CN105518854B - 电力变换装置 - Google Patents

电力变换装置 Download PDF

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Publication number
CN105518854B
CN105518854B CN201580001827.7A CN201580001827A CN105518854B CN 105518854 B CN105518854 B CN 105518854B CN 201580001827 A CN201580001827 A CN 201580001827A CN 105518854 B CN105518854 B CN 105518854B
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metal shell
power
insulating layer
power semiconductor
thermal diffusivity
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CN105518854A (zh
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冈本健次
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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Abstract

本发明提供一种散热性优良，并且能够应对电力变换装置的小型化以及低成本的所述要求的电力变换装置，其特征在于，具备：印刷布线板(5)，其设置在散热用的热沉(6)上，具有贯通孔(11)且具备布线；金属壳体(2)，其具有嵌入到所述贯通孔(11)的凹部(7)，所述凹部(7)隔着由陶瓷材料构成的散热性绝缘层(4)安装在所述热沉(6)上；和功率半导体元件(3)，其安装在所述凹部内，与所述印刷布线板(5)的布线电连接。

Description

电力变换装置
技术领域
本发明涉及变换器(inverter)、伺服控制器(servo controller)、UPS等使用了功率半导体元件的电力变换装置。
背景技术
由功率半导体等构成的电力变换装置从家用空调、冰箱等民用设备到变换器、伺服控制器等工业用设备，在跨越大范围的领域中普及应用。
从消耗电力的方面考虑，功率半导体被安装于金属基底基板和/或陶瓷基板等布线板。通过在该布线板安装功率半导体等一个或多个电路元件，粘接塑料壳体框，并由硅凝胶和/或环氧树脂等进行密封，从而构成功率半导体模块。
另一方面，为了降低制造成本，也有根据传递成型法制造的实型功率半导体模块(例如，参见专利文献1)。
通常，电力变换装置将上述所记载的功率半导体模块用于主电路，并另外构成有电源电路和/或控制用电路。电源电路和/或控制用电路由IC、LSI、电阻、电容、电感等各种部件构成，通常安装于印刷布线板。
图6是示出以往的电力变换装置的结构的一例的截面图。如图6所示，为了提高散热性，功率半导体模块30借由散热润滑脂安装在热沉31上。然后，安装有电子电路部件的印刷布线板32和印刷布线板33被配置于功率半导体模块30的上方，各印刷布线板32、33由销34等接合。然后，如图6所示，从印刷布线板32的上方直到各印刷布线板32、33和功率半导体模块30的侧方由罩35覆盖。
图6所示的功率半导体模块30构成为具有：绝缘基板36、功率半导体元件37、引线38、壳主体39和盖40。如图6所示，功率半导体元件37安装在绝缘基板36上。绝缘基板36，例如是在金属基底41的表面形成有绝缘层42，在绝缘层42的表面形成有电路图案43的结构。绝缘层42例如是将由含有无机填充物的环氧树脂固化而形成的。
如图6所示，功率半导体元件37将其背面电极接合在绝缘基板36的电路图案上。另外，功率半导体元件37将其正面电极在与电路图案43之间经由引线38电连接。并且，连接导线端子45、46通过钎焊而接合到电路图案43。
因此，功率半导体模块30和各印刷布线板32、33经由连接导线端子45、46而电连接。
现有技术文献
专利文献
专利文献1：日本特开平9-139461号公报
发明内容
然而，在图6所示的以往的电力变换装置的结构中，具有功率半导体元件37发出的热不能高效地放出至热沉31的问题。
即，如图6所示，功率半导体元件37被安装于绝缘基板36，到热沉31为止多个材料层存在于其间，另外，功率半导体元件37与热沉31之间的距离也远。因此，功率半导体元件37与热沉31之间存在大小不能忽视的一定的热阻，冷却特性有可能不充分，由功率半导体元件37产生的热不能充分地放出。
另外，如图6所示，由于功率半导体模块30为一个成品，因此为了将功率半导体模块30配置在电力变换装置内而需要一定体积，妨碍了小型化。并且，如图6所示，由于是在功率半导体模块30的上方层叠印刷布线板32、33的结构，因此不能实现电力变换装置的低背化。
另外，还具有以下问题：将作为产品的功率半导体模块30组装到电力变换装置，因此妨碍成本的降低，并且，在图6的电力变换装置的结构中，部件个数多，因此成本越发增大。另外，在图6的电力变换装置的结构中，还具有组装复杂化的问题。
本发明是鉴于上述那样的问题而做出的，其目的在于，提供一种散热性优良，并且能够应对电力变换装置的小型化以及低成本的上述要求的电力变换装置。
在本发明中，与以往相比，能够降低功率半导体元件与热沉之间的热阻，如此，若使热阻降低，则能够降低电力变换装置运转时的功率半导体元件的温度，其结果，能够减小功率半导体元件的芯片尺寸，并能够相应地降低成本。
并且，在本发明中，不使用如以往那样作为成品的功率半导体模块，而通过将具备功率半导体元件的单元嵌入到印刷布线板，从而能够有效地促进小型化、低背化以及低成本化。具体而言，本发明如以下所示。
本发明的电力变换装置的特征在于，具备：印刷布线板，其设置在散热用的热沉上，具有贯通孔且具备布线；金属壳体，其具有嵌入到所述贯通孔的凹部，所述凹部隔着由陶瓷材料构成的散热性绝缘层安装在所述热沉上；和功率半导体元件，其安装在所述凹部内，与所述印刷布线板的布线电连接。
根据本发明，在热容量高且散热性好的金属壳体的凹部安装功率半导体元件，另外，将金属壳体的凹部隔着导热性方面优良的由陶瓷材料构成的散热性绝缘层安装到热沉上。据此，能够减少功率半导体元件的下部的热阻，能够提高散热性。因此，作为功率半导体元件，能够采用成本更低、面积更小的功率半导体元件。
另外，在本发明中，是将安装有功率半导体元件的金属壳体嵌入到安装有电路元件的印刷布线板的贯通孔而安装于热沉的结构，因此不需要如以往那样仅将功率半导体模块的主电路部收纳到单独的壳体，与在印刷布线板5所安装的电路元件之间的电连接也变得容易。电力变换装置的体积与以往相比能够有效地减小。
在本发明中，作为功率半导体元件的安装用部件而使用了金属壳体。若为金属壳体，则可以通过压力而进行冲裁，因此能够利用拉伸加工而形成，能够使金属壳体的制造变得容易。而且，由于是箱状，金属壳体能够从印刷布线板的上表面侧简单地嵌入到贯通孔11，在嵌入后的状态下将两者间通过粘接剂和/或钎焊进行接合而简单且适当地进行一体化。
另外，由于将功率半导体元件安装于金属壳体的凹部，因此成为功率半导体元件的周围被金属壳体的侧壁部包围的状态，能够提高针对功率半导体元件的保护功能。另外，通过将功率半导体元件安装到金属壳体的凹部，从而将金属壳体嵌入到印刷布线板的贯通孔，由此能够将功率半导体元件配置于印刷布线板的板厚内。因此，能够有效地缩短功率半导体元件与热沉之间的距离。
根据以上，在本发明中，安装有功率半导体元件的金属壳体隔着由陶瓷材料构成的散热性绝缘层被安装于热沉，因此，能够获得散热性比以往优良的电力变换装置。并且，在本发明中，作为功率半导体元件，能够采用成本更低，面积更小的功率半导体元件，并且通过将金属壳体嵌入到印刷布线板的贯通孔，以及与之相应的电连接构造的简化等，从而能够实现小型化、低背化，并且能够实现成本的降低。
在上述电力变换装置中，优选为上述金属壳体具有：所述凹部，其由底部和侧壁部包围而成；和凸缘部，其设置在所述侧壁部的上端，朝向侧壁部外侧延长而伸出。在本发明中，凸缘部能够作为将金属壳体插入到贯通孔时的挡块发挥功能。
另外，在上述电力变换装置中，优选为上述凸缘部与设置于上述印刷布线板的上表面的金属箔图案对置，对上述凸缘部和上述金属箔图案进行钎焊。据此，能够简单且可靠地将金属壳体与印刷布线板形成为一体。
另外，在上述电力变换装置中，优选为上述散热性绝缘层的热传导率为1～300W/m·K，厚度为10～500μm。据此，能够更有效地减小功率半导体元件的下部的热阻，能够提高散热性。
另外，在上述电力变换装置中，优选为上述散热性绝缘层由选自氧化硅、氧化铝、氮化硅、氮化铝以及氮化硼的填充物群组中一种以上形成。这些均是散热性优良的陶瓷材料，通过将选自这些材料地陶瓷材料用作散热性绝缘层，从而能够更有效地减少功率半导体元件的下部的热阻，能够提高散热性。
另外，在上述电力变换装置中，优选为上述散热性绝缘层是将一种以上的陶瓷粒子利用等离子喷镀法进行堆积而形成，或者上述散热性绝缘层是将一种以上的陶瓷粒子利用气溶胶沉积法进行堆积而形成。据此，能够更有效地实现绝缘耐压升高以及热阻的降低。
根据本发明，由于将安装有功率半导体元件的金属壳体隔着由陶瓷材料构成的散热性绝缘层安装于热沉，因此能够获得散热性比以往优良的电力变换装置。并且，在本发明中，作为功率半导体元件能够采用成本更低、面积更小的功率半导体元件，并且通过将金属壳体嵌入到印刷布线板的贯通孔，随之而来的电连接构造的简化等，从而能够实现小型化、低背化，并且能够实现成本的降低。
附图说明
图1是示出第一实施方式的电力变换装置的结构的截面图。
图2A～图2E是示出第一实施方式的电力变换装置的制造方法的截面图。
图3A～图3C是示出继图2A～图2E之后进行的第一实施方式的电力变换装置的制造方法的截面图。
图4是示出第二实施方式的电力变换装置的结构的截面图。
图5是示出第三实施方式的电力变换装置的结构的截面图。
图6是示出以往的电力变换装置的结构的一例的截面图。
具体实施方式
以下，参照附图来详细说明本发明的实施方式。图1是示出第一实施方式的电力变换装置的结构的截面图。
如图1所示，第一实施方式的电力变换装置1具备：在散热用的热沉6上设置的、具有贯通孔11并具备布线的印刷布线板5；具有嵌入到贯通孔11的凹部7，且凹部7隔着由陶瓷材料构成的散热性绝缘层4而安装在热沉6上的金属壳体2；和安装在凹部7内，与印刷布线板5的布线电连接的功率半导体元件3。以下，对各部件进行详细地说明。
如图1所示，金属壳体2的构成为：具有上表面2a和下表面2b，在上表面2a设置有向下方凹陷的凹部7。凹部7是由底部7a和包围其周围的侧壁部7b构成的有底空间。另外，在金属壳体2设置有从凹部7的侧壁部7b的上端向侧壁部外侧延伸的凸缘部8。凸缘部8可以遍及侧壁部7b的整周而形成，也可以仅在一部分形成。
图1所示的金属壳体2从底部7a直到侧壁部7b以及凸缘部8为止以大致固定的板厚形成。板厚例如为0.5～2.0mm程度，但对板厚没有特别地限定。另外，金属壳体2可以由铜板、铜合金板、铝板、铝合金板等形成。
在本实施方式中，可以通过冲压加工来成型在中心部具有向下方凹陷的凹部7的金属壳体2。凹部7的平面形状(从正上方观察到的形状)为正方形、长方形、圆形等，对形状并没有特别地限定。这里，示出将凹部7设置为正方形的例子。
如此，金属壳体2由导电性和导热性良好的金属材料形成，且将其厚度减薄为0.5～2.0mm程度，从而成为热容量高且散热性优良的结构。
如图1所示，例如，IGBT(Insulated Gate Bipolar Transistor：绝缘栅型双极晶体管)、MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor：金属氧化物半导体场效应晶体管)和/或功率晶体管等功率半导体元件3安装于金属壳体2的底部7a的上表面。例如，功率半导体元件3能够利用钎焊接合于金属壳体2。另外，安装的功率半导体元件3的个数可以为两个以上。
如图1所示，在金属壳体2的下表面2b直接形成有散热性绝缘层4。如图1所示，散热性绝缘层4从凹部7的底部7a的下表面(背面)直到侧壁部7b的外侧面以及凸缘部8的下表面(背面)的一部分连续(作为一体)而形成。
散热性绝缘层4由热传导率方面优良的陶瓷材料形成。即，例如，与将无机填充物通过树脂固化而形成的绝缘层等相比，通过由陶瓷材料形成散热性绝缘层4，能够有效地提高散热性。
散热性绝缘层4可以形成于金属壳体2的整个下表面(背面)2b。另外，散热性绝缘层4至少也可以仅形成于金属壳体2的凹部7的底部7a的下表面(背面)。
散热性绝缘层4的厚度优选为10～500μm程度。据此，能够提高散热性绝缘层4的绝缘耐压，并且能够将热阻抑制得较低。
就散热性绝缘层4而言，热传导率优选为1～300W/m·K，厚度优选为10～500μm。据此，在图1的电力变换装置1中，能够有效地减少功率半导体元件3的下部的热阻。
另外，散热性绝缘层4优选由选自氧化硅、氧化铝、氮化硅、氮化铝和氮化硼的填充物群中的一种以上形成。这些均是导热性方面优良的陶瓷材料。因此，通过将选自这些填充物群的一种以上的陶瓷材料用作散热性绝缘层4，从而能够更有效地减少功率半导体元件3的下部的热阻。
印刷布线板5构成为：在由例如玻璃环氧树脂(利用玻璃纤维进行了强化的环氧树脂)构成的电绝缘性的基板主体9形成有由例如铜箔构成的电路图案10。
如图1所示，在印刷布线板5形成有从上表面5a直到下表面5b贯通的贯通孔11。贯通孔11的大小以及形状配合金属壳体2的侧壁部7b的外部形状而确定。
如图1所示，金属壳体2被嵌入到设置于印刷布线板5的贯通孔11。
在图1中，从金属壳体2的底部7a的下表面至凸缘部8的下表面为止的高度H1与印刷布线板5的厚度H2大致相同。据此，当金属壳体2的凹部7插入贯通孔11内时，能够使金属壳体2的底部7a的下表面(实际上，由于散热性绝缘层4存在，因此是散热性绝缘层4的下表面)与印刷布线板5的下表面大致在同一平面齐平。另外，如图1所示，在金属壳体2设置有凸缘部8，能够使该凸缘部8作为将金属壳体2插入到印刷布线板5的贯通孔11时的挡块发挥功能。即，若凸缘部8与印刷布线板5的上表面抵接，则能够判断为金属壳体2向贯通孔11内的插入停止，能够将金属壳体2适当地嵌入印刷布线板5的贯通孔11内。
如图1所示，在印刷布线板5的上表面5a，与凸缘部8对置的部分设置有铜箔图案10a。因此，通过将金属壳体2嵌入到印刷布线板5的贯通孔11，从而能够使凸缘部8和铜箔图案10a抵接。然后，通过对凸缘部8和铜箔图案10a进行钎焊，从而能够简单且适当地将金属壳体2与印刷布线板5一体化。在此，在本实施方式中，虽然作为金属箔图案而使用铜箔图案，但也可以是铜箔以外的金属箔图案。
另外，在印刷布线板5的上表面5a，在与凸缘部8对置的位置也可以不形成铜箔图案10a。该情况下，凸缘部8与印刷布线板5能够通过粘接剂来结合。另外，金属壳体2的凹部7的底部7a与印刷布线板5之间也可以通过粘接剂等进行接合。然而，如上所述，通过金属壳体2与铜箔图案10a之间的钎焊，从而能够简单且可靠地将金属壳体2与印刷布线板5一体化。
如图1所示，在印刷布线板5的电路图案10上安装有多个电路元件12a、12b、12c。电路元件12a、12b、12c是IC、LSI、电阻、电容、电感等各种部件。
图1所示的功率半导体元件3构成主电路，电路元件12a、12b、12c构成电源电路和/或控制用电路。
并且，如图1所示，由功率半导体元件3和印刷布线板5的电路图案10形成电路，因此功率半导体元件3与电路图案10之间通过铝线13连接，据此，能够将功率半导体元件3与各电路元件12a、12b、12c电连接。铝线13也可以是引线框等。
如图1所示，金属壳体2和印刷布线板5直接安装于热沉6的上表面6a。“直接安装”是指没有粘接剂等接合构件以外的构件存在于其间。
热沉6，例如由铜、铜合金、铝、铝合金等形成，但对材质并没有特别的限定。
如图1所示，热沉6的上表面6a形成为大致平面状，在下表面侧(背面侧)形成有由多个突起形状构成的冷却翅片6b。
根据图1所示的构成，安装有功率半导体元件3的金属壳体2的凹部7的底部7a下表面成为隔着散热性绝缘层4抵接到热沉6的上表面6a的状态。抵接虽然是指直接接触，但是散热润滑脂(接合构件)存在于散热性绝缘层4与热沉6之间的形态也属于“抵接”。即，从热沉6的上表面6a开始依次重叠散热润滑脂、散热性绝缘层4以及金属壳体2的结构成为金属壳体2隔着散热性绝缘层4而抵接到热沉6的形态。
通过使散热性绝缘层4存在于金属壳体2与热沉6之间，从而能够确保金属壳体2与热沉6之间的电绝缘性。
如图1所示，在电力变换装置1中，在热沉6的上表面6a侧安装有罩14。据此，功率半导体元件3的上方以及印刷布线板5的上方和侧方处于由罩14覆盖的状态。
如图1所示，在热容量高且散热性好的金属壳体2的凹部7的底部7a的上表面安装功率半导体元件3，另外，利用由导热性方面优良的陶瓷材料构成的散热性绝缘层4覆盖金属壳体2的下表面(背面)。并且，金属壳体2和印刷布线板5直接安装于热沉6。据此，仅使导热性高且板厚度薄的金属壳体2的底部7a和同样地导热性好且膜厚度薄的散热性绝缘层4重叠并介于功率半导体元件3与热沉6之间，因此能够减少功率半导体元件3的下部的热阻，并能够提高散热性。因此，能够采用成本更低，面积更小的功率半导体元件作为功率半导体元件3。
另外，如图1所示，由于是将安装有功率半导体元件3的金属壳体2嵌入到安装有电路元件12a、12b、12c的印刷布线板5的贯通孔11而安装于热沉6的结构，因此不需要如以往的功率半导体模块那样，仅将由功率半导体元件3构成的主电路部收纳到单独的壳体，功率半导体元件3与印刷布线板5的电路图案10能够通过铝线13等直接地连接，据此，作为电力变换装置1的体积与以往相比能够有效地减小。
在本实施方式中，作为功率半导体元件3的安装用部件而使用了金属壳体2。若为金属壳体2，则可以通过压力而进行冲裁，因此能够利用拉伸加工而形成，能够使金属壳体2的制造变得容易。而且，由于是箱状，金属壳体2能够从印刷布线板5的上表面侧简单地嵌入到贯通孔11，在嵌入后的状态下将两者间通过粘接剂和/或钎焊进行接合而简单且适当地进行一体化。
另外，由于将功率半导体元件3安装于金属壳体2的凹部7的底部7a上表面，因此成为功率半导体元件3的周围被金属壳体2的侧壁部7b包围的状态，能够提高针对功率半导体元件3的保护功能。另外，通过将功率半导体元件3安装到金属壳体2的凹部7的底部7a上表面，从而将金属壳体2嵌入到印刷布线板5的贯通孔11，由此能够将功率半导体元件3配置于印刷布线板5的板厚内。
