CN107580726B - 功率模块及功率模块的制造方法 - Google Patents

功率模块及功率模块的制造方法 Download PDF

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CN107580726B
CN107580726B CN201680026303.8A CN201680026303A CN107580726B CN 107580726 B CN107580726 B CN 107580726B CN 201680026303 A CN201680026303 A CN 201680026303A CN 107580726 B CN107580726 B CN 107580726B
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power
component
top side
contact
control unit
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CN107580726A (zh
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K.韦德纳
K.克里格尔
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Siemens AG
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Siemens AG
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Abstract

本发明涉及一种功率模块(1)，其具有功率单元(2)和用于控制功率单元(2)的控制单元(3)。所述功率单元具有冷却体(4)、至少一个布置在冷却体(4)上的功率构件(7)和覆盖冷却体(4)和所述至少一个功率构件(7)的绝缘层(12)。在此，功率单元(2)的底侧(17)通过冷却体(4)的底侧构成，并且功率单元(2)的顶侧(14)通过与至少一个功率构件(7)以热和/或电的方式耦连的至少一个接触面(16)以及绝缘层(12)的围绕所述至少一个接触面(16)的表面(15)构成。所述控制单元(3)具有至少一个、对应于功率单元(2)的所述至少一个接触面(16)的接触元件(18)，所述接触元件(18)被布置成，通过将所述控制单元(3)布置在所述功率单元(2)的顶侧(14)上而使所述接触元件(18)贴靠在所述至少一个接触面上以便与所述至少一个功率构件(7)形成电和/或热接触。本发明还涉及一种用于制造功率模块(1)的方法。

Description

功率模块及功率模块的制造方法
本发明涉及一种功率模块，其具有功率单元和用于控制功率单元的控制单元。本发明还涉及一种用于制造功率模块的方法。
功率模块或功率半导体模块是从现有技术已知的，并且可以设计为换流器、例如逆变器或整流器。在此，这样的功率模块具有芯片，即功率半导体构件或功率构件、例如晶体管、IGBT或二极管，其通常布置在陶瓷基底上并且与其例如通过钎焊以材料接合的方式相连。装配有功率构件的基底通常布置在壳体中。为了触点接通这些功率构件，通常使用压焊连接(Bondverbindungen)，所述压焊连接从芯片的接触面通向在基底上的终端面。在这种借助压焊引线(Bonddraehten)将电构件以电的方式互连或相连的构造中存在的缺点在于，一方面是所述压焊连接尤其在振动以及热机械载荷的情况下会容易断裂，另一方面是这种功率模块具有非常高的电感。
设计功率模块的另一个重大挑战是需要排出由功率构件在运行期间产生的热量，尤其是因为电构件总是变得越来越小。为此，在现有技术中，要么进行耗费的热管理，要么由于散热方案有限而限制功率模块的性能。
本发明要解决的技术问题在于实现一种尤其可靠和紧凑的功率模块，其中，废热可以尤其好地和有效地排出。
上述技术问题通过按照独立权利要求的功率模块以及方法实现。本发明的有利的实施方式是从属权利要求、说明书和附图的主题。
按照本发明的功率模块包括功率单元以及用于控制功率单元的控制单元。功率单元具有冷却体、至少一个布置在冷却体上的功率构件和覆盖冷却体和所述至少一个功率构件的绝缘层。在此，功率单元的底侧通过冷却体的底侧构成，并且功率单元的顶侧通过与至少一个功率构件以热和/或电的方式耦连的至少一个接触面以及绝缘层的围绕所述至少一个接触面的表面构成。所述控制单元具有至少一个、对应于功率单元的至少一个接触面的接触元件，所述接触元件被布置成，通过将所述控制单元布置在所述功率单元的顶侧上而使所述接触元件贴靠在功率单元的至少一个接触面上以便与所述至少一个功率构件形成电和/或热接触。
功率模块例如可以设计为换流器。例如可以设计为功率-MOSFET或设计为IGBT的所述至少一个功率构件布置在冷却体上并且与冷却体热耦连以排出由所述至少一个功率构件在运行期间产生的废热。尤其地，所述至少一个功率构件与冷却体的顶侧相连。
在冷却体顶侧上的围绕功率构件的区域以及功率构件本身被绝缘层覆盖、尤其完全覆盖。绝缘层例如可以是浇铸材料、例如所谓的模塑料，和/或可以包括绝缘膜。为了与至少一个功率构件形成电和/或热接触，例如可使在至少一个功率构件上的接头与电的和/或热的传导元件耦连。所述电的和/或热的传导元件在此可以穿过绝缘层导引到绝缘层的表面上，使得在功率单元的顶侧上只露出传导元件的接触面。传导元件例如可以具有铜。换句话说，功率构件嵌入绝缘层中，其中，在功率单元的顶侧上只有绝缘层的表面以及至少一个接触面(也称为功能岛)是可见的。因此，至少一个功率构件通过绝缘层和冷却体完全封装。在此，至少一个接触面尤其位于功率单元的顶侧上的确定的位置上，尤其直接位于嵌入绝缘层的功率构件的上方。
与至少一个接触面对应地，尤其与至少一个接触面的确定的位置对应地，控制单元具有至少一个接触元件。因此，一旦控制单元以规定方式布置在功率单元的顶侧上，至少一个接触元件则接触功率单元的接触面，并且以此形成与至少一个功率构件的热接触和/或电接触。
因此，在按照本发明的功率模块的情况下，功率单元和控制单元可以有利地实施为分开的，并且在稍后的工艺步骤中例如为了制备完整的功率模块才通过将控制单元布置在功率单元的顶部而组合。功率单元以此例如可以易于标准化，而控制单元可以适应于各个应用。因此，功率模块可以尤其低成本地生产。
通过将至少一个功率构件嵌入绝缘层并且将控制单元布置在功率单元的顶侧上，尤其能无壳体地使用功率模块。换句话说，这意味着功率单元和控制单元不必集成在单独的、具体的壳体中。因此可以制备体积特别小和重量特别轻的功率模块。
尤其优选的是，至少一个接触面和绝缘层的表面齐平地布置，因而通过绝缘层的表面和至少一个接触面构成功率单元的平坦的顶侧。换句话说，功率单元的顶侧构造为由绝缘层表面和功能岛构成的光滑的平面。在此，光滑的或平坦的面指的是在测量误差和制造公差方面可以被称为光滑的或平坦的面。通过功率单元的平坦的顶侧使得功率单元被设计得尤其紧凑。
优选地，在冷却体的顶侧上施加至少一个电导体条轨，所述至少一个导体条轨通过电连接元件与至少一个功率构件电连接，并且所述电连接元件被绝缘层覆盖。在此，电连接元件优选为能导电的面，例如铜面，其借助平面式构建和连接工艺制造。这种平面式构建和连接工艺可以是例如西门子开发的称为SiPLIT(Siemens Planar InterconnectTechnology)的技术。通过使得电连接元件同样被绝缘层覆盖或包围，电连接元件被特别好地保护免受外部影响，例如振动和环境影响。因而可以确保功率构件与至少一个导体条轨的可靠的电连接。电连接元件还可以例如设计为分流电阻器(Shunt-Widerstand)，以额外地将电流测量集成在功率模块中。因此，可以制备特别可靠的功率模块，并且可以优化功率模块的冷却。
