JP2014239084A - 回路装置 - Google Patents

回路装置 Download PDF

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Publication number
JP2014239084A
JP2014239084A JP2011217074A JP2011217074A JP2014239084A JP 2014239084 A JP2014239084 A JP 2014239084A JP 2011217074 A JP2011217074 A JP 2011217074A JP 2011217074 A JP2011217074 A JP 2011217074A JP 2014239084 A JP2014239084 A JP 2014239084A
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JP
Japan
Prior art keywords
ceramic substrate
solder
island
conductive pattern
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011217074A
Other languages
English (en)
Inventor
齋藤　浩一
Koichi Saito
浩一 齋藤
中里　真弓
Mayumi Nakazato
真弓 中里
芳央 岡山
Yoshihisa Okayama
芳央 岡山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP2011217074A priority Critical patent/JP2014239084A/ja
Priority to PCT/JP2012/006170 priority patent/WO2013046680A1/ja
Priority to US14/075,847 priority patent/US20140063767A1/en
Publication of JP2014239084A publication Critical patent/JP2014239084A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H05K1/111—Pads for surface mounting, e.g. lay-out
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Abstract

【課題】 半導体チップの表面から裏面に電流が流れる縦型のパワーＭＯＳがあるが、このパワーＭＯＳの裏面には、裏面電極としてＡｕが用いられている。そしてＣｕから成るリードフレームのアイランド、モジュール基板の上に設けられ、Ｃｕから成るアイランドには、半田が設けられてこのパワーＭＯＳが実装されている。
しかし半田の成分であるＳｎとＣｕは、Ｃｕ−Ｓｎ合金を形成し、この合金が、最近では、電気抵抗が大きいとして、もっと抵抗値の低い材料が求められている。
【解決手段】 半導体素子５５の裏面の最表面には、Ｃｕを主成分とする裏面電極６１が設けられ、アイランド５６と前記裏面電極６１の界面は、析出ＣｕまたはＣｕの固相拡散により、直接固着され、第１の導電パターン５３と金属ベース５１は、Ｓｎを主材料とした半田により固着されている。
【選択図】図１

Description

本発明は、ＣｕとＣｕを接合した回路装置に関する。
地球温暖化により環境変化が著しく、ＣＯ２の排出を抑制する動きが活発になっている。そしてこのＣＯ２の排出を抑制する動きの一つとして電力の削減が叫ばれている。
例えば、エアコン、冷蔵庫または洗濯機等もその一つである。これらを駆動する回路装置にも波及し、できる限り電力ロスが少ない回路装置が求められている。
例えば、その回路装置としてインバータモジュールがあり、エアコンや冷蔵庫に取り付けられている。
国際公開２００５−０８６２１８
これらの回路装置は、パワー半導体素子を採用し、大電流が流れるため、内蔵されるパワー半導体チップ等からの発熱が著しい。そしてこの熱がこの半導体素子の駆動能力を低下させるため、ここで多くの損失が発生する。
そのため、放熱性を高めて、半導体素子の温度上昇を抑制したり、半導体素子のＯＮ抵抗を少しでも低くする対策が施されている。
例えば、チップの表面から裏面に電流が流れる縦型のパワーＭＯＳがあるが、このパワーＭＯＳの裏面には、裏面電極としてＡｕが用いられている。そしてＣｕから成るリードフレームのアイランド、モジュール基板の上に設けられ、Ｃｕから成るアイランドには、半田が設けられてこのパワーＭＯＳが実装されている。
しかし半田の成分であるＳｎとＣｕは、Ｃｕ−Ｓｎ合金を形成し、この合金が、最近では、電気抵抗が大きいとして、もっと抵抗値の低い材料が求められている。
本発明は、これら課題を解決するものである。
本発明は、前述した課題に鑑みて成されたものであり、
金属材料から成る金属ベースと、前記金属ベースの上に設けられるセラミック基板と、前記セラミック基板の裏面に設けられた第１の導電パターンと、前記セラミック基板の表面に設けられたＣｕを主成分とする第２の導電パターンと、前記第２の導電パターンを構成するアイランドの上に設けられた半導体素子とを少なくとも有し、
前記半導体素子の裏面の最表面には、Ｃｕを主成分とする裏面電極が設けられ、前記アイランドと前記裏面電極の界面は、析出ＣｕまたはＣｕの固相拡散により、直接固着され、前記第１の導電パターンと前記金属ベースは、Ｓｎを主材料とした半田により固着されている事で解決するものである。
半導体素子とセラミック基板とは、固相拡散により接合する為、その間の抵抗値は半田よりも小さい値になり、この回路装置を低損失にできる。更には、熱抵抗も低下し、半導体素子から発生する熱を素早くセラミック基板や金属ベースへと伝えることができる。
一方、金属ベースとセラミック基板との接合には半田を採用している。この半田は、セラミック基板と金属ベースとの熱膨張係数の違いから発生する応力を緩和することができる。尚、セラミック基板と半導体チップは、熱膨張係数が近いため、その接合部において熱膨張係数に起因する応力は金属ベースとセラミック基板との間よりも少ない。また半導体チップは、そのサイズがセラミック基板と比べると非常に小さいので、半導体チップとセラミック基板の間の応力は、更に小さい。そのために、熱応力緩和層を挿入することによる応力緩和の要求は大きくない。また、半導体チップのサイズが小さいから応力は小さい。
固相拡散Ｃｕ−Ｃｕ接合は、半田接合よりも熱抵抗が低く、半導体チップの熱は下層であるセラミック基板に伝わりやすい。セラミック基板と金属ベースとを接続する半田は、固相拡散と比べると熱抵抗が高いが、当該部分のＣｕ−Ｃｕ接合面は広く金属ベースに大量の熱が伝わりやすいため、全体で考えると、応力が少なく、放熱性の高い回路装置が実現できる。
本発明の回路装置を説明する図である。 本発明の回路装置を説明する図である。 本発明の回路装置に採用されるＣｕ−Ｃｕ接合を説明する図である。
先ず、本出願人は、半田を用いずに、簡単な手法でＣｕを主成分とする金属を接合する技術を開発したので、その原理、方法について図３を採用して説明し、その後に本発明の回路装置を説明する。
先ずは、図３（Ａ）に示すように、第１の被接合部１０および第２の被接合部２０を用意する。この第１、第２の被接合部１０、２０は、Ｃｕを主成分とする第１の基材部１１、第２の基材部２１と、この基材部の表面に生成された第１の酸化膜Ｃｕ１２、第２の酸化膜Ｃｕ２１とから成る。尚、「主成分とする」は、ベースとなる材料が５０％を超える値であり、例えば、「Ｃｕを主成分とする。」は、「Ｃｕの含有量が５０％を超える数値である。」を意味する。
この基材部は、特に限定されず、数ｍｍ〜数ｃｍの厚みのＣｕ板とＣｕ板、Ｃｕの金属細線とプリント基板のＣｕパッド、プリント基板のＣｕ電極と回路素子裏面のＣｕ電極等と色々な形態で実施が可能である。またこのＣｕを主成分とするものは、圧延工法でなる板や箔、メッキから成る厚膜、そしてスパッタ等から成る薄膜等で成る。厚みとしては、その境界は無いが、板や箔は、０．１ｍｍ程度から、それ以上、厚膜は、数十μｍから数百μｍ、薄膜は、オングストローム単位である。
また酸化膜は、大気中で形成された自然酸化膜で、約１０ｎｍ程度であるが、意図的に被覆された酸化膜でも良い。
続いて、図３（Ｂ）に示すように、第１の被接合部１０と第２の被接合部２０との間に溶液３０を充填する。更に具体的に言えば、Ｃｕの第１の酸化膜１２とＣｕの第２の酸化膜２２との間に、溶液３０を充填する。この溶液３０は、前記酸化Ｃｕを溶出したり、溶解するもので、更にＣｕを主材料とする基材部に対しては、不活性であるものである。
ここで、溶液３０は、例えば、
アンモニア水（ＮＨ３ＯＨ＋Ｈ２Ｏ）、
シュウ酸（ＨＯＯＣ−ＣＯＯＨ＋Ｈ２Ｏ）、
酒石酸（ＨＯＯＣ−ＣＨ（ＯＨ）−ＣＨ（ＯＨ）−ＣＯＯＨ＋Ｈ２Ｏ）
乳酸（ＣＨ３ＣＨ（ＯＨ）ＣＯＯＨ＋Ｈ２Ｏ）
等である。
この溶液は、酸化膜１２、２２の間に充填され、例えば１μｍ程度の薄い膜でよい。ここで「充填」と表現したが、例えばＣｕ板とＣｕ板では、一方のＣｕ板の上に、前記溶液を滴下、または霧吹き等で吹き付け、或いは溶液に浸漬して、表面に溶液を設け、この上に他方のＣｕ板を配置する事で実現できる。
この様に、第１の被接合部１０と第２の被接合部２０との間に溶液３０を充填することにより酸化Ｃｕ１２、２２が溶液３０に溶出し、第１の酸化膜１２、第２の酸化膜２２が消失する。その結果、第１の被接合部１０、第２の被接合部２０は、Ｃｕの表面が基材部の表面、つまりＣｕが露出する。
アンモニア水で考えれば、アンモニアイオンとＣｕイオンにより、Ｃｕの錯体が形成される。このＣｕの錯体は、[Ｃｕ（ＮＨ３）４]２＋で表現される加熱分解性のテトラアミン錯体イオンとして存在すると考えられる。ここでアンモニア水は、Ｃｕに対して不活性であるため、基材部を構成するＣｕは、アンモニア水と反応せずに残存している。
続いて、第１の被接合部１０と第２の被接合部２０を加圧した状態で２００〜３００度程度の温度で加熱する。加熱することで、水分が蒸発し、テトラアミンＣｕ錯イオンが熱分解してアンモニア成分が蒸発する。
これにより、溶液３０に於いて、Ｃｕの割合が徐々に高まり、プレス機による加圧により、第１の被接合部１０の最表面と第２の被接合部２０の最表面の距離が徐々に近づく。
更に、溶液３０の中のＣｕ以外の成分、正確には、Ｃｕを主成分とする金属以外の成分の除去が完了すると、第１の被接合部１０の最表面と第２の被接合部の最表面と接合される。
第１の基材部１１と第２の基材部２１との間には、固相拡散が生成されている。つまり基材部１１、２１の界面を跨ぐように結晶粒が成長している。この様にして、接合が完了すれば加圧を解除する。
以上の工程により、金属間固相拡散による接合が完了する。
尚、第１の基材部１１、第２の基材部２１は、表面研磨しても良い。例えば、３μｍ径のダイヤモンドが混入されたダイヤモンドペーストで研磨され、加重は５．８ＭＰａである。実験では加重の保持時間は、５ｍｉｎ．〜６０ｍｉｎ．で行なって良好な結果を得ているが、最近では、数秒の保持でも接合が可能であることがわかっている。
約３％程度のアンモニア水では、接合温度は、２００〜３００度であるが、酒石酸では、１１０度〜２００度程度である。
またシュウ酸では、ジカルボン酸、酒石酸、クエン酸または乳酸では、オキシカルボン酸によるキレート形成により、酸化Ｃｕを溶かし、アンモニア水から比較すると、Ｃｕ−Ｃｕ接合がより効果的に形成できる。しかも温度が１１０度〜２００度、好ましいポイントでは、１２５度程度まで接合温度を低下させることができる。
また、接合される金属は銅を主成分とするものに限定されず、たとえば金を主成分とする金属やアルミニウムを主成分とする金属であっても良い。
では、図１を参照しながら、回路装置５０を説明する。この回路装置は、半導体素子のみで実装されれば、半導体装置であり、半導体素子と受動素子で構成されれば、混成集積回路装置である。また半導体素子が大電流用の半導体素子で構成されれば、パワーモジュールでもある。更に、半導体素子としてＬＥＤが実装されれば、光半導体装置または光モジュールである。またトランスファーモールドで樹脂封止しても良いし、金属から成るキャン封止でも良い。更には、封止対策を施さず、図１の如きモジュールでも良い。ここでは、これらを総称して回路装置と呼ぶ。
では先ずヒートシンクとして機能する金属ベース５１がある。ここでは、Ｃｕ、またはＣｕを主成分とする金属から成る。また後述するが、Ａｌでも良い。続いて、耐電圧特性が求められたり、高周波数が求められる事から、セラミック基板５２がある。このセラミック基板の材料としては、酸化アルミニウム（Ａｌ２Ｏ３）、窒化アルミニウム（ＡｌＮ）または窒化シリコン（Ｓｉ３Ｎ４）等である。
そしてセラミック基板５２の表と裏には、ＣｕまたはＣｕを主成分とする金属からなる導電パターンが設けられている。裏面の第１の導電パターン５３は、実質セラミック基板５２の裏面の殆どに設けられている。或いは、外周から若干内側に入って全域に設けても良い。これは、金属ベース５１と半田で接続するためのものである。
一方、表面の第２の導電パターン５４も、第１の導電パターンと同一の材料で成る。ここでは、回路パターンが形成され、半導体素子５５が実装されるアイランド５６、半導体素子５５または受動素子５７と電気的に接続されるパッド５８、５９がある。更には、パッド５８、５９またはアイランド５６と一体で、またはアイランド状に配置される配線がある。
半導体素子５５は、図面では、大電流用の半導体素子を示し、Ｓｉ、ＳｉＣまたはＧａＮ等の半導体材料から成る縦型の半導体素子である。表面のボンディングパッドとセラミック基板５２上のパッド５８とは、金属細線６０で接続されている。またこの大電流用の半導体素子５５は、チップ裏面から外に、或いは中に電流が通過するため、チップ裏面には、裏面電極６１が形成されている。そしてこの裏面電極６１の最表面は、Ｃｕからなる。例えばＳｉチップの裏面から、Ａｌ、Ｔｉ、Ｎｉ、Ａｇ、Ｃｕの順で積層される。Ｃｕは、メッキが一般的であるが、スパッタリングでも成膜は可能である。この裏面電極は、ＳｉＣまたはＧａＮでも同様である。そして半導体素子５５の裏面電極６１とセラミック基板５２のアイランド５６とは、本発明のＣｕ−Ｃｕ接合により、電気的に、物理的に接合される。
更に、パッド５９は、受動素子５７を電気的に接続するものである。ここで受動素子５７は、チップ抵抗、チップコンデンサなどである。
本発明は、セラミック基板５２のアイランド５６に、図３で述べた溶液３０を設け、チップ吸着装置（チップボンダー）に装着されたコレットで半導体素子５５の表面を吸着し、そのままチップの裏面電極６１をアイランド５６に載せる。一方ボンターのテーブルは、加熱され、そのテーブルに載せられたセラミック基板全体が加熱されている。よってセラミック基板の上に載せられた半導体素子に、前記コレットで加圧を加えることで、チップ裏面とアイランド表面の間にＣｕ−Ｃｕ接合が実現できる。
固相拡散で、Ｃｕ−Ｃｕ接合を実現する為、その間の抵抗値は、半田よりも小さい値になり、この回路装置を低損失にできる。更には、熱抵抗も低下し、半導体素子５５から発生する熱を素早くセラミック基板５２や金属ベース５１へと伝えることができる。
一方、金属ベース５１と第１の導電パターン５３は、低融点の半田６２を採用している。例えば２３０度のＳｎ−Ａｇ−Ｃｕから成る半田を採用している。この半田は、セラミック基板５２と金属ベース５１との熱膨張係数の違いから発生する応力を緩和することができる。尚、セラミック基板と半導体チップは、熱膨張係数が近いため、Ｃｕ−Ｃｕ接合部には、その熱膨張係数による応力が、金属ベースとセラミック基板との間よりも少ない。そしてＣｕ−Ｃｕ接続よりも熱応力がより発生する部分には、この柔らかな半田で緩和することができる。
Ｃｕ−Ｃｕ接合は、半田よりも熱抵抗が低く、半導体チップの熱は下層に伝わりやすい。更に半田６２は、Ｃｕ−Ｃｕ接合と比べると熱抵抗が高いが、Ｃｕ−Ｃｕ接合面よりも広く形成されているため、金属ベース５１に大量の熱が伝わりやすく、結局全体で考えると、応力が少なく、放熱性の高い回路装置が実現できる。尚、ここでは図１（Ｂ）の様に、パッド５８の周囲を囲むように設けても良いし、それよりも大きなサイズで設けても良い。
