2008-04-17 Apple Inc. Method and apparatus for implementing multiple push buttons in a user input device
US8482530B2 (en) 2006-11-13 2013-07-09 Apple Inc. Method of capacitively sensing finger position
US8683378B2 (en) 2007-09-04 2014-03-25 Apple Inc. Scrolling techniques for user interfaces
US7910843B2 (en) 2007-09-04 2011-03-22 Apple Inc. Compact input device
US20090058801A1 (en) * 2007-09-04 2009-03-05 Apple Inc. Fluid motion user interface control
US20090073130A1 (en) * 2007-09-17 2009-03-19 Apple Inc. Device having cover with integrally formed sensor
DE102007057441B4 (de) 2007-11-29 2019-07-11 Robert Bosch Gmbh Verfahren zur Herstellung eines mikromechanischen Bauelements mit einem volumenelastischen Medium und mikromechanischen Bauelement
US8416198B2 (en) 2007-12-03 2013-04-09 Apple Inc. Multi-dimensional scroll wheel
US8125461B2 (en) 2008-01-11 2012-02-28 Apple Inc. Dynamic input graphic display
US8820133B2 (en) 2008-02-01 2014-09-02 Apple Inc. Co-extruded materials and methods
DE102008029192A1 (de) * 2008-03-13 2009-09-24 Epcos Ag Fühler zum Erfassen einer physikalischen Größe und Verfahren zur Herstellung des Fühlers
US9454256B2 (en) 2008-03-14 2016-09-27 Apple Inc. Sensor configurations of an input device that are switchable based on mode
TW200952142A (en) * 2008-06-13 2009-12-16 Phoenix Prec Technology Corp Package substrate having embedded semiconductor chip and fabrication method thereof
US20100058251A1 (en) * 2008-08-27 2010-03-04 Apple Inc. Omnidirectional gesture detection
US20100060568A1 (en) * 2008-09-05 2010-03-11 Apple Inc. Curved surface input device with normalized capacitive sensing
US8816967B2 (en) 2008-09-25 2014-08-26 Apple Inc. Capacitive sensor having electrodes arranged on the substrate and the flex circuit
DE102008043517B4 (de) * 2008-11-06 2022-03-03 Robert Bosch Gmbh Sensormodul und Verfahren zur Herstellung eines Sensormoduls
CH699977A8 (de) * 2008-11-25 2010-08-31 Baumer Innotec Ag Vorrichtung und Verfahren zum Anordnen eines Gehäuses in einer vorgegebenen Lage relativ zu einem Referenzobjekt
US8395590B2 (en) 2008-12-17 2013-03-12 Apple Inc. Integrated contact switch and touch sensor elements
DE102009002584A1 (de) * 2009-04-23 2010-10-28 Robert Bosch Gmbh Sensoranordnung
US9354751B2 (en) 2009-05-15 2016-05-31 Apple Inc. Input device with optimized capacitive sensing
US8872771B2 (en) 2009-07-07 2014-10-28 Apple Inc. Touch sensing device having conductive nodes
US8551814B2 (en) * 2010-03-11 2013-10-08 Freescale Semiconductor, Inc. Method of fabricating a semiconductor device that limits damage to elements of the semiconductor device that are exposed during processing
US8191423B2 (en) * 2010-03-29 2012-06-05 Continental Automotive Systems, Inc. Grooved structure for die-mount and media sealing
JP5595145B2 (ja) 2010-07-02 2014-09-24 株式会社デンソー 半導体力学量センサ
DE102010030960B4 (de) * 2010-07-06 2020-12-10 Robert Bosch Gmbh Verfahren zur Herstellung eines schwingungsgedämpften Bauteils
JP2012073233A (ja) * 2010-08-31 2012-04-12 Mitsumi Electric Co Ltd センサ装置及び半導体センサ素子の実装方法
US8454789B2 (en) * 2010-11-05 2013-06-04 Raytheon Company Disposable bond gap control structures
DE102011003195B4 (de) 2011-01-26 2019-01-10 Robert Bosch Gmbh Bauteil und Verfahren zum Herstellen eines Bauteils
US9324586B2 (en) * 2011-08-17 2016-04-26 Infineon Technologies Ag Chip-packaging module for a chip and a method for forming a chip-packaging module
DE102012215449A1 (de) * 2012-08-31 2014-03-27 Osram Opto Semiconductors Gmbh Gehäuse für ein elektronisches bauelement, elektronische baugruppe, verfahren zum herstellen eines gehäuses für ein elektronisches bauelement und verfahren zum herstellen einer elektronischen baugruppe
US9510495B2 (en) * 2012-11-27 2016-11-29 Freescale Semiconductor, Inc. Electronic devices with cavity-type, permeable material filled packages, and methods of their manufacture
US8937380B1 (en) 2013-08-30 2015-01-20 Infineon Technologies Austria Ag Die edge protection for pressure sensor packages
DE102013222307A1 (de) * 2013-11-04 2015-05-07 Robert Bosch Gmbh Mikroelektromechanische Sensoranordnung und Verfahren zum Herstellen einer mikroelektromechanischen Sensoranordnung
DE102014105861B4 (de) * 2014-04-25 2015-11-05 Infineon Technologies Ag Sensorvorrichtung und Verfahren zum Herstellen einer Sensorvorrichtung
CN105280621B (zh) 2014-06-12 2019-03-19 意法半导体(格勒诺布尔2)公司 集成电路芯片的堆叠和电子器件
US9863828B2 (en) 2014-06-18 2018-01-09 Seiko Epson Corporation Physical quantity sensor, electronic device, altimeter, electronic apparatus, and mobile object
US9598280B2 (en) * 2014-11-10 2017-03-21 Nxp Usa, Inc. Environmental sensor structure
US10060820B2 (en) * 2015-12-22 2018-08-28 Continental Automotive Systems, Inc. Stress-isolated absolute pressure sensor
US9896330B2 (en) * 2016-01-13 2018-02-20 Texas Instruments Incorporated Structure and method for packaging stress-sensitive micro-electro-mechanical system stacked onto electronic circuit chip
US11211305B2 (en) 2016-04-01 2021-12-28 Texas Instruments Incorporated Apparatus and method to support thermal management of semiconductor-based components
CN107290096A (zh) * 2016-04-11 2017-10-24 飞思卡尔半导体公司 具有膜片的压力感测集成电路器件
US10861796B2 (en) 2016-05-10 2020-12-08 Texas Instruments Incorporated Floating die package
US10132705B2 (en) * 2016-07-19 2018-11-20 Kulite Semiconductor Products, Inc. Low-stress floating-chip pressure sensors
US10179730B2 (en) * 2016-12-08 2019-01-15 Texas Instruments Incorporated Electronic sensors with sensor die in package structure cavity
US10074639B2 (en) 2016-12-30 2018-09-11 Texas Instruments Incorporated Isolator integrated circuits with package structure cavity and fabrication methods
US10121847B2 (en) 2017-03-17 2018-11-06 Texas Instruments Incorporated Galvanic isolation device
TWI663692B (zh) * 2018-02-27 2019-06-21 菱生精密工業股份有限公司 Pressure sensor package structure
US20200031661A1 (en) * 2018-07-24 2020-01-30 Invensense, Inc. Liquid proof pressure sensor
DE102018222781A1 (de) * 2018-12-21 2020-06-25 Robert Bosch Gmbh Drucksensoranordnung
DE102020207799A1 (de) 2020-06-24 2021-12-30 Robert Bosch Gesellschaft mit beschränkter Haftung MEMS-Modul

