CN110326103A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN110326103A
CN110326103A CN201880013261.3A CN201880013261A CN110326103A CN 110326103 A CN110326103 A CN 110326103A CN 201880013261 A CN201880013261 A CN 201880013261A CN 110326103 A CN110326103 A CN 110326103A
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China
Prior art keywords
sealing material
semiconductor element
semiconductor device
semiconductor
wiring part
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CN201880013261.3A
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English (en)
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CN110326103B (zh
Inventor
坂元创一
藤野纯司
川岛裕史
前田健寿
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Mitsubishi Corp
Miyoshi Electronics Corp
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Mitsubishi Corp
Miyoshi Electronics Corp
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Publication of CN110326103A publication Critical patent/CN110326103A/zh
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Abstract

本发明的目的在于提供一种针对热应力进一步提高可靠性的半导体装置。另外，本发明的半导体装置具备：绝缘层(32)；导电层(33)，与绝缘层(32)的一方主面接合；以及半导体元件(1)，配置为上表面与绝缘层(32)的所述一方主面朝向相同的方向，在半导体元件(1)的上表面设置有上表面电极(9)，还具备：具有中空部分(4a)的布线部件(4)，一端与半导体元件(1)的上表面电极(9)电接合，另一端与导电层(33)电接合；第1密封材料(71)；以及第2密封材料(72)，比第1密封材料(71)软，第1密封材料(71)以与半导体元件(1)接触的方式密封半导体元件(1)的至少一部分，第2密封材料(72)以与布线部件(4)接触的方式密封布线部件(4)。

Description

半导体装置
技术领域
本发明涉及半导体装置，例如涉及处理高频信号的半导体装置。
背景技术
近年来，伴随因特网的普及，便携电话、智能手机等移动通信装置的通信的高速化成为趋势。另外，防灾无线方式的影像发送接收的必要性等从安全方面的需求也变高。与其相伴地，针对作为关键设备的高频通信用封装体的高可靠性化成为当务之急。
高频封装体是对超过几十MHz的频率的信号一边进行放大、匹配一边进行输入输出的半导体装置。伴随通信的高速化的需求，要求半导体装置的高输出化。在高输出化的半导体装置，要求散热性高的封装体构造。在散热性高的封装体构造，例如采用对具有铜(Cu)等散热性优良的材料的散热板粘贴有玻璃环氧等绝缘层的基体板。
在这样的基体板，用机械加工等切削玻璃环氧层，在露出于金属基体基板的凹部的金属板对半导体元件进行管芯结合(die bond)处理，用导线键合形成布线，进行用于防尘的树脂密封，从而形成封装体。
作为半导体元件的基材的硅(Si)、砷化镓(GaAs)、碳化硅(SiC)、氮化镓(GaN)等的热膨胀系数为3ppm/K以上且6ppm/K以下左右的范围。该值显著小于构成用于散热的基体板的Cu的热膨胀系数(16ppm/K)。因此，由于由制造工艺中的管芯结合工序、可靠性评价中的温度循环等产生的热应力，有可能在接合半导体元件和基体板的管芯结合部产生破裂等而散热性劣化。因此，采取了利用为了增强管芯结合部而使填料分散后的环氧等密封材料对半导体元件进行密封等的对策。然而，由于密封材料和基体板的膨胀系数差而在基体板产生翘曲，所以有可能密封材料从基体板剥离。由于密封材料剥离，导线键合部可能会受到损害。
例如，在专利文献1中，提出了用不同物性的材料对覆晶安装后的元件周边和其以外进行密封的方法。另外，在专利文献2中，示出了通过用硬的环氧树脂对元件周边进行密封并且整体用软的聚氨酯树脂密封来确保可靠性的方法。
现有技术文献
专利文献
专利文献1：日本特开平10-209344号公报
专利文献2：日本特开2006-351737号公报
发明内容
如上所述，伴随通信的高速化以及半导体装置的高输出化，在半导体装置内部产生的热应力也增大。因此，对于针对热应力提高可靠性的半导体装置的要求进一步变高。
本发明是为了解决如以上那样的课题而完成的，其目的在于提供一种针对热应力进一步提高可靠性的半导体装置。
本发明的半导体装置具备：绝缘层；导电层，与绝缘层的一方主面接合；以及半导体元件，配置为上表面朝向与绝缘层的一方主面相同的方向，在半导体元件的上表面设置有上表面电极，半导体装置还具备：具有中空部分的布线部件，一端与半导体元件的上表面电极电接合，另一端与导电层电接合；第1密封材料；以及第2密封材料，比第1密封材料软，第1密封材料以与半导体元件接触的方式密封半导体元件的至少一部分，第2密封材料以与布线部件接触的方式密封布线部件。
在本发明的半导体装置，用相对硬的第1密封材料对半导体元件进行密封，所以能够抑制半导体元件的剥离。另外，用相对软的第2密封材料对布线部件进行密封，所以即使在由于绝缘层以及导电层产生翘曲等而对布线部件的周围施加了热应力的情况下，也能够对布线部件进行防尘且减少针对布线部件的热应力。因此，能够提高半导体装置的可靠性。另外，在本发明的半导体装置，通过第1密封材料以与半导体元件接触的方式对半导体元件进行密封，能够对半导体元件均匀地进行密封。同样地，通过第2密封材料以与布线部件接触的方式对布线部件进行密封，能够对布线部件均匀地进行密封。因此，能够进一步提高半导体装置的可靠性。
