JP6877561B2 - 半導体装置およびこれを備えた電力変換装置 - Google Patents
半導体装置およびこれを備えた電力変換装置 Download PDFInfo
- Publication number
- JP6877561B2 JP6877561B2 JP2019542882A JP2019542882A JP6877561B2 JP 6877561 B2 JP6877561 B2 JP 6877561B2 JP 2019542882 A JP2019542882 A JP 2019542882A JP 2019542882 A JP2019542882 A JP 2019542882A JP 6877561 B2 JP6877561 B2 JP 6877561B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor device
- thin
- inner lead
- mounting surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 121
- 238000006243 chemical reaction Methods 0.000 title claims description 6
- 229920005989 resin Polymers 0.000 claims description 155
- 239000011347 resin Substances 0.000 claims description 155
- 238000007789 sealing Methods 0.000 claims description 32
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 238000000465 moulding Methods 0.000 description 55
- 238000001721 transfer moulding Methods 0.000 description 44
- 230000017525 heat dissipation Effects 0.000 description 35
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 8
- 238000009413 insulation Methods 0.000 description 6
- 238000000748 compression moulding Methods 0.000 description 5
- 239000004519 grease Substances 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 235000014676 Phragmites communis Nutrition 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000007788 roughening Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49534—Multi-layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02K—DYNAMO-ELECTRIC MACHINES
- H02K11/00—Structural association of dynamo-electric machines with electric components or with devices for shielding, monitoring or protection
- H02K11/30—Structural association with control circuits or drive circuits
- H02K11/33—Drive circuits, e.g. power electronics
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73221—Strap and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/49524—Additional leads the additional leads being a tape carrier or flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
Description
この発明の上記以外の目的、特徴、観点および効果は、図面を参照する以下のこの発明の詳細な説明から、さらに明らかになるであろう。
以下に、本発明の実施の形態1に係る半導体装置について、図面に基づいて説明する。図1は、本実施の形態1に係る樹脂モールド型の半導体装置の構成を示す断面図、図2は、一回目のトランスファー成形工程後の半導体装置を示す断面図、図3は、一回目のトランスファー成形工程後の半導体装置を放熱面側から見た平面図、図4は、二回目のトランスファー成形工程後の半導体装置を放熱面側から見た平面図である。なお、各図において、図中、同一または相当部分には同一符号を付している。
図11は、本発明の実施の形態2に係る半導体装置の構成を示す断面図である。また、図12は、一回目のトランスファー成形工程後の半導体装置を実装面側から見た平面図、図13は、一回目の成形工程後、インナーリードを露出させた半導体装置を実装面側から見た平面図、図14は、二回目のトランスファー成形工程後の半導体装置を実装面側から見た平面図である。
図15は、本発明の実施の形態3に係る半導体装置を示す断面図、図16は、二回目のトランスファー成形工程後の半導体装置を放熱面側から見た平面図である。なお、図15は、図16中B−Bで示す位置における断面図である。
図17は、本発明の実施の形態4に係る半導体装置に用いられる表面粗化インナーリードの表面状態を示す断面図である。なお、本実施の形態4に係る半導体装置の全体構成および製造方法は、上記実施の形態1と同様であるので、ここでは説明を省略する。
図18は、本発明の実施の形態5におけるレーザー粗化インナーリードの鱗状部を示す平面図、図19は、図18中、C−Cで示す部分の断面の上面斜視図である。なお、本実施の形態5に係る半導体装置の全体構成および製造方法は、上記実施の形態1と同様であるので、ここでは説明を省略する。
図20は、本発明の実施の形態6に係る半導体装置を示す断面図、図21は、本実施の形態6に係る半導体装置の二回目のトランスファー成形工程を示す断面図である。本実施の形態6に係る半導体装置103は、放熱面放熱板51aおよび実装面放熱板51bが、放熱グリース等を介さずに、それぞれ第一の薄肉成形部8b、第二の薄肉成形部8cと直に接合されたものである。それ以外の構成については上記実施の形態1に係る半導体装置100と同様であるので、ここでは説明を省略する。
Claims (11)
- 半導体素子が実装されたリードフレーム、前記半導体素子の電極に接続されたインナーリード、前記リードフレームの一部と前記半導体素子と前記インナーリードとを封止している第一の樹脂および第二の樹脂を備えた半導体装置であって、
