JP2007103949A - パワー半導体素子とハウジングとを備えた装置及びその製造方法 - Google Patents
パワー半導体素子とハウジングとを備えた装置及びその製造方法 Download PDFInfo
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Abstract
【解決手段】少なくとも1つのパワー半導体素子(70)が、基板とは反対側のその第1主面上に、貴金属から成る金属被覆層を備えた少なくとも1つの接触面を有し、この少なくとも1つの接触面が、金属成形体(76)であってパワー半導体素子(70)側のその第2主面上に同様に貴金属層を有する金属成形体(76)と、加圧焼結接続部を用いて互いに接続されていること。付属の製造方法は、金属成形体(76)がウェーハ結合体としての複数のパワー半導体素子上に配置され、これらが同時に圧力付勢され、これらにおいて加圧焼結接続部が同時に生成されるという本質的なステップを有する。
【選択図】図3
Description
・ 金属粉及び溶剤から成るペースト状の層を、個々の素子の接続すべき接触面上に塗布するステップ;
・ 基板上にその素子を取り付けるステップ。この際、そのペースト状の層が素子と基板との間に配置される;
・ 素子とペースト状の層と基板とから成る結合体から溶剤を追い出すステップ;
・ 追加的な圧力付勢のもと、焼結温度に結合体を加熱するステップ。
・ 金属粉及び溶剤から成るペースト状の層を支持フォイル上に塗布するステップ;
・ ペースト状の層を乾燥させるステップ;
・ 乾燥された層上に少なくとも1つの素子を取り付けるステップ;
・ 少なくとも1つの素子と、乾燥された層を有する支持フォイルとから成る結合体を圧力付勢するステップ。それによりその層と素子との間の付着力がその層と支持フォイルとの間の付着力よりも大きくなる;
・ 付着する層を備えた少なくとも1つの素子を支持フォイルから取り外すステップ;
・ 付着する層を備えたその素子を基板上に位置決めするステップ;
・ 基板及び素子の装置を圧力及び温度付勢し、それらを焼結接続させるステップ。
・ 金属粉(好ましくは銀)と溶剤とから成るペースト状の層をパワー半導体素子の接触面上に選択的に塗布するステップ;
・ そのペースト状の層を乾燥させるステップ;
・ 各々の金属成形体を接触面上の乾燥された各々の層上に取り付けるステップ;
・ 金属成形体の配置された複数のパワー半導体素子に対し、それらの焼結接続のために圧力付勢(加圧)するステップ;
・ ウェーハ結合体からパワー半導体素子を個別化するステップ;
・ 金属成形体を備えたパワー半導体素子を基板上に配置するステップ;
・ 金属成形体の配置されたパワー半導体素子を、他のパワー半導体素子、接続要素、及び/又は端子要素と、回路に適して接続するステップ;
・ ハウジングを配置するステップ。
3 ハウジング
32 ハウジング部分
34 カバー
36 ロックノーズ
40 接続要素
42、44、46 端子要素
5 基板
52 絶縁材料ボディ
54 導体パス
70 パワー半導体素子
72 接触面
74 接触面
76 金属成形体/接触面
78 バー
80 ペーストの吹き付け
82 圧力付勢
84 鋸引き
86 取り外し
90 支持フォイル
92 フレーム
Claims (9)
- 少なくとも1つのパワー半導体素子(70)と、電気絶縁式のハウジング(3)とを備えた装置であって、この装置が、外側に通じる端子要素(42、44、46)と、ハウジング(3)により少なくとも部分的に包囲されている少なくとも1つの基板(5)とを備え、少なくとも1つのパワー半導体素子(70)がその第2主面を用いて基板(5)上に配置されている、前記装置において、
少なくとも1つのパワー半導体素子(70)が、基板(5)とは反対側のその第1主面上に、貴金属から成る金属被覆層を備えた少なくとも1つの接触面を有し、この少なくとも1つの接触面が、金属成形体(76)であってパワー半導体素子(70)側のその第2主面上に同様に貴金属層を有する金属成形体(76)と、加圧焼結接続部を用いて互いに接続されていることを特徴とする装置。 - 請求項1に従う装置の製造方法であって、ウェーハ結合体としての複数のパワー半導体素子(70)から出発し、このウェーハ結合体が、各々パワー半導体素子(70)ごとに少なくとも1つの接触面を有し、この接触面が、第1主面上で貴金属から成る金属被覆層(72)を備えている方法において、この方法が、少なくとも、次のステップ、即ち、
a) 金属粉と溶剤とから成るペースト状の層(20)をパワー半導体素子(70)の接触面上に選択的に塗布(80)するステップ;
b) そのペースト状の層(20)を乾燥させるステップ;
c) 各々の金属成形体(76)を接触面上の乾燥された各々の層上に取り付けるステップ;
d) 金属成形体(76)の配置された複数のパワー半導体素子(70)に対し、それらの焼結接続のために圧力付勢(82)するステップ;
e) ウェーハ結合体からパワー半導体素子(70)及びこれと接続された金属成形体(76)を個別化(84)するステップ;
f) 金属成形体(76)を備えたパワー半導体素子(70)を基板(5)上に配置するステップ;
g) 金属成形体(76)の配置されたパワー半導体素子(70)を、他のパワー半導体素子、接続要素、及び/又は端子要素と、回路に適して接続するステップ;
h) ハウジングを配置するステップ
を有することを特徴とする方法。 - 金属成形体(76)が平たく形成されていて、その横方向の最大の広がりを100としたときの最大で50の厚さを有することを特徴とする、請求項1に記載の装置。
- パワー半導体素子(70)がその第1主面上に多層の金属被覆部を有することを特徴とする、請求項1に記載の装置。
- 金属成形体(76)が、銅、又はモリブデン、又は100のうち少なくとも80の体積部分の割合でこれらの両方の金属の1つから成り、その表面が、電気的に析出された貴金属表面を有することを特徴とする、請求項1に記載の装置。
- 基板(5)が、平たい電気絶縁式のセラミックボディ(52)と少なくとも1つの金属層とを有する層序から成り、その金属層が、パワー半導体素子(70)の方を向いた側でそれ自体が構造化されていて、それにより互いに電気絶縁された複数の導体パス(54)を形成し、少なくとも1つのパワー半導体素子(70)がこれらの導体パス(54)の少なくとも1つの上に配置され、押圧力接触接続部、ロウ付け接続部、接着接続部、又は他の加圧焼結接続部を用い、この導体パス(54)と電導接続されていることを特徴とする、請求項1に記載の装置。
- 部分ステップaがスクリーンプリンティング法を用いて実施されることを特徴とする、請求項2に記載の方法。
- 個々の金属成形体(76)が部分ステップcにおいて結合体として配置されていることを特徴とする、請求項2に記載の方法。
- 部分ステップeが鋸引き法を用いて実施されることを特徴とする、請求項2に記載の方法。
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JP2009033168A (ja) * | 2007-07-26 | 2009-02-12 | Semikron Elektronik Gmbh & Co Kg | 金属コンタクト層を有するパワー半導体素子およびその製造方法 |
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JP2016100604A (ja) * | 2014-11-25 | 2016-05-30 | ヘレウス ドイチェラント ゲーエムベーハー ウント カン | 基板アダプタを有する半導体素子、固体基板アダプタを有する半導体素子を製造するための方法および半導体素子を接触させるための方法 |
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