根据以上，在第一实施方式中，安装有功率半导体元件3的金属壳体2的凹部7的下表面(底部7a的下表面)隔着由陶瓷材料构成的散热性绝缘层4安装于热沉6，因此，能够获得散热性比以往优良的电力变换装置1。并且，作为功率半导体元件3，能够采用成本更低，面积更小的功率半导体元件3，并且将金属壳体2嵌入到印刷布线板5的贯通孔11，随之而来的电连接构造的简化等，由此能够实现小型化、低背化，并且能够实现成本的降低。
图2A～图2E是示出第一实施方式的电力变换装置的制造方法的截面图。首先，对喷镀金属壳体的制作方法进行说明。在此，对与图1相同的部件使用与图1相同的符号进行说明。
在图2A的工序中，将0.5～2.0mm程度的铜板通过冲压加工而形成中心部成型为向下方呈凹状的金属壳体2。将凹部7的形状设为从上表面观察呈正方形、长方形或圆形。这里，示出将凹部7设置为正方形的例子。
如图2A所示，金属壳体2的凹部7的底部7a具有平坦的上表面，该底部7a的上表面是针对功率半导体元件3的安装面。因此，底部7a的上表面以功率半导体元件3能够适当且容易地安装的大小形成。另外，如图2A所示，形成从凹部7的侧壁部7b的上端朝向侧壁部外方延伸出的凸缘部8。凸缘部8的形成并不是必须的，但在制造工序中，金属壳体2通过具有凸缘部8的部分从而容易搬运，另外，在后续的工序中，金属壳体2插入到印刷布线板5的贯通孔11时，能够在通过凸缘部8来保持金属壳体2的同时，平稳地插入到贯通孔11。因此，优选在金属壳体2形成凸缘部8。
另外，通过将凹部7的深度H3(≈从底部7a的下表面到凸缘部8的下表面为止的高度H1)限制为与印刷布线板5的厚度相同，从而在将金属壳体2插入到印刷布线板5的贯通孔11时，凸缘部8抵接到印刷布线板5的上表面时金属壳体2的底部7a的下表面与印刷布线板5的下表面大致在同一平坦面上。
接着，在图2B的工序中，准备掩模15。在掩模15的中央设置有开口部15a，成为开口部15a与金属壳体2的下表面2b对置的状态。若将开口部15a设置得较大，则相应地在金属壳体2的下表面2b的宽泛的区域形成散热性绝缘层4。至少开口部15a以能够与金属壳体2的凹部7的底部7a的整个下表面对置的大小形成。
如图2B所示，在使掩模15与金属壳体2的下表面2b侧对置的状态下，通过喷镀法或气溶胶沉积法来层积陶瓷粉末形成散热性绝缘层4。图2B的箭头方向示出喷镀方向，但如后所述，通过使喷镀方向不固定在同一方向而按顺序改变朝向，在立体的金属壳体2的下表面2b的倾斜角不同的各面能够高精度且简单地形成散热性绝缘层4。
喷镀法中，例如在使用等离子喷镀方法在金属壳体2的下表面2b形成散热性绝缘层4的情况下，对于陶瓷粉末来说，使用氧化硅、氧化铝、氮化硅、氮化铝、氮化硼中一种以上。作为气体环境，在大气压或减压的环境下，借由掩模15对金属壳体2进行喷镀，使散热性绝缘层4在金属壳体2的下表面2b堆积而形成绝缘金属壳体16(参见图2C)。
在此，不能在与喷镀方向平行的面进行层积，因此对在凹部7的侧壁部7b的外侧面形成散热性绝缘层4来说，从金属壳体2的横向进行喷镀。散热性绝缘层4的厚度能够通过控制喷镀时间来调整。散热性绝缘层4的厚度优选为50～500μm程度。例如，若散热性绝缘层4的厚度为500μm，则具有10kV以上的交流击穿电压，也能够用于额定耐压为1200V的功率元件。
如图2C所示，在本实施方式中，能够从金属壳体2的凹部7的底部7a下表面直到侧壁部7b的外侧面以及凸缘部8的下表面的一部分连续地形成散热性绝缘层4。
接着，对通过气溶胶沉积法在金属壳体2的下表面2b堆积散热性绝缘层4的情况进行说明。所谓气溶胶沉积法是指，将微粒子或者超微粒子原料与气体混合进行气溶胶化，通过喷嘴在基板形成被膜的技术。关于气体，使用氦气或者空气。装置由气溶胶化室和成膜室构成。成膜室通过真空泵减压至50～1kPa程度。作为原料的微粒子或者超微粒子材料在干燥的状态下在气溶胶化室内与气体进行搅拌/混合而被气溶胶化，通过由两室的压差产生的气流而被运送至成膜室，通过狭缝上的喷嘴而被加速，并喷射到金属壳体2的下表面2b。对于原料微粒子，使用机械地粉碎为粒径0.1～2μm的陶瓷粉末。被气体运送的超微粒子通过进行了减压的室内的微小开口的喷嘴，由此被加速到数百m/sec。成膜速度和/或成膜体的密度较大地取决于使用的陶瓷微粒子的粒径、凝集状态和/或干燥状态等，在气溶胶化室与成膜室之间使用凝集粒子的粉碎器和/或分级装置。
并且，为了将散热性绝缘层4形成为膜，将粒径0.1～2μm的微粒子的陶瓷以高速喷镀至基板上，并以此时的冲击能量粉碎为10～30nm左右的微结晶粒子，形成新生面，表面被活性化，粒子彼此结合，从而形成致密的纳米结晶组织的陶瓷膜。另外，能够不特别地进行加温而在常温下形成。
对于气溶胶沉积的微粒子，优选使用粒子径为0.1～2μm程度的氧化铝、氮化硅、氮化铝、氮化硼中的任一个。为了获得所需要的膜厚，以预定时间使用掩模15喷涂微粒子来形成图2C所示散热性绝缘层4。
