JP4492432B2 - 物理量センサ装置の製造方法 - Google Patents
物理量センサ装置の製造方法 Download PDFInfo
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- JP4492432B2 JP4492432B2 JP2005141066A JP2005141066A JP4492432B2 JP 4492432 B2 JP4492432 B2 JP 4492432B2 JP 2005141066 A JP2005141066 A JP 2005141066A JP 2005141066 A JP2005141066 A JP 2005141066A JP 4492432 B2 JP4492432 B2 JP 4492432B2
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- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
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- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
図1は、本発明の第1実施形態に係る物理量センサ装置としての角速度センサ装置S1の概略断面構成を示す図である。
図1に示されるように、この角速度センサ装置S1は、大きくは、パッケージ100と、パッケージ100に弾性部材としての接着剤400を介して保持された回路基板300と、回路基板300に積層されて接着フィルム600を介して接着された角速度検出を行うセンサ素子200と、各部を接続するボンディングワイヤ500とを備えて構成されている。
このような構成を有する本角速度センサ装置S1の製造方法について、図3、図4を参照して説明する。図3、図4は、本製造方法を説明するための工程図であり、各製造工程におけるワークを上記図1と同一の視点からみた概略断面図である。
ところで、物理量としての角速度検出を行うセンサ素子200を、弾性を有する弾性部材としての接着剤400を介してパッケージ100に搭載し、保持させてなる物理量センサ装置としての角速度センサ装置において、接着剤400よりもセンサ素子200側の部位には、強磁性体からなる磁性部材700が設けられていることを特徴とする角速度センサ装置S1が提供される。
図5は、本発明の第2実施形態に係る物理量センサ装置としての角速度センサ装置S2の概略断面構成を示す図である。
図6は、本発明の第3実施形態に係る物理量センサ装置としての角速度センサ装置S3の概略断面構成を示す図である。
図7は、本発明の第4実施形態に係る角速度センサ装置S4の概略断面構成を示す図である。本実施形態は、第1および第2の磁性部材710、720を有する上記第3実施形態の装置の一部を変形したものである。
なお、上記した第1および第2の磁性部材710、720からなる磁性部材700を用いた角速度センサ装置においては、これら磁性部材710、720が回路基板300とパッケージ100との間に介在していたが、回路基板300とセンサ素子200との間に介在していてもよい。
400…弾性部材としての接着剤、500…ボンディングワイヤ、
600…接着部材、700…磁性部材、710…第1の磁性部材、
720…第2の磁性部材、730…磁性部材の突起部、740…磁性部材の突出部。
Claims (8)
- 物理量検出を行うセンサ素子(200)を、弾性を有する弾性部材(400)を介してパッケージ(100)に搭載し、保持させてなる物理量センサ装置の製造方法において、
前記弾性部材(400)よりも前記センサ素子(200)側の部位に、強磁性体から
なる磁性部材(700)を設けた状態で、前記センサ素子(200)を、前記弾性部材(400)を介して前記パッケージ(100)に搭載し、
前記パッケージ(100)における前記センサ素子(200)の搭載側とは反対側に、前記磁性部材(700)を磁力によって強固に固定する磁性部材固定手段(800)を設け、
前記磁性部材固定手段(800)および前記磁性部材(700)による磁力によって前記センサ素子(100)を前記パッケージ(100)に強固に固定した状態で、前記センサ素子(100)にワイヤボンディングを行うことにより、前記センサ素子(100)と前記パッケージ(100)とをボンディングワイヤ(500)を介して接続することを特徴とする物理量センサ装置の製造方法。 - 前記物理量センサ装置においては、前記磁性部材(700)は、前記弾性部材(400)と前記センサ素子(200)との間に介在していることを特徴とする請求項1に記載の物理量センサ装置の製造方法。
- 前記物理量センサ装置においては、前記パッケージ(100)上には、前記弾性部材(400)を介して回路基板(300)が搭載され、この回路基板(300)上に前記センサ素子(200)が積層固定されており、
前記磁性部材(700)は、前記弾性部材(400)と前記回路基板(300)との間に介在していることを特徴とする請求項2に記載の物理量センサ装置の製造方法。 - 前記物理量センサ装置においては、前記パッケージ(100)上には、回路基板(300)が搭載されて固定され、この回路基板(300)上に前記弾性部材(400)を介して前記センサ素子(200)が積層されており、
前記磁性部材(700)は、前記弾性部材(400)と前記センサ素子(200)との間に介在していることを特徴とする請求項2に記載の物理量センサ装置の製造方法。 - 前記物理量センサ装置においては、前記磁性部材(700)は、前記弾性部材(400)よりも前記センサ素子(200)側の部位に位置する第1の磁性部材(710)と、この第1の磁性部材(710)に対向して前記弾性部材(400)よりも前記パッケージ(100)側の部位に位置する第2の磁性部材(720)とからなり、
これら第1の磁性部材(710)および第2の磁性部材(720)により、前記弾性部材(400)を挟んだ形となっていることを特徴とする請求項1ないし4のいずれか1つに記載の物理量センサ装置の製造方法。 - 前記物理量センサ装置においては、前記第1の磁性部材(710)および前記第2の磁性部材(720)が互いに対向する部位のうち少なくとも一方には、これら両磁性部材(710、720)間における前記弾性部材(400)の厚さを保持するための突起部(730)が設けられていることを特徴とする請求項5に記載の物理量センサ装置の製造方法。
- 前記物理量センサ装置においては、前記第1の磁性部材(710)の端部は、前記パッケージ(100)と対向しており、
この第1の磁性部材(710)の端部には、前記パッケージ(100)の方へ突出する突出部(740)が設けられており、この突出部(740)により、前記両磁性部材(710、720)間における前記弾性部材(400)の厚さを保持するようにしていることを特徴とする請求項5または6に記載の物理量センサ装置の製造方法。 - 前記物理量センサ装置においては、前記弾性部材(400)は、樹脂からなる接着剤であることを特徴とする請求項1ないし7のいずれか1つに記載の物理量センサ装置の製造方法。
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Application Number | Priority Date | Filing Date | Title |
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JP2005141066A JP4492432B2 (ja) | 2005-05-13 | 2005-05-13 | 物理量センサ装置の製造方法 |
US11/417,109 US20060255441A1 (en) | 2005-05-13 | 2006-05-04 | Physical quantity sensor device |
DE102006022064.1A DE102006022064B4 (de) | 2005-05-13 | 2006-05-11 | Sensorvorrichtung für eine physikalische Grösse |
US12/588,736 US8143083B2 (en) | 2005-05-13 | 2009-10-27 | Physical quantity sensor device and method for producing the same |
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JP2005141066A JP4492432B2 (ja) | 2005-05-13 | 2005-05-13 | 物理量センサ装置の製造方法 |
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JP2006317321A JP2006317321A (ja) | 2006-11-24 |
JP4492432B2 true JP4492432B2 (ja) | 2010-06-30 |
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US20100043550A1 (en) | 2010-02-25 |
US8143083B2 (en) | 2012-03-27 |
DE102006022064A1 (de) | 2006-11-16 |
JP2006317321A (ja) | 2006-11-24 |
US20060255441A1 (en) | 2006-11-16 |
DE102006022064B4 (de) | 2014-10-16 |
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