JP5690652B2 - 2個の接合素子の低温加圧焼結接合方法およびそれによって製造される構成体 - Google Patents
2個の接合素子の低温加圧焼結接合方法およびそれによって製造される構成体 Download PDFInfo
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- JP5690652B2 JP5690652B2 JP2011114546A JP2011114546A JP5690652B2 JP 5690652 B2 JP5690652 B2 JP 5690652B2 JP 2011114546 A JP2011114546 A JP 2011114546A JP 2011114546 A JP2011114546 A JP 2011114546A JP 5690652 B2 JP5690652 B2 JP 5690652B2
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Description
a)第1接触面を有する第1接合素子であって、この接触面は好ましくは貴金属表面を有する第1接合素子を用意するステップ。次に、前記接触面を、超音波の作用によって不純物なしの状態にすることが望ましい。この超音波の作用は方法の次のステップの前に終了させることが可能であるが、別の不純物を防止するため、前記作用を次の処理ステップと一時的に重ね合せ得ることが特に有利である。
b)焼結金属の粒子、好ましくは銀粒子と溶剤とから構成される焼結ペーストからなる層を第1接触面に施与するステップ。
c)焼結ペーストに温度を加えて、まだ相互に接合されていない焼結金属の粒子から構成される焼結層を形成するように溶剤を追い出すステップ。
d)その焼結層に、例えばグリセリンのような好ましくは極性の液体を施与するステップ。前記液体は、溶剤が追い出された後に、第2接合素子を固定するための僅かな接着力のみを有するものであり、第2接合素子を焼結層の上に固定する次のステップにおいて役立つ。
e)第2接合素子を、その第2接触面が焼結ペーストからなる層の上に位置するように、あるいは、正確に言えば、ステップd)による液体が存在する場合は正確にその液体の上に位置するように配置するステップ。
f)接合素子を相互に固定するために、接着剤を、焼結層と第2接合素子との縁部領域に、その接着剤が第1接合素子にも接触する状態で塗着するステップ。この場合、好ましくはシリコーンである接着剤を、構成体の少なくとも2箇所においてのみ施与することで十分である可能性もある。しかし、前記の接着剤を上記の全領域の周囲に塗着することが特に有利である。
g)接合素子の間の材料密着結合の低温加圧焼結接合を形成するために、構成体にさらに温度および圧力を加えるステップ。この場合、ステップd)に従って焼結層と第2接合素子との間に塗着することができる液体は追い出され、焼結層は均質な焼結金属層に転化される。この場合、均質な焼結金属層というのは、最大直径が10μmの空洞を含む金属層を意味すると理解する。
12 絶縁材料体
14 導体トラック
16 第1接触面
18 貴金属表面
20 超音波
22 温度作用
30 焼結ペースト
32 焼結層
34 焼結金属層
40 液体
50 第2接合素子(パワー半導体素子)
56 第2接触面
60 接着剤
62 接着剤
Claims (8)
- 低温加圧