本发明的目的、特征、方案以及优点通过以下的详细的说明和附图而更加明确。
附图说明
图1是实施方式1的半导体装置的剖面图。
图2是实施方式1的半导体装置的俯视图。
图3是实施方式2的半导体装置的剖面图。
图4是实施方式2的半导体装置的俯视图。
图5是示出实施方式2的半导体装置的制造工序的图。
图6是示出实施方式2的半导体装置的制造工序的图。
图7是示出实施方式2的半导体装置的制造工序的图。
图8是示出实施方式2的半导体装置的制造工序的图。
图9是示出实施方式2的半导体装置的制造工序的图。
图10是实施方式3的半导体装置的剖面图。
图11是实施方式3的半导体装置的俯视图。
图12是实施方式3的变形例的半导体装置的剖面图。
图13是实施方式4的半导体装置的剖面图。
图14是实施方式4的半导体装置的俯视图。
图15是实施方式5的半导体装置的俯视图。
图16是实施方式6的半导体装置的俯视图。
图17是实施方式7的半导体装置的俯视图。
图18是实施方式7的半导体装置的剖面图。
图19是示意地示出气桥(air bridge)存在区域的俯视图。
图20是作为实施方式7的变形例的半导体装置的俯视图。
图21是作为实施方式7的变形例的半导体装置的剖面图。
(符号说明)
1：半导体元件；2、51：接合材料；3：基体基板；31：散热板；32：绝缘层；32a：侧面；33：导电层；331、332、333、334：导电图案；331a、333a：外部电极部分；331b、332a：布线部件接合部分；4、41、42：布线部件；4a：中空部分；5：电子构件；6：盖部；61：粘接剂；71：第1密封材料；72：第2密封材料；8：开口部；9、91、92：上表面电极；100：气桥存在区域。
具体实施方式
<实施方式1>
图1是本实施方式1中的半导体装置的剖面图。图2是本实施方式1中的半导体装置的俯视图。图1所示的半导体装置的剖面是沿着图2的线段A-A的剖面。此外，在图2中，为了使附图易于理解，用虚拟线记载了第2密封材料72以及盖部6。
本实施方式1中的半导体装置具备绝缘层32、导电层33、散热板31、半导体元件1、多个布线部件4、第1密封材料71以及第2密封材料72。基体基板3包括散热板31、绝缘层32以及导电层33。在散热板31的上表面接合绝缘层32。在绝缘层32的上表面接合导电层33。
多个布线部件4包括输入侧的布线部件41和输出侧的布线部件42。在不特别区分输入侧和输出侧的情况下，简单地记载为布线部件4。布线部件4具备中空部分4a。如图1所示，中空部分4a是在供布线部件4的两端接合的部分之间存在的部分。
导电层33包括相互分离的多个导电图案331、332、333、334。多个导电图案331分别具备被输入高频信号的外部电极部分331a和布线部件接合部分331b。多个导电图案332分别具备布线部件接合部分332a。多个导电图案333分别具备输出高频信号的外部电极部分333a。
半导体元件1例如是Si制的MHz频带用功率放大器用元件。半导体元件1在上表面具备多个上表面电极9。上表面电极9包括输入侧的上表面电极91和输出侧的上表面电极92。在不特别区分输入侧和输出侧的情况下，简单地记载为上表面电极9。上表面电极9例如是包含铝(Al)的合金制的电极。半导体元件1的下表面经由接合材料2与导电图案334接合。
半导体元件1的输入侧的上表面电极91和导电图案331通过布线部件41电接合。即，布线部件41的一端与半导体元件1的输入侧的上表面电极91接合，布线部件41的另一端与导电图案331的布线部件接合部分331b接合。半导体元件1的输出侧的上表面电极92和导电图案332通过布线部件42电接合。即，布线部件42的一端与半导体元件1的输出侧的上表面电极92电接合，布线部件42的另一端与导电图案332的布线部件接合部分332a电接合。在本实施方式1中，布线部件4例如是直径0.15mm的Al制导线。
另外，多个导电图案332和多个导电图案333分别经由用于调整高频特性的电子构件5电连接。导电图案331的外部电极部分331a被用作半导体装置的外部电极。导电图案333的外部电极部分333a被用作半导体装置的外部电极。
如图1所示，半导体元件1被第1密封材料71密封。第1密封材料71例如是环氧树脂。通过使二氧化硅填料在环氧树脂中分散，膨胀系数被调整为16ppm/K左右。
此外，半导体元件1的表面被第1密封材料71密封。第1密封材料71与半导体元件1接触。另外，导电图案334的上表面以及接合材料2也被第1密封材料71密封。第1密封材料71还与导电图案334和接合材料2接触。
第2密封材料72对布线部件4和被第1密封材料71密封的半导体元件1进行密封。第2密封材料72比第1密封材料71软。第2密封材料72例如是硅酮凝胶(silicone gel)。此外，第2密封材料72与布线部件4的表面接触。
另外，以覆盖半导体元件1、布线部件4、第1密封材料71、第2密封材料72等的方式，盖部6被粘接剂61固定到导电层33。盖部6例如是聚苯硫醚(PPS)树脂。粘接剂61例如是硅酮粘接剂。
在本实施方式1中，在导电图案334的上表面配置有1个半导体元件1，但也可以在导电图案334的上表面配置有多个半导体元件1。另外，半导体元件1是对经由输入侧的上表面电极91输入的高频信号进行功率放大并将放大后的高频信号从输出侧的上表面电极92输出的高频功率放大元件。
此外，作为安装于本实施方式1的半导体装置的封装体的半导体元件1，不仅可以具有上述功率放大功能，还可以具有高频信号的开关功能。高频信号是超过几十MHz的频率的信号。例如，半导体元件1也可以是包含硅的MOS-FET(Metal Oxide Semiconductor，金属氧化物半导体)、LDMOS(Lateral double Diffused MOSFET，横向双扩散MOSFET)。另外，半导体元件1也可以是作为化合物半导体的包含磷砷化镓的GaAs-HFET(HeterostructureField Effect Transistor，异质结构场效应晶体管)、GaAs-HBT(Heterojunction BipolarTransistor，异质结双极晶体管)。另外，半导体元件1也可以是包含氮化镓的GaN-HFET(Heterostructure Field Effect Transistor，异质结构场效应晶体管)。作为宽能带隙半导体的氮化镓制的半导体元件具有高的电子速度、基于宽能带隙的高的绝缘破坏电压、能够大电力动作、宽的动作频带宽度、能够高温动作、低成本且能够小型化这样的各种优点。在将多个半导体元件1配置于导电图案334的上表面的情况下，多个半导体元件1可以是相同的半导体元件，也可以是不同的半导体元件。
