CN102386238A - 传感器装置及半导体传感元件的安装方法 - Google Patents
传感器装置及半导体传感元件的安装方法 Download PDFInfo
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Abstract
本发明涉及传感器装置及半导体传感元件的安装方法。本发明要解决的课题是:即使在芯片接合用树脂内混合有孔玻璃珠也可以提高引线接合强度。本发明的技术方案是:该传感器装置具有半导体压力传感元件(11)、安装基板(12)以及被夹持在半导体压力传感元件与安装基板之间的抗蚀衬垫(52a、52b、52c、52d),半导体传感元件与安装基板进行引线接合,其特征在于,抗蚀衬垫具有通过芯片接合用树脂(15)与半导体压力传感元件的安装面(11a1)粘接的被安装面(52a1、52b1、52c1、52d1),被安装面的总面积比安装面的总面积还小。
Description
技术领域
本发明涉及具有半导体传感元件的传感器装置,以及半导体传感元件的安装方法。
背景技术
图1(a)是安装有涉及相关技术的例子的半导体压力传感元件111的安装基板112的俯视图。图1(b)是涉及相关技术的例子的安装基板112及安装在安装基板112上的半导体压力传感元件111的剖视图。如图1(a)、图1(b)所示,当将检测应力的半导体压力传感元件111固定在安装基板112上时,为了吸收、缓和从外部施加到安装基板112上的应力或因半导体压力传感元件111和安装基板112的热膨胀率之差而产生的应力,通常将低弹性模量(即,柔软)的芯片接合用树脂115用作粘接剂。
可是,若在通过低弹性模量的芯片接合用树脂115固定(芯片接合)的半导体压力传感元件111上对用于与安装基板112进行电连接的接合引线113进行球焊,则由于该芯片接合用树脂115成为缓冲材料,使引线接合力(引线接合强度)降低。例如,如图2所示,接合引线113与半导体压力传感元件111的连接通过向从毛细管100供给的接合引线113的前端的引线球113a传递超声波、负荷及热量来进行。此时,若半导体压力传感元件111通过低弹性模量的芯片接合用树脂115固定在安装基板112上,则由于半导体压力传感元件111因引线接合时的负荷而倾斜地陷入,使得超声波或负荷不能充分地进行传递,因此会产生引线接合强度的降低等的麻烦。
如图3所示,为了抑制这种引线接合力的降低,作为试图通过在低弹性模量的芯片接合用树脂115内混合有孔玻璃珠(填充物)115a来提高引线接合力的现有技术文献,已知有例如专利文献1(日本特开平7-45642号公报)及专利文献2(日本特开昭63-233342号公报)。
可是,混合有孔玻璃珠的芯片接合用树脂,有可能容易使供给芯片接合用树脂的调合器的针堵塞。另外,将有孔玻璃珠混入芯片接合用树脂内,会使芯片接合用树脂的涂布性降低。再有,因管理的困难性(例如,芯片接合用树脂的保存的困难性或有孔玻璃珠的分散的控制的困难性)及将有孔玻璃珠混入芯片接合用树脂内而引起的成本的增加,有可能会使作业性及生产性降低。
发明内容
因此,本发明的目的在于提供一种即使在芯片接合用树脂内没有混合有孔玻璃珠,也可以提高引线接合强度的传感器装置及半导体传感元件的安装方法。
为了达到上述目的,本发明所涉及的传感器装置,包含:
具有第一安装面的半导体传感元件;
具有第二安装面的基部;以及
被夹持在上述第一安装面与上述第二安装面之间的衬垫;
上述半导体传感元件与上述基部进行引线接合,其特征在于,
上述衬垫具有通过芯片接合用树脂与上述第一安装面和第二安装面的至少一个面进行粘结的被安装面,
上述被安装面的总面积比上述第一安装面的总面积还小。
另外,为了达到上述目的,本发明所涉及的半导体传感元件的安装方法,
其用于将半导体传感元件安装在基部上,其特征在于,