前記リードフレームの前記半導体素子が実装された側の面を実装面、前記実装面と反対側の面を放熱面とするとき、
前記放熱面の外周端部には枠状突起が設けられ、前記枠状突起の対向する二辺と該二辺の間を覆う第一の薄肉成形部は前記第二の樹脂により一体的に成形され、前記枠状突起の他の対向する二辺は前記第一の樹脂により成形されるとともに前記第二の樹脂で覆われており、
前記実装面には、前記インナーリードの一部と前記半導体素子とを覆う素子封止部が前記第一の樹脂により成形され、前記素子封止部の表面の一部と前記素子封止部から露出している前記インナーリードとを覆う第二の薄肉成形部が前記第二の樹脂により成形されていることを特徴とする半導体装置。 - 前記素子封止部は前記実装面と平行な平面を有し、前記平面の外周端部に実装面側枠状突起が設けられ、前記実装面側枠状突起の対向する二辺と該二辺の間を覆う前記第二の薄肉成形部は前記第二の樹脂により一体的に成形され、前記実装面側枠状突起の他の対向する二辺は前記第一の樹脂により成形されていることを特徴とする請求項1に記載の半導体装置。
- 前記第一の樹脂により成形されている前記実装面側枠状突起の二辺は、前記第二の樹脂で覆われていることを特徴とする請求項2記載の半導体装置。
- 前記素子封止部は前記実装面と平行な平面を有すると共に、前記インナーリードは前記平面に平行な端面を有しており、前記平面と前記端面は、前記実装面からの高さが等しいことを特徴とする請求項1から請求項3のいずれか一項に記載の半導体装置。
-
前記第二の薄肉成形部は、前記素子封止部の前記平面および前記平面から露出している前記インナーリードの前記端面を覆っていることを特徴とする請求項4記載の半導体装置。 - 前記インナーリードは、表面が粗化されていることを特徴とする請求項1から請求項5のいずれか一項に記載の半導体装置。
- 前記インナーリードは、鱗片状の突起が連続的に配置された鱗状部を有することを特徴とする請求項1から請求項5のいずれか一項に記載の半導体装置。
- 前記第二の樹脂は、前記第一の樹脂よりも熱伝導率が高い高放熱樹脂であることを特徴とする請求項1から請求項7のいずれか一項に記載の半導体装置。
- 前記第一の薄肉成形部および前記第二の薄肉成形部と直に接合されている放熱板を備えたことを特徴とする請求項1から請求項8のいずれか一項に記載の半導体装置。
- 請求項1から請求項8のいずれか一項に記載の半導体装置を1つ以上備えたインバータと、モータとを含む電力変換装置であって、
前記半導体装置の前記第一の薄肉成形部および前記第二の薄肉成形部に放熱板が配置され、各々の前記放熱板は、前記インバータまたは前記モータの筐体の一部であることを特徴とする電力変換装置。 - 請求項1から請求項8のいずれか一項に記載の半導体装置を1つ以上備えたインバータと、モータとを含む電力変換装置であって、
前記半導体装置の前記第一の薄肉成形部および前記第二の薄肉成形部に放熱板が配置され、各々の前記放熱板は、前記インバータまたは前記モータの筐体に接合されていることを特徴とする電力変換装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2017/034019 WO2019058473A1 (ja) | 2017-09-21 | 2017-09-21 | 半導体装置およびこれを備えた電力変換装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2019058473A1 JPWO2019058473A1 (ja) | 2020-03-26 |
JP6877561B2 true JP6877561B2 (ja) | 2021-05-26 |
Family
ID=65810160
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019542882A Active JP6877561B2 (ja) | 2017-09-21 | 2017-09-21 | 半導体装置およびこれを備えた電力変換装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11302597B2 (ja) |
EP (1) | EP3686925B1 (ja) |
JP (1) | JP6877561B2 (ja) |
CN (1) | CN111095537B (ja) |
WO (1) | WO2019058473A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7090716B2 (ja) * | 2018-09-06 | 2022-06-24 | 三菱電機株式会社 | 半導体装置 |
CN114868327A (zh) * | 2019-12-23 | 2022-08-05 | 三菱电机株式会社 | 电力转换装置 |
JP2022144247A (ja) * | 2021-03-18 | 2022-10-03 | 株式会社デンソー | 半導体モジュール、および、これを用いた電子装置 |
US20230354525A1 (en) * | 2021-05-06 | 2023-11-02 | Innoscience (Suzhou) Technology Co., Ltd. | Nitride-based semiconductor module and method for manufacturing the same |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5946962B2 (ja) * | 1981-06-11 | 1984-11-16 | 徳山積水工業株式会社 | 塩素化塩化ビニル樹脂の製造方法 |
US5041902A (en) * | 1989-12-14 | 1991-08-20 | Motorola, Inc. | Molded electronic package with compression structures |
JP3516789B2 (ja) * | 1995-11-15 | 2004-04-05 | 三菱電機株式会社 | 半導体パワーモジュール |
JP5415823B2 (ja) * | 2008-05-16 | 2014-02-12 | 株式会社デンソー | 電子回路装置及びその製造方法 |
TWI525767B (zh) * | 2011-04-04 | 2016-03-11 | Rohm Co Ltd | Semiconductor device and method for manufacturing semiconductor device |
JP6028592B2 (ja) * | 2013-01-25 | 2016-11-16 | 三菱電機株式会社 | 半導体装置 |
JP6115738B2 (ja) * | 2013-02-05 | 2017-04-19 | パナソニックIpマネジメント株式会社 | 半導体装置およびその製造方法 |
WO2014188803A1 (ja) | 2013-05-21 | 2014-11-27 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
