JP6895307B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 93
- 229910052751 metal Inorganic materials 0.000 claims description 162
- 239000002184 metal Substances 0.000 claims description 162
- 239000010949 copper Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 25
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 21
- 229910052802 copper Inorganic materials 0.000 claims description 18
- 230000017525 heat dissipation Effects 0.000 claims description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 2
- 230000008646 thermal stress Effects 0.000 description 31
- 230000001965 increasing effect Effects 0.000 description 9
- 229910000679 solder Inorganic materials 0.000 description 8
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000035882 stress Effects 0.000 description 3
- 229910001374 Invar Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000962 AlSiC Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Description
また、本発明の上記の目的及びその他の目的と新規な特徴は、本明細書の記述及び添付図面によって明らかにする。
そして、積層金属板は、第1金属層、第3金属層、及び、第1金属層と第3金属層に挟まれた第2金属層が積層されて形成される。さらに、第2金属層は、第1金属層及び第3金属層よりも厚く、かつ第1金属層及び第3金属層よりも熱膨張係数が小さい。
さらに、積層金属板の第1金属層に対する第2金属層の厚さは、5倍以上18倍以下であり、積層金属板の厚さは、0.3mm以上1.0mm以下であり、積層金属板の第1金属層は銅、第2金属層は36Ni−Fe、第3金属層は銅である。
上記した以外の課題、構成及び効果は、以下の実施形態の説明により明らかにされる。
本実施形態の半導体装置は、パワー半導体チップであるMOSFET101、ワイヤー102、絶縁基板103、放熱ベース104、積層金属板105、ドレイン端子106C、ソース端子106E、MOSFET101の下の接合層107、積層金属板105の下の接合層108、絶縁基板103の下の接合層109を備える。
本実施形態では、半導体層101SにSiC(シリコンカーバイド)を用いている。半導体層101SにSiCを用いることにより、Siを用いた場合よりも、MOSFET101の最大動作温度を高くすることができる。
絶縁層103Iの裏側(放熱ベース104側)には、裏面金属層103Mが接合されている。裏面金属層103Mは、厚さ0.2mm程度のCu(銅)の層である。
絶縁基板103の表面側、すなわち、MOSFET101側には、ドレイン配線パターン103C及びソース配線パターン103Eが接合されている。ドレイン配線パターン103C及びソース配線パターン103Eは、厚さ0.3mm程度のCuの層である。
MOSFET101のソース電極101E上には、積層金属板105が、接合層108を介して接合されている。
積層金属板105上及び絶縁基板103のソース配線パターン103E上には、ワイヤー102が接合されている。
絶縁基板103は、接合層109を介して、放熱ベース104と接続されている。
接合層107及び接合層108には、銅の焼結体が用いられる。
さらにまた、従来の半導体装置は、ワイヤー102として、直径400μmのAl(アルミニウム)ワイヤーが用いられている。
さらに、各金属層をより好適な厚さの比率にすることにより、破壊に至る熱応力の繰り返し回数をより増大させることが可能である。
ただし、銅の焼結体に限定する必要はなく、例えば銀の焼結体を用いても、信頼性の高い接合が得られる。