被夹持在上述半导体传感元件的第一安装面与上述基部的第二安装面之间的衬垫具有总面积比上述第一安装面的总面积还小的被安装面,
所述安装方法具有以下工序:
在上述被安装面上涂布芯片接合用树脂的工序;
用上述芯片接合用树脂将上述第一安装面和上述第二安装面的至少一个面与上述被安装面进行芯片接合的工序;以及
将上述半导体传感元件与上述基部进行引线接合的工序。
本发明的效果为:根据本发明,即使在芯片接合用树脂内没有混合有孔玻璃珠也可以提高引线接合强度。
附图说明
图1是现有的压力传感器装置的俯视图及剖视图。
图2是表示半导体压力传感元件111的现有的安装方法的图。
图3是现有的压力传感器装置的剖视图。
图4是电路板21及安装在电路板21上的压力传感器装置2的剖视图。
图5是表示安装基板12的具体例子的外观图。
图6是表示半导体压力传感元件11的安装方法的流程图。
图7是表示图6的步骤S10的芯片接合用树脂15的涂布工序的图。
图8是表示图6的步骤S20的芯片接合工序和步骤S30的引线接合工序的图。
图9是表示引线接合强度的测定结果的图表。
图10是表示以方形环状形成的抗蚀衬垫53的图。
图11是表示形成在与框部11a的安装面11a1的四角对置的位置上的抗蚀衬垫54的图。
图12是表示相当于一个被安装面的面积小的抗蚀衬垫55的图。
图13是表示从压力导入口18以放射状延伸的抗蚀衬垫56的图。
图14是表示以圆环状形成的抗蚀衬垫57的图。
图15是表示金属衬垫58的图。
图16是本发明的一个实施方式的压力传感器装置3的剖视图。
图17是本发明的一个实施方式的压力传感器装置4的剖视图。
图中:
2、3、4-压力传感器装置,10、11、111-半导体压力传感元件,11a、111a-框部,11a1-安装面,11b、111b-隔膜,11c、111c-引线焊盘,12、112-安装基板,12A、112A-搭载面,12B、112B-安装面,12A1、12B1、12B2、112A1-抗蚀膜,12D、112D-基材(衬底),13、113-接合引线,13a、113a-引线球,14、114-引线焊盘,15、115-芯片接合用树脂,15a-有孔玻璃珠(填充物),16-壳体,17-压力供给口,18、118-压力导入口,19-端子,21-电路板,21A-被安装面,21B-背面,22-压力导入口,31-粘接剂,32-焊锡,51、151-抗蚀膜除去面,52~57、52a~52d-抗蚀衬垫,58-金属衬垫,52a1、52b1、52c1、52d1-被安装面,60-MEMS传感器芯片,61-玻璃衬底,61a-框部,61a1-安装面,61b-隔膜,61c-引线焊盘,62、62a、62b、62c、62d-玻璃衬垫,62a1、62b1、62c1、62d1-被安装面,73A、73B-接合引线,81-半导体电路元件衬底,81A-搭载面,81B-安装面,82、83-引线焊盘,91-陶瓷封装件,92、92a、92c-陶瓷衬垫,100-毛细管。
具体实施方式
以下,参照附图对用于实施本发明的方式说明。虽然在以下的实施例中以半导体压力传感元件为例进行说明,但是不言而喻,本发明并不限于此。例如,可以是使用加速度传感器、半导体麦克风等使用半导体技术形成的传感元件。
图4是电路板21及安装在电路板21上的压力传感器装置2的剖视图。作为本发明的一个实施方式的压力传感器装置2具有如下结构:以硅酮树脂等的芯片接合用树脂15作为粘接剂而粘接在安装基板12的搭载面12A上的半导体压力传感元件11用壳体16进行封装。压力传感器装置2通过利用焊锡32锡焊设置在安装基板12的安装面12B上的端子19与设置在电路板21的被安装面21A上的未图示的地线而固定在电路板21的被安装面21A上。电路板21是使用由压力传感器装置2检测出的压力信息的压力计等的电子设备的基板。电路板21具有被安装面21A和在被安装面的21A的相反侧的背面21B。