DE102013220880B4 (de) * | 2013-10-15 | 2016-08-18 | Infineon Technologies Ag | Elektronisches Halbleitergehäuse mit einer elektrisch isolierenden, thermischen Schnittstellenstruktur auf einer Diskontinuität einer Verkapselungsstruktur sowie ein Herstellungsverfahren dafür und eine elektronische Anordung dies aufweisend |
KR20150048459A (ko) | 2013-10-28 | 2015-05-07 | 삼성전기주식회사 | 전력 모듈 패키지 |
JP6407756B2 (ja) * | 2014-03-31 | 2018-10-17 | 株式会社東芝 | 半導体モジュールの製造方法 |
CN105518854B (zh) * | 2014-03-31 | 2018-09-25 | 富士电机株式会社 | 电力变换装置 |
KR20160038440A (ko) | 2014-09-30 | 2016-04-07 | 삼성전기주식회사 | 전력 모듈 패키지와 이의 제작방법 |
JP6266168B2 (ja) | 2015-04-15 | 2018-01-24 | 三菱電機株式会社 | 半導体装置 |
WO2016166835A1 (ja) | 2015-04-15 | 2016-10-20 | 三菱電機株式会社 | 半導体装置 |
-
2017
- 2017-09-21 CN CN201780094899.XA patent/CN111095537B/zh active Active
- 2017-09-21 WO PCT/JP2017/034019 patent/WO2019058473A1/ja unknown
- 2017-09-21 EP EP17925881.9A patent/EP3686925B1/en active Active
- 2017-09-21 JP JP2019542882A patent/JP6877561B2/ja active Active
- 2017-09-21 US US16/617,233 patent/US11302597B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20210125891A1 (en) | 2021-04-29 |
JPWO2019058473A1 (ja) | 2020-03-26 |
EP3686925B1 (en) | 2021-08-04 |
EP3686925A1 (en) | 2020-07-29 |
CN111095537B (zh) | 2024-03-29 |
CN111095537A (zh) | 2020-05-01 |
WO2019058473A1 (ja) | 2019-03-28 |
EP3686925A4 (en) | 2020-07-29 |
US11302597B2 (en) | 2022-04-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6266168B2 (ja) | 半導体装置 | |
JP6877561B2 (ja) | 半導体装置およびこれを備えた電力変換装置 | |
US9236324B2 (en) | Electric power semiconductor device and method for producing same | |
TWI404177B (zh) | 功率半導體電路裝置及其製造方法 | |
US9171773B2 (en) | Semiconductor device | |
US11631623B2 (en) | Power semiconductor device and method of manufacturing the same, and power conversion device | |
US9754855B2 (en) | Semiconductor module having an embedded metal heat dissipation plate | |
JP6345342B2 (ja) | 半導体装置 | |
JP2003007966A (ja) | 半導体装置 | |
JP2005109100A (ja) | 半導体装置およびその製造方法 | |
JP2003124437A (ja) | 半導体装置 | |
US10777476B2 (en) | Semiconductor device | |
JP5285347B2 (ja) | 回路装置 | |
JP2003273319A (ja) | 両面電極半導体素子を有する電子回路装置及び該電子回路装置の製造方法 | |
JP6663485B2 (ja) | パワー半導体モジュール、それを用いた電力変換装置及び電力変換装置の製造方法 | |
JP6575739B1 (ja) | 半導体装置、半導体装置の製造方法および電力変換装置 | |
WO2012046578A1 (ja) | 半導体装置及び半導体装置の生産方法 | |
JP6797002B2 (ja) | 半導体装置および半導体装置の製造方法 | |
US11152275B2 (en) | Semiconductor device and method for manufacturing semiconductor device | |
JP2003218291A (ja) | 半導体装置およびその製造方法 | |
JP2017191807A (ja) | パワー半導体装置およびパワー半導体装置の製造方法 | |
US11462504B2 (en) | Semiconductor apparatus | |
JP2009277959A (ja) | 半導体装置及びその製造方法 | |
JP2024006808A (ja) | 電気回路体および電力変換装置 | |
JP2024006810A (ja) | 電気回路体および電力変換装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20191114 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210119 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210215 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210406 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210427 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 6877561 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE Ref document number: 6877561 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |