JP5218009B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5218009B2 JP5218009B2 JP2008319392A JP2008319392A JP5218009B2 JP 5218009 B2 JP5218009 B2 JP 5218009B2 JP 2008319392 A JP2008319392 A JP 2008319392A JP 2008319392 A JP2008319392 A JP 2008319392A JP 5218009 B2 JP5218009 B2 JP 5218009B2
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Description
本発明はこのような点に鑑みてなされたものであり、信頼性の高い半導体装置を提供することを目的とする。
<第1の実施の形態>
図1は第1の実施の形態に係る半導体装置の要部断面模式図である。
また、半導体装置1においては、半導体素子20の電極20bが配置されている主面とは反対側の主面に配置されている、もう一方の電極(表面電極)20aには、リードフレーム、或いはヒートスプレッダとして機能する導電板30が密接している。
例えば、導電板30の線膨張係数は、16ppm/℃以上であり、封止用樹脂40の線膨張係数は、15ppm/℃以下である。
そして、導電板30と電極20aとの密接は、例えば、屈曲部30aを、例えば、治具(図示しない)等を用いて上方から下方に向かい押圧することによって、電極20aに対し導電板30を加圧接触させながら、半導体素子20及び導電板30を封止用樹脂40により封止することにより達成される。
尚、上述した絶縁板10aの材質は、例えば、窒化珪素(SiN)、アルミナ(Al2O3)、窒化アルミニウム(AlN)の少なくとも何れかを含有するセラミック焼結体が適用される。
また、半田層11としては、上記の錫(Sn)−銀(Ag)系の鉛フリーの半田の他に、錫(Sn)−アンチモン(Sb)系の鉛フリー半田を用いてもよい。
次に、半導体装置の変形例について説明する。尚、以下に例示する図面では、図1と同一の部材には、同一の符号を付している。
図2及び図3は第2の実施の形態に係る半導体装置の要部断面模式図である。
半導体装置2においては、半導体素子20の電極20aには、上述したように、導電板30が密接している。また、導電板30は、屈曲部30aを備えている。
このような導電板30及び封止用樹脂40の線膨張係数を調節することにより、半導体装置2においては、導電板30と電極20aとの密接状態が維持されている。
特に、半導体装置2においては、電極20aに接触させる導電板30の表面にディンプル加工を施し、導電板30の当該表面に突起部30bを配置している。即ち、電極20aに接触する導電板30の部分に、突起部30bが形成されている。そして、突起部30bを電極20aに圧入している。
尚、突起部30bの形状は、図2に例示する半球状の突起とは限らない。例えば、図3に例示する三角錐状の突起部30cを導電板30に備えてもよい。このような突起部30cを導電板30に備えても、突起部30bを導電板30に備えた場合と同様の効果が得られる。
図4は第3の実施の形態に係る半導体装置の要部断面模式図である。
半導体装置3においては、絶縁基板10を基体とし、当該絶縁基板10上に、半田層11を介して、半導体素子20,21が搭載されている。
また、半導体素子20,21の電極20b,21bが配置されている主面とは反対側の主面に配置されている、もう一方の電極(表面電極)20a,21aには、導電板30が架橋するように、当該電極20a,21aに密接している。尚、導電板30は、屈曲部30aを備えている。
また、半導体装置3においては、導電板30の屈曲部30aに、銅(Cu)を主成分とする外部端子31が密接している。
<第4の実施の形態>
図5は第4の実施の形態に係る半導体装置の要部断面模式図である。
半導体装置4においては、半導体素子20,21の電極20b,21bが半田層11を介して、金属箔10cに接合している。また、半導体素子20,21の電極20a,21aには、導電板30が密接している。尚、導電板30は、屈曲部30aを備えている。
特に、半導体装置4においては、外部端子32の端部32eが屈曲部30aを挟持していることから、端部32eが封止用樹脂40により上下の方向から加圧される。これにより、屈曲部30aと端部32eとの接触強度がより向上する。
図6は第5の実施の形態に係る半導体装置の要部断面模式図である。
この図では、導電板30と外部端子31との接触状態が例示されている。図示するように、外部端子31の端部31eには、当該端部31eから延在させた突起部31bが複数本配置され、当該突起部31bが屈曲部30aに形成された貫通孔30hに貫通している。
10 絶縁基板
10a 絶縁板
10b,10c 金属箔
11 半田層
20,21 半導体素子
20a,20b,21a,21b 電極
30 導電板
30a 屈曲部
30b,30c,31b 突起部
30h 貫通孔
31,32 外部端子
31e,32e 端部
40 封止用樹脂
Claims (5)
- 半導体素子と、
前記半導体素子の電極に加圧接触される導電板と、
前記半導体素子及び前記導電板を封止する封止用部材と、
を有し、前記封止用部材は、前記電極に前記導電板を加圧接触しながら前記半導体素子及び前記導電板を封止するものであって、線膨張係数が前記導電板の線膨張係数よりも小さいことを特徴とする半導体装置。 - 前記電極に加圧接触する側の前記導電板の表面に、前記電極に圧入される突起部が形成されていることを特徴とする請求項1記載の半導体装置。
- 前記封止用部材内において、前記導電板に外部端子が加圧接触し、前記封止用部材の線膨張係数が前記外部端子の線膨張係数よりも小さいことを特徴とする請求項1記載の半導体装置。
- 前記封止用部材内において、前記導電板が外部端子に挟持され、前記封止用部材の線膨張係数が前記外部端子の線膨張係数よりも小さいことを特徴とする請求項1記載の半導体装置。
- 前記導電板に加圧接触する側の前記外部端子の表面に、突起部が形成され、前記導電板に設けられた貫通孔に前記突起部が貫通していることを特徴とする請求項3記載の半導体装置。
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JP2951375B2 (ja) * | 1990-07-31 | 1999-09-20 | 古河電気工業株式会社 | 低風騒音低コロナ騒音架空電線 |
US9091461B2 (en) | 2011-04-27 | 2015-07-28 | Blue Sunny Skies Llc | Grounding system for photovoltaic arrays |
JP2013232445A (ja) * | 2012-04-27 | 2013-11-14 | Toshiba Corp | 半導体装置 |
JP6230238B2 (ja) * | 2013-02-06 | 2017-11-15 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
JP6385234B2 (ja) * | 2014-10-16 | 2018-09-05 | 三菱電機株式会社 | 半導体装置 |
GB2544751B (en) * | 2015-11-24 | 2017-11-22 | Future Tech (Sensors) Ltd | Multi-Layer Electrically Conductive Sensors |
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JPH0212863A (ja) * | 1988-06-30 | 1990-01-17 | Matsushita Electron Corp | 樹脂封止型半導体装置 |
JP3349416B2 (ja) * | 1997-11-11 | 2002-11-25 | 株式会社三社電機製作所 | 電力半導体装置 |
JP3439417B2 (ja) * | 2000-03-23 | 2003-08-25 | Necエレクトロニクス株式会社 | 半導体パッケージ用接続導体、半導体パッケージ、及び半導体パッケージの組立方法 |
JP4395096B2 (ja) * | 2005-04-11 | 2010-01-06 | 三菱電機株式会社 | 半導体装置 |
JP2007157863A (ja) * | 2005-12-02 | 2007-06-21 | Hitachi Ltd | パワー半導体装置及びその製造方法 |
JP4764983B2 (ja) * | 2006-07-25 | 2011-09-07 | 富士電機株式会社 | 半導体装置の製造方法 |
JP5103863B2 (ja) * | 2006-10-16 | 2012-12-19 | 富士電機株式会社 | 半導体装置 |
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