JP6811310B2 - パワーモジュール - Google Patents
パワーモジュール Download PDFInfo
- Publication number
- JP6811310B2 JP6811310B2 JP2019513030A JP2019513030A JP6811310B2 JP 6811310 B2 JP6811310 B2 JP 6811310B2 JP 2019513030 A JP2019513030 A JP 2019513030A JP 2019513030 A JP2019513030 A JP 2019513030A JP 6811310 B2 JP6811310 B2 JP 6811310B2
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- matrix
- power module
- semiconductor device
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
- H01L23/4951—Chip-on-leads or leads-on-chip techniques, i.e. inner lead fingers being used as die pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49544—Deformation absorbing parts in the lead frame plane, e.g. meanderline shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
- H01L23/49551—Cross section geometry characterised by bent parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Die Bonding (AREA)
Description
2 接触箇所
3 リードフレーム
4 導体路
5 延長片
6 斜片
7 リードフレームマトリックス
8 接触箇所
Claims (5)
- 半導体デバイス(1)とリードフレームマトリックス(7)とを含むパワーモジュールであって、
前記半導体デバイス(1)が、上面に複数の接触箇所(2)を有し、
前記リードフレームマトリックス(7)が、マトリックス材料中に封止されるとともに、互いに分離された複数の導体路(4)を有し、
前記複数の導体路(4)が、前記マトリックス材料から下方に突出する複数の弾性接点を有し、
前記複数の接触箇所(2)と前記複数の弾性接点が、接触圧力により電気的に接触させられた、
パワーモジュール。 - 前記複数の導体路(4)が銅製導体路であることを特徴とする請求項1記載のパワーモジュール。
- 前記マトリックス材料がエポキシ樹脂であることを特徴とする請求項1または2記載のパワーモジュール。
- 前記複数の導体路(4)がマトリックスで封止するために容器内に収納可能にされ、容器とリードフレームマトリックス(7)から成る結合体がDCB上に取り付けられることを特徴とする請求項1から3のいずれか1項に記載のパワーモジュール。
- 容器とリードフレームマトリックス(7)から成る前記結合体が弾性的に接触されるとともに、電気的に絶縁性の軟性封止材で充填されることを特徴とする請求項4記載のパワーモジュール。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102016217007.4A DE102016217007A1 (de) | 2016-09-07 | 2016-09-07 | Leistungsmodul |
DE102016217007.4 | 2016-09-07 | ||
PCT/EP2017/067094 WO2018046165A1 (de) | 2016-09-07 | 2017-07-07 | Leistungsmodul |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019531600A JP2019531600A (ja) | 2019-10-31 |
JP6811310B2 true JP6811310B2 (ja) | 2021-01-13 |
Family
ID=59363133
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019513030A Active JP6811310B2 (ja) | 2016-09-07 | 2017-07-07 | パワーモジュール |
Country Status (6)
Country | Link |
---|---|
US (1) | US20190214340A1 (ja) |
EP (1) | EP3488466A1 (ja) |
JP (1) | JP6811310B2 (ja) |
CN (1) | CN109661724A (ja) |
DE (1) | DE102016217007A1 (ja) |
WO (1) | WO2018046165A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102022209559A1 (de) | 2022-09-13 | 2024-02-15 | Zf Friedrichshafen Ag | Halbbrückenmodul |
WO2024114961A1 (de) | 2022-11-30 | 2024-06-06 | Siemens Aktiengesellschaft | Halbleiteranordnung mit zumindest einem halbleiterelement |
EP4379789A1 (de) | 2022-11-30 | 2024-06-05 | Siemens Aktiengesellschaft | Halbleiteranordnung mit zumindest einem halbleiterelement |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0064383A3 (en) | 1981-05-06 | 1984-06-27 | LUCAS INDUSTRIES public limited company | A semi-conductor package |
US4395084A (en) | 1981-07-06 | 1983-07-26 | Teledyne Industries, Inc. | Electrical socket for leadless integrated circuit packages |
JP2882143B2 (ja) * | 1991-12-10 | 1999-04-12 | 富士電機株式会社 | 半導体装置の内部配線構造 |
JPH06216288A (ja) * | 1993-01-20 | 1994-08-05 | Hitachi Ltd | 半導体装置および該半導体装置用の外囲器 |
JPH09213878A (ja) * | 1996-01-29 | 1997-08-15 | Toshiba Corp | 半導体装置 |
JP2002164503A (ja) * | 2001-10-19 | 2002-06-07 | Hitachi Ltd | パワー半導体装置 |
JP4453498B2 (ja) * | 2004-09-22 | 2010-04-21 | 富士電機システムズ株式会社 | パワー半導体モジュールおよびその製造方法 |
JP4459883B2 (ja) * | 2005-04-28 | 2010-04-28 | 三菱電機株式会社 | 半導体装置 |
JP2007081155A (ja) * | 2005-09-14 | 2007-03-29 | Hitachi Ltd | 半導体装置 |
JP2009038077A (ja) * | 2007-07-31 | 2009-02-19 | Yamaha Corp | プリモールドパッケージ型半導体装置及びその製造方法、モールド樹脂体、プリモールドパッケージ、マイクロフォンチップパッケージ |
US8716069B2 (en) * | 2012-09-28 | 2014-05-06 | Alpha & Omega Semiconductor, Inc. | Semiconductor device employing aluminum alloy lead-frame with anodized aluminum |
JP2014183242A (ja) * | 2013-03-20 | 2014-09-29 | Denso Corp | 半導体装置およびその製造方法 |
JP6304974B2 (ja) * | 2013-08-27 | 2018-04-04 | 三菱電機株式会社 | 半導体装置 |
-
2016
- 2016-09-07 DE DE102016217007.4A patent/DE102016217007A1/de not_active Ceased
-
2017
- 2017-07-07 EP EP17740361.5A patent/EP3488466A1/de not_active Withdrawn
- 2017-07-07 CN CN201780054327.9A patent/CN109661724A/zh active Pending
- 2017-07-07 WO PCT/EP2017/067094 patent/WO2018046165A1/de unknown
- 2017-07-07 JP JP2019513030A patent/JP6811310B2/ja active Active
- 2017-07-07 US US16/330,845 patent/US20190214340A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2018046165A1 (de) | 2018-03-15 |
DE102016217007A1 (de) | 2018-03-08 |
US20190214340A1 (en) | 2019-07-11 |
JP2019531600A (ja) | 2019-10-31 |
CN109661724A (zh) | 2019-04-19 |
EP3488466A1 (de) | 2019-05-29 |
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