安装基板12是用于固定半导体压力传感元件11的、压力传感器装置2的基部。安装基板12具有安装半导体压力传感元件11的搭载面12A。半导体压力传感元件11利用接合引线13引线接合在形成于搭载面12A上的引线焊盘14上。半导体压力传感元件11收放在由环氧树脂等的粘接剂31粘接在安装基板12的搭载面12A上的壳体16内。
半导体压力传感元件11将从形成于壳体16上的筒状的压力供给口17供给的气体等的流体的压力作为被测压力进行检测。半导体压力传感元件11是形成有检测压力的隔膜11b的元件,其既可以是将隔膜11b的变形作为电阻值的变化进行检测的半导体变形测量方式的元件,也可以是将隔膜11b的移位作为静电电容的变化而进行检测的静电电容方式的元件,还可以是以其它检测方式检测被测压力的元件。半导体压力传感元件11以隔膜11b被夹持在壳体16的压力供给口17和安装基板12的压力导入口18之间的方式设置在压力供给口17的下方且压力导入口18的上方。由于隔膜的变形(或者位移)随着从压力供给口17施加的被测压力与从压力导入口18施加的大气压的压差产生变化,因此通过将其变形量(或者位移量)作为电阻值(或者静电电容值)的变化量进行检测,可以测定被测压力。
半导体压力传感元件11具有隔膜11b和从下方支撑隔膜11b的框部11a。框部11a以包围隔膜11b的压力导入口18侧的下面的四周的方式向搭载面12A的方向延伸而形成在该下面的周缘上。通过利用芯片接合用树脂15将方形环状的框部11a芯片接合在安装基板12的搭载面12A上,由此安装半导体压力传感元件11。对于将半导体压力传感元件11安装在安装基板12上的详细说明,在后面进行描述。
压力导入口18是形成在安装基板12的搭载面12A与安装面12B之间的第一贯通孔,压力导入口22是形成在电路板21的被安装面21A与背面21B之间的第二贯通孔。压力导入口22的口径比压力导入口18的口径还大。压力传感器装置2以安装基板12的压力导入口18与电路板21的压力导入口22连通的方式,以安装基板12的安装面12B与电路板21的被安装面21A对置的状态,通过在端子19上附着焊锡32来表面安装在电路板21上。由此,可以将壳体16外部的大气压引导至半导体压力传感元件11的隔膜11b上。
压力导入口18以贯通安装基板12的搭载面12A与安装面12B的方式形成在半导体压力传感元件11的隔膜11b的下方。标记18A是压力导入口18的搭载面12A侧的开口部,标记18B是压力导入口18的安装面12B侧的开口部。
如图4、图5(c)所示,安装基板12具有圆环凹状的阶梯部41。阶梯部41通过除去形成在安装面12B上的抗蚀膜12B1的一部分而形成在抗蚀膜除去部42(与压力导入口18接触的部位)与端子19之间。在图5中作为端子19举例表示了多个端子19a~19n。通过这样形成的阶梯部41,当压力传感器装置2锡焊在电路板21上时,可以防止附着在安装面12B的端子19上的焊锡内的液态的焊剂在抗蚀膜12B1的表面上流动而堵塞压力导入口18的开口部18B。
图5是表示了安装基板12的具体例子的外观图。图5(a)是从安装基板12的搭载面12A侧观察的俯视图。图5(b)是从安装基板12的侧面12C侧观察的侧视图。图5(c)是从安装基板12的安装面12B侧观察的仰视图。该安装基板12的材质是FR4。在图5中,斑点部分是没有抗蚀膜但实施了镀金处理的电极部位。另外,网格部分是既没有抗蚀膜也没有铜箔的安装基板12的基材12D(参照图7(b))的部位。12A1、12B1、12B2是形成在基材12D的表面上的抗蚀膜。形成在安装基板12的周缘部上的多个端子19(19a~19n)通过未图示的配线图案与引线焊盘14电连接。各端子19通过侧面12C横跨搭载面12A与安装面12B而形成。