散热板31具有将在半导体元件1动作时产生的大量的热朝向外部散热的功能。通过基于对流以及辐射的向空中的热传递和传递于接触的物体的热传导，引起散热。因此，利用导热性优良的材料形成散热板31，利用气冷、水冷等使配置于散热板31的与半导体元件1相反的一侧的面的散热器(未图示)冷却，从而能够使从半导体元件1产生的热高效地经由散热板31向外部扩散。
在本实施方式1中，使用Cu制的散热板31，但散热板31的原材料不限于此。散热板31例如也可以是铁(Fe)、钨(W)、钼(Mo)、镍(Ni)或者钴(Co)等金属材料、或者含有这些金属材料的合金材料。另外，散热板31也可以是组合这些金属材料或者合金材料而成的复合材料。
铜和钨的合金(Cu-W)是兼具钨的低热膨胀性和铜的高导热性的复合材料。通过改变钨和铜的组成比例，能够与周边材料相应地调整热膨胀系数。另外，铜和钼的合金(Cu-Mo)能够期待比Cu-W高的热传导率，同样是能够通过改变钼和铜的组成比例而调整热膨胀系数以及热传导率的材料。另外，还可以举出以Cu-Mo为芯材并在两面贴合有Cu的三层构造的包覆材料等。该包覆材料由于表面是纯铜，所以能够增大表面的热分散。
绝缘层32例如是如FR(Flame Retardant，阻燃剂)-4、FR-5等那样的玻璃环氧基板。绝缘层32也可以是氧化铝基板。导电层33只要是具有导电性的材料，则没有特别限制。导电层33也可以具备主要包含Cu、Al等的材料。另外，导电层33也可以通过在绝缘层32上镀敷Au、Ag等导电材料而形成。
在本实施方式1中，如图2所示，在多个导电图案331，布线部件接合部分331b成为相互分离的形状，但布线部件接合部分331b也可以不分离而成为一体。在该情况下，在对作为布线部件41的导线进行导线键合时，只要设定半导体元件1的上表面电极9和布线部件接合部分331b的距离以及高度即可，无需针对各布线部件接合部分331b的高精度的对位。因此，能够缩短导线键合所需的时间。
如图2所示，在布线部件接合部分331b相对每个布线部件41被分离时，绝缘层32和第2密封材料72密接的面积增加，所以可靠性提高。这样，只要考虑权衡制造时的生产节拍与可靠性来决定布线部件接合部分331b的形状即可。此外，关于多个导电图案332的布线部件接合部分332a的形状，也考虑权衡制造时的生产节拍与可靠性来决定。
导电图案334的数量与半导体元件1同样地只要是1个以上即可，在本实施方式1中，说明了导电图案334为1个的情况。另外，虽然在本实施方式1中未记载，但也可以为了控制用于接合电子构件5的接合材料51的湿润扩展范围而在绝缘层32上形成阻焊剂。
基体基板3包括散热板31、绝缘层32、导电层33。散热板31经由如通过玻璃布被强化后的环氧树脂那样的纤维强化树脂材料等与绝缘层32接合。该纤维强化树脂材料的软化温度最好高于接合材料51的熔点。
电子构件5例如是芯片电阻。芯片电阻搭载于导电层33以用于半导体元件1的高频特性的调整。此外，在本实施方式1中，作为电子构件5搭载有芯片电阻，但电子构件5例如也可以是芯片电容器等。另外，搭载导电层33的电子构件5只要是1个以上即可。在搭载多个电子构件5的情况下，电子构件可以相同，也可以相互不同。电子构件5通过接合材料51与导电层33接合。接合材料51例如是焊膏。焊膏不限于Pb系焊料，也可以是如SAC305那样的无Pb焊料。
半导体元件1经由接合材料2与导电层33的导电图案334接合。在本实施方式1中，接合材料2是Au-Sn、Au-Ge、Au-Si等焊料合金。接合材料2不限定于低熔点的焊料合金，也可以是使导热性高的金属填料分散而成的导电性粘接剂。导电性粘接剂能够在200℃以下的低温下进行管芯结合，能够减少管芯结合时的对周边部件施加的热应力和翘曲的发生。另外，分散于导电性粘接剂的金属填料一般为Ag填料，但也可以是Ag以外的金属，Cu填料、Ni填料、Au填料、Pd填料、碳填料等也能够得到与Ag填料同样的效果。
另外，作为接合材料2，也可以使用将微米尺寸的金属粒子、纳米尺寸的金属粒子或者微米尺寸和纳米尺寸的金属粒子混合于溶剂而成的烧结性金属膏。烧结性金属膏与导电性粘接剂同样地能够在约200℃下进行管芯结合。进而，关于烧结后的烧结金属膏，金属粒子彼此烧结接合，成为接近金属块体(bulk)的状态，所以能够得到非常高的耐热性。作为结果，能够提高175℃以上的高温动作时的可靠性。另外，作为烧结金属膏，一般为使用Ag粒子的Ag膏，但也可以是Ag以外的粒子，使Cu粒子、Ni粒子、Au粒子等混合于溶剂而成的膏也能够得到同样的效果。
被用作第1密封材料71的环氧树脂是杨氏模量相对高且硬的树脂。因此，通过覆盖半导体元件1以及接合材料2而保持，能够提高半导体装置相对热应力的可靠性。环氧树脂的弯曲弹性模量是100MPa以上且20000MPa以下，玻璃转移温度Tg是140℃以上且210℃以下，热膨胀系数α1在Tg以下的温度下是10×10-6/K以上且50×10-6/K以下。第1密封材料71的弯曲弹性模量更优选为约150MPa，玻璃转移温度Tg更优选为175℃以上且210℃以下，热膨胀系数α1更优选为在Tg以下的温度下是10×10-6/K以上且20×10-6/K以下。如果玻璃转移温度是175℃以上，则在半导体装置的动作时的最大温度下也能够避免线膨胀系数2～4倍地急剧上升，能够确保高温动作时的可靠性。此外，第1密封材料71不限定于环氧树脂，只要是满足上述物性的材料，则可以是具有任意的分子构造的材料。
还被用作第2密封材料72的硅酮凝胶是相对软的树脂，所以能够吸收热应力所引起的变形。因此，不会对布线部件4造成大的负荷而承担防尘的作用。硅酮凝胶没有特别限制，但最好为易于使用的1液型，良好地粘接到金属、陶瓷、玻璃等，固化温度为200℃以下，弯曲弹性模量为1MPa以上且5MPa以下，粘度为10Pa·s以上且20Pa·s以下，固化后的渗透度为30以上且100以下(按JIS K 6249测定渗透度)。此外，第2密封材料72不限定于硅酮凝胶，只要是满足上述物性的材料，则可以是具有任意的分子构造的材料。此外，第1密封材料71、第2密封材料72的上述弯曲弹性模量是基于JIS K 6911(热固化性塑料一般试验方法)的规定的值。
<制造方法>