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3885304A (en) * 1972-03-23 1975-05-27 Bosch Gmbh Robert Electric circuit arrangement and method of making the same
JPS60136254A (ja) 1983-12-23 1985-07-19 Toshiba Corp 固体撮像装置およびその製造方法
JPS6269537A (ja) * 1985-09-24 1987-03-30 Hitachi Ltd 半導体装置
US5173766A (en) * 1990-06-25 1992-12-22 Lsi Logic Corporation Semiconductor device package and method of making such a package
US5243756A (en) * 1991-06-28 1993-09-14 Digital Equipment Corporation Integrated circuit protection by liquid encapsulation
US5389738A (en) * 1992-05-04 1995-02-14 Motorola, Inc. Tamperproof arrangement for an integrated circuit device
JPH0645383A (ja) * 1992-07-27 1994-02-18 Nec Corp 樹脂封止方法及びその金型
DE4238113A1 (de) * 1992-11-12 1994-05-19 Mikroelektronik Und Technologi Anordnung zur spannungsfreien Chipmontage
US5686698A (en) * 1994-06-30 1997-11-11 Motorola, Inc. Package for electrical components having a molded structure with a port extending into the molded structure
EP0714125B1 (en) * 1994-11-24 1999-12-29 Dow Corning Toray Silicone Company Limited Method of fabricating a semiconductor device
JPH09138172A (ja) * 1995-11-14 1997-05-27 Fujikura Ltd 半導体圧力センサおよびその製造方法
JPH1197656A (ja) * 1997-09-22 1999-04-09 Fuji Electric Co Ltd 半導体光センサデバイス
JPH11274196A (ja) * 1998-03-26 1999-10-08 Seiko Epson Corp 半導体装置の製造方法およびモールドシステム並びに半導体装置
US6260417B1 (en) * 1999-10-13 2001-07-17 Denso Corporation Semiconductor pressure sensor device with multi-layered protective member that reduces void formation
JP2001118967A (ja) * 1999-10-19 2001-04-27 Sanyo Electric Co Ltd 固体撮像素子のパッケージ構造
US6841412B1 (en) * 1999-11-05 2005-01-11 Texas Instruments Incorporated Encapsulation for particle entrapment
US6483030B1 (en) * 1999-12-08 2002-11-19 Amkor Technology, Inc. Snap lid image sensor package
JP2002005951A (ja) * 2000-06-26 2002-01-09 Denso Corp 半導体力学量センサ及びその製造方法
JP4147729B2 (ja) * 2000-07-06 2008-09-10 沖電気工業株式会社 樹脂封止型半導体装置及びその製造方法
JP2002039887A (ja) 2000-07-25 2002-02-06 Denso Corp 半導体力学量センサおよびその製造方法
JP2002107249A (ja) 2000-10-03 2002-04-10 Fuji Electric Co Ltd 半導体圧力センサ
JP3888228B2 (ja) * 2002-05-17 2007-02-28 株式会社デンソー センサ装置
DE10223035A1 (de) 2002-05-22 2003-12-04 Infineon Technologies Ag Elektronisches Bauteil mit Hohlraumgehäuse, insbesondere Hochfrequenz-Leistungsmodul
DE10228593A1 (de) * 2002-06-26 2004-01-15 Infineon Technologies Ag Elektronisches Bauteil mit einer Gehäusepackung
DE10238581B4 (de) * 2002-08-22 2008-11-27 Qimonda Ag Halbleiterbauelement
KR20040033193A (ko) 2002-10-11 2004-04-21 (주)그래픽테크노재팬 이미지 센서용 반도체 칩 패키지 및 제조 방법
DE102004019428A1 (de) * 2004-04-19 2005-08-04 Infineon Technologies Ag Halbleiterbauteil mit einem Hohlraumgehäuse und Verfahren zur Herstellung desselben
DE102005015454B4 (de) * 2005-04-04 2010-02-18 Infineon Technologies Ag Halbleitersensorbauteil mit Hohlraumgehäuse und Sensorchip sowie Verfahren zur Herstellung desselben

