JP5119039B2 - 金属接触層を有するパワー半導体基板並びにそのための製造方法 - Google Patents
金属接触層を有するパワー半導体基板並びにそのための製造方法 Download PDFInfo
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- JP5119039B2 JP5119039B2 JP2008122169A JP2008122169A JP5119039B2 JP 5119039 B2 JP5119039 B2 JP 5119039B2 JP 2008122169 A JP2008122169 A JP 2008122169A JP 2008122169 A JP2008122169 A JP 2008122169A JP 5119039 B2 JP5119039 B2 JP 5119039B2
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 43
- 239000000758 substrate Substances 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 title description 6
- 239000002184 metal Substances 0.000 title description 6
- 239000007769 metal material Substances 0.000 claims abstract description 14
- 239000010970 precious metal Substances 0.000 claims abstract description 6
- 229910052709 silver Inorganic materials 0.000 claims abstract description 5
- 239000004332 silver Substances 0.000 claims abstract description 5
- 239000004020 conductor Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 11
- 235000011837 pasties Nutrition 0.000 claims description 9
- 229910000510 noble metal Inorganic materials 0.000 claims description 7
- 238000003825 pressing Methods 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 7
- 239000011889 copper foil Substances 0.000 abstract description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 4
- 239000010931 gold Substances 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 239000011888 foil Substances 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 4
- 238000005219 brazing Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002343 gold Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
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- H05K2201/0335—Layered conductors or foils
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- H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
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Description
・ 平たい絶縁基本ボディと導体通路とこの導体通路の接触面とを有するパワー半導体基板を製造するステップ
・ 金属性素材と溶剤から成るペースト状の層をパワー半導体基板の少なくとも1つの接触面上に配置するステップ
・ このペースト状の層に対する加圧のステップ。この際、溶剤の大部分を加圧前にペースト状の層から追い出すことは有利である。
・ パワー半導体モジュールから外に出てゆく端子要素である接触バネの接触フットをペースト状の層に接続するステップ
ここで、ペースト状の層が少なくとも10マイクロメートルの層厚と、100のうち90以上の貴金属の割合を有する。
12 セラミックス基本ボディ
14、16 金属積層部
140、160 セラミックス基本ボディの主面
162 接触面
18 金層
20 ペースト状の層
30 加圧
40 フォイル
50 パワー半導体素子
52 ワイヤボンディング接続部/ボンディングワイヤ
60 接触バネ
62 接触フット
Claims (4)
- 平たい絶縁基本ボディ(12)と少なくとも1つの導体通路(16)とこの導体通路(16)の一部としての少なくとも1つの接触面(162)とを有するパワー半導体基板(10)において、この接触面(162)上に金属性素材の層(20)が加圧焼結接続を用いて配置されており、
前記金属性素材が少なくとも10マイクロメートルの層厚と、100のうち90以上の貴金属の割合を有し、
パワー半導体モジュールから外に出てゆく端子要素である接触バネ(60)の接触フット(62)が、前記金属性素材の層(20)と接続されることを特徴とするパワー半導体基板。 - 前記貴金属が銀であることを特徴とする、請求項1に記載のパワー半導体基板。
- 接触面(162)と金属性素材の層(20)の間に数原子層の層厚を有する貴金属の他の金属性層(18)が配置されていることを特徴とする、請求項1に記載のパワー半導体基板。
- 請求項1に記載のパワー半導体基板(10)を製造するための方法が次の主要ステップ、即ち、
・ 平たい絶縁基本ボディ(12)と導体通路(16)とこの導体通路(16)の接触面(162)とを有するパワー半導体基板(10)を製造するステップと、
・ 金属性素材と溶剤から成るペースト状の層(20)をパワー半導体基板(10)の少なくとも1つの接触面(162)上に配置するステップと、
・ このペースト状の層(20)に対する加圧(30)のステップと、
・ パワー半導体モジュールから外に出てゆく端子要素である接触バネ(60)の接触フット(62)をペースト状の層(20)に接続するステップと、を有し、
ペースト状の層が少なくとも10マイクロメートルの層厚と、100のうち90以上の貴金属の割合を有することを特徴とする方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE102007022336.8 | 2007-05-12 | ||
DE102007022336A DE102007022336A1 (de) | 2007-05-12 | 2007-05-12 | Leistungshalbleitersubstrat mit Metallkontaktschicht sowie Herstellungsverfahren hierzu |
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JP2008283183A JP2008283183A (ja) | 2008-11-20 |
JP5119039B2 true JP5119039B2 (ja) | 2013-01-16 |
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JP2008122169A Expired - Fee Related JP5119039B2 (ja) | 2007-05-12 | 2008-05-08 | 金属接触層を有するパワー半導体基板並びにそのための製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9768036B2 (ja) |
EP (1) | EP1993132B1 (ja) |
JP (1) | JP5119039B2 (ja) |
CN (1) | CN101304012B (ja) |
DE (1) | DE102007022336A1 (ja) |
Cited By (1)
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JP6998444B2 (ja) | 2016-05-18 | 2022-01-18 | テルモ株式会社 | 血液凝固検査システムおよび血液凝固検査システムの制御方法 |