说明本实施方式1中的半导体装置的制造方法。首先，准备基体基板3。接下来，通过再流方式将电子构件5接合到导电层33。即，在基体基板3的导电层33的导电图案332、导电图案333上配置接合材料51即焊膏，在接合材料51上搭载有电子构件5的状态下，对接合材料51进行加热而使其融化。
接下来，将半导体元件1用接合材料2接合到导电图案334。接合材料2是使银(Ag)填料分散于环氧树脂而成的导电性粘接剂。在将半导体元件1经由接合材料2配置于导电图案334的状态下，在150℃下加热2小时，从而进行接合。
接下来，通过导线键合将半导体元件1的输入侧的上表面电极91和导电图案331用导线即布线部件41接合。另外，通过导线键合将半导体元件1的输出侧的上表面电极92和导电图案332用导线即布线部件42接合。
接下来，通过分配器(dispenser)将环氧树脂作为第1密封材料71供给给半导体元件1。通过在130℃下加热1.5小时，环氧树脂固化。其结果，半导体元件1被第1密封材料71密封。
接下来，从第1密封材料71的外侧将硅酮凝胶作为第2密封材料72涂敷到半导体元件周边。通过在130℃下加热30分钟，硅酮凝胶固化。其结果，半导体元件1从第1密封材料71的外侧被第2密封材料72密封。另外，布线部件4被第2密封材料72密封。
最后，以覆盖半导体元件1、布线部件4、电子构件5等的方式，将盖部6用粘接剂61粘接到导电层33。粘接剂61例如是硅酮粘接剂，通过在120℃下加热1小时，粘接剂61固化。
<效果>
本实施方式1中的半导体装置具备：绝缘层32；导电层33，与绝缘层32的一方主面接合；以及半导体元件1，配置为上表面朝向与绝缘层32的所述一方主面相同的方向，在半导体元件1的上表面设置有上表面电极9，半导体装置还具备：具有中空部分4a的布线部件4，一端与半导体元件1的上表面电极9电接合，另一端与导电层33电接合；第1密封材料71；以及第2密封材料72，比第1密封材料71软，第1密封材料71以与半导体元件1接触的方式密封半导体元件1的至少一部分，第2密封材料72以与布线部件4接触的方式密封布线部件4。
在本实施方式1中的半导体装置，用相对硬的第1密封材料71对半导体元件1进行密封，所以能够抑制半导体元件1剥离。另外，用相对软的第2密封材料72对布线部件4进行密封，所以即使在由于在绝缘层32以及导电层33产生翘曲等而对布线部件4的周围施加了应力的情况下，也能够对布线部件4进行防尘且减少针对布线部件4的应力。因此，能够提高半导体装置的可靠性。
进而，在本实施方式1中的半导体装置，通过第1密封材料71以与半导体元件1接触的方式对半导体元件1进行密封，能够对半导体元件1均匀地进行密封。同样地，通过第2密封材料72以与布线部件4接触的方式对布线部件4进行密封，能够对布线部件4均匀地进行密封。因此，能够进一步提高半导体装置的可靠性。
另外，在本实施方式1中的半导体装置，布线部件4的与第2密封材料72接触的面积大于布线部件4的与第1密封材料71接触的面积。即，在本实施方式1中，如图1所示，布线部件4的与半导体元件1的上表面电极9的接合部分的周边被第1密封材料71密封，但布线部件4的大半的部分被第2密封材料72密封。通过布线部件4的大半的部分用相对软的第2密封材料72密封，能够减少针对布线部件4的热应力。
另外，在本实施方式1中的半导体装置，布线部件4是导线。一般而言，相对从外部施加的力，导线易于受到断线等损害。在本实施方式4中，通过用相对软的第2密封材料72对导线进行密封，即使在基体板3产生翘曲的情况下，也能够减少针对布线部件4的热应力。
另外，在本实施方式1中的半导体装置，第2密封材料72的弯曲弹性模量小于第1密封材料71的弯曲弹性模量。例如，在本实施方式1中，将第2密封材料72的弯曲弹性模量设为1MPa以上且5MPa以下，将第1密封材料71的弯曲弹性模量设为约150MPa。通过用弯曲弹性模量相对大即相对硬的第1密封材料71对半导体元件1进行密封，能够经由接合材料2将半导体元件1稳固地保持于导电图案334。另外，通过用弯曲弹性模量相对小即相对软的第2密封材料72对布线部件4进行密封，能够减少针对布线部件4的热应力。
<实施方式2>
图3是本实施方式2中的半导体装置的剖面图。图4是本实施方式2中的半导体装置的俯视图。图3所示的半导体装置的剖面是沿着图4的线段B-B的剖面。此外，在图4中，为了使附图易于理解，用虚拟线记载了第2密封材料72以及盖部6。
在本实施方式2中，在基体基板3的大致中央，设置有开口部8。通过设置该开口部8，能够缩短作为减少高频特性的因素之一的布线部件4的长度，所以能够实现适合于高频半导体装置的构造。
在开口部8，散热板31未被绝缘层32覆盖。开口部8例如是通过利用机械加工对绝缘层32进行切削而形成的。另外，在本实施方式2中，在基体基板3设置有开口部8，所以导电层33是不具备在实施方式1中叙述的导电图案334的结构。在本实施方式2中，半导体元件1的下表面在基体基板3的开口部8经由接合材料2被接合到散热板31。
基体基板3的开口部8以及半导体元件1被第1密封材料71密封。第1密封材料71例如是环氧树脂。第1密封材料71具有在实施方式1中叙述的物理特性。
开口部8的周边被第2密封材料72密封。第2密封材料72比第1密封材料71软。第2密封材料72例如是硅酮凝胶。第2密封材料72对布线部件4进行密封。另外，第2密封材料72从第1密封材料71的外侧对半导体元件1进行密封。第2密封材料72具有在实施方式1中叙述的物理特性。
半导体元件1配置于基体基板3的开口部8内。在本实施方式2中，在开口部8内配置有1个半导体元件1，但也可以在开口部8内配置有多个半导体元件1。在将多个半导体元件1配置于开口部8的情况下，多个半导体元件1可以是相同的半导体元件，也可以是不同的半导体元件。
绝缘层32具有到达至散热板31的深度的开口部8，在俯视基体基板3单体时，散热板31向外部露出。开口部8的数量与半导体元件1同样地只要是1个以上即可，在本实施方式2中，说明开口部8为1个的情况。
此外，本实施方式2的半导体装置的其他结构与实施方式1的半导体装置相同，所以省略说明。
<制造方法>
图5至图9是示出本实施方式2中的半导体装置的制造工序的图。首先，准备基体基板3。接下来，如图5所示，通过再流方式将电子构件5接合到导电层33。即，在基体基板3的导电层33的导电图案332、导电图案333上配置接合材料51即焊膏，在接合材料51上搭载有电子构件5的状态下，对接合材料51进行加热而使其融化。