抗蚀衬垫52(52a、52b、52c、52d)是用于放置半导体压力传感元件11的框部11a的台座。抗蚀衬垫52是通过除去搭载面12A侧的抗蚀膜12A1而形成在压力导入口18的开口部18A和端子19之间的凸部。标记51是通过除去抗蚀膜12A1而露出的抗蚀膜除去面。即,抗蚀衬垫52相对于抗蚀膜除去面51而突出,并且在压力导入口18的开口部18A的周围与开口部18A隔着间隔而形成。通过与开口部18A隔着间隔设置抗蚀衬垫52,从而使为将半导体压力传感元件11粘接在抗蚀衬垫52上而涂布在抗蚀衬垫52上的芯片接合用树脂难以流到开口部18A。其结果,可以使压力导入口18不容易被芯片接合用树脂堵塞。另外,通过在压力导入口18的开口部18A的圆周方向上等间隔地配置各抗蚀衬垫52,可以使半导体压力传感元件11稳定地粘接在各抗蚀衬垫52上。
考虑到芯片接合用树脂的粘度等,抗蚀衬垫52的高度(厚度)最好是通常进行芯片接合时的树脂层的厚度(例如,20μm以上30μm以下的厚度)以下,但是也可以根据使用的芯片接合用树脂的粘度或可湿性、以及芯片接合负荷而变化。
其次,参照图6、图7及图8,对将半导体压力传感元件11安装在设置有抗蚀衬垫52的安装基板12上的方法进行说明。图6是表示半导体压力传感元件11的安装方法的流程图。图7是表示图6的步骤S10的芯片接合用树脂涂布工序的图。图8是表示图6的步骤S20的芯片接合工序和步骤S30的引线接合工序的图。图7(a)及图8(a)表示安装基板12的俯视图。图7(b)及图8(b)表示安装基板12的剖视图。
如图7所示,在芯片接合用树脂涂布工程(图6的步骤S10)中,以覆盖整个抗蚀衬垫52的方式从抗蚀衬垫52的上方涂布芯片接合用树脂15。在这种情况下,可以以与通常的涂布条件相同的条件进行涂布。图7(a)的斜线部分表示涂布有芯片接合用树脂15的范围。通过这样涂布芯片接合用树脂15,使芯片接合用树脂15堆积在作为各个抗蚀衬垫52的上侧平面的被安装面52a1、52b1、52c1、52d1上。
其次,如图8所示,在芯片接合工序(图6的步骤S20)中,将作为半导体压力传感元件11的框部11a的下侧平面的安装面11a1,以夹持芯片接合用树脂15的方式粘接在被安装面52a1、52b1、52c1、52d1上。
其次,如图8所示,在引线接合工序(图6的步骤S30)中,利用接合引线13对形成在半导体压力传感元件11的上面的引线焊盘11c和形成在安装基板12的搭载面12A上的引线焊盘14进行引线接合。
最初,在使从毛细管供给的接合引线13的前端的引线球13a与引线焊盘11c接触的状态下,通过向引线球13a传递超声波、负荷及热量来焊接引线球13a和引线焊盘11c。然后,使毛细管移动至引线焊盘14上,通过向接合引线13传递超声波、负荷及热量来焊接接合引线13和引线焊盘14。
引线焊盘11c形成在半导体压力传感元件11上面的隔膜11b的周缘部上。引线焊盘11c配置在如下位置:若从半导体压力传感元件11的上面对引线焊盘11c的外形进行投影,则抗蚀衬垫52的被安装面52a1等重叠在其投影范围内。即,引线焊盘11c以半导体压力传感元件11安装在安装基板12上的状态,以位于抗蚀衬垫52的被安装面52a1、52b1、52c1、52d1中的至少一个被安装面的法线上的方式,形成在隔膜11b的周缘部上。就提高芯片合接强而言,比起仅仅使抗蚀衬垫52的被安装面52a1等的一部分重叠在其投影范围内,最好完全包含在其中。
在此,若安装面11a1与被安装面52a1等之间的低弹性模量(例如1MPa以下)的芯片接合用树脂15过于厚,则当在引线接合工序中向引线球13a传递超声波、负荷及热量时,会产生半导体压力传感元件11的倾斜陷入、引线接合强度的降低等的麻烦。
相对于此,在本实施例中,由于抗蚀衬垫52采用台座的形状(结构),即使在芯片接合用树脂涂布工序中,向抗蚀衬垫52的被安装面52a1、52b1、52c1、52d1供给了过剩的芯片接合用树脂15,也可以使多余的芯片接合用树脂15流落到低于被安装面52a1、52b1、52c1、52d1位置的抗蚀膜除去面51上,躲到抗蚀衬垫52的腋部。其结果,由于不会使堆积在被安装面52a1、52b1、52c1、52d1上的芯片接合用树脂15的厚度厚于所需厚度以上,因此即使在引线接合工序中向引线球13a传递超声波、负荷及热量,也可以抑制半导体压力传感元件11的陷入和引线接合强度的降低。