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EP3741871A3 (en) * | 2012-04-19 | 2021-02-17 | The Medical College of Wisconsin, Inc. | Highly sensitive surveillance using detection of cell free dna |
DE102015107712B3 (de) * | 2015-05-18 | 2016-10-20 | Danfoss Silicon Power Gmbh | Verfahren zur Herstellung eines Schaltungsträgers |
SE539800C2 (en) | 2015-05-26 | 2017-12-05 | Stora Enso Oyj | Method and arrangement for producing electrically conductive patterns on substrates |
DE102022213183B3 (de) | 2022-12-07 | 2024-01-18 | Zf Friedrichshafen Ag | Verfahren zum bilden eines leistungsmoduls |
Family Cites Families (16)
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DE3414065A1 (de) * | 1984-04-13 | 1985-12-12 | Siemens AG, 1000 Berlin und 8000 München | Anordnung bestehend aus mindestens einem auf einem substrat befestigten elektronischen bauelement und verfahren zur herstellung einer derartigen anordnung |
IN168174B (ja) * | 1986-04-22 | 1991-02-16 | Siemens Ag | |
EP0330896A3 (de) * | 1988-03-03 | 1991-01-09 | Siemens Aktiengesellschaft | Verfahren zum Befestigen von Halbleiterbauelementen auf Substraten und Anordnungen zur Durchführung desselben |
DE4233073A1 (de) | 1992-10-01 | 1994-04-07 | Siemens Ag | Verfahren zum Herstellen eines Halbleiter-Modulaufbaus |
JP4077888B2 (ja) | 1995-07-21 | 2008-04-23 | 株式会社東芝 | セラミックス回路基板 |
DE19646369B4 (de) * | 1996-11-09 | 2008-07-31 | Robert Bosch Gmbh | Keramische Mehrlagenschaltung und Verfahren zu ihrer Herstellung |
US6228196B1 (en) * | 1998-06-05 | 2001-05-08 | Murata Manufacturing Co., Ltd. | Method of producing a multi-layer ceramic substrate |
JP3322305B2 (ja) * | 1999-02-25 | 2002-09-09 | 日本電気株式会社 | 半導体装置の製造方法 |
JP3656484B2 (ja) * | 1999-03-03 | 2005-06-08 | 株式会社村田製作所 | セラミック多層基板の製造方法 |
DE10062108B4 (de) | 2000-12-13 | 2010-04-15 | Infineon Technologies Ag | Leistungsmodul mit verbessertem transienten Wärmewiderstand |
JP2003101184A (ja) * | 2001-09-27 | 2003-04-04 | Kyocera Corp | セラミック回路基板およびその製造方法 |
DE10316355C5 (de) * | 2003-04-10 | 2008-03-06 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbeitermodul mit flexibler äusserer Anschlussbelegung |
US20070183920A1 (en) * | 2005-02-14 | 2007-08-09 | Guo-Quan Lu | Nanoscale metal paste for interconnect and method of use |
DE102004019567B3 (de) * | 2004-04-22 | 2006-01-12 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Befestigung von elektronischen Bauelementen auf einem Substrat |
DE102005047566C5 (de) * | 2005-10-05 | 2011-06-09 | Semikron Elektronik Gmbh & Co. Kg | Anordnung mit einem Leistungshalbleiterbauelement und mit einem Gehäuse sowie Herstellungsverfahren hierzu |
DE102005047567B3 (de) * | 2005-10-05 | 2007-03-29 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit Isolationszwischenlage und Verfahren zu seiner Herstellung |
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2007
- 2007-05-12 DE DE102007022336A patent/DE102007022336A1/de not_active Withdrawn
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2008
- 2008-05-08 JP JP2008122169A patent/JP5119039B2/ja not_active Expired - Fee Related
- 2008-05-09 CN CN2008100967353A patent/CN101304012B/zh active Active
- 2008-05-09 EP EP08008713.3A patent/EP1993132B1/de active Active
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6998444B2 (ja) | 2016-05-18 | 2022-01-18 | テルモ株式会社 | 血液凝固検査システムおよび血液凝固検査システムの制御方法 |
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Publication number | Publication date |
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EP1993132A3 (de) | 2010-09-08 |
EP1993132B1 (de) | 2018-07-11 |
CN101304012B (zh) | 2013-03-13 |
EP1993132A2 (de) | 2008-11-19 |
JP2008283183A (ja) | 2008-11-20 |
US20090008784A1 (en) | 2009-01-08 |
DE102007022336A1 (de) | 2008-11-20 |
US9768036B2 (en) | 2017-09-19 |
CN101304012A (zh) | 2008-11-12 |
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