積層金属板105の全体の厚さが1mmの場合について、第1金属層105Aと第3金属層105Cは同じ厚さとして、第2金属層105Bの厚さ/第1金属層105Aの厚さの比率を1〜20の間で変えて、半導体装置の試料を作製した。
同様にして、積層金属板105の全体の厚さが0.6mmの場合、0.3mmの場合についても、第2金属層105Bの厚さ/第1金属層105Aの厚さの比率を1〜20の間で変えて、半導体装置の試料を作製した。
そして、第2金属層105Bと第1金属層105Aが同じ厚さの場合、つまり第2金属層105Bの第1金属層105Aに対する厚さの比率が1の場合を基準として、この基準の場合の繰り返し回数に対する各試料の繰り返し回数の比を求めた。この繰り返し回数の比を、以下、「熱応力繰り返し回数比」と呼ぶ。
図3に示すように、破壊に至るまでの熱応力繰り返し回数比は、第2金属層105Bの第1金属層105Aに対する厚さの比率が1の場合よりも、1より大きい場合の方が増大することがわかる。特に、第2金属層105Bの第1金属層105Aに対する厚さの比率が5以上18以下の場合、第2金属層105Bの第1金属層105Aに対する厚さの比率が1の場合に比べ、破壊に至るまでの熱応力繰り返し回数が4倍以上増大する。さらに好ましくは、第2金属層105Bの第1金属層105Aに対する厚さの比率が9以上16以下の場合、第2金属層105Bの第1金属層105Aに対する厚さの比率が1の場合に比べ、破壊に至るまでの熱応力繰り返し回数が4.5倍以上増大する。
図4に示すように、破壊に至るまでの熱応力繰り返し回数比は、第2金属層105Bの第1金属層105Aに対する厚さの比率が1の場合よりも、1より大きい場合の方が増大することがわかる。特に、第2金属層105Bの第1金属層105Aに対する厚さの比率が5以上18以下の場合、第2金属層105Bの第1金属層105Aに対する厚さの比率が1の場合に比べ、破壊に至るまでの熱応力繰り返し回数が4.5倍以上増大する。さらに好ましくは、第2金属層105Bの第1金属層105Aに対する厚さの比率が9以上16以下の場合、第2金属層105Bの第1金属層105Aに対する厚さの比率が1の場合に比べ、破壊に至るまでの熱応力繰り返し回数が5.9倍以上増大する。
図5に示すように、破壊に至るまでの熱応力繰り返し回数比は、第2金属層105Bの第1金属層105Aに対する厚さの比率が1の場合よりも、1より大きい場合の方が増大することがわかる。特に、第2金属層105Bの第1金属層105Aに対する厚さの比率が5以上18以下の場合、第2金属層105Bの第1金属層105Aに対する厚さの比率が1の場合に比べ、破壊に至るまでの熱応力繰り返し回数が3.5倍以上増大する。さらに好ましくは、第2金属層105Bの第1金属層105Aに対する厚さの比率が9以上16以下の場合、第2金属層105Bの第1金属層105Aに対する厚さの比率が1の場合に比べ、破壊に至るまでに熱応力繰り返し回数が4倍以上増大する。
また、積層金属板105を配置したことにより、熱容量が増加するため、瞬時の温度上昇が抑えられ、短絡への耐性を向上することができる。
また、半導体装置の信頼性を向上することができるので、半導体装置を備えた機器の寿命を向上することができる。
Claims (4)
- パワー半導体チップと、
回路配線パターンを有する絶縁基板と、
前記パワー半導体チップの表面電極と接合された積層金属板と、
前記積層金属板に接合されたワイヤーと、
前記絶縁基板が接合された放熱ベースと、
前記パワー半導体チップを前記絶縁基板に接合する第1の接合層と、
前記積層金属板を前記パワー半導体チップの前記表面電極に接合する第2の接合層を備え、
前記積層金属板は、第1金属層、第3金属層、及び、前記第1金属層と前記第3金属層に挟まれた第2金属層が積層されて成り、
前記第2金属層は、前記第1金属層及び前記第3金属層よりも厚く、かつ前記第1金属層及び前記第3金属層よりも熱膨張係数が小さく、
前記積層金属板の前記第1金属層に対する前記第2金属層の厚さは、5倍以上18倍以下であり、
前記積層金属板の厚さは、0.3mm以上1.0mm以下であり、
前記積層金属板の前記第1金属層は銅、前記第2金属層は36Ni−Fe、前記第3金属層は銅である、
ことを特徴とする半導体装置。 - 前記ワイヤーは銅製のワイヤーである、
ことを特徴とする請求項1に記載の半導体装置。 - 前記第1の接合層と前記第2の接合層が、銅または銀の焼結体である
ことを特徴とする請求項1または請求項2に記載の半導体装置。 - 前記パワー半導体チップの半導体はシリコンカーバイドである、
ことを特徴とする請求項1から請求項3のいずれか1項に記載の半導体装置。
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