CN106206330B - 一种应用于电动汽车电控产品的针脚式功率单管集成结构 - Google Patents

一种应用于电动汽车电控产品的针脚式功率单管集成结构 Download PDF

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CN106206330B
CN106206330B CN201610727753.1A CN201610727753A CN106206330B CN 106206330 B CN106206330 B CN 106206330B CN 201610727753 A CN201610727753 A CN 201610727753A CN 106206330 B CN106206330 B CN 106206330B
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王伟毅
孙儒文
王文杰
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/81201—Compression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/81238—Applying energy for connecting using electric resistance welding, i.e. ohmic heating

Abstract

本发明公开了一种应用于电动汽车电控产品的针脚式功率单管集成方案，涉及新能源汽车技术领域，先将针脚式功率器件通过压片或压条压接到金属载板上，所述功率器件与所述金属载板之间设有绝缘导热垫片；再将所述功率单管的针脚和母线电容焊接于厚铜PCB上；最后，将集成有厚铜PCB的金属载板压接到散热冷板上，所述金属载板和所述散热冷板之间涂有导热硅脂。与封装式功率模块相比，价格低廉，设计灵活性大大提高，功率单管针脚选择焊或波峰焊可行性大大增加，重量轻且产品热容小，焊接质量高；功率单管的热量可以向金属载板横向扩散，有效增加散热面积，降低系统热阻。