还可以规定，借助所谓的倒装芯片技术将至少一个功率构件在功率单元内部施加于冷却体顶侧上。倒装芯片安装是借助所谓的凸起触点来触点接通至少一个功率构件的构建和连接技术的方法。在此，芯片直接地、即没有另外的接头引线或者没有电连接元件地，以其有效的接触侧或端子向下、即朝向冷却体安装。这导致特别小的尺寸或尺度和短的导体长度，以此使得功率模块具有特别低的模块电感。
根据优选的实施方式，在至少一个功率构件和冷却体的顶侧之间仅布置一个用于将至少一个功率构件与冷却体的顶侧以材料接合的方式相连的连接层。这种连接层例如可以是焊料层或烧结层。在此，在至少一个功率构件和冷却体的顶侧之间不布置实体部件、尤其不布置电路板或不布置陶瓷基底。因而在至少一个功率构件的运行期间产生的热量可以特别好地和有效地导出到冷却体。
对此备选的是，至少一个功率构件可以直接或径直地布置在冷却体的顶侧上并且通过向绝缘层的表面上和/或向至少一个接触面施加持续的压力来与冷却体的顶侧以摩擦接合的方式相连。按照该实施例，仅通过施加持续的压力将功率构件压在冷却体的顶侧上，以省掉钎焊层或烧结层。换句话说，这实现无钎焊式的和无烧结式的构件接触。这种压力接触技术尤其避免在使用条件下的震动或振动的情况下功率构件或芯片从冷却体的顶侧脱离。这尤其在大电流应用中是有利的。在至少一个功率构件借助倒装芯片技术的电接触的情况下，至少一个功率构件直接布置在接触面如导体条轨上，布置在冷却体的顶侧上，并且在此在持续的压力下压紧。
被证明有利的是，控制单元的至少一个接触元件设计为冷却元件和/或设计为电的压力接触元件，其中，用于摩擦接合式连接的压力通过冷却元件和/或通过压力接触元件在布置在至少一个接触面上以接触至少一个功率构件的情况下施加。这种冷却元件例如可以是冷却柱，必要时与用于排出热量的热管(所谓的导热管)结合。因而既可以实现特别可靠地固定至少一个功率构件，又可以实现至少一个功率构件的双侧冷却，即通过冷却体和冷却柱的冷却。额外地，绝缘层可以是弹性的，使得可以借助冷却元件或冷却结构特别好地将机械压力施加到至少一个功率构件上。以此还可以通过热机械脱耦来增加功率模块的可靠性。
压力接触元件例如可以是在控制单元上伸出的或集成在控制单元中预成形的接触块，例如铜块，其通过将控制单元布置在功率单元上而向接触面施加持续的压力，并且以此特别好地固定至少一个功率构件。压力接触元件也可以设计为弹簧接触元件。
本发明的改进设计方案规定，冷却体设计为涂覆有电绝缘导热材料的冷却板，其中，电绝缘导热材料的表面构成冷却体的顶侧。冷却板例如可以是例如涂覆有氮化铝或氮化硅作为电绝缘导热材料的铝板。氮化铝和氮化硅的优点是具有特别高的导热性，并且因此特别适于冷却功率模块。电绝缘导热材料例如可以作为板、膜或通过喷涂施加于冷却板上。然后在该电绝缘导热材料上施加例如至少一个导体条轨和/或至少一个功率构件的连接层、例如焊料或烧结膏。
在本发明的一个设计方案中，控制单元包括电路板和至少一个用于控制功率单元的至少一个功率构件的元器件。所述至少一个元器件例如可以是驱动器芯片和/或逻辑电路和/或控制装置。控制单元的所述至少一个元器件可以与接触元件相连，使得在控制单元布置在功率单元上时，所述至少一个元器件与功率单元的功率构件电连接，例如以便控制所述至少一个功率构件。
另一个实施方式规定，电路板具有至少一个用于检测功率模块的物理特性的传感器元件。至少一个传感器元件例如可以是用于测量功率模块的温度的温度传感器。至少一个传感器元件尤其设计为将检测到的物理特性如检测到的温度例如传送给上级控制单元。
