JP2012073233A - センサ装置及び半導体センサ素子の実装方法 - Google Patents
センサ装置及び半導体センサ素子の実装方法 Download PDFInfo
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Abstract
【解決手段】半導体圧力センサ素子11と、実装基板12と、半導体圧力センサ11と実装基板12との間に挟まれたレジストスペーサ52a,52b,52c,52dとを備え、半導体圧力センサ素子11と実装基板12がワイヤボンディングされる、圧力センサ装置であって、レジストスペーサ52a,52b,52c,52dは、半導体圧力センサ素子11の取り付け面11a1とダイボンド樹脂15によって接着される被取り付け面52a1,52b1,52c1,52d1を有し、被取り付け面52a1,52b1,52c1,52d1の総面積が、取り付け面11a1の総面積よりも小さいことを特徴とする、センサ装置。
【選択図】図8
Description
第1の取り付け面を有する半導体センサ素子と、
第2の取り付け面を有する基部と、
前記第1の取り付け面と前記第2の取り付け面との間に挟まれたスペーサとを備え、
前記半導体センサ素子と前記基部がワイヤボンディングされる、センサ装置であって、
前記スペーサは、前記第1の取り付け面と前記第2の取り付け面の少なくとも一方とダイボンド樹脂によって接着される被取り付け面を有し、
前記被取り付け面の総面積が、前記第1の取り付け面の総面積よりも小さい、ことを特徴とするものである。
半導体センサ素子を基部に実装する方法であって、
前記半導体センサ素子の第1の取り付け面と前記基部の第2の取り付け面との間に挟まれるスペーサは、前記第1の取り付け面の総面積よりも小さい総面積を有する被取り付け面を有していて、
前記被取り付け面にダイボンド樹脂を塗布する工程と、
前記第1の取り付け面と前記第2の取り付け面の少なくとも一方と前記被取り付け面とを前記ダイボンド樹脂によってダイボンディングする工程と、
前記半導体センサ素子と前記基部とをワイヤボンディングする工程とを有することを特徴とするものである。
図4は、回路基板21及び回路基板21に実装された圧力センサ装置2の断面図である。本発明の一実施形態である圧力センサ装置2は、実装基板12の搭載面12Aにシリコン樹脂等のダイボンド樹脂15を接着剤として接着された半導体圧力センサ素子11がハウジング16によってパッケージされた構造を有している。圧力センサ装置2は、実装基板12の取り付け面12Bに設けられた端子19と回路基板21の被取り付け面21Aに設けられた不図示のランドとがはんだ32ではんだ付けされることによって、回路基板21の被取り付け面21Aに固定されている。回路基板21は、圧力センサ装置2によって検出された圧力情報を使用する圧力計等の電子機器の基板である。回路基板21は、被取り付け面21Aと被取り付け面21Aの反対側にある裏面21Bとを有する。
10,11,111 半導体圧力センサ素子
11a,111a 枠部
11a1 取り付け面
11b,111b ダイヤフラム
11c,111c ワイヤボンディングパッド
12,112 実装基板
12A,112A 搭載面
12B,112B 取り付け面
12A1,12B1,12B2,112A1 レジスト膜
12D,112D 基材(基板)
13,113 ボンディングワイヤ
13a,113a ワイヤボール
14,114 ワイヤボンディングパッド
15,115 ダイボンド樹脂
15a ビーズ(フィラー)
16 ハウジング
17 圧力供給口
18,118 圧力導入口
19 端子
21 回路基板
21A 被取り付け面
21B 裏面
22 圧力導入口
31 接着剤
32 はんだ
51,151 レジスト膜除去面
52〜57,52a〜52d レジストスペーサ
58 メタルスペーサ
52a1,52b1,52c1,52d1 被取り付け面
60 MEMSセンサチップ
61 ガラス基板
61a 枠部
61a1 取り付け面
61b ダイヤフラム
61c ワイヤボンディングパッド
62,62a,62b,62c,62d ガラススペーサ
62a1,62b1,62c1,62d1 被取り付け面
73A,73B ボンディングワイヤ
81 半導体回路素子基板
81A 搭載面
81B 取り付け面
82,83 ワイヤボンディングパッド
91 セラミックパッケージ
92,92a,92c セラミックスペーサ
100 キャピラリ
Claims (8)
- 第1の取り付け面を有する半導体センサ素子と、
第2の取り付け面を有する基部と、
前記第1の取り付け面と前記第2の取り付け面との間に挟まれたスペーサとを備え、
前記半導体センサ素子と前記基部がワイヤボンディングされる、センサ装置であって、
前記スペーサは、前記第1の取り付け面と前記第2の取り付け面の少なくとも一方とダイボンド樹脂によって接着される被取り付け面を有し、
前記被取り付け面の総面積が、前記第1の取り付け面の総面積よりも小さい、ことを特徴とする、センサ装置。 - 前記半導体センサ素子は、前記基部とワイヤボンディングされるボンディング領域を有し、
該ボンディング領域は、前記被取り付け面の法線方向に位置する、請求項1に記載のセンサ装置。 - 前記半導体センサ素子は、ガラス基板と、該ガラス基板に接合するセンサ部とを有し、
前記ガラス基板が、前記第1の取り付け面を有し、
前記センサ部が、前記ボンディング領域を有する、請求項2に記載のセンサ装置。 - 前記スペーサは、前記基部に形成された部位である、請求項1から3のいずれか一項に記載のセンサ装置。
- 前記スペーサは、前記基部に塗布されたレジスト膜によって形成された部位である、請求項4に記載のセンサ装置。
- 前記スペーサが、前記半導体センサ素子に形成された部位である、請求項1から3のいずれか一項に記載のセンサ装置。
- 前記半導体センサ素子は、半導体圧力センサ素子であって、
前記基部は、前記半導体圧力センサ素子に圧力を導入する圧力導入口を有し、
前記スペーサは、前記圧力導入口の周りに設けられた、請求項1から6のいずれか一項に記載のセンサ装置。 - 半導体センサ素子を基部に実装する方法であって、
前記半導体センサ素子の第1の取り付け面と前記基部の第2の取り付け面との間に挟まれるスペーサは、前記第1の取り付け面の総面積よりも小さい総面積を有する被取り付け面を有していて、
前記被取り付け面にダイボンド樹脂を塗布する工程と、
前記第1の取り付け面と前記第2の取り付け面の少なくとも一方と前記被取り付け面とを前記ダイボンド樹脂によってダイボンディングする工程と、
前記半導体センサ素子と前記基部とをワイヤボンディングする工程とを有することを特徴とする方法。
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US13/219,756 US20120049300A1 (en) | 2010-08-31 | 2011-08-29 | Sensor apparatus and method for mounting semiconductor sensor device |
CN201110259814.3A CN102386238B (zh) | 2010-08-31 | 2011-08-31 | 传感器装置及半导体传感元件的安装方法 |
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CN102386238B (zh) | 2016-09-07 |
US20150235980A1 (en) | 2015-08-20 |
US20120049300A1 (en) | 2012-03-01 |
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