JP4712042B2 - 空洞ハウジングおよびセンサチップを含む半導体センサ装置、および、その製造方法 - Google Patents
空洞ハウジングおよびセンサチップを含む半導体センサ装置、および、その製造方法 Download PDFInfo
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Description
ゴム製で弾力性のある組成物におけるチップの埋設については、JP60‐136254の図4に開示されている。あらゆる側面への埋設については、DE 42 38 113 A1に開示されている。
Claims (10)
- 空洞ハウジング(1)とセンサ領域(4)を有するセンサチップ(3)とを備えた半導体センサ装置であって、前記センサチップは、前記空洞ハウジング(1)の空洞(2)内に設けられており、前記空洞ハウジング(1)は、周囲(6)への開口(5)を有しており、前記センサ領域(4)は、前記開口(5)に対向しており、前記センサチップ(3)は、前記ハウジング(1)の前記空洞(2)内において、あらゆる側面がゴム製で弾力性のある組成物(7)に埋め込まれており、前記空洞ハウジング(1)が、貫通開口部(18)を有する底部(17)を有しており、
前記貫通開口部は、前記ゴム製で弾力性のある組成物を通って前記センサチップの背面側に伸びている半導体センサ装置。 - 請求項1に記載の半導体センサ装置のための空洞ハウジングであって、
前記空洞ハウジング(1)は、空洞(2)を区切る少なくとも1つの底部(17)と側壁(19)とを有し、スペーサ(22)の除去可能な端部(21)が底部(17)から突出しており、前記スペーサ(22)の前記端部(21)は、前記スペーサ(22)の前記端部(21)上に位置づけられたセンサチップ(3)上のボンディングワイヤ(14)の構成のための支持体を形成する空洞ハウジング。 - 前記スペーサ(22)は、前記底部(17)を通って前記空洞(2)に突き出たピンである請求項2記載の空洞ハウジングを備えた半導体センサ装置。
- 前記底部(17)から突き出た前記スペーサ(22)の端部(21)は、前記ゴム製で弾力性のある組成物(7)によって封止されている請求項3に記載の半導体センサ装置。
- 空洞ハウジング(1)とセンサ領域(4)を有するセンサチップ(3)とを備えた半導体センサ装置(20)の製造方法であって、前記センサチップは、前記空洞ハウジング(1)の空洞(2)に設けられており、
内部導体トラック(23)と外部接触部(16)と空洞底部(17)と、前記空洞底部(17)を囲む側壁(19)と、前記空洞底部(17)から突出するスペーサ(22)の端部(17)とを備えた空洞ハウジング(1)を形成し、前記スペーサ(22)の配置及び寸法は、センサチップ(3)の背面側(10)の領域範囲に適合されており、前記スペーサ(22)の端部(21)は、前記スペーサ(22)の端部(21)上に位置するセンサチップ(3)上のボンディングワイヤ(14)の構成のための支持体を形成しており、
前記空洞ハウジング(1)の前記空洞(2)の底部(17)を、少なくとも前記スペーサ(22)の端部(21)までゴム製で弾力性のある組成物(7)で満たし、
センサチップ(3)をその背面側(10)で前記スペーサ(22)の端部(21)に当てて、前記ゴム製で弾力性のある組成物(7)上に前記センサチップ(3)を固定し、
前記センサチップ(3)の接触領域(24)上にボンディングワイヤ(14)を接着させ、
前記ボンディングワイヤ(14)と前記センサチップ(3)とを前記ゴム製で弾力性のある組成物(7)に埋め込み、
前記底部(17)から前記スペーサ(22)を除去して前記空洞ハウジング(1)の底部(17)に貫通開口部(18)を形成し、
前記貫通開口部は、前記ゴム製で弾力性のある組成物を通って前記センサチップの背面側に伸びている方法。 - 内部導体トラック(23)と外部接触部(16)とを備えた空洞ハウジング(1)を形成するために、まず、複数のハウジング位置を備えたリードフレームを製造し、前記ハウジング位置内にキャストインスペーサを備えた前記側壁(19)と前記底部(17)とが、注入成形技術によって製造され、この目的のために、注入成形する前に注入型の中に前記スペーサ(22)が配置される請求項5記載の方法。
- 前記リードフレームは、注入成形動作の後に、前記リードフレームとともに完成された半導体センサ装置(20)から除去されるスペーサ(22)を有している請求項5または請求項6記載の方法。
- ディスペンス技術によって、前記空洞ハウジング(1)の空洞の底部(17)をゴム製で弾力性のある組成物(7)で満たす請求項5〜7のいずれか1項記載の方法。
- 熱圧着または熱圧着ボンディングによって、ボンディングワイヤ(14)を前記センサチップ(3)の接触領域(24)に適合させる請求項5〜8のいずれか1項記載の方法。
- エッチング技術によって、前記スペーサ(22)を除去する請求項5〜9のいずれか1項記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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DE102004043663.0 | 2004-09-07 | ||
DE200410043663 DE102004043663B4 (de) | 2004-09-07 | 2004-09-07 | Halbleitersensorbauteil mit Hohlraumgehäuse und Sensorchip und Verfahren zur Herstellung eines Halbleitersensorbauteils mit Hohlraumgehäuse und Sensorchip |
PCT/DE2005/001453 WO2006026951A1 (de) | 2004-09-07 | 2005-08-18 | Halbleitersensorbauteil mit hohlraumgehäuse und sensorchip und verfahren zur herstellung desselben |
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JP2008512647A JP2008512647A (ja) | 2008-04-24 |
JP4712042B2 true JP4712042B2 (ja) | 2011-06-29 |
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JP2007529314A Active JP4712042B2 (ja) | 2004-09-07 | 2005-08-18 | 空洞ハウジングおよびセンサチップを含む半導体センサ装置、および、その製造方法 |
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US (1) | US7749797B2 (ja) |
JP (1) | JP4712042B2 (ja) |
CN (1) | CN100530699C (ja) |
DE (1) | DE102004043663B4 (ja) |
WO (1) | WO2006026951A1 (ja) |
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US20090026558A1 (en) | 2009-01-29 |
DE102004043663B4 (de) | 2006-06-08 |
DE102004043663A1 (de) | 2006-04-06 |
CN100530699C (zh) | 2009-08-19 |
JP2008512647A (ja) | 2008-04-24 |
WO2006026951A1 (de) | 2006-03-16 |
US7749797B2 (en) | 2010-07-06 |
CN101053086A (zh) | 2007-10-10 |
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