JP7132467B2 - システムインパッケージ及びその製造方法 - Google Patents
システムインパッケージ及びその製造方法 Download PDFInfo
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- JP7132467B2 JP7132467B2 JP2019186475A JP2019186475A JP7132467B2 JP 7132467 B2 JP7132467 B2 JP 7132467B2 JP 2019186475 A JP2019186475 A JP 2019186475A JP 2019186475 A JP2019186475 A JP 2019186475A JP 7132467 B2 JP7132467 B2 JP 7132467B2
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
-
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/19101—Disposition of discrete passive components
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Description
Claims (9)
- システムインパッケージであって、
ラミネートボディと、
前記ラミネートボディの下側表面に取り付けられる第1の基板と、
前記ラミネートボディの上側表面に取り付けられる第2の基板と、
前記ラミネートボディに埋め込まれる半導体ダイであって、その下側表面に形成される第1のコンタクト領域とその上側表面に形成される第2のコンタクト領域とを含む、前記半導体ダイと、
を含み、
前記半導体ダイの第1のコンタクト領域が第1のシンターされたボンディング層を介して前記第1の基板のコンタクトパッドにボンディングされ、前記半導体ダイの第2のコンタクト領域が第2のシンターされたボンディング層を介して前記第2の基板のコンタクトパッドにボンディングされ、
前記半導体ダイの第1及び第2のコンタクト領域が、ガルバニ系列で考えられるときに銅よりも一層貴である金属又は金属合金で作られるか又はメッキされる、システムインパッケージ。 - 請求項1に記載のシステムインパッケージであって、
前記半導体ダイの前記第1及び第2のコンタクト領域が、銅ベースと、前記銅ベース上に配置される金属コーティングとを含む、システムインパッケージ。 - 請求項1に記載のシステムインパッケージであって、
前記第1及び第2の基板のコンタクトパッドが、銅ベースと、前記銅ベース上に配置される金属コーティングとを含む、システムインパッケージ。 - 請求項2に記載のシステムインパッケージであって、
前記金属コーティングが銀を含む、システムインパッケージ。 - 請求項2に記載のシステムインパッケージであって、
前記金属コーティングが金を含む、システムインパッケージ。 - 請求項3に記載のシステムインパッケージであって、
前記金属コーティングが銀を含む、システムインパッケージ。 - 請求項3に記載のシステムインパッケージであって、
前記金属コーティングが金を含む、システムインパッケージ。 - 請求項1乃至7の何れかに記載のシステムインパッケージであって、
前記第1の基板の上側又は下側表面に形成される下側コンタクトパッドと、
前記第2の基板の上側又は下側表面に形成される上側コンタクトパッドと、
前記第1の基板と前記ラミネートボディと前記第2の基板とを貫通して形成され、前記下側コンタクトパッドと前記上側コンタクトパッドとを接続する垂直接続と、
を更に含む、システムインパッケージ。 - システムインパッケージであって、
ラミネートボディと、
前記ラミネートボディの下側表面に取り付けられる第1の基板であって、第1のコンタクトパッドを有する、前記第1の基板と、
前記ラミネートボディの上側表面に取り付けられる第2の基板であって、第2のコンタクトパッドを有する、前記第2の基板と、
前記ラミネートボディに埋め込まれる半導体ダイであって、その下側表面に形成される第1のコンタクト領域とその上側表面に形成される第2のコンタクト領域とを有する、前記半導体ダイと、
前記半導体ダイの第1のコンタクト領域を前記第1の基板の第1のコンタクトパッドに接合する第1のシンターされたボンデンィング層と、
前記半導体ダイの第2のコンタクト領域を前記第2の基板の第2のコンタクトパッドに接合する第2のシンターされたボンディング層と、
を含み、
前記半導体ダイの第1及び第2のコンタクト領域と前記第1及び第2の基板の第1及び第2のコンタクトパッドとがバルバニ系列で考えるときに銅よりもより貴である金属又は金属合金で作られるか又はメッキされる、システムインパッケージ。
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