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106233095A (zh) * 2013-12-12 2016-12-14 Sc2N公司 包括受树脂保护的传感器的装置
CN106233095B (zh) * 2013-12-12 2019-08-20 Sc2N公司 包括受树脂保护的传感器的装置

Also Published As

Publication number Publication date
US20090026558A1 (en) 2009-01-29
DE102004043663B4 (de) 2006-06-08
JP4712042B2 (ja) 2011-06-29
DE102004043663A1 (de) 2006-04-06
JP2008512647A (ja) 2008-04-24
WO2006026951A1 (de) 2006-03-16
US7749797B2 (en) 2010-07-06
CN101053086A (zh) 2007-10-10

Similar Documents

Publication Publication Date Title
CN100530699C (zh) 具有腔罩和传感器芯片的半导体传感器器件及其制造方法
US5581226A (en) High pressure sensor structure and method
US7788976B2 (en) Semiconductor acceleration sensor device and method for manufacturing the same
US9233834B2 (en) MEMS device having a suspended diaphragm and manufacturing process thereof
CN104249990B (zh) 包含流体路径的mems器件及其制造工艺
US6925885B2 (en) Pressure sensor
US20090072333A1 (en) Sensor array having a substrate and a housing, and method for manufacturing a sensor array
KR100262031B1 (ko) 반도체센서
US20050186703A1 (en) Method for packaging semiconductor chips and corresponding semiconductor chip system
CN101566510B (zh) 压力传感器及其制造方法和具备该压力传感器的电子部件
US6732590B1 (en) Pressure sensor and process for producing the pressure sensor
JP2000356561A (ja) 半導体歪みセンサ
US6254815B1 (en) Molded packaging method for a sensing die having a pressure sensing diaphragm
EP2090873B1 (en) Integrated circuit package
JP2011249484A (ja) 半導体装置の製造方法及び半導体装置
JP2004069564A (ja) 接着構造
US20070228499A1 (en) MEMS device package with thermally compliant insert
JP2001033335A (ja) 圧力検出装置およびその製造方法
US20120267153A1 (en) Coupling device, assembly having a coupling device, and method for producing an assembly having a coupling device
JP2006506653A (ja) 圧力センサ
CN103474556A (zh) 一种机械式封装led器件及机械式封装方法
JPH04106441A (ja) 圧力センサ
CN109562545A (zh) 半导体传感器及其制造方法
JP2007278761A (ja) タイヤ空気圧検出装置
JP3617441B2 (ja) センサ装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090819

Termination date: 20200818

CF01 Termination of patent right due to non-payment of annual fee