Description

一种应用于电动汽车电控产品的针脚式功率单管集成结构
技术领域
本发明涉及新能源汽车技术领域，尤其是一种应用于电动汽车电控产品的针脚式功率单管集成结构。
背景技术
现有技术中，应用于电动汽车电控产品的针脚式功率单管集成结构有： 1.使用封装好的功率模块与母线电容连接构成主电路，缺点是封装式功率模块价格高，变形设计难；2.将针脚式功率单管压接到散热冷板后，将针脚插入PCB板电气孔，通过螺丝将PCB板固定到散热冷板，在功率单管被遮挡的状态下对针脚进行选择焊，实现与PCB板的电气连接，缺点是选择焊失效率高，针脚式功率单管焊接后，不便于检测焊点及锡珠，并且功率单管压接到散热冷板后，对针脚进行选择焊，存在选择焊设备难以承受产品重量，产品热容过大，虚焊严重的问题；3.将针脚式功率单管压接到金属板工装，在功率单管被遮挡的状态下对针脚进行选择焊，取下金属板工装，将挂有大量功率单管的PCB板压接到散热冷板，缺点是功率单管存在两次折弯，对针脚产生损伤，同时焊接后，功率单管与PCB板相对位置固定，难以缓冲散热冷板接触面的平面度公差，有散热不良风险；4.不使用PCB板，将功率单管焊接到铜排上，通过铜排与母线电容进行连接，缺点是工艺复杂，寄生电感大。
发明内容
针对上述问题，本发明提供一种应用于电动汽车电控产品的针脚式功率单管集成结构。
一种应用于电动汽车电控产品的针脚式功率单管集成结构，先将针脚式功率器件通过压片或压条压接到金属载板上，所述功率器件与所述金属载板之间设有绝缘导热垫片；再将所述功率器件的针脚和母线电容焊接于厚铜PCB 上；最后，将集成有厚铜PCB的金属载板压接到散热冷板上，所述金属载板和所述散热冷板之间涂有导热硅脂。
进一步的，所述金属载板在功率单管针脚处开有观察窗，便于观察针脚与所述厚铜PCB的焊接情况。
进一步的，所述金属载板采用高导热率的金属板。
进一步的，所述功率单管包括上半桥功率单管和下半桥功率单管，所述上、下半桥功率单管交错分布，同时通过PCB板的正负母线交错层叠布置；所述母线电容就近设置于所述交错分布的上、下半桥功率单管周围；所述母线电容向下布置，置于所述厚铜PCB板与所述散热冷板之间的独立腔体内。
本发明的有益效果：与封装式功率模块相比，价格低廉，设计灵活性大大提高，功率单管针脚选择焊或波峰焊可行性大大增加，重量轻且产品热容小，焊接质量高，通过观察窗可观察焊接情况；厚铜PCB的正负母线多层叠层走线以及上、下半桥功率单管的交错分布，缩短换流回路，实现系统的极低电感；功率单管的热量可以向金属载板横向扩散，有效增加散热面积，降低系统热阻。
附图说明
图1为本发明的结构示意图；
图2为金属载板观察窗的设置示意图；
图3为上、下半桥功率单管的一种交错分布形式；
图4为上、下半桥功率单管的另一种交错分布形式。
具体实施方式
下面结合附图和具体实施方式对本发明作进一步详细的说明。本发明的实施例是为了示例和描述起见而给出的，而并不是无遗漏的或者将本发明限于所公开的形式。很多修改和变化对于本领域的普通技术人员而言是显而易见的。选择和描述实施例是为了更好说明本发明的原理和实际应用，并且使本领域的普通技术人员能够理解本发明从而设计适于特定用途的带有各种修改的各种实施例。
实施例1
一种应用于电动汽车电控产品的针脚式功率单管集成结构，如图1所示，先将针脚式功率器件通过压片或压条压接到金属载板102上，所述功率器件与所述金属载板102之间设有绝缘导热垫片103；再将所述功率器件的针脚和母线电容104焊接于厚铜PCB 105上；最后，将集成有厚铜PCB的金属载板压接到散热冷板106上，所述金属载板102和所述散热冷板106之间涂有导热硅脂107。
与封装式功率模块相比，价格低廉，设计灵活性大大提高，功率单管针脚选择焊或波峰焊可行性大大增加，重量轻且产品热容小，焊接质量高；功率单管的热量可以向金属载板横向扩散，有效增加散热面积，降低系统热阻。
所述金属载板102在功率单管针脚处开有观察窗1021，如图2所示，便于观察针脚与所述厚铜PCB的焊接情况；所述金属载板采用金属铜载板等高导热介质。
所述功率单管包括上半桥功率单管1011和下半桥功率单管1012，所述上、下半桥功率单管交错分布，如图3或图4所示，同时通过PCB板的正负母线交错层叠布置，缩短换流回路，实现系统的极低电感。
所述母线电容104就近设置于所述交错分布的上、下半桥功率单管周围，最大限度降低寄生电容，省去了焊接母线电容的PCB板与铝基板的复杂连接，降低了成本，同时提高了抗震等级。
所述母线电容104向下布置，置于所述厚铜PCB板105与所述散热冷板 106之间的独立腔体内，隔离于功率单管的高发热区域。
显然，所描述的实施例仅仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域及相关领域的普通技术人员在没有作出创造性劳动的前提下所获得的所有其他实施例，都应属于本发明保护的范围。

Claims (4)

1.一种应用于电动汽车电控产品的针脚式功率单管集成结构，其特征在于：先将针脚式功率器件通过压片或压条压接到金属载板上，所述功率器件与所述金属载板之间设有绝缘导热垫片；再将所述功率器件的针脚和母线电容焊接于厚铜PCB上；最后，将集成有厚铜PCB的金属载板压接到散热冷板上，所述金属载板和所述散热冷板之间涂有导热硅脂；
所述功率单管包括上半桥功率单管和下半桥功率单管，所述上、下半桥功率单管交错分布，同时通过PCB板的正负母线交错层叠布置；所述母线电容就近设置于所述交错分布的上、下半桥功率单管周围。
2.根据权利要求1所述的应用于电动汽车电控产品的针脚式功率单管集成结构，其特征在于：所述金属载板在功率单管针脚处开有观察窗，便于观察针脚与所述厚铜PCB的焊接情况。
3.根据权利要求1所述的应用于电动汽车电控产品的针脚式功率单管集成结构，其特征在于：所述金属载板采用高热导率的金属板。
4.根据权利要求1所述的应用于电动汽车电控产品的针脚式功率单管集成结构，其特征在于：所述母线电容向下布置，置于所述厚铜PCB板与所述散热冷板之间的独立腔体内。
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