CN102437140A - 具有烧结的金属连接的功率半导体模块及制造方法 - Google Patents

具有烧结的金属连接的功率半导体模块及制造方法 Download PDF

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CN102437140A
CN102437140A CN2011103640788A CN201110364078A CN102437140A CN 102437140 A CN102437140 A CN 102437140A CN 2011103640788 A CN2011103640788 A CN 2011103640788A CN 201110364078 A CN201110364078 A CN 201110364078A CN 102437140 A CN102437140 A CN 102437140A
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power semiconductor
lead frame
frame element
substrate
sintering
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CN2011103640788A
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P·桑泰默
A·奥里
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Vincotech Holdings SARL
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Vincotech Holdings SARL
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Abstract

本发明涉及一种具有烧结的金属连接的功率半导体模块及制造方法。该功率半导体模块具有衬底(102)、至少一个功率半导体器件(104)和至少一个引线框元件(106)。本发明还涉及一种制造这种功率半导体模块(100)的方法。按照本发明，该至少一个第一引线框元件和该功率半导体器件之间的连接以及该第一引线框元件和该衬底之间的连接包括烧结金属连接(110)，优选烧结银连接。

Description

具有烧结的金属连接的功率半导体模块及制造方法
技术领域
本发明涉及一种具有衬底、至少一个功率半导体器件和至少一个引线框元件的功率半导体模块。本发明还涉及这种功率半导体模块的制造方法。
具体地，本发明涉及这种功率半导体模块(下面称其为“功率模块”)的装配和互连技术。为此，如通常已知的，实质上两个重要的电连接必须被闭合，即一方面半导体器件(也称为“芯片”)和衬底以及其它内部器件之间的连接，以及另一方面与外部环境的电连接。
背景技术
通常，现代的功率模块涉及必须从半导体元件消散由所需的高功率引起的大量废热的问题。另外，对于所有电连接需要获得高稳定性和载流能力。同时，制造成本应尽量低。
第一已知的封装功率半导体器件的设置将结合图4在下面详细解释。在该设置中，已知的功率半导体模块400包括其上装配有功率半导体器件404的衬底402。通常，该在先解决方法的衬底402是直接铜接合(DCB)衬底，并且半导体器件404在接触点406焊接到DCB衬底。在第二加工步骤，销408焊接到DCB衬底402以获得与外部的接触。为了最终组装，这些销408连接到印刷电路板(PCB)上的相应的导体线路，或者可替换地，注入或者插入到壳体。为此，应用压入接触(press-in contact)以及另外的焊接步骤。通过螺丝连接412实现机械连接到印刷电路板410。通过另一螺丝连接414或者卡扣式夹子(snap-in clip)，该设置连接到散热器416。在盎格鲁撒克逊(anglo-saxon)语中使用术语直接铜接合(DBC)衬底，顺便提及，也是经常被使用的。
这个已知设置的优点是关于电路配置有很高的灵活性。并且，易于实现小数量的制造。然而，该解决方案涉及每件制造成本相对高的缺点。其原因是当芯片初始焊接到陶瓷衬底时必须实施大量复杂的装配步骤，其同时保证与系统的其余部分电绝缘，并且，在第二步骤中，连接销408焊接到DCB衬底402。
另一个已知的设置示于图5。作为图4所示设置的连接销408的替换物，该图中所示的功率模块500提供有引线框指状物506。这里不同的半导体器件504装配在DCB衬底502上且以本身已知的方式焊接到DCB衬底502的铜结构505。朝着外部的所需连接同样由焊接到相应铜结构的引线框506制造。相比于图4的设置，制造图5的设置的工艺管理被简化到引线框元件506和器件504能同时地装配的效果。然而，该已知的设置仍需要分离的接合步骤以制造半导体器件504和相应的引线框元件506之间的电连接。此外，该设置仅适于相对简单的布局。最后，该已知的替换物展示相对大的复杂性以及比图4的设置小的灵活性。
