JP6266168B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6266168B2 JP6266168B2 JP2017512118A JP2017512118A JP6266168B2 JP 6266168 B2 JP6266168 B2 JP 6266168B2 JP 2017512118 A JP2017512118 A JP 2017512118A JP 2017512118 A JP2017512118 A JP 2017512118A JP 6266168 B2 JP6266168 B2 JP 6266168B2
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- Prior art keywords
- semiconductor device
- mold resin
- lead frame
- resin
- heat dissipation
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- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
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Description
この発明の上記以外の目的、特徴、観点及び効果は、図面を参照する以下のこの発明の詳細な説明から、さらに明らかになるであろう。
以下に、本発明の実施の形態1に係る半導体装置について、図面に基づいて説明する。図1は、本実施の形態1に係る樹脂モールド型の半導体装置の構成を示す断面図、図2は、一回目のトランスファー成形工程後の半導体装置を放熱面側から見た平面図、図3は、二回目のトランスファー成形工程後の半導体装置を放熱面側から見た平面図である。なお、各図において、図中、同一または相当部分には同一符号を付している。
図7は、本発明の実施の形態2に係る半導体装置の構成を示す断面図である。本実施の形態2に係る半導体装置101は、上記実施の形態1に係る半導体装置100の変形例であり、全体的な構成は同じであるため、相違点のみを説明する。
図9は、本発明の実施の形態3に係る半導体装置の構成を示す断面図である。本実施の形態3に係る半導体装置102は、上記実施の形態1に係る半導体装置100の変形例であり、全体的な構成は同じであるため、相違点のみを説明する。
図12は、本発明の実施の形態4に係る半導体装置の構成を示す断面図である。本実施の形態4に係る半導体装置103は、上記実施の形態1に係る半導体装置100の変形例であり、全体的な構成は同じであるため、相違点のみを説明する。
図15は、本発明の実施の形態5に係る半導体装置のリードフレームの表面状態を示す走査電子顕微鏡写真による図である。なお、本実施の形態5に係る半導体装置の全体構成は、上記実施の形態1と同様であるので、各要素の説明を省略する(図1参照)。また、本実施の形態5に係る半導体装置の製造方法は、上記実施の形態1と同様であるので説明を省略する。
図16は、本発明の実施の形態6に係る半導体装置の構成を示す断面図である。本実施の形態6に係る半導体装置104は、上記実施の形態1に係る半導体装置100の変形例であり、全体的な構成は同じであるため、相違点のみを説明する。また、本実施の形態6に係る半導体装置104の製造方法は、上記実施の形態1と同様であるので説明を省略する。
図22は、本発明の実施の形態7に係る半導体装置における二回目のトランスファー成形工程後の薄肉成形部を示す拡大断面図である。なお、本実施の形態7に係る半導体装置の全体構成は、上記実施の形態1と同様であるので、各要素の説明を省略する(図1参照)。また、本実施の形態7に係る半導体装置の製造方法は、上記実施の形態1と同様であるので説明を省略する。
図23は、本発明の実施の形態8に係る半導体装置の薄肉成形部を示す拡大断面図である。なお、本実施の形態8に係る半導体装置の全体構成は、上記実施の形態1と同様であるので、各要素の説明を省略する(図1参照)。また、本実施の形態8に係る半導体装置の製造方法は、上記実施の形態1と同様であるので説明を省略する。
図24は、本発明の実施の形態9に係る半導体装置を示す断面図、図25は、本実施の形態9に係る半導体装置の二回目のトランスファー成形工程を示す断面図である。本実施の形態9に係る半導体装置105は、上記実施の形態1に係る半導体装置100の変形例であり、全体的な構成は同じであるため、相違点のみを説明する。
Claims (19)
- 半導体素子が実装されたリードフレーム、前記リードフレームの前記半導体素子が実装された面である実装面を封止する第一のモールド樹脂、前記リードフレームの前記実装面と反対側の面である放熱面を封止する第二のモールド樹脂を備え、
前記リードフレームの前記放熱面の外周端部には、前記第一のモールド樹脂と前記第二のモールド樹脂により成形された枠状突起が設けられ、
前記枠状突起の対向する二辺と該二辺の間を覆う薄肉成形部は前記第二のモールド樹脂により一体的に成形され、前記枠状突起の他の対向する二辺は前記第一のモールド樹脂により成形されたことを特徴とする半導体装置。 - 前記第二のモールド樹脂は、トランスファー成形工程で用いられた成形金型のゲート内に残った樹脂の痕跡であるゲートブレイク跡を有し、前記枠状突起の前記ゲートブレイク跡に最も近い辺を含む二辺と該二辺の間を覆う前記薄肉成形部が、前記第二のモールド樹脂により成形されたことを特徴とする請求項1記載の半導体装置。
- 前記枠状突起は、その各辺と直交する方向に切断した断面形状が、円弧状の先端部を有することを特徴とする請求項1または請求項2に記載の半導体装置。
- 前記枠状突起は、その各辺と直交する方向に切断した断面形状が矩形であり、その角部が丸みを帯びていることを特徴とする請求項1または請求項2に記載の半導体装置。
- 前記リードフレームの離間された二つの領域の間の少なくとも一部に、前記第一のモールド樹脂が配置され、前記二つの領域の間に配置された前記第一のモールド樹脂は、前記第二のモールド樹脂との接合面に凹部を有することを特徴とする請求項1から請求項4のいずれか一項に記載の半導体装置。
- 前記リードフレームの離間された二つの領域の間の少なくとも一部に、前記第二のモールド樹脂により成形されたリードフレーム間充填部が配置されることを特徴とする請求項1から請求項5のいずれか一項に記載の半導体装置。
- 前記リードフレーム間充填部が配置された前記リードフレームの側面の一部に、カエリを有することを特徴とする請求項6記載の半導体装置。
- 前記リードフレーム間充填部は、前記第一のモールド樹脂との接合部に凹部を有することを特徴とする請求項6記載の半導体装置。
- 前記リードフレームの離間された二つの領域を跨ぐように前記実装面にブリッジ実装された電子部品を備え、前記電子部品の直下に相当する前記第二のモールド樹脂に窪みが設けられ、前記窪みに前記第一のモールド樹脂が充填されたことを特徴とする請求項1から請求項8のいずれか一項に記載の半導体装置。
- 前記リードフレームとして、表面が粗化された金属めっきにより被膜された粗化金属めっきリードフレームを用いたことを特徴とする請求項1から請求項9のいずれか一項に記載の半導体装置。
- 前記リードフレームは、金属めっきにより被膜され、前記金属めっきの表面形状を鱗状に変形させた鱗状部を有することを特徴とする請求項1から請求項10のいずれか一項に記載の半導体装置。
- 前記第一のモールド樹脂は、トランスファー成形工程で用いられた成形金型のゲート内に残った樹脂の痕跡であるゲートブレイク跡を有し、前記鱗状部は、前記リードフレームの前記実装面の前記ゲートブレイク跡に近接する箇所に配置されることを特徴とする請求項11記載の半導体装置。
- 前記第二のモールド樹脂は、トランスファー成形工程で用いられた成形金型のゲート内に残った樹脂の痕跡であるゲートブレイク跡を有し、前記鱗状部は、前記リードフレームの前記放熱面の前記ゲートブレイク跡に近接する箇所に配置されることを特徴とする請求項11または請求項12に記載の半導体装置。
- 前記鱗状部は、前記リードフレームの前記実装面及び前記放熱面のいずれか一方または両方の外周部に配置されることを特徴とする請求項11から請求項13のいずれか一項に記載の半導体装置。
- 前記第二のモールド樹脂には、前記第一のモールド樹脂よりも熱伝導率が高い高放熱樹脂が用いられることを特徴とする請求項1から請求項14のいずれか一項に記載の半導体装置。
- 前記第一のモールド樹脂及び前記第二のモールド樹脂には、熱伝導率が3W/m・K〜12W/m・Kの高放熱樹脂が用いられることを特徴とする請求項1から請求項14のいずれか一項に記載の半導体装置。
- 前記第二のモールド樹脂は、最大径が0.02mm〜0.15mmのフィラーを含有し、前記薄肉成形部の厚さは、0.022mm〜0.3mmであることを特徴とする請求項1から請求項16のいずれか一項に記載の半導体装置。
- 前記薄肉成形部は、表面のスキン層が除去されていることを特徴とする請求項1から請求項17のいずれか一項に記載の半導体装置。
- 前記リードフレームの前記放熱面を覆う前記薄肉成形部に、ヒートシンクが直接接合されたことを特徴とする請求項1から請求項18のいずれか一項に記載の半導体装置。
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