JP7170272B2 - パワー基板とそれを備えた高電圧モジュール - Google Patents
パワー基板とそれを備えた高電圧モジュール Download PDFInfo
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- JP7170272B2 JP7170272B2 JP2019061598A JP2019061598A JP7170272B2 JP 7170272 B2 JP7170272 B2 JP 7170272B2 JP 2019061598 A JP2019061598 A JP 2019061598A JP 2019061598 A JP2019061598 A JP 2019061598A JP 7170272 B2 JP7170272 B2 JP 7170272B2
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- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
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- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0254—High voltage adaptations; Electrical insulation details; Overvoltage or electrostatic discharge protection ; Arrangements for regulating voltages or for using plural voltages
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- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Inverter Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
101・・・パワー基板
102・・・ゲートドライブ基板
103・・・電源基板
104・・・制御ユニット
105・・・樹脂
106・・・絶縁基板
106a・・・溝
107・・・導電層
108・・・MOSトランジスタ
109・・・はんだ接合層
110・・・放熱部材
111・・・抵抗体
112・・・ゲート駆動回路素子
113・・・配線
114・・・絶縁部材
115・・・一次コイル
116・・・二次コイル
117・・・配線
118・・・CPLD基板
119・・・O/E基板
120・・・光送信部
121・・・光受信部
122・・・光ファイバー
123・・・配線
P、P1、P2、P3・・・電流経路
Claims (4)
- 単一のパワー基板であって、
同一方向に延在する複数の電流経路に沿って、並んで配置された複数の絶縁基板と、
複数の前記絶縁基板の一方の主面に、第一導電層、第一はんだ接合層を介して複数搭載されたMOSトランジスタと、
全ての前記絶縁基板の他方の主面に、第二導電層、第二はんだ接合層を介して接触した単一の放熱部材と、を備え、
一つ一つの前記電流経路は、異なる前記絶縁基板に搭載された単数または複数の前記MOSトランジスタ同士が、直列に接続されてなることを特徴とするパワー基板。 - 隣接する前記絶縁基板同士の間に抵抗体が設けられ、前記抵抗体が、前記MOSトランジスタに対して並列に接続されていることを特徴とする請求項1に記載のパワー基板。
- 請求項1に記載されたパワー基板と、
前記MOSトランジスタのゲート駆動回路素子を複数搭載したゲートドライブ基板と、
絶縁部材を挟んで両側にコイルを複数備えてなる電源基板と、
複数の前記ゲート駆動回路素子のオン/オフを同時に制御する制御ユニットと、を順に積層してなり、
前記MOSトランジスタと前記ゲート駆動回路素子、前記ゲート駆動回路素子と前記コイル、前記ゲート駆動回路素子と前記制御ユニットが、電気的に接続されていることを特徴とする高電圧モジュール。 - 前記制御ユニットが、
前記ゲート駆動回路素子に対し、オン/オフ制御用の光信号を送信するEO変換器を搭載したCPLD基板と、
前記光信号を受信し、電気信号に変換するOE変換器を備えたO/E基板と、を備え、
前記制御ユニットのうち前記OE変換器が、前記ゲート駆動回路素子と電気的に接続されていることを特徴とする請求項3に記載の高電圧モジュール。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019061598A JP7170272B2 (ja) | 2019-03-27 | 2019-03-27 | パワー基板とそれを備えた高電圧モジュール |
PCT/JP2020/013520 WO2020196699A1 (ja) | 2019-03-27 | 2020-03-26 | パワー基板とそれを備えた高電圧モジュール |
CN202080024766.7A CN113632216A (zh) | 2019-03-27 | 2020-03-26 | 功率基板及具备该功率基板的高电压模块 |
US17/442,404 US12022604B2 (en) | 2019-03-27 | 2020-03-26 | Power substrate and high-voltage module equipped with same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2019061598A JP7170272B2 (ja) | 2019-03-27 | 2019-03-27 | パワー基板とそれを備えた高電圧モジュール |
Publications (2)
Publication Number | Publication Date |
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JP2020161719A JP2020161719A (ja) | 2020-10-01 |
JP7170272B2 true JP7170272B2 (ja) | 2022-11-14 |
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JP2019061598A Active JP7170272B2 (ja) | 2019-03-27 | 2019-03-27 | パワー基板とそれを備えた高電圧モジュール |
Country Status (4)
Country | Link |
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US (1) | US12022604B2 (ja) |
JP (1) | JP7170272B2 (ja) |
CN (1) | CN113632216A (ja) |
WO (1) | WO2020196699A1 (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014061211A1 (ja) | 2012-10-15 | 2014-04-24 | 富士電機株式会社 | 半導体装置 |
WO2016199635A1 (ja) | 2015-06-08 | 2016-12-15 | ローム株式会社 | パワーモジュール半導体装置およびその製造方法、およびインバータ装置 |