另外,被安装面52a1、52b1、52c1、52d1以安装面11a1的面积S1大于被安装面52a1、52b1、52c1、52d1的总面积S2(即,被安装面52a1、52b1、52c1、52d1的面积的总和)的方式形成。换言之,被安装面52a1、52b1、52c1、52d1的总面积S2比安装面11a1的总面积S1还要小。安装面11a1为方形环状,具有均匀的平面。如图7(a)所示的点划线所包围的方形环状区域S1表示安装面11a1的面积。以被安装面52a1、52b1、52c1、52d1的总面积S2小于安装面11a1的面积S1的方式形成被安装面52a1、52b1、52c1、52d1,由此可以在安装面11a1的下方形成空间。即,由于被安装面52a1、52b1、52c1、52d1的总面积S2小于安装面11a1的面积S1,因此在芯片接合工序中,当安装面11a1隔着芯片接合用树脂15而与被安装面52a1、52b1、52c1、52d1接触时,可以容易使芯片接合用树脂15流落到抗蚀膜除去面51上而躲到抗蚀衬垫52的腋部(即,安装面11a1下方的空间)。其结果,不会使被夹持在安装面11a1和被安装面52a1、52b1、52c1、52d1之间的芯片接合用树脂15的厚度成为所需厚度以上的厚度。因此,即使在引线接合工序中向引线球13a传递超声波、负荷及热量,也可以抑制半导体压力传感元件11的陷入和引线接合强度的降低。
另外,在芯片接合工序中,对被夹在安装面11a1与被安装面52a1、52b1、52c1、52d1之间的芯片接合用树脂15施加的负荷,比起总面积S2大于总面积S1的情况、总面积S2小于总面积S1的情况的负荷还要大。这是因为,若在芯片接合工序中使半导体压力传感元件11安装在安装基板12上时的安装负荷在总面积S2小于总面积S1的情况的负荷与总面积S2大于总面积S1的情况的负荷相同,则施加在被安装面52a1等上的应力会增加。从而,由于可以通过使总面积S2小于总面积S1来使被夹持在安装面11a1与被安装面52a1等之间的芯片接合用树脂15的厚度变薄,因此即使在引线接合工序中向引线球13a传递超声波、负荷及热量,也可以抑制半导体压力传感元件11的陷入和引线接合强度的降低。
图9是表示引线接合强度的测试结果的图表。将半导体压力传感元件11以相互相同的条件安装在具有抗蚀衬垫52的情况(参照图7、图8)及不具有抗蚀衬垫52的情况(参照图1)的两种安装基板12上,由此测定半导体压力传感元件11与安装基板12的粘接强度(芯片剪切强度Die shear strength)及半导体压力传感元件11与引线球13a的接合强度(引线球剪切强度Ball shearstrength)。图9所示的测定结果是表示将不具有抗蚀衬垫52的情况下的芯片剪切强度及引线球剪切强度设定为1时的具有抗蚀衬垫52的情况下的芯片剪切强度及引线球剪切强度。如图9所示,具有抗蚀衬垫52的情况比起不具有抗蚀衬垫52的情况,芯片剪切强度提高至大约8倍,引线球剪切强度提高至大约4倍。
另外,如文字所述,通过使被安装面52a1、52b1、52c1、52d1的总面积S2小于安装面11a1的总面积S1,使得半导体压力传感元件11的安装面11a1与安装基板12的搭载面12A的接触面的面积变小。从而,由于其接触面的面积变小,因此可以使吸收、缓和从外部施加到安装基板12上的应力或者因半导体压力传感元件11与安装基板12的热膨胀率之差而产生的应力的效果变大,能够提高半导体压力传感元件11的检测精度。