可以规定，电路板具有至少两个层，并且所述至少一个元器件和/或所述至少一个传感器元件布置在所述至少两个层之间。换句话说，电路板例如设计为所谓的多层电路板，其中，所述至少一个元器件和/或所述至少一个传感器元件布置在所述两个层之间的凹空部中并且因此被这两个层完全包围。这意味着所述至少一个元器件和/或所述至少一个传感器元件嵌入到电路板中。在该电路板内和/或电路板上例如可以配设用于功率单元的至少一个功率构件的驱动器端子和负载端子。得到的优点是，为制造负载端子时不必投入额外的耗费，并且可以避免负载端子制造过程伴随的不可靠性。
本发明的有利实施方式规定，至少两个层的第一层直接沉积在功率单元的顶侧上并且与功率单元的顶侧以材料接合的方式相连，所述至少一个元器件和/或所述至少一个传感器元件布置在第一层上，并且至少两个层中的第二层直接沉积在第一层上，其中，第二层覆盖所述至少一个元器件和/或所述至少一个传感器元件。换句话说，控制单元的所述至少一个元器件和/或至少一个传感器元件嵌在两个层之间，并且整个控制单元通过第一层与功率单元的顶侧的材料接合式连接而与功率单元以材料接合的方式连接。单个的层例如可以作为所谓的预浸层层压。通过将层直接施加功率单元的顶侧上和随之控制单元与功率单元的材料接合式的连接，有利地实现了特别紧凑的、高集成度和可靠性的功率模块。
可以规定，控制单元、尤其电路板在控制单元的底侧上具有至少一个接触元件，并且所述至少一个接触元件构造为，通过将控制单元布置在功率单元的顶侧上而使所述至少一个接触元件贴靠在所述至少一个接触面上以便与至少一个功率构件形成电和/或热接触。电路板形式的控制单元例如可以是预制电路板，所述预制电路板例如通过弹簧触点或卡扣连接压紧在功率单元的顶侧上。所述至少一个接触元件例如可以是区域式集成在电路板中的铜块，和/或在控制单元的整个厚度上连续地布置在控制单元中。对压紧的备选或补充方案是，至少一个接触元件可以与至少一个对应的接触面钎焊，并且以此将控制单元以材料接合的方式与功率单元相连。
还可以规定，控制单元具有至少一个对应于接触面的连续的凹空部，并且所述凹空部被布置为，在将控制单元布置在功率单元的顶侧上时，所述凹空部与至少一个接触面对准，其中，用于与至少一个功率构件形成接触的至少一个接触元件布置在所述连续的凹空部中。电路板形式的控制单元可以是具有凹空部、尤其在电路板整个厚度上的凹空部的预制电路板。在预制电路板布置在功率单元上时，至少一个凹空部如下所述地布置在至少一个接触面的上方，即可通过位于所述接触面上方的凹空部触及所述接触面。不过也可以规定，电路板以层直接沉积在功率单元的绝缘层的表面上，其中，在沉积时至少一个接触面不被电路板的层覆盖。换句话说，至少一个接触面上方的位置或者在至少一个功率构件上方的位置可以保持凹空。为了建立热的和/或电的接触，可以穿过电路板或穿过电路板的凹空部进行贯穿接通，方法是将至少一个接触元件布置在凹空部中。
总而言之，通过由功率单元和控制单元的结合构成高度紧凑、高度集成和智能的功率模块，所述功率模块的底侧通过冷却体的底侧构成，所述功率模块的顶侧通过控制单元的顶侧构成。所述功率模块例如可以被实现为立方体形的、高度紧凑的块，其例如仅在控制单元的顶侧上具有用于接触功率单元的电的和/或热的接触元件。功率模块的其他表面区域是电绝缘的，以此使得整个功率模块能够无壳体式地使用，例如用作换流器。
本发明还涉及一种用于制造功率模块的方法，所述功率模块带有功率单元和用于控制所述功率单元的控制单元。在该方法中，在功率单元的冷却体上布置功率构件，并且冷却体和至少一个功率构件通过绝缘层覆盖。在此，功率单元的底侧通过冷却体的底侧构成，并且功率单元的顶侧通过至少一个、与至少一个功率构件以热和/或电的方式耦连的接触面以及绝缘层的围绕所述至少一个接触面的表面构成。通过将控制单元布置在功率单元的顶侧上，使得控制单元的至少一个与功率单元的至少一个接触面对应的接触元件布置成贴靠在功率单元的至少一个接触面上以便与至少一个功率构件形成电和/或热接触。