应予说明，在气溶胶沉积法的情况下，也按照上述的喷镀法，并通过调整喷嘴的方向，如图2C所示，从金属壳体2的凹部7的底部7a下表面直到侧壁部7b的外侧面以及凸缘部8的下表面的一部分连续地形成散热性绝缘层4。
这里，对于微粒子，能够应用将氧化铝的被膜形成于氧化硅、氮化硅、氮化铝、氮化硼中的任一填充物而成的粒子，或者将氧化硅的被膜形成于氮化硅、氮化铝、氮化硼的任一填充物而成的粒子。若使用这些微粒子，则能够形成由两种以上陶瓷材料复合而成的散热性绝缘层4。
散热性绝缘层4的厚度与喷镀法同样地，优选为50～500μm程度。例如，若散热性绝缘层4的厚度为500μm，则具有10kV以上的交流击穿电压，能够应用于额定耐压为1200V的功率元件。
接着，在图2D的工序中，在金属壳体2的凹部7的底部7a上表面通过钎焊来接合功率半导体元件3。钎焊利用粒状焊料在能够氢还原的炉中进行。使用能够氢还原的炉的目的在于，通过将金属壳体2的表面的氧化膜氢还原而去除，进行活性化，从而提高焊料的浸润性。对于焊料材料，例如使用由SnPbAg构成的高温焊料、由SnAgCu系构成的无铅焊料。钎焊的温度根据焊料的融点来设定。
若在功率半导体元件3与金属壳体2之间的焊料层残留有空隙，则热阻升高，由功率半导体元件3产生的热不能高效地散热。因此，为了不产生空隙，在焊料溶融的状态下，进行10Torr(1.3kPa)以下的抽真空。
接着，准备从上表面5a直到下表面5b形成有贯通孔11的印刷布线板5。印刷布线板5构成为，在电绝缘性的基板主体9形成有例如由铜箔构成的电路图案10。贯通孔11以能够供金属壳体2插入的大小而形成。即，金属壳体2的凹部7的侧壁部7b的外部形状与贯通孔11的内部形状大致相同。
并且，在图2E的工序中，从印刷布线板5的上表面5a侧将金属壳体2嵌入。此时，利用粘接剂等将金属壳体2与印刷布线板5固定，以使其两者成为一体(例如，即使倒置金属壳体2也不会从印刷布线板5脱落)。
另外，如图2E所示，金属壳体2的凸缘部8与在印刷布线板5的上表面5a设置的铜箔图案10a对置，通过将金属壳体2嵌入到印刷布线板5的贯通孔11，从而能够使得凸缘部8与铜箔图案10a抵接。然后，通过在凸缘部8与铜箔图案10a之间进行钎焊，从而能够将金属壳体2与印刷布线板5适当地且简单地一体化。
图3A～图3C是示出继图2A～图2E之后进行的第一实施方式的电力变换装置的制造方法的截面图。
在图3A的工序中，在功率半导体元件3与印刷布线板5的电路图案10之间通过铝线13连接。据此，在功率半导体元件3与印刷布线板5的电路图案10之间能够形成电路。铝线13是线径为125～500μm的Al线，接合利用超声波结合来进行。在此，对于功率半导体元件3与印刷布线板5的电路图案10之间的接合，也可以使用引线框和/或带状铝。
接着，在图3B的工序中，在印刷布线板5的电路图案10上安装各种电路元件12a、12b、12c。对于各电路元件12a、12b、12c的安装，通常使用膏状焊料，利用回流炉进行。据此，制成金属壳体2与印刷布线板5成为一体，功率半导体元件3与各电路元件12a、12b、12c电连接而成的电力变换元件17。
最后，将图3B中得到的电力变换元件17隔着散热润滑脂安装于热沉6。然后，通过覆盖罩14，从而完成电力变换装置1(参见图3C)。
如上所述，在金属壳体2的下表面(背面)2b形成的散热性绝缘层4，利用气溶胶沉积法或者等离子喷镀法形成。据此，具有如下优点。
首先，第一，能够提高绝缘耐压。在气溶胶沉积法中，能够在室温(常温)下成膜，并且以声速水平的速度使亚微米级的陶瓷微粒子撞击到基板，因此露出了活性的新生面的陶瓷微粒子相互结合。另外，通过等离子喷镀法也同样。无论在何种方法中，都能够形成非常致密的作为电绝缘膜的陶瓷微粒子层，在膜内不含有空孔(空隙)，因此与通过以往的烧结法形成的陶瓷板相比每单位长度的击穿电压能够提高10倍左右。
第二，能够使热阻下降。热传导率与块状体相同，热传导率能够确保为以下程度：例如，为氧化铝(Al2O3)时约为20W/m·K，为氮化铝(AlN)时约为160～180W/m·K，为氮化硅(Si3N4)时约为80W/m·K。并且，每单位长度的击穿电压升高，因此能够较薄地形成散热性绝缘层4，因此能够降低整体的热阻。
根据以上，通过将形成于金属壳体2的下表面2b的散热性绝缘层4利用气溶胶沉积法或者等离子喷镀法形成，从而能够同时确保高绝缘和低热阻。
如此，在本实施方式的电力变换装置1中，安装有功率半导体元件3的金属壳体2的下表面隔着由导热性良好的陶瓷材料构成的散热性绝缘层4直接安装于热沉6，因此能够使功率半导体元件3下部的热阻充分小，能够获得良好的散热性。并且，在本实施方式中，通过使用金属壳体2，并在凹部7内安装功率半导体元件3，从而能够有效地缩短功率半导体元件3与热沉6之间的距离，由功率半导体元件3产生的热能够高效地放出至热沉6。