另外,无需在芯片接合用树脂15中混合有孔玻璃珠,因此不会产生附加的成本。由于没有混合有孔玻璃珠,因此芯片接合用树脂的涂布条件可以沿用现有的通常的涂布条件。另外,在使用混合了有孔玻璃珠的树脂的情况下,由于存在于涂布在基板上的树脂中的有孔玻璃珠成为不确定因素,因此没有混合有孔玻璃珠的情况比起混合了有孔玻璃珠的情况,能够得到稳定且可靠的作为衬垫(台座)的效果。另外,没有混合有孔玻璃珠的情况比起混合了有孔玻璃珠的情况,容易确保接合强度。另外,由于无需考虑有孔玻璃珠的压坏或破碎,因此可以降低芯片接合时的负荷控制的所要求的精度。
另外,由于通过除去安装基板12的抗蚀膜来生成台座,因此不需要例如玻璃衬垫的其它部件。由此,可以以简单的结构制造半导体压力传感元件11。
以上,虽然对本发明的最优的实施例进行了详细说明,但是本发明并不限于上述实施例,在不脱离本发明的范围的前提下可以对上述实施例进行各种变形及置换。
例如,对于具有通过芯片接合用树脂15粘接在半导体压力传感元件11的框部11a的安装面11a1上的被安装面的台座的形状,可以考虑图10~图15所示的变形例。就图10~图15所示的任意一个台座而言,台座的被安装面的总面积也小于半导体压力传感元件11的框部11a的安装面11a1的总面积。
图10是表示以方形环状形成的抗蚀衬垫53的图。通过做成图10的形状,可以提高引线接合强度。另外,由于芯片接合用树脂15沿着抗蚀衬垫53进行附着,因此容易对流向大气导入口18的芯片接合用树脂15的流动进行调整。图11是表示形成在与框部11a的安装面11a1的四角相对置的位置上的抗蚀衬垫54的图。图12是表示相当于一个被安装面的面积比例如上述抗蚀衬垫52的被安装面的面积还小的抗蚀衬垫55的图。图13是表示从压力导入口18以放射状延伸的抗蚀衬垫56的图。通过做成图13所示的形状,可以使半导体压力传感元件11与预定的安装位置相比错开的情况下的容许误差变大。图14是表示以圆环状形成的抗蚀衬垫57的图。通过做成图14的形状,由于芯片接合用树脂15沿着抗蚀衬垫57进行附着,因此容易对流向大气导入口18的芯片接合用树脂15的流动进行调整。图15是表示金属衬垫58的图。金属衬垫58不是由抗蚀膜形成,也可以由安装基板12内层的铜箔形成。或者,金属衬垫58还可以通过在安装基板12上涂布镀金等的金属而形成。
图16是本发明的一个实施方式的压力传感器装置3的剖视图。对于与上述的实施方式相同的结构省略其说明。压力传感器装置3具有如下结构:半导体压力传感元件10与半导体电路元件衬底81的层叠结构(堆积结构)通过芯片接合用树脂15粘接在安装基板12上。
半导体压力传感元件10具有微电子力学系统(MEMS-Micro ElectroMechanical Systems)传感芯片60和玻璃衬底61。通过对MEMS传感芯片60的框部61a的底面与玻璃衬底61的上表面进行阳极接合,用玻璃衬底61封装被MEMS传感芯片60的框部61a包围的空间。MEMS传感芯片60是具有与上述的半导体压力传感元件11相同结构的压力传感部。
与上述的抗蚀衬垫52等相同地,在玻璃衬底61的安装面61a1与半导体电路元件衬底81的搭载面81A之间夹持有玻璃衬垫62。玻璃衬垫62具有与抗蚀衬垫52等相同的结构即可,例如由在X轴方向上相互对向配置的两个玻璃衬垫62a、62c与在Y轴方向上相互对向配置的两个玻璃衬垫62b、62d(未图示)构成。
玻璃衬垫62例如在MEMS传感芯片60的框部61a的底面与玻璃衬底61的接合工序之前,一体形成在玻璃衬底61的安装面61a1上。具体地讲,玻璃衬垫62通过蚀刻、喷砂等的方法直接形成在安装面61a1上即可。
玻璃衬垫62具有通过芯片接合用树脂15与搭载面81A粘接的被安装面62a1、62b1、62c1、62d1。在图16中,图示了玻璃衬垫62a的被安装面62a1与玻璃衬垫62c的被安装面62c1,省略了玻璃衬垫62b的被安装面62b1与玻璃衬垫62d的被安装面62d1。