参照按照本发明的功率模块介绍的实施方式及其优点相应地适用于按照本发明的方法。
下面根据优选示例性实施例并参照附图进一步阐述本发明。附图中：
图1示意性示出按照本发明的功率模块的实施方式，
图2以俯视图示意性示出按照本发明的功率模块的实施方式的功率单元。
在附图中，相同或功能相同的元件配设相同的附图标记。
下面说明的实施例是本发明的优选实施方式。在实施例中，实施方式的所述要素分别可以表示本发明单独的视为相互无关联的特征，这些特征也可以分别相互无关联地改进本发明，并且因此也可以单独地或以不同于所述结合方式地被视为本发明的组成部分。此外，所述实施方式也可以由本发明的其他已述特征补充。
图1示出了具有功率单元2和用于控制功率单元2的控制单元3的功率模块1。功率模块1例如可以设计为AC/DC转换器或DC/DC转换器。功率单元2包括具有冷却板5以及覆盖冷却板5的电绝缘导热材料6的冷却体4。尤其仅在冷却板5本身由导电材料、例如铝制成时才必须配设电绝缘导热材料6。电绝缘的导热材料6例如可以是氮化硅、氮化铝或导热电绝缘的有机材料，并且可以作为板、膜或通过喷涂施加于冷却板5上。电绝缘导热材料6的表面构成冷却体4的顶侧8。
冷却体4在此用于冷却功率单元2的多个功率构件7，这些功率构件例如可以设计为IGBT或设计为功率晶体管，并且这些功率构件布置在冷却体4的顶侧8上并与之相连。为了将功率构件7与冷却体4的顶侧8以材料接合的方式连接，可以向冷却体4的顶侧8上施加结构化的金属面9、10。为了以材料接合的方式连接功率构件7，可以向金属面9上施加连接物料11、例如焊料或烧结膏，其中，金属面9和连接物料11构成直接布置在冷却体4的顶侧8和功率构件7之间的连接层。也就是说，在冷却体4的顶侧8和功率构件7之间仅布置连接层9、11。在此，在功率构件7和冷却体4的顶侧8之间没有布置其他的实际的元器件、尤其没有布置电路板或没有布置陶瓷基底。
也可以规定功率构件7直接地、即不提供连接层9、11地布置在冷却体4的顶侧8上，并且在持续的压力下与冷却体4的顶侧8以摩擦接合的方式相连。然后就可以提供无焊接或无烧结的功率单元2。
金属面10例如设计为导体条轨，功率构件7通过所述导体条轨相互电连接例如用于将功率构件7连成电路。功率构件7例如可以通过电连接元件13与导体条轨10电连接。
功率构件7以及冷却体4的顶侧8被绝缘层12覆盖。绝缘层12在此可以以多个层沉积，并且包括例如所谓的模塑料、即浇铸料和/或绝缘膜。在施加绝缘层12的第一子层之后，例如可以将金属层施加于该子层上，所述金属层构成电连接元件13，并且以此将功率构件7与导体条轨10电连接。在功率构件7上方的电连接元件13、即功率构件7上方的金属面可以用未示出的薄的能导热的但是电绝缘的层覆盖，以实现功率构件7在两侧冷却。
然后施加绝缘层12的另外的子层，另外的子层完全覆盖电连接元件13以及功率构件7。在此，功率单元2的顶侧14由绝缘层12的表面15以及电连接元件13的接触面16构成。为此，绝缘层12和电连接元件13的材料尤其可以填充直至一致的平面，使得功率单元2的顶侧14设计为平坦的面。功率单元2的底侧17通过冷却体4的底侧形成。
图2示出功率单元2的顶侧14上的俯视图。在此可以看到，功率单元2的顶侧14构造为平坦的、光滑的面，该面包括接触面16以及绝缘层12的表面15。
在功率单元2的顶侧14上布置控制单元3，控制单元3尤其呈现为用于功率单元2的电连接。控制单元3具有对应于接触面16的接触元件18以便与功率构件7形成电和/或热接触，接触元件18例如构造为铜块和/或压力接触元件和/或弹簧触点和/或冷却柱。接触元件18在此布置成贴靠在接触面16上，并且例如在此钎焊或借助弹簧夹或螺纹连接19压在接触面16上。