图4是示出第二实施方式的电力变换装置的结构的截面图。在图4中，与图1相同的部件使用与图1相同的符号进行说明。
在图4所示的实施方式中，在金属壳体2的凹部7的底部7a的上表面具备功率半导体元件3和中继电极18。如图4所示，中继电极18隔着中继电极用绝缘层19配置在底部7a上表面。中继电极用绝缘层19优选由与散热性绝缘层4同样的导热性良好的陶瓷材形成。即，对于中继电极用绝缘层19，优选的是热传导率为1～300W/m·K，厚度为10～500μm，并优选为由选自氧化硅、氧化铝、氮化硅、氮化铝和氮化硼的填充物群组中的一种以上形成。
如图4所示，功率半导体元件3与中继电极18由键合线20连接，中继电极18与印刷布线板5的电路图案10由键合线21连接。或者，也可以将键合线20、21设置为引线框。
在图4的实施方式中，金属壳体2也嵌入到在印刷布线板5形成的贯通孔11，将金属壳体2嵌入到印刷布线板5的贯通孔11而直接安装于热沉6的上表面。
另外，如图4所示，在金属壳体2的下表面2b直接形成有由陶瓷材料构成的散热性绝缘层4。
因此，安装有功率半导体元件3的金属壳体2的凹部7的下表面(底部7a的下表面)成为隔着导热性优良的散热性绝缘层4而抵接到热沉6的上表面的状态。根据以上，在图4的实施方式中，能够充分地减少功率半导体元件3的下部的热阻，而成为具备优良的散热性的结构。因此，，能够采用成本更低，面积更小的功率半导体元件作为功率半导体元件3。
另外，如图4所示，由于是将安装有功率半导体元件3的金属壳体2嵌入到安装有电路元件12a、12b、12c的印刷布线板5的贯通孔11，并直接安装于热沉6的结构，因此不需要如以往的功率半导体模块那样，仅将由功率半导体元件3构成的主电路部收纳到单独的壳体，功率半导体元件3与印刷布线板5的电路图案10能够通过键合线20、21直接地连接，据此，作为电力变换装置1的体积与以往相比能够有效地减小。
在本实施方式中，作为功率半导体元件3的安装用部件而使用了金属壳体2。若为金属壳体2，则可以通过压力而进行冲裁，因此能够利用拉伸加工而形成，能够使金属壳体2的制造变得容易。而且，由于是箱状，金属壳体2能够从印刷布线板5的上表面侧简单地嵌入到贯通孔11，在嵌入后的状态下将两者间通过粘接剂和/或钎焊进行接合而简单且适当地进行一体化。
另外，由于将功率半导体元件3安装于金属壳体2的凹部7的底部7a上表面，因此成为功率半导体元件3的周围被金属壳体2的侧壁部7b包围的状态，能够提高针对功率半导体元件3的保护功能。另外，通过将功率半导体元件3安装到金属壳体2的凹部7的底部7a的上表面，从而在将金属壳体2嵌入到印刷布线板5的贯通孔11的状态下，能够将功率半导体元件3配置于印刷布线板5的板厚内，能够缩短功率半导体3与热沉6之间的距离，能够更有效地提高散热性。
根据以上，在第二实施方式中，安装有功率半导体元件3的金属壳体2隔着由陶瓷材料构成的散热性绝缘层4被安装于热沉6，因此能够获得散热性比以往优良的电力变换装置。并且，作为功率半导体元件3，能够采用成本更低，面积更小的功率半导体元件3，并且通过将金属壳体2嵌入到印刷布线板5的贯通孔11，随之而来的电连接构造的简化等，从而能够实现小型化、低背化，并且能够实现成本的降低。
并且，在第二实施方式中，由于设置了中继电极18，因此能够更有效地提高散热性，特别地，能够抑制传送至印刷布线板5侧的热量。
图4所示的箭头表示功率半导体元件3动作时产生了热的情况下的热的流向。空心箭头的宽度定性地表示流过的热量的大小。在图4中，仅示出沿着功率半导体元件3的左侧的键合线流过的热的流向。
如图4所示，功率半导体元件3动作时所产生的热从功率半导体元件3借由焊料层(未图示)、金属壳体2的底部7a以及散热性绝缘层4而传送至热沉6(箭头h1)。
此时，一部分的热，经由键合线20传送至中继电极18(箭头h2)。传送至中继电极18的热，借由其下的由散热性优良的陶瓷材料构成的中继电极用绝缘层19、金属壳体2的底部7a以及散热性绝缘层4而传送至热沉6(箭头h3)。
因此，能够充分地减少从中继电极18经由键合线21传送至印刷布线板5侧的热量(箭头h4)。
另外，在图4所示的结构中，功率半导体元件3所产生的热放出至热沉6位置的导热路径具有：从功率半导体元件3借由金属壳体2的底部7a以及散热性绝缘层4而传送的箭头h1的路径，和从中继电极18借由金属壳体2的底部7a以及散热性绝缘层4而传送的箭头h3的路径这两条路径，因此与图1所示的第一实施方式相比，能够高效地将热放出至热沉6，而能够获得散热性更优良的电力变换装置。