另外,被安装面62a1、62b1、62c1、62d1以安装面61a1的面积S3大于被安装面62a1、62b1、62c1、62d1的总面积S4(即,被安装面62a1、62b1、62c1、62d1的面积的总和)的方式形成。换言之,被安装面62a1、62b1、62c1、62d1的总面积S4比安装面61a1的总面积S3还要小。安装面61a1为方形,具有均匀的平面。以被安装面62a1、62b1、62c1、62d1的总面积S4小于安装面61a1的面积S3的方式形成被安装面62a1、62b1、62c1、62d1,由此可以在安装面61a1的下方形成空间。即,由于被安装面62a1、62b1、62c1、62d1的总面积S4小于安装面61a1的面积S3,因此在芯片接合工序中,当搭载面81A隔着芯片接合用树脂15而与被安装面62a1、62b1、62c1、62d1接触时,可以容易使芯片接合用树脂15躲到玻璃衬垫62的腋部(即,安装面61a1下方的空间)。其结果,不会使被夹持在安装面61a1与被安装面62a1、62b1、62c1、62d1之间的芯片接合用树脂15的厚度成为所需厚度以上的厚度。因此,即使在引线接合工序中向引线球13a传递超声波、负荷及热量,也可以抑制半导体压力传感元件10的陷入和引线接合强度的降低。
另外,在芯片接合工序中,对被夹持在安装面61a1与被安装面62a1、62b1、62c1、62d1之间的芯片接合用树脂15施加的负荷,比起总面积S4大于总面积S3的情况、总面积S4小于总面积S3的情况的负荷还要大。这是因为,若在芯片接合工序中将半导体压力传感元件10安装在半导体电路元件衬底81上时的安装负荷与总面积S4小于总面积S3的情况的负荷和总面积S4大于总面积S3的情况的负荷相同,则施加在被安装面62a1等上的应力会增加。从而,由于可以通过使总面积S4小于总面积S3来使被夹持在安装面61a1与被安装面62a1等之间的芯片接合用树脂15的厚度变薄,因此即使在引线接合工序中向引线球13a传递超声波、负荷及热量,也可以抑制半导体压力传感元件10的陷入和引线接合强度的降低。
此外,玻璃衬垫62可以不是与玻璃衬底61一体形成的部位,而是与玻璃衬底61不同的玻璃部件。另外,也可以将玻璃衬垫62置换成由玻璃以外的材质形成的衬垫(例如,以凸状形成在半导体电路元件衬底81的搭载面81A上的抗蚀衬垫)。这种情况的衬垫的被安装面通过芯片接合用树脂粘接在玻璃衬底61的安装面61a1上即可。
这样,可以通过玻璃衬垫62确保连结半导体电路元件衬底81的引线焊盘83和半导体压力传感元件10的引线焊盘61c的接合引线73A的接合力。另外,引线焊盘61c以半导体压力传感元件10安装在半导体电路元件衬底81上的状态,以位于玻璃衬垫62的被安装面62a1、62b1、62c1、62d1中的至少一个被安装面的法线上的方式,形成在隔膜61b的周缘部上。由此,可以进一步提高接合引线73A的引线接合强度。
另外,由于使抗蚀衬垫52的被安装面的总面积比半导体电路元件衬底81的下侧的安装面81B的面积还要小,因此就连结半导体电路元件衬底81的引线焊盘82与安装基板12的引线焊盘14的接合引线73B的引线接合力而言,可以通过抗蚀衬垫52确保引线接合力。另外,引线焊盘61c以半导体电路元件衬底81安装在安装基板12上的状态,以位于抗蚀衬垫52的被安装面中的至少一个被安装面的法线上的方式,形成在隔膜61b的周缘部上。由此,可以进一步提高接合引线73A的引线接合强度。
图17是本发明的一个实施方式的压力传感器装置4的剖视图。对于与上述的实施方式相同的结构省略其说明。压力传感器装置4具有如下结构:半导体压力传感元件10与半导体电路元件衬底81的层叠结构(堆积结构)粘接在陶瓷封装件91上。
就半导体压力传感元件10与半导体电路元件衬底81的引线接合、半导体电路元件衬底81与陶瓷封装件91的引线接合而言,与图16的情况相同。就半导体电路元件衬底81与陶瓷封装件91的引线接合而言,可以通过一体形成在陶瓷封装件91的内部的陶瓷衬垫92(92a,92c)确保半导体电路元件衬底81与陶瓷封装件91的引线接合力。