控制单元3例如可以具有多层的电路板20。电路板20可以是单独的部件，例如通过螺纹连接19或弹簧夹压在功率单元2的顶侧14上。然而，电路板20也可以以多层直接沉积在功率单元2的顶侧14上，并且因而与功率单元2的顶侧14以材料接合的方式相连。电路板的单个的层例如可以是所谓的预浸层。
元器件21、22、23可以集成到或嵌入到电路板20中。元器件21例如可以是驱动器芯片，其可以通过另外的电连接元件24与功率单元2的电连接元件13电连接，并且因而可以与功率构件7电连接。元器件22例如可以是传感器元件、例如用于测量功率模块1的温度的温度传感器。以温度传感器形式的元器件22例如可以将所测取的测量值(即温度)例如以无线方式传输给上级控制单元。元器件23例如可以是同样通过电连接元件24与功率单元2的电连接元件13相连的逻辑芯片。
由于功率构件7在功率单元2内部嵌入绝缘层12中并且因此被完全封装，此外，控制单元3的接触元件18精确地布置在功率单元2的顶侧14上，因此构成特别紧凑的、高度集成和智能的功率模块1，其尤其能够在没有壳体的情况下在操作上和以预期方式例如用作换流器。

Claims (11)

1.一种功率模块(1)，其具有
-功率单元(2)，所述功率单元具有冷却体(4)、至少一个布置在冷却体(4)上的功率构件(7)和覆盖冷却体(4)和所述至少一个功率构件(7)的绝缘层(12)，其中，功率单元(2)的底侧(17)通过冷却体(4)的底侧构成，并且功率单元(2)的顶侧(14)通过与至少一个功率构件(7)以热和/或电的方式耦连的至少一个接触面(16)以及绝缘层(12)的围绕所述至少一个接触面(16)的表面(15)构成，和
-用于控制功率单元(2)的控制单元(3)，所述控制单元(3)具有至少一个、对应于功率单元(2)的至少一个接触面(16)的接触元件(18)，所述接触元件(18)被布置成，通过将所述控制单元(3)布置在所述功率单元(2)的顶侧(14)上而使所述接触元件(18)贴靠在功率单元(2)的至少一个接触面(16)上以便与所述至少一个功率构件(7)形成电和/或热接触，
-其中，所述至少一个功率构件(7)直接布置在冷却体(4)的顶侧(8)上并且借助弹簧夹或螺纹连接(19)通过向绝缘层(12)的表面(15)上和/或向至少一个接触面(16)上施加压力而与冷却体(4)的顶侧(8)以摩擦接合的方式相连，
-其中，所述控制单元(3)的至少一个接触元件(18)设计为冷却元件和/或设计为电的压力接触元件，其中，在所述冷却元件和/或所述压力接触元件被布置在至少一个接触面上(16)以接触至少一个功率构件(7)的情况下，用于摩擦接合式连接的压力通过所述冷却元件和/或通过所述压力接触元件施加，
-其中，所述控制单元(3)包括电路板(20)和至少一个用于控制功率单元(2)的至少一个功率构件(7)的元器件(21、23)，
-其中，所述电路板(20)具有至少两个层，并且所述至少一个元器件(21、23)布置在所述至少两个层之间，
-其中，所述至少两个层的第一层直接沉积在功率单元(2)的顶侧(14)上并且与功率单元(2)的顶侧(14)以材料接合的方式相连，所述至少一个元器件(21、23)布置在所述第一层上，并且所述至少两个层中的第二层直接沉积在所述第一层上，其中，所述第二层覆盖所述至少一个元器件(21、23)。
2.按照权利要求1所述的功率模块(1)，其中，所述至少一个接触面(16)和绝缘层(12)的表面(15)齐平地布置，并且通过绝缘层(12)的表面(15)和至少一个接触面(16)构成功率单元(2)的平坦的顶侧(14)。
3.按照权利要求1所述的功率模块(1)，其中，在冷却体(4)的顶侧(8)上施加至少一个电导体条轨(10)，所述至少一个导体条轨(10)通过电连接元件(13)与至少一个功率构件(7)电连接，并且所述电连接元件(13)被绝缘层(12)覆盖。
