JP5587844B2 - パワー半導体モジュールおよびその製造方法 - Google Patents
パワー半導体モジュールおよびその製造方法 Download PDFInfo
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- JP5587844B2 JP5587844B2 JP2011191590A JP2011191590A JP5587844B2 JP 5587844 B2 JP5587844 B2 JP 5587844B2 JP 2011191590 A JP2011191590 A JP 2011191590A JP 2011191590 A JP2011191590 A JP 2011191590A JP 5587844 B2 JP5587844 B2 JP 5587844B2
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- power semiconductor
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Description
Claims (18)
- 基板(102)と、少なくとも1つのパワー半導体デバイス(104)と、少なくとも1つの第1のリードフレーム要素(106)とを有するパワー半導体モジュールであって、
前記少なくとも1つの第1のリードフレーム要素(106)が、第1の面において前記パワー半導体デバイス(104)に接合されており、前記第1の面とは反対側の第2の面において前記基板(102)に接合されており、
印刷され且つ焼き付けられた金属層(108)が、前記基板(102)の上に設けられており、
前記少なくとも1つの第1のリードフレーム要素と前記パワー半導体デバイスとの間の前記接合と、前記第1のリードフレーム要素と前記基板の前記金属層との間の前記接合が、焼結金属接合(110)を備えている、
パワー半導体モジュール。 - 前記金属層は銀層である、
請求項1に記載のパワー半導体モジュール。 - 前記金属層は銀合金層である、
請求項1に記載のパワー半導体モジュール。 - 前記金属層は銅層である、
請求項1に記載のパワー半導体モジュール。 - 前記金属層は銅合金層である、
請求項1に記載のパワー半導体モジュール。 - 前記焼結金属接合(110)が焼結銀接合を備えている、
請求項1〜5のいずれか1項に記載のパワー半導体モジュール。 - 前記基板(102)がセラミック基板を備えている、
請求項1〜6のいずれか1項に記載のパワー半導体モジュール。 - 前記基板(102)が薄膜基板または厚膜基板である、
請求項1〜7のいずれか1項に記載のパワー半導体モジュール。 - 少なくとも1つの第2のリードフレーム要素(118)であって、第1の面においてワイヤボンド接続(116)によって前記パワー半導体デバイス(104)に接続されており、前記第1の面とは反対側の第2の面において燒結金属接合によって前記基板(102)に接合されている、前記少なくとも1つの第2のリードフレーム要素(118)、
をさらに備えている、
請求項1〜8のいずれか1項に記載のパワー半導体モジュール。 - 前記第1のリードフレーム要素(106)とは反対側の、前記パワー半導体デバイス(104)の面、に配置されている少なくとも1つの第3のリードフレーム要素(128)、
をさらに備えており、
前記第3のリードフレーム要素(128)と前記パワー半導体デバイス(104)との間の電気的接続が、焼結金属接合を備えている、
請求項1〜9のいずれか1項に記載のパワー半導体モジュール。 - 基板と、少なくとも1つのパワー半導体デバイスと、少なくとも1つの第1のリードフレーム要素とを有するパワー半導体モジュール、を製造する方法であって、
印刷され且つ焼き付けられた金属層を前記基板の上に設けるステップと、
焼結可能な金属ペーストを、前記基板、前記第1のリードフレーム要素の第1および第2の面、前記第1のリードフレーム要素に面している前記パワー半導体デバイスの前記面、のうちのいずれかまたは複数に塗布して構造化するステップと、
前記第1のリードフレーム要素の前記第1の面の上に前記パワー半導体デバイスを位置合わせして固定するステップと、
前記少なくとも1つの第1のリードフレーム要素が前記第1の面において前記パワー半導体デバイスに接合され、前記第1の面とは反対側の前記第2の面において前記基板に接合されるように、前記基板の上に前記第1のリードフレーム要素を位置合わせして固定するステップと、
前記少なくとも1つの第1のリードフレーム要素と前記パワー半導体デバイスとの間の焼結金属接合と、前記第1のリードフレーム要素と前記基板の前記金属層との間の焼結金属接合と、を同時に形成する1回の加圧焼結ステップを実行するステップと、
を有する、方法。 - 前記金属層は銀層である、
請求項11に記載の方法。 - 前記金属層は銀合金層である、
請求項11に記載の方法。 - 前記金属層は銅層である、
請求項11に記載の方法。 - 前記金属層は銅合金層である、
請求項11に記載の方法。 - さらなる少なくとも1つの第2のリードフレーム要素が、燒結金属接合によって前記基板に接合され、ワイヤボンド接続によって前記パワー半導体デバイスに接続される、
請求項11〜15のいずれか1項に記載の方法。 - 前記加圧焼結ステップを実行する前に、さらなる少なくとも1つの第3のリードフレーム要素が、前記第1のリードフレーム要素とは反対側の、前記パワー半導体デバイスの面、の上に位置合わせされて固定され、
前記第3のリードフレーム要素と前記パワー半導体デバイスとの間の電気的接続が、焼結金属接合を備えている、
請求項11〜16のいずれか1項に記載の方法。 - 前記焼結金属接合が焼結銀接合を備えている、
請求項11〜17のいずれか1項に記載の方法。
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DE102010044709.9A DE102010044709B4 (de) | 2010-09-08 | 2010-09-08 | Leistungshalbleitermodul mit Metallsinterverbindungen sowie Herstellungsverfahren |
DE102010044709.9 | 2010-09-08 |
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JP (1) | JP5587844B2 (ja) |
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