此外，参照图6和7进行解释，完全放弃绝缘衬底并且替代地直接连接器件到引线框也是已知的。这种功率模块例如通过以下内容可以知道：H.Kawafuji等：“DIP-IPM der 4.Generation-Transfer-Mold-DIP-IPM für 5bis35A/1200V mit neuartiger 
Figure BSA00000614348200021
”，http://www.elektronikpraxis.vogel.de/leistungselektronik/articles/150931/，of11/06/2008。为了热消散而提供散热器，其设置在引线框的相反侧。由转移模制(transfer mold)制造的环氧树脂的塑性包装封装该设置并且电绝缘朝向外部的散热器。
为了改进图6的设置的非常不令人满意的热消散，在依据图7的设置中提供薄的、电绝缘、更高热传导的薄膜于引线框706和散热器716之间。因此，可以抛弃在外部的金属化散热器的封装，其允许向外部的更多的热消散。
依据图6和7的已知的功率半导体模块600、700具有对于大量产品的制造非常有成本效率的优势。
然而，这些现有的解决方案具有热条件仍不令人满意和关于电绝缘的构造设计相对复杂的缺点。最后，模块600、700的制造需要相对昂贵的工具。
发明内容
因此，本发明的一个目的是改进前述类型的功率半导体模块以使制造简化，优化热消散以及电绝缘，同时增加载流能力。
该目的通过独立权利要求的主题实现。发明的功率半导体模块和发明的制造方法的有利的实施例限定于从属权利要求中。
为了允许具有增加的特定操作温度的新的芯片的利用，通过使用它们的最大可能使用的参数，已知由金属烧结方法、具体地通过银烧结方法替换常规芯片焊接方法。
本身已知的一种设置示于图8和9，其中芯片通过银烧结方法接合到电路载体。为此，功率半导体器件804、904和载体802、902在增加的温度且以高压压在一起。施加到芯片804、904和载体材料802、902之间的银浆810、910适合在这些条件下形成与两个接合组合体的持久的分子接合，其中衬底例如是具有施加到两侧的两个铜层的氧化铝衬底802、902。通过焊料层908耦合到载体902的另外的铜板915能改善到散热器916的热传输。热传导中间层(“热油脂”)812、912通过相应的公差补偿确保优化的热传输。按照这些已知的解决方案，功率半导体模块800、900朝向外部的电连接再次通过焊接或者压入销806、906实现。
机械地，即使在困难的温度操作条件下银烧结方法也允许很稳定的解决方案。
因此，本发明基于使用金属烧结技术，并且尤其是银烧结技术的想法，按照改进的工艺管理实现稳定且有成本效率的功率半导体模块的生产。
按照本发明，至少一个第一引线框元件在第一表面上连接到功率半导体器件且在与第一表面相反的第二表面上连接到衬底。按照本发明，至少一个第一引线框元件和功率半导体器件之间的连接以及该第一引线框元件和衬底之间的连接在单个制造步骤中通过金属烧结方法制造。
例如，陶瓷衬底例如氧化铝(Al2O3)适合作衬底，其具有良好的热传导性能。当然，其它合适的材料也可以使用。按照本发明，如果使用金属烧结方法，同样尤其是非常薄的衬底，具体地薄膜或厚膜衬底可用作这种功率半导体模块的载体材料。
载体材料提供有预先印刷和烧制的金属层，优选是银涂层，并且在芯片和引线框之间以及引线框和载体之间施加能够烧结的金属层。在这方面要烧结的金属层施加到两个接触组合体的哪个是不相关的。其次，芯片和引线框定位在载体材料上，并且，通过合适温度的作用以及施加机械压力，接合的组合体芯片/引线框和引线框/载体形成持久的机械接合。
因此，使用的方法有利地是一种对于芯片和互连技术在一同时的加工步骤中“一步组装”的方法。
相比前述的已知设置，分离的成本密集工艺步骤的省略带来显著的成本优势。此外，电布局已通过引线框结构以有利的方式实现。总体上按照本发明的系统是极其可靠和稳定的，并且实现的电功率可无限向上攀升。
因此，按照本发明的功率半导体模块能有利地用于多种应用领域，例如驱动控制、可再生能源、不间断电源供应、电力驱动，以及用于焊接和切割、电力供应单元、医学工程设备和铁路工程。
另外，本发明可用于完整的功率模块，但也可用于单独的功率半导体器件，例如分立的半导体。在任何这些应用领域中按照本发明的装配和互连技术提供由于成本节约和极高的热机械稳定性和可靠性的显著优势。
按照本发明的有利的实施例提供至少一个第二引线框元件，其通过引线接合连接在第一表面上连接到功率半导体器件且通过烧结金属连接在与第一表面相反的第二表面上连接到衬底。这种解决方案允许朝向外部的其它连接的额外制造。
此外，按照本发明的设置仍能延伸到更宽的多层(三明治)构造。至少一个第三引线框元件可设置在功率半导体器件的与第一引线框元件相反的表面上，以使半导体器件设置在两个引线框之间。按照本发明，第三引线框元件和功率半导体器件之间的电连接同样在一个制造步骤中通过烧结金属连接实现。这种设置也是分立部件制造中的进一步的简化步骤，其优势在于显著的可靠性和优良的载流能力。