接下来，如图6所示，将半导体元件1用接合材料2接合到散热板31。接合材料2是使银(Ag)填料分散于环氧树脂而成的导电性粘接剂。在将半导体元件1经由接合材料2配置于散热板31的状态下，在150℃下加热2小时，从而进行接合。
接下来，如图7所示，通过导线键合将半导体元件1的输入侧的上表面电极91和导电图案331用导线即布线部件41接合。另外，通过导线键合将半导体元件1的输出侧的上表面电极92和导电图案332用导线即布线部件42接合。
接下来，如图8所示，通过分配器将环氧树脂作为第1密封材料71供给给开口部8。通过在130℃下加热1.5小时，环氧树脂固化。其结果，开口部8以及半导体元件1被第1密封材料71密封。
接下来，如图9所示，从第1密封材料71的外侧将硅酮凝胶作为第2密封材料72涂敷到半导体元件周边。通过在130℃下加热30分钟，硅酮凝胶固化。其结果，半导体元件1从第1密封材料71的外侧被第2密封材料72密封。另外，布线部件4被第2密封材料72密封。
最后，以覆盖半导体元件1、布线部件4、电子构件5等的方式，将盖部6用粘接剂61粘接到导电层33。通过在120℃下加热1小时，粘接剂61固化。经由以上的制造工序，得到图3所示的半导体装置。
<效果>
本实施方式2中的半导体装置还具备散热板31，在散热板31的一方主面接合绝缘层32的另一方主面，在散热板31的一方主面，设置有散热板31未被绝缘层32覆盖的开口部8，在开口部8，半导体元件1的下表面与散热板31的一方主面接合，第1密封材料71对半导体元件1的至少一部分以及开口部8进行密封。
在本实施方式2中的半导体装置，成为在散热板31上直接接合有半导体元件1的构造。因此，在制造工序中的管芯结合工序以及可靠性评价中的温度循环时，由于半导体元件1与散热板31之间的热膨胀系数的错配，在管芯结合部(即接合半导体元件1和散热板31的接合材料2)产生大的热应力。作为结果，有可能在管芯结合部产生破裂等而散热性劣化。
例如，在仅用硅酮凝胶对从开口部8内部至布线部件4进行了密封的情况下，硅酮凝胶相对软，所以保持半导体元件1以及接合部2的力小，无法抑制接合部2的劣化。
另外，例如在仅用环氧树脂对从开口部8内部至布线部件4进行了密封的情况下，与构成散热板31的Cu的热膨胀系数相应地调整的环氧树脂的热膨胀系数是15ppm/K以上且20ppm/K以下。另一方面，构成绝缘层32的玻璃环氧的厚度方向的热膨胀系数约为60ppm/K，所以在温度循环时在环氧树脂和玻璃环氧的界面处易于发生剥离。由于剥离向热应力大的剥离部分的外侧传递，与导电层33表面接合的布线部件4受到损害的可能性高。进而，在热冲击试验、断续通电试验等可靠性试验中，在环氧树脂与导电层33之间也发生环氧树脂的剥离，所以确认了难以实现半导体装置的长寿命化。一般的环氧树脂由于与由Au等形成的导电层33的密接性不那么好，所以可以认为由于在上述可靠性试验中连续地施加的热应力而发生了剥离。而且，环氧树脂具有高的杨氏模量，与布线部件4的密接性相对良好，所以在环氧树脂从导电层33剥离时会一起使布线部件4抬起。这在如实施方式1那样没有开口部8的构造下也是同样的，在以使布线部件4的端部成为始点或者终点的方式用环氧树脂覆盖时，以处于其正下的导电层33为起点而发生环氧树脂的剥离。
在本实施方式2中，如图3所示，用相对硬的第1密封材料71对基体板3的开口部8内进行密封，用相对软的第2密封材料72对比开口部8靠外侧的布线部件4进行密封。易于受到由于半导体元件1与散热板31之间的热膨胀系数差而产生的热应力的影响的接合材料2通过相对硬的第1密封材料71而被强化。另外，通过用相对软的第2密封材料72对布线部件4进行密封，即使在基体板3产生了翘曲的情况下，也能够对布线部件4进行防尘并且能够减少针对布线部件4的热应力。因此，能够提高半导体装置的可靠性。
另外，在本实施方式2中的半导体装置的开口部8，绝缘层32的一方主面即绝缘层32的上表面被配置为比半导体元件1的上表面高。通过将绝缘层32的上表面配置为比半导体元件1的上表面高，第1密封材料71不会从开口部8大幅凸起，而能够用第1密封材料71对半导体元件1妥当地进行密封。
另外，在本实施方式2中的半导体装置，绝缘层32是玻璃环氧，第1密封材料71是环氧树脂。环氧树脂与玻璃环氧的密接性高，所以第1密封材料71在开口部8良好地粘接到绝缘层32的侧面32a。作为结果，能够抑制由于在制造工序中的管芯结合工序、可靠性评价中的温度循环等中产生的热应力、翘曲而第1密封材料71从散热板31剥离。
另外，在本实施方式2中的半导体装置，第1密封材料71是环氧树脂，第2密封材料72是硅酮凝胶。一般而言，与硅酮凝胶相比环氧树脂的热传导率高，所以通过用环氧树脂对半导体元件1进行密封，半导体装置的散热性提高。
另外，在本实施方式2中的半导体装置，接合半导体元件1和散热板31的接合材料2是导电性树脂，导电性树脂包含环氧树脂、丙烯酸树脂、硅酮橡胶中的任意材料和金属填料。作为接合半导体元件1和散热板31的接合材料2，也可以使用包含Ag、Au、Cu等的金属填料的导电性粘接剂。在使用导电性粘接剂时的圆角(fillet)部的表面，不仅存在金属填料，还存在环氧、硅酮、丙烯酸树脂，与焊料圆角相比，与第1密封材料71的密接性更优。因此，第1密封材料71能够更稳固地保持接合材料2，能够进一步提高半导体装置的可靠性。
另外，在本实施方式2中的半导体装置，接合半导体元件1和散热板31的接合材料2也可以是烧结性接合材料。另外，接合材料2的表面也可以是多孔形状。
作为接合半导体元件1和散热板31的接合材料2，也可以使用将微米尺寸的金属粒子、纳米尺寸的金属粒子或者微米尺寸和纳米尺寸的金属粒子混合于溶剂而成的烧结金属膏。烧结金属(例如Ag、Au、Cu等的)膏与导电性粘接剂同样地能够在约200℃以下的低温下管芯结合，而且在烧结后金属粒子彼此烧结接合，成为接近金属块体的状态，所以能够得到非常高的接合性、导热性以及耐热性。作为结果，能够提高175℃以上的高温动作中的可靠性。另外，在使用金属烧结材料时的圆角部的表面，形成作为在烧结时挥发的溶剂脱离后的痕迹的许多空穴，圆角部成为多孔构造。因此，被注入到基体板3的开口部8内的第1密封材料71渗入圆角部的空穴，由于锚效应而密接性提高。因此，第1密封材料71能够更稳固地保持接合材料2，能够进一步提高半导体装置的可靠性。