图5是示出第三实施方式的电力变换装置的结构的截面图。在图5中，与图1相同的部件使用与图1相同的符号进行说明。
如图5所示，在设置于印刷布线板5的贯通孔11的内壁面形成有导体部22。导体部22在印刷布线板5的上表面5a和下表面5b延伸而构成上表面台肩部22a和下表面台肩部22b。
如图5所示，散热性绝缘层4从金属壳体2的底部7a的下表面直到下表面台肩部22b的下表面连续地形成。据此，在将金属壳体2与印刷布线板5作为一体直接安装到热沉6时，能够适当地确保金属壳体2以及下表面台肩部22b与热沉6之间的电绝缘性。
在图5所示的实施方式中，如图2B、图2C所示金属壳体2没有单独形成散热性绝缘层4，在将金属壳体2嵌入到印刷布线板5的贯通孔11之后，使用掩模，形成从金属壳体2的下表面直到印刷布线板5的下表面台肩部22b的下表面连续的散热性绝缘层4。
在图5所示的实施方式中，安装有功率半导体元件3的金属壳体2的凹部7的底部7a也成为隔着导热性方面优良的散热性绝缘层4抵接到热沉6的上表面的状态。因此，能够充分地减少功率半导体元件3的下部的热阻，而能够成为具备优良的散热性的结构。因此，能够采用成本更低，面积更小的功率半导体元件作为功率半导体元件3。
另外，如图5所示，由于是将安装有功率半导体元件3的金属壳体2嵌入到安装有电路元件12a、12b、12c的印刷布线板5的贯通孔11，并直接安装于热沉6的结构，因此不需要如以往的功率半导体模块那样，仅将由功率半导体元件3构成的主电路部收纳到单独的壳体，功率半导体元件3与印刷布线板5的电路图案10能够通过铝线13直接地连接，据此，作为电力变换装置的体积与以往相比能够有效地减小。
在本实施方式中，作为功率半导体元件3的安装用部件而使用了金属壳体2。若为金属壳体2，则可以通过压力而进行冲裁，因此能够利用拉伸加工而形成，能够使金属壳体2的制造变得容易。而且，由于是箱状，金属壳体2能够从印刷布线板5的上表面侧简单地嵌入到贯通孔11，在嵌入后的状态下将两者间通过粘接剂和/或钎焊进行接合而简单且适当地进行一体化。
另外，由于将功率半导体元件3安装于金属壳体2的凹部7的底部7a的上表面，因此成为功率半导体元件3的周围被金属壳体2的侧壁部7b包围的状态，能够提高针对功率半导体元件3的保护功能。另外，通过将功率半导体元件3安装到金属壳体2的凹部7的底部7a的上表面，从而在将金属壳体2嵌入到印刷布线板5的贯通孔11内的状态下，能够将功率半导体元件3配置于印刷布线板5的板厚内，能够缩短功率半导体3与热沉6之间的距离，能够更有效地提高散热性。
根据以上，在第三实施方式中，安装有功率半导体元件3的金属壳体2隔着由陶瓷材料构成的散热性绝缘层4被安装于热沉6，因此能够获得散热性比以往优良的电力变换装置。并且，作为功率半导体元件3，能够采用成本更低，面积更小的功率半导体元件3，并且通过将金属壳体2嵌入到印刷布线板5的贯通孔11，随之而来的电连接构造的简化等，从而能够实现小型化、低背化，并且能够实现成本的降低。
本申请基于2014年3月31日申请的日本特愿2014-071982。其内容全部包含于此。

Claims (7)

1.一种电力变换装置，其特征在于，具备：
印刷布线板，其设置在散热用的热沉上，具有贯通孔且具备布线；
金属壳体，其具有嵌入到所述贯通孔的具有底部和侧壁部的凹部，所述凹部的底部隔着由陶瓷材料构成的散热性绝缘层安装在所述热沉上；和
功率半导体元件，其安装在所述凹部内，与所述印刷布线板的布线电连接，
使所述散热性绝缘层的下表面与所述印刷布线板的下表面大致在同一平面齐平，
散热性绝缘层从所述金属壳体的凹部的底部下表面直到侧壁部的外侧面连续地形成。
2.如权利要求1所述的电力变换装置，其特征在于，
所述金属壳体具有：
所述凹部，其由底部和侧壁部包围而成；和
凸缘部，其设置在所述侧壁部的上端，朝向侧壁部外侧延长而伸出。
3.如权利要求2所述的电力变换装置，其特征在于，
所述凸缘部与设置于所述印刷布线板的上表面的金属箔图案对置，对所述凸缘部和所述金属箔图案进行钎焊。
4.如权利要求1～3中任一项所述的电力变换装置，其特征在于，
所述散热性绝缘层的热传导率为1～300W/m·K，厚度为10～500μm。
5.如权利要求1～3中任一项所述的电力变换装置，其特征在于，
所述散热性绝缘层由选自氧化硅、氧化铝、氮化硅、氮化铝以及氮化硼的填充物群组中一种以上形成。
6.如权利要求1～3中任一项所述的电力变换装置，其特征在于，
所述散热性绝缘层是将一种以上的陶瓷粒子利用等离子喷镀法进行堆积而形成的。
7.如权利要求1～3中任一项所述的电力变换装置，其特征在于，
所述散热性绝缘层是将一种以上的陶瓷粒子利用气溶胶沉积法进行堆积而形成的。
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