有利地，按照本发明的原理结合烧结银连接以烧结金属层的形式使用。然而，本领域技术人员应意识到，烧结的金属颗粒不仅包括银，还包括金、铜、铂、钯、铑、锇、钌、铱、铁、锡、锌、钴、镍、铬、钛、钽、钨、铟、硅、铝及类似物，或者至少两种金属的合金。
附图说明
为了更好的理解本发明，下面通过图示的实施例更详细地解释，其中相同部分提供相同的附图标记和相同的部件名称。同样，实施例中示出且描述的一些特征以及特征组合可以代表独立的发明的解决方案或者按照本发明的解决方案。在附图中：
图1示出按照第一有利实施例的功率半导体模块的示意图；
图2示出按照本发明的功率半导体模块的第二实施例的示意图；
图3示出具有多层结构的分立半导体的示意图；
图4示出第一已知功率半导体模块的示意图；
图5示出第二已知功率半导体模块的透视图；
图6示出第三已知功率半导体模块的示意图；
图7示出第四功率半导体模块的示意图；
图8示出没有铜基板的陶瓷衬底上烧结银组件的示意图；
图9示出具有铜基板的陶瓷衬底上烧结银组件的示意图。
具体实施方式
图1示意性示出了按照本发明的第一实施例的功率半导体模块100。功率半导体模块100(下文也被称作功率模块)包括优选由陶瓷制造的衬底102。当然，也可以使用所有其它常规的电路载体材料，例如耐高温塑性材料或薄膜。
结构化的、印刷的且烧制(burnt-in)的银层108提供到该衬底102上。该银层108用作与发明的烧结银连接110的接触。按照本发明，功率半导体器件(下文也称作芯片)通过烧结银连接110在第一表面112上连接到第一引线框元件106。与衬底102的电接触在引线框元件106的与第一表面112相反的第二表面上实现。按照发明的解决方案，连接到引线框元件106的两个表面112和114能够在一个单一压力烧结步骤中制造。
按照发明的方法，从按照现有技术的烧结连接已知的浆层在未明确描述的步骤中设置在将要连接的组合体中的一个(或两者)上，优选使用丝网印刷技术。该种浆层的层厚通常在10μm和20μm之间的范围内。
浆层本身由具有在微米尺度最大延展的金属片形式的金属性材料和溶剂的混合物制成。特别地银，而且其它的贵金属或者具有含量超过90％贵金属的混合物，适合作为金属片的材料。因此，本领域技术人员应理解本发明不仅能用于烧结银连接，也用于其它压力烧结连接。而且，为形成金属层，施加压力到该浆层。此外，在该压力施加前从该浆层排出至少95％的溶剂是有利的。优选地，这通过例如350开尔文的温度升高来实现。同样，该温度升高在后续施加压力期间可保持或者增加。
为了保护半导体器件104，在施加压力期间还可进一步提供例如以薄片来覆盖半导体器件104。
为了获得浆层和接触表面之间充分的粘附接合，这种压力的施加的最终最大压力通常是约8Mpa。
通过烧结连接获得的芯片和引线框之间以及引线框和衬底之间的接触接合强度是非常高的。在可靠性测试中烧结层表现出大的负载交替强度(loadalternation strength)。因此，能够获得相比于焊接连接明显大的热负载交替强度。在图1所示的实施例中，芯片104通过引线接合连接116电连接到其它的引线框元件118，并且这些引线框元件同样通过烧结银连接110连接到衬底102。此外，通过热油脂120，衬底102的背对接触表面108的一侧连接到散热器122以便消散热量。然而，在这一点上，可以使用任何其它常见的用于消散存在于衬底102中多余热量的措施。如在功率电子器件中已知的，热油脂120增强了从衬底102到散热器122的热传递。
按照本发明的设置的另一个有利的实施例将结合图2解释。在该设置中，来自芯片104的引线接合连接在另一个引线框结构118上没有实施，而是实施到印刷的以及结构化的金属化结构(metallization)108。此外，常规的电子部件124可通过常规的连接技术例如接合或焊接连接126连接到印刷的金属化结构108。
图1和2的实施例具有成本优化系统的优势，其中布局实现于引线框结构中。它构成一步装配和互连技术，其中芯片装配和连接到线路在一个加工步骤中实现。如此制造的部件是极其可靠的并且在功率方面不受限制。
然而，这里示出的实施例具有需要额外的引线接合工艺的缺点。此外，同样相对复杂的烧结工艺的潜力未完全利用。
因此，按照本发明的另一个实施例，提出了图3中的多层结构轮廓。在该设置中，其首先适合于分立部件的装配和互连技术，再次提供具有结构化的金属化结构的衬底102，优选印刷的且烧制的银层。接着，引线框元件106、功率半导体器件104和另一个引线框元件128堆叠在彼此顶部并且以在一个单一压力烧结步骤中以同时制造所有的烧结银接触110的方式通过插入烧结银前体来连接。银烧结浆也施加到引线框元件128或者芯片104，或者如果合适，甚至可施加到将要连接的两个表面。尤其有利地这些三明治结构能用于薄膜衬底102以便芯片附着和电连接二者能因此在一个加工步骤中获得。
特别对于分立的半导体部件，该设置构成理想的结构，具有随同最大可能的可靠性一起保持最低的成本、以及在宽的范围内不受功率限制的优势。
这首先对于风和太阳能是有实质意义的，并且对于驱动技术也一样。