JP2017103380A (ja) | 2015-12-03 | 2017-06-08 | ローム株式会社 | インテリジェントパワーモジュール、および電気自動車またはハイブリッドカー |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5559374A (en) * | 1993-03-25 | 1996-09-24 | Sanyo Electric Co., Ltd. | Hybrid integrated circuit |
JPH07161925A (ja) * | 1993-12-09 | 1995-06-23 | Mitsubishi Electric Corp | パワーモジュール |
DE69535775D1 (de) * | 1994-10-07 | 2008-08-07 | Hitachi Ltd | Halbleiteranordnung mit einer Mehrzahl von Halbleiterelementen |
US6060772A (en) * | 1997-06-30 | 2000-05-09 | Kabushiki Kaisha Toshiba | Power semiconductor module with a plurality of semiconductor chips |
JP3114966B2 (ja) * | 1997-07-22 | 2000-12-04 | シャープ株式会社 | 直流安定化電源装置 |
US6078501A (en) * | 1997-12-22 | 2000-06-20 | Omnirel Llc | Power semiconductor module |
US6212087B1 (en) * | 1999-02-05 | 2001-04-03 | International Rectifier Corp. | Electronic half bridge module |
US7012810B2 (en) * | 2000-09-20 | 2006-03-14 | Ballard Power Systems Corporation | Leadframe-based module DC bus design to reduce module inductance |
US6774465B2 (en) * | 2001-10-05 | 2004-08-10 | Fairchild Korea Semiconductor, Ltd. | Semiconductor power package module |
JP5130193B2 (ja) * | 2008-12-15 | 2013-01-30 | 日立オートモティブシステムズ株式会社 | 半導体素子駆動用集積回路及び電力変換装置 |
US8637964B2 (en) * | 2011-10-26 | 2014-01-28 | Infineon Technologies Ag | Low stray inductance power module |
KR101443985B1 (ko) * | 2012-12-14 | 2014-11-03 | 삼성전기주식회사 | 전력 모듈 패키지 |
KR102041644B1 (ko) * | 2014-01-08 | 2019-11-07 | 삼성전기주식회사 | 전력 모듈 패키지와 이의 제작방법 |
US9899328B2 (en) * | 2014-02-11 | 2018-02-20 | Mitsubishi Electric Corporation | Power semiconductor module |
JP2015162848A (ja) | 2014-02-28 | 2015-09-07 | 高橋 泰雄 | デジタル放送送信システム及びその方法並びに受信装置 |
JP6207460B2 (ja) * | 2014-05-19 | 2017-10-04 | 三菱電機株式会社 | 半導体装置 |
JP6112073B2 (ja) * | 2014-06-20 | 2017-04-12 | 株式会社豊田自動織機 | 半導体装置 |
DE112015005654T5 (de) * | 2014-12-18 | 2017-08-31 | Mitsubishi Electric Corporation | Isolierte Leiterplatte, Leistungsmodul und Leistungseinheit |
WO2016121159A1 (ja) * | 2015-01-26 | 2016-08-04 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
DE112016003111T5 (de) * | 2015-07-09 | 2018-04-12 | Mitsubishi Electric Corporation | Leistungs-halbleitermodul |
JP6605393B2 (ja) * | 2016-05-12 | 2019-11-13 | 株式会社日立製作所 | パワーモジュール、電力変換装置、及びパワーモジュールの製造方法 |
CN110494977B (zh) * | 2017-04-21 | 2023-04-18 | 三菱电机株式会社 | 电力用半导体模块、电子部件以及电力用半导体模块的制造方法 |
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- 2019-03-27 JP JP2019061598A patent/JP7170272B2/ja active Active
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- 2020-03-26 WO PCT/JP2020/013520 patent/WO2020196699A1/ja active Application Filing
- 2020-03-26 US US17/442,404 patent/US12022604B2/en active Active
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014061211A1 (ja) | 2012-10-15 | 2014-04-24 | 富士電機株式会社 | 半導体装置 |
WO2016199635A1 (ja) | 2015-06-08 | 2016-12-15 | ローム株式会社 | パワーモジュール半導体装置およびその製造方法、およびインバータ装置 |
JP2017103380A (ja) | 2015-12-03 | 2017-06-08 | ローム株式会社 | インテリジェントパワーモジュール、および電気自動車またはハイブリッドカー |
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JP2020161719A (ja) | 2020-10-01 |
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CN113632216A (zh) | 2021-11-09 |
US12022604B2 (en) | 2024-06-25 |
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