JPS61192452U - - Google Patents
Info
- Publication number
- JPS61192452U JPS61192452U JP1985076880U JP7688085U JPS61192452U JP S61192452 U JPS61192452 U JP S61192452U JP 1985076880 U JP1985076880 U JP 1985076880U JP 7688085 U JP7688085 U JP 7688085U JP S61192452 U JPS61192452 U JP S61192452U
- Authority
- JP
- Japan
- Prior art keywords
- plastic
- package
- sealed semiconductor
- semiconductor device
- recess
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000011347 resin Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
第１図はパツケージの長手方向に横断面台形状
の凹部を形成したプラスチツク封止型半導体素子
の斜視図、第２図はその断面図、第３図及び第５
図はパツケージの長手方向に横断面円弧状の凹部
を設けたプラスチツク封止型半導体素子の斜視図
、第４図は、第３図の―線断面図、第６図及
び第７図はパツケージの片面に四方を壁で取囲ま
れた凹部を形成したプラスチツク封止型半導体素
子の斜視図、第８図は、第６図において、その凹
部の四角部にアールを形成した場合を示す斜視図
、第９図は、平面視円形の凹部において、その横
断面が円弧状のプラスチツク封止型半導体素子の
斜視図、第１０図は、円柱状の凹部を形成したプ
ラスチツク封止型半導体素子の斜視図、第１１図
及び第１２図は従来のプラスチツク封止型半導体
素子の断面図である。 １…プラスチツク封止型半導体素子、１′…パ
ツケージ、Ｔ１，Ｔ２…モールド樹脂層の厚み、
１０…凹部、１０′…周壁。
の凹部を形成したプラスチツク封止型半導体素子
の斜視図、第２図はその断面図、第３図及び第５
図はパツケージの長手方向に横断面円弧状の凹部
を設けたプラスチツク封止型半導体素子の斜視図
、第４図は、第３図の―線断面図、第６図及
び第７図はパツケージの片面に四方を壁で取囲ま
れた凹部を形成したプラスチツク封止型半導体素
子の斜視図、第８図は、第６図において、その凹
部の四角部にアールを形成した場合を示す斜視図
、第９図は、平面視円形の凹部において、その横
断面が円弧状のプラスチツク封止型半導体素子の
斜視図、第１０図は、円柱状の凹部を形成したプ
ラスチツク封止型半導体素子の斜視図、第１１図
及び第１２図は従来のプラスチツク封止型半導体
素子の断面図である。 １…プラスチツク封止型半導体素子、１′…パ
ツケージ、Ｔ１，Ｔ２…モールド樹脂層の厚み、
１０…凹部、１０′…周壁。
Claims (1)
- 【実用新案登録請求の範囲】 (1) 半導体チツプ等を内蔵し、パツケージの少
なくとも１側部から複数のリードフレームを取出
したプラスチツク封止型の半導体素子において、
当該パツケージの片面には、モールド樹脂層に発
生する応力を吸収する凹部を設けたことを特徴と
するプラスチツク封止型半導体素子。 (2) 上記凹部が、パツケージの長手方向に平行
で、しかも、溝状に形成されていることを特徴と
する実用新案登録請求の範囲第１項記載のプラス
チツク封止型半導体素子。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985076880U JPS61192452U (ja) | 1985-05-22 | 1985-05-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985076880U JPS61192452U (ja) | 1985-05-22 | 1985-05-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61192452U true JPS61192452U (ja) | 1986-11-29 |
Family
ID=30619424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1985076880U Pending JPS61192452U (ja) | 1985-05-22 | 1985-05-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61192452U (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63152157A (ja) * | 1986-12-16 | 1988-06-24 | Toyota Motor Corp | 可塑性樹脂コ−テイング用ｉｃパツケ−ジ |
| WO2016166834A1 (ja) * | 2015-04-15 | 2016-10-20 | 三菱電機株式会社 | 半導体装置 |
-
1985
- 1985-05-22 JP JP1985076880U patent/JPS61192452U/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63152157A (ja) * | 1986-12-16 | 1988-06-24 | Toyota Motor Corp | 可塑性樹脂コ−テイング用ｉｃパツケ−ジ |
| WO2016166834A1 (ja) * | 2015-04-15 | 2016-10-20 | 三菱電機株式会社 | 半導体装置 |
| JPWO2016166834A1 (ja) * | 2015-04-15 | 2017-07-13 | 三菱電機株式会社 | 半導体装置 |