Claims (12)

1.一种功率半导体模块，具有衬底(102)、至少一个功率半导体器件(104)和至少一个第一引线框元件(106)，
其中该至少一个第一引线框元件(106)在第一表面上连接到该功率半导体器件(104)且在与该第一表面相反的第二表面上连接到该衬底(102)，
其中该至少一个第一引线框元件和该功率半导体器件之间的连接以及该第一引线框元件和该衬底之间的连接包括烧结金属连接(110)。
2.如权利要求1所述的功率半导体模块，其中该烧结金属连接(110)包括烧结银连接。
3.如权利要求1或2所述的功率半导体模块，其中该衬底(102)包括陶瓷衬底。
4.如前述权利要求之一所述的功率半导体模块，其中该衬底(102)是薄膜或厚膜衬底。
5.如前述权利要求之一所述的功率半导体模块，其中印刷导体图案(108)设置在该衬底(102)上。
6.如前述权利要求之一所述的功率半导体模块，还包括至少一个第二引线框元件(118)，该至少一个第二引线框元件(118)在第一表面上通过引线接合连接(116)而连接到该功率半导体器件(104)并且在与该第一表面相反的第二表面上通过烧结金属连接而连接到该衬底(102)。
7.如前述权利要求之一所述的功率半导体模块，还包括设置在该功率半导体器件(104)的与该第一引线框元件(106)相反的表面上的至少一个第三引线框元件(128)，其中该第三引线框元件(128)和该功率半导体器件(104)之间的电连接同样包括烧结金属连接。
8.一种制造功率半导体模块的方法，该功率半导体模块具有衬底、至少一个功率半导体器件和至少一个第一引线框元件，该方法包括以下步骤：
将该功率半导体器件对准并固定在该第一引线框元件的第一表面上；
将该第一引线框元件对准并固定在该衬底上以使该至少一个第一引线框元件在第一表面上连接到该功率半导体器件并且在与该第一表面相反的第二表面上连接到该衬底，
进行压力烧结步骤以使该至少一个第一引线框元件和该功率半导体器件之间的连接以及该第一引线框元件和该衬底之间的连接包括同时制造的烧结金属连接。
9.如权利要求8所述的方法，其中在进行该烧结步骤前进行下述步骤：
施加并结构化能够被烧结的金属浆到/在该衬底上和/或到/在该第一引线框元件的该第一表面和该第二表面上和/或到/在该功率半导体器件的面对该第一引线框元件的表面上。
10.如权利要求8或9所述的方法，其中进一步将至少一个第二引线框元件通过烧结金属连接而连接到该衬底并且通过引线接合连接而连接到该功率半导体器件。
11.如权利要求8至10之一所述的方法，其中在进行该烧结步骤前，进一步将至少一个第三引线框元件对准并固定在该功率半导体器件的与该第一引线框元件相反的表面上，并且
其中该第三引线框元件和该功率半导体器件之间的电连接同样包括烧结金属连接。
12.如权利要求8至11之一所述的方法，其中该烧结金属连接包括烧结银连接。
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