由于陶瓷衬垫的情况也与抗蚀衬垫或玻璃衬垫的情况相同地不会使堆积在陶瓷衬垫的被安装面上的芯片接合用树脂15的厚度成为所需厚度以上的厚度,因此即使在引线接合工序中向引线球13a传递超声波、负荷及热量,也可以抑制半导体压力传感元件10的陷入和引线接合强度的降低。
Claims (8)
1.一种传感器装置,包含:
具有第一安装面的半导体传感元件;
具有第二安装面的基部;以及
被夹持在上述第一安装面与上述第二安装面之间的衬垫;
上述半导体传感元件与上述基部进行引线接合,其特征在于,
上述衬垫具有通过芯片接合用树脂与上述第一安装面和上述第二安装面的至少一个面粘接的被安装面,
上述被安装面的总面积比上述第一安装面的总面积还小。
2.根据权利要求1所述的传感器装置,其特征在于,
上述半导体传感元件具有与上述基部引线接合的焊接区域,
该焊接区域位于上述被安装面的法线方向上。
3.根据权利要求2所述的传感器装置,其特征在于,
上述半导体传感元件具有玻璃基板与接合在该玻璃基板上的传感部,
上述玻璃基板具有上述第一安装面,
上述传感部具有上述焊接区域。
4.根据权利要求1至3的任一项所述的传感器装置,其特征在于,
上述衬垫为形成在上述基部上的部位。
5.根据权利要求4所述的传感器装置,其特征在于,
上述衬垫为通过涂布在上述基部上的抗蚀膜而形成的部位。
6.根据权利要求1至3的任一项所述的传感器装置,其特征在于,
上述衬垫为形成在上述半导体传感元件上的部位。
7.根据权利要求1至6的任一项所述的传感器装置,其特征在于,
上述半导体传感元件为半导体压力传感元件,
上述基部具有向上述半导体压力传感元件导入压力的压力导入口,
上述衬垫设置在上述压力导入口的周围。
8.一种半导体传感元件的安装方法,其用于将半导体传感元件安装在基部上,其特征在于,
被夹持在上述半导体传感元件的第一安装面与上述基部的第二安装面之间的衬垫具有总面积比上述第一安装面的总面积还小的被安装面,
所述安装方法具有以下工序:
在上述被安装面上涂布芯片接合用树脂的工序;
用上述芯片接合用树脂来将上述第一安装面和上述第二安装面的至少一个面与上述被安装面进行芯片接合的工序;以及
将上述半导体传感元件与上述基部进行引线接合的工序。
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2015
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CN106461474A (zh) * | 2014-06-27 | 2017-02-22 | 北陆电气工业株式会社 | 力检测器 |
CN106461474B (zh) * | 2014-06-27 | 2019-04-30 | 北陆电气工业株式会社 | 力检测器 |
CN108827521A (zh) * | 2017-04-26 | 2018-11-16 | 三美电机株式会社 | 力传感器装置 |
CN108827521B (zh) * | 2017-04-26 | 2021-10-22 | 美蓓亚三美株式会社 | 力传感器装置 |
Also Published As
Publication number | Publication date |
---|---|
US20150235980A1 (en) | 2015-08-20 |
CN102386238B (zh) | 2016-09-07 |
JP2012073233A (ja) | 2012-04-12 |
US20120049300A1 (en) | 2012-03-01 |
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