図１（Ｂ）は、金属ベース５１がＣｕであるため、半田６２の流れを防止し、より半田の柔軟性を発揮させたものである。尚、セラミック基板５２から上の構造は、図１（Ｂ）と同一なので、その説明は省略する。
セラミック基板５２の裏面には、少なくとも半導体チップの真下に、少なくともアイランドと実質同一サイズで同一位置に、またはパッド５８を含め前記アイランドが設けられた全域で、位置も同一位置に導電パターン５３Ａを設けている。尚、ここでは、チップ素子５７の下にも、同一サイズで同一位置に第１の導電パターン５３Ｂが設けられている。
そして金属ベース５１には、この導電パターン５３Ａ、５３Ｂに対応して、複数の凹部ｈ１、ｈ２・・・が設けられ、その部分に半田６２が設けられる。
この構造にすれば、半田６２は流れず、凹部の深さにより、半田の厚みを確保することができる。その結果、セラミック基板５２と金属ベース５１との間で発生する応力は、図１（Ａ）よりも緩和される。
続いて、図２では、金属ベース５１としてＡｌを用いた場合について説明する。Ａｌの上に直接Ｃｕを成膜することは、難しいので、ここでは、絶縁性樹脂７０を用いた。先ず金属ベース５１の表面と裏面は陽極酸化され、酸化膜７１が生成されている。そして前記絶縁性樹脂７０が付いたＣｕ箔シートが金属ベース５１に貼りあわされ、回路パターン７２がエッチングにより形成されている。尚、絶縁性樹脂７０は、半田から比較すると大きな熱抵抗となるため、中にフィラーが混ぜられている。このＡｌ基板５１に形成された第３の導電パターン７２は、図１（Ａ）または（Ｂ）の第２の導電パターン５３と同じ形状が選択できる。尚、酸化膜７１は、省略することも可能である。
Ａｌは、Ｃｕよりも若干放熱性に劣るが、軽さはＣｕよりも優れている。よって車等の軽量さを求める場合は、最適である。
尚、金属ベース５１から第３の導電パターンまでが異なり、それ以外は同一であるため、後の説明は省略する。
５０：回路装置
５１：金属ベース
５２：セラミック基板
５３：第１の導電パターン
５４：第２の導電パターン
５５：半導体素子
５６：アイランド
５７：受動素子
５８、５９：パッド
６０：金属細線
６１：裏面電極
６２：半田
ｈ１、ｈ２：凹部
７０：絶縁性樹脂
７１：酸化膜
７２：第３の導電パターン

Claims (5)

  1. 金属材料から成る金属ベースと、前記金属ベースの上に設けられるセラミック基板と、前記セラミック基板の裏面に設けられた第１の導電パターンと、前記セラミック基板の表面に設けられたＣｕを主成分とする第２の導電パターンと、前記第２の導電パターンを構成するアイランドの上に設けられた半導体素子とを少なくとも有し、
    前記半導体素子には、Ｃｕを主成分とする最表面を有する裏面電極が設けられ、前記アイランドと前記裏面電極の界面は、固相拡散により、直接固着され、前記第１の導電パターンと前記金属ベースは、半田により固着されている事を特徴とした回路装置。
  2. 前記金属ベースは、ＣｕまたはＡｌを主成分とする請求項１に記載の回路装置。
  3. 前記界面には、前記裏面電極の表面よりも内側に成長した固相拡散、および前記アイランドの表面よりも内側に成長した前記固相拡散が設けられる請求項１または請求項２に記載の回路装置。
  4. 前記半導体素子の配置位置に対応する前記第１の導電パターンは、前記裏面電極と前記アイランドとのＣｕとＣｕの固着面積よりも大きく、前記セラミック基板の裏面サイズよりも小さい事を特徴とした請求項１、請求項２または請求項３に記載の回路装置。
  5. 前記金属ベースには、凹部が設けられ、その凹部に設けられた半田により前記セラミック基板裏面の第１の導電パターンが固着される事を特徴とした請求項１、請求項２または請求項３に記載の回路装置。
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