另外，关于上述烧结金属膏，有在烧结时需要加压的类型和无需加压的类型。关于需要加压的类型，由于无法用加压装置直接对芯片形状的半导体元件1的表面进行加压，所以需要在半导体元件1与加压装置的加压部之间设置缓冲材料。另外，即使在半导体元件1的表面附着了少量的异物，都会成为半导体元件1的损伤的原因，所以需要加压的类型不那么适合表面纤细的高频半导体元件用的接合材料2。另一方面，关于无需加压的类型的烧结金属膏，在进行临时烧结时，膏的粘着性消失，比加压类型小的接合强度更进一步变小，所以最好通过一次的加热使烧结完成。
<实施方式3>
图10是本实施方式3中的半导体装置的剖面图。图11是本实施方式3中的半导体装置的俯视图。图10所示的半导体装置的剖面是沿着图11的线段C-C的剖面。此外，在图11中，为了使附图易于理解，用虚拟线记载了第2密封材料72以及盖部6。
在本实施方式3中，也与实施方式2同样地，基体基板3的开口部8被第1密封材料71密封。在本实施方式3中，进而，如图10所示，开口部8被第1密封材料71填充至绝缘层32的一方主面(即上表面)的高度以上。此外，第1密封材料71也可以被配置为与导电层33的侧面接触但不与导电层33的上表面接触。
图12是示出本实施方式3中的半导体装置的变形例的剖面图。如图12所示，第2密封材料72也可以以被分割的形状配置。在该情况下，在制造工序中，第2密封材料72被分成2次而涂敷。第2密封材料72被分成2次而涂敷，从而能够减少每次的涂敷量，所以易于进行用于对布线部件4妥当地进行密封的涂敷量的调整。
此外，作为本实施方式3的半导体装置以及本实施方式3的变形例的半导体装置的其他结构与实施方式2的半导体装置相同，所以省略说明。
<效果>
在本实施方式3中的半导体装置，开口部8被第1密封材料71填充至绝缘层32的一方主面的高度以上。由此，第1密封材料71和绝缘层32的侧面32a的接触面积增大，所以第1密封材料71和散热板31的密接性提高，能够进一步提高半导体装置的可靠性。特别是在将绝缘层32设为玻璃环氧、将第1密封材料71设为环氧树脂的情况下。环氧树脂与玻璃环氧的密接性高，所以第1密封材料71在开口部8良好地粘接到绝缘层32的侧面32a。因此，第1密封材料71和散热板31的密接性进一步提高，能够进一步提高半导体装置的可靠性。
为了确认本实施方式3中的密接性提高的效果，进行了树脂密接强度试验(即布丁杯试验)。在树脂密接强度试验中，将不锈钢制的杯(直径6mm、高度4mm)搭载到用Ni或者Au对表面进行镀敷后的铜板并涂敷环氧树脂，将由此得到的样品作为第1样品。另外，将不锈钢制的杯搭载到玻璃环氧板并涂敷环氧树脂，将由此得到的样品作为第2样品。各样品的环氧树脂在推荐的条件下被固化。在室温下和150℃的环境下分别进行第1样品的剪切试验，结果是剪切强度是20kg和10kg。另外，在室温下和150℃的环境下分别进行第2样品的剪切试验，结果是剪切强度是42kg和38kg。根据上述结果可知，环氧树脂的与玻璃环氧板的密接性是与铜板的密接性的2倍以上。另外，可知在150℃这样的高温环境下仍维持了高的密接性。通过上述试验，能够确认能够通过增加作为第1密封材料71的环氧树脂和作为绝缘层32的玻璃环氧的接触面积而提高半导体装置的可靠性。
<实施方式4>
图13是本实施方式4中的半导体装置的剖面图。图14是本实施方式4中的半导体装置的俯视图。图13所示的半导体装置的剖面是沿着图14的线段D-D的剖面。此外，在图14中，为了使附图易于理解，用虚拟线记载了第2密封材料72以及盖部6。
在本实施方式4中，也与实施方式2同样地，基体基板3的开口部8被第1密封树脂71密封。在本实施方式4中，第1密封材料71以不与布线部件4接触的方式对半导体元件1的一部分进行密封。另外，第2密封材料72对布线部件4的整体进行密封。
即，第1密封材料71被配置为可以与半导体元件1的侧面接触但不与半导体元件1的上表面接触。但是，只要第1密封材料71不与布线部件4的中空部分4a接触，则第1密封材料71也可以覆盖半导体元件1的上表面。另外，第2密封材料72只要至少与布线部件4的中空部分4a的整体接触即可。
另外，在处理高频信号的半导体装置，作为能够在半导体基板上成批形成有源元件和无源元件的MMIC(Monolithic Microwave Integrated Circuit，单片微波集成电路)的一般的结构之一，已知有共面线型MMIC。在共面线型MMIC，有时在半导体元件1的表面配置几μm左右的微细的气桥。如后述图19所示，半导体元件1在上表面的电极91、电极92之间设置有气桥存在区域100。在该气桥存在区域100的上方设置有气桥。考虑用如环氧树脂那样的硬的树脂覆盖作为布线构造之一的气桥的情况。在该情况下，有可能由于固化后的环氧树脂的硬度或者在固化收缩时产生的环氧树脂的应力而微细的气桥被破坏。
因此，如图14所示，第1密封材料71优选并非覆盖半导体元件1的表面的整个面，而是以不与气桥接触的方式不与半导体元件1的上表面接触而对半导体元件1的一部分进行密封。
此外，本实施方式4的半导体装置的其他结构与实施方式2的半导体装置相同，所以省略说明。
<效果>
在本实施方式4中的半导体装置，第1密封材料71以不与布线部件4的中空部分4a接触的方式对半导体元件1的至少一部分进行密封，第2密封材料72与布线部件4的中空部分4a的整体接触。
在硬的密封材料和软的密封材料接触的界面处，在温度循环试验以及功率循环试验时，密封材料的杨氏模量以及热膨胀的差所引起的应力有可能集中。另外，虽然硬的密封材料和软的密封材料粘接，但在界面处来自外气的吸湿量增加。有可能由于大量的吸湿而导线劣化，成为使导线断线加快的原因。在本实施方式4中，第2密封材料72与布线部件的中空部分4a接触。即，第1密封材料71和第2密封材料72的界面不与布线部件4的中空部分4a接触，所以能够抑制应力所引起的布线部件4的断线。另外，能够抑制湿气所引起的布线部件4的劣化。进而，用软的第2密封材料72对布线部件4的中空部分4a的整体进行密封，所以能够缓和布线部件4受到的应力的影响，能够进一步提高半导体装置的可靠性。
<实施方式5>
图15是本实施方式5中的半导体装置的俯视图。此外，在图15中，为了使附图易于理解，用虚拟线记载了第2密封材料72以及盖部6。在实施方式2中，用第1密封材料71对基体基板3的开口部8整体进行密封。
另一方面，在本实施方式5中，如图15所示，半导体元件1在俯视时是长方形形状，半导体元件1的四角以及相互相向的短边被第1密封材料71密封。另外，第1密封材料71也与接近半导体元件1的短边的绝缘层32的侧面32a接触，第1密封材料71具有充分的密接强度。此外，在本实施方式5中，也与实施方式4同样地，第1密封材料71最好配置为不与布线部件4的中空部分4a接触。