4.按照权利要求1所述的功率模块(1)，其中，借助所谓的倒装芯片技术将至少一个功率构件(7)在功率单元内部(2)施加于冷却体(4)的顶侧(8)上，其中，至少一个功率构件(7)的电和/或热接头直接布置在施加于冷却体(4)的顶侧(8)上的导体条轨(10)上用于电接触。
5.按照权利要求1所述的功率模块(1)，其中，所述冷却体(4)设计为涂覆有电绝缘导热材料(6)的冷却板(5)，其中，所述电绝缘导热材料(6)的表面构成所述冷却体(4)的顶侧(8)。
6.按照权利要求1所述的功率模块(1)，其中，所述电路板(20)具有至少一个用于检测所述功率模块(1)的物理特性的传感器元件(22)。
7.按照权利要求6所述的功率模块(1)，其中，所述至少一个传感器元件(22)布置在所述至少两个层之间。
8.按照权利要求7所述的功率模块(1)，所述至少一个传感器元件(22)布置在所述第一层上，其中，所述第二层覆盖所述至少一个传感器元件(22)。
9.按照权利要求1所述的功率模块(1)，其中，所述控制单元(3)在控制单元(3)的底侧上具有所述至少一个接触元件(18)，并且所述至少一个接触元件(18)被构造为通过将控制单元(3)布置在功率单元(2)的顶侧(14)上而使所述至少一个接触元件(18)贴靠在所述至少一个接触面(16)上以便与至少一个功率构件(7)形成电和/或热接触。
10.按照权利要求1所述的功率模块(1)，其中，所述控制单元(3)具有至少一个对应于接触面(16)的连续的凹空部，所述凹空部被布置为，在将控制单元(3)布置在功率单元(2)的顶侧(14)上时所述凹空部与所述至少一个接触面(16)对准，其中，用于与至少一个功率构件(7)形成接触的至少一个接触元件(18)布置在所述连续的凹空部中。
11.一种用于制造功率模块(1)的方法，所述功率模块(1)带有功率单元(2)和用于控制所述功率单元(2)的控制单元(3)，在该方法中，在功率单元(2)的冷却体(4)上布置至少一个功率构件(7)，并且冷却体(4)和至少一个功率构件(7)通过绝缘层(12)覆盖，其中，功率单元(2)的底侧(17)通过冷却体(4)的底侧构成，并且功率单元(2)的顶侧(14)通过至少一个、与至少一个功率构件(7)以热和/或电的方式耦连的接触面(16)以及绝缘层(12)的围绕所述至少一个接触面(16)的表面(15)构成，并且对于控制单元(3)，通过将控制单元(3)布置在功率单元(2)的顶侧(14)上来将控制单元(3)的至少一个与功率单元(2)的至少一个接触面(16)对应的接触元件(18)布置成贴靠在功率单元(2)的至少一个接触面(16)上以便与至少一个功率构件(7)形成电和/或热接触，
-其中，所述至少一个功率构件(7)直接布置在冷却体(4)的顶侧(8)上并且借助弹簧夹或螺纹连接(19)通过向绝缘层(12)的表面(15)上和/或向至少一个接触面(16)上施加压力而与冷却体(4)的顶侧(8)以摩擦接合的方式相连，
-其中，所述控制单元(3)的至少一个接触元件(18)设计为冷却元件和/或设计为电的压力接触元件，其中，在所述冷却元件和/或所述压力接触元件被布置在至少一个接触面上(16)以接触至少一个功率构件(7)的情况下，用于摩擦接合式连接的压力通过所述冷却元件和/或通过所述压力接触元件施加，
-其中，所述控制单元(3)包括电路板(20)和至少一个用于控制功率单元(2)的至少一个功率构件(7)的元器件(21、23)，
-其中，所述电路板(20)具有至少两个层，并且所述至少一个元器件(21、23)布置在所述至少两个层之间，并且
-其中，所述至少两个层的第一层直接沉积在功率单元(2)的顶侧(14)上并且与功率单元(2)的顶侧(14)以材料接合的方式相连，所述至少一个元器件(21、23)布置在所述第一层上，并且所述至少两个层中的第二层直接沉积在所述第一层上，其中，所述第二层覆盖所述至少一个元器件(21、23)。
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