如图15所示，开口部8的未被密封材料71密封的部分被第2密封材料72密封。另外，布线部件4也被第2密封材料72密封。本实施方式5的半导体装置的其他结构与实施方式2的半导体装置相同，所以省略说明。
<效果>
在本实施方式5中，半导体元件1在俯视时是长方形形状，第1密封材料71对半导体元件1的四角进行密封，第1密封材料71沿着在俯视时2组相向的边中的某一组相向的边延伸。
因此，通过第1密封材料71对半导体元件1的四角以及2组相向的边中的某一组相向的边进行密封，与用第1密封材料71对半导体元件1的整体进行密封的情况相比，能够用更少的密封材料使半导体元件1相对散热板31密接而固定。
一般而言，在制造工序中在使环氧树脂等树脂流入到基板的凹部时易于卷入空气。因此，有可能在环氧树脂固化之后在密封部分的内部形成孔隙即气泡。作为其对策，例如能够通过将基板预先加热而降低树脂的粘度来抑制空气的卷入。另外，通过追加抽真空的机构，能够在固化前去除孔隙。然而，不论是哪种对策都会需要设备改造所带来的追加的设备投资以及制造工序的追加。因此，如本实施方式5那样，仅在开口部8内的必要最低限度的部位配置第1密封材料71，从而能够大幅减少用于密封的第1密封材料71的量。通过减少配置的第1密封材料71的量，无需追加的设备投资以及制造工序的追加而能够减小在第1密封材料71中形成孔隙的可能性。
另外，在本实施方式5中的半导体装置，第1密封材料71沿着半导体元件1的在俯视时2组相向的边中的边长更短的组的相向的边延伸。如图15所示，在沿着相互相向的短边配置有第1密封材料71的情况下，与沿着相互相向的长边配置有第1密封材料71的情况相比，配置的第1密封材料71的量少。因此，能够进一步减小在第1密封材料71的内部产生孔隙的可能性。另外，由于产生应力的半导体元件1的四角被第1密封材料71覆盖，所以半导体装置的可靠性也被充分地确保。
<实施方式6>
图16是本实施方式6中的半导体装置的俯视图。此外，在图16中，为了使附图易于理解，用虚拟线记载了第2密封材料72以及盖部6。在实施方式5中，半导体元件1的四角以及相互相向的短边被第1密封材料71密封。另一方面，在本实施方式6中，半导体元件1的四角以及相互相向的长边被第1密封材料71密封。本实施方式6的半导体装置的其他结构与实施方式5的半导体装置相同，所以省略说明。
<效果>
在本实施方式6中的半导体装置，第1密封材料71沿着半导体元件1的在俯视时2组相向的边中的边长更长的组的相向的边延伸。在本实施方式6中，用第1密封材料71密封相互相向的长边而并非密封相互相向的短边，从而能够用少量的第1密封材料71更稳固地保持半导体元件1以及接合材料2。因此，能够同时实现使在第1密封材料71的内部发生孔隙的可能性减小和半导体装置的高可靠性。
<实施方式7>
图17是本实施方式7中的半导体装置的俯视图。图18是本实施方式7中的半导体装置的剖面图。图18所示的半导体装置的剖面是沿着图17的线段E-E的剖面。此外，在图17中，为了使附图易于理解，用虚拟线记载了第2密封材料72以及盖部6。另外，图19是示意地示出气桥存在区域100的俯视图。在图19中，省略了第1密封材料71的图示。
在实施方式5中，半导体元件1的四角以及相互相向的短边被第1密封材料71密封，在实施方式6中，半导体元件1的四角以及相互相向的长边被第1密封材料71密封。另一方面，在本实施方式7中，仅半导体元件1的四角被第1密封材料71密封。
即，在实施方式7的半导体装置，半导体元件1在俯视时是长方形形状，第1密封材料71对半导体元件1的四角进行密封，第1密封材料71在半导体元件1的四角的各个角离散地存在于4个部位。
第1密封材料71以使半导体元件1的四角的各个角不露出的方式密封。另外，第1密封材料71仅对必要最低限度的半导体元件1的四角进行密封，所以第1密封材料71需要与半导体元件1、接合材料2、开口部8的内部的散热板31可靠地接触。
另一方面，为了尽可能防止高频特性的劣化，第1密封材料71优选以不与图19所示的气桥存在区域100接触的方式被密封。实施方式7的第1密封材料71在四角的各个角离散地形成，所以不会接触到上表面电极91、上表面电极92之间的气桥存在区域100而能够利用第1密封材料71对半导体元件1进行密封。
另外，用于高频半导体装置的半导体元件1经常为长方形的形状，与正方形相比，关于形成接合材料2的管芯结合处理后的半导体元件1，易于沿着长度方向发生倾斜。
图20是作为本实施方式7的变形例的半导体装置的俯视图。图21是作为本实施方式7的变形例的半导体装置的剖面图。图21所示的半导体装置的剖面是沿着图20的线段F-F的剖面。此外，在图20中，为了使附图易于理解，用虚拟线记载了第2密封材料72以及盖部6。实施方式7的变形例是以半导体元件1沿着长度方向倾斜的情况为前提的构造。
如图20以及图21所示，接合材料2呈被设置为半导体元件1的在俯视时2组相向的边中的边长更短的组的相向的一边侧的膜厚比另一边侧的膜厚薄的构造。即，在实施方式7的变形例中，以接合材料2被设置为俯视半导体元件1时相向的短边中的一短边侧的膜厚比另一短边侧的膜厚薄的构造作为前提。
在本实施方式7中，通过分配装置，在半导体元件1的4角分离地形成有第1密封材料71。即，通过2个第1密封材料711、711以及2个第1密封材料712、712构成第1密封材料71。另外，如图21所示，与半导体元件1的倾斜对应地使涂敷量在第1密封材料711、第1密封材料712之间变化。
如图20以及图21所示，在半导体元件1的四角中，在作为管芯结合层的接合材料2形成得相对薄的两角，设置有成为形成量的涂敷量相对多的第1密封材料712，在接合材料2形成得相对厚的两角，设置有涂敷量相对少的第1密封材料711。
这样，实施方式7的变形例的特征在于，接合材料2形成得相对薄的一短边的两角的第1密封材料712的成为形成量的涂敷量大于接合材料2形成得相对厚的另一短边的两角的第1密封材料711的涂敷量。即，在实施方式7的变形例中，包括2个第1密封材料711以及2个第1密封材料712的第1密封材料71被设置成一短边侧的两角的形成量大于另一边侧的两角的形成量。
其结果，能够相对在第1密封材料711、第1密封材料712之间施加到接合材料2的热应力取得整体的平衡。另外，最好第1密封材料711、第1密封材料712的高度比绝缘层31的形成高度低而收敛于开口部8内。由于施加到接合材料2的应力根据各部件的物性、尺寸而不同，所以能够使用模拟等事先预计大致的应力，通过实际装置中的试验准确地预测施加到接合材料2的应力之后，在各角根据接合材料2的厚度在制造前决定第1密封材料711、第1密封材料712各自的涂敷量。
实施方式7的半导体装置的其他结构与实施方式5以及实施方式6的半导体装置相同，所以省略说明。
<效果>
用于高频半导体装置的半导体元件在俯视时经常为长方形的形状，与正方形的情况相比，在形成接合材料2的管芯结合处理后易于沿着半导体元件1的长度方向发生倾斜。因此，如上所述，作为管芯结合层的接合材料2的厚度也会在半导体元件1的四角处发生偏差。一般而言，在接合材料2的膜厚厚时，应力缓和性变大，在接合材料2的膜厚薄时，应力缓和性变小。因此，在半导体元件1的四角的接合材料2的膜厚发生偏差时，四角处的相对热冲击试验等的可靠性也发生偏差，接合材料2从最弱的角劣化，作为可靠性也取决于最弱的角。
因此，如图21所示，通过与半导体元件1的倾斜即接合材料2的膜厚对应地改变第1密封材料711、第1密封材料712的作为形成量的涂敷量来设定，能够使四角的应力缓和均匀化，所以能够得到高的可靠性。
此外，在实施方式7中，在半导体元件1的4角分别分离地设置有第1密封材料71。因此，在以俯视半导体元件1时相向的4角分别以不同的膜厚设置接合材料2的构造为前提的情况下，能够与接合材料2的膜厚对应地改变半导体元件1的四角各自处的第1密封材料71的涂敷量来设定。其结果，实施方式7的半导体装置即使在4角处分别以不同的膜厚设置接合材料2的情况下，也能够使接合材料2的四角的应力缓和均匀化。
此外，在实施方式1至实施方式7的各个实施方式中，第1密封材料71也可以以与半导体元件1直接接触的方式对半导体元件1的至少一部分进行密封。另外，第2密封材料72也可以以与布线部件4直接接触的方式对布线部件4进行密封。此外，本发明能够在该发明的范围内自由地组合各实施方式、将各实施方式适当地变形、省略。
虽然详细说明了本发明，但上述说明在所有方案中为例示，本发明不限于此。被理解为不脱离本发明的范围而预计有未例示的无数的变形例。

Claims (21)

1.一种半导体装置，具备：
绝缘层；
导电层，与所述绝缘层的一方主面接合；以及
半导体元件，配置为上表面朝向与所述绝缘层的所述一方主面相同的方向，
在所述半导体元件的所述上表面设置有上表面电极，
还具备：
具有中空部分的布线部件，一端与所述半导体元件的所述上表面电极电接合，另一端与所述导电层电接合；
第1密封材料；以及
第2密封材料，比所述第1密封材料软，
所述第1密封材料以与所述半导体元件接触的方式密封所述半导体元件的至少一部分，
所述第2密封材料以与所述布线部件接触的方式密封所述布线部件。
2.根据权利要求1所述的半导体装置，其中，
所述半导体装置还具备散热板，
在所述散热板的一方主面，接合有所述绝缘层的另一方主面，
在所述散热板的所述一方主面，设置有所述散热板未被所述绝缘层覆盖的开口部，
在所述开口部，所述半导体元件的下表面与所述散热板的所述一方主面接合，
所述第1密封材料密封所述半导体元件的至少一部分以及所述开口部。
3.根据权利要求2所述的半导体装置，其中，
所述开口部被所述第1密封材料填充至所述绝缘层的所述一方主面的高度以上。
4.根据权利要求3所述的半导体装置，其中，
在所述开口部，所述绝缘层的所述一方主面被配置成比所述半导体元件的所述上表面高。
5.根据权利要求1至4中的任意一项所述的半导体装置，其中，
所述第1密封材料以不与所述布线部件的所述中空部分接触的方式密封所述半导体元件的至少一部分，
所述第2密封材料与所述布线部件的所述中空部分的整体接触。
6.根据权利要求1至4中的任意一项所述的半导体装置，其中，
所述布线部件的与所述第2密封材料接触的面积大于所述布线部件的与所述第1密封材料接触的面积。
7.根据权利要求1至4中的任意一项所述的半导体装置，其中，
所述第1密封材料以不与所述半导体元件的所述上表面接触的方式密封所述半导体元件的一部分。
8.根据权利要求1至7中的任意一项所述的半导体装置，其中，
所述布线部件是导线。
9.根据权利要求1至8中的任意一项所述的半导体装置，其中，
所述第2密封材料的弯曲弹性模量小于所述第1密封材料的弯曲弹性模量。
10.根据权利要求1至9中的任意一项所述的半导体装置，其中，
所述绝缘层是玻璃环氧，
所述第1密封材料是环氧树脂。
11.根据权利要求1至10中的任意一项所述的半导体装置，其中，
所述第1密封材料是环氧树脂，
所述第2密封材料是硅酮凝胶。
12.根据权利要求2至4中的任意一项所述的半导体装置，其中，
接合所述半导体元件和所述散热板的接合材料是导电性树脂，
所述导电性树脂包含环氧树脂、丙烯酸树脂、硅酮中的任意材料和金属填料。
13.根据权利要求2至4中的任意一项所述的半导体装置，其中，
接合所述半导体元件和所述散热板的接合材料是烧结性接合材料。
14.根据权利要求2至4中的任意一项所述的半导体装置，其中，
接合所述半导体元件和所述散热板的接合材料的表面是多孔形状。
15.根据权利要求1至14中的任意一项所述的半导体装置，其中，
所述半导体元件在俯视时是长方形形状，
所述第1密封材料密封所述半导体元件的四角，
所述第1密封材料在所述半导体元件的四角的各个角离散地存在。
16.根据权利要求2至4中的任意一项所述的半导体装置，其中，
所述半导体装置还具备接合所述半导体元件和所述散热板的接合材料，
所述半导体元件在俯视时是长方形形状，
所述第1密封材料密封所述半导体元件的四角，
所述接合材料被设置成所述半导体元件的在俯视时2组相向的边中的边长更短的组的相向的一边侧的膜厚比另一边侧的膜厚薄，
所述第1密封材料被设置成所述一边侧的两角的形成量大于所述另一边侧的两角的形成量。
17.根据权利要求1至14中的任意一项所述的半导体装置，其中，
所述半导体元件在俯视时是长方形形状，
所述第1密封材料密封所述半导体元件的四角，
所述第1密封材料沿着所述半导体元件的在俯视时2组相向的边中的某一组相向的边延伸。
18.根据权利要求17所述的半导体装置，其中，
所述第1密封材料沿着所述半导体元件的在俯视时2组相向的边中的边长更短的组的相向的边延伸。
19.根据权利要求17所述的半导体装置，其中，
所述第1密封材料沿着所述半导体元件的在俯视时2组相向的边中的边长更长的组的相向的边延伸。
20.根据权利要求1至19中的任意一项所述的半导体装置，其中，
所述半导体元件是进行高频信号的放大或者开关的元件。
21.根据权利要求20所述的半导体装置，其中，
所述半导体元件以宽能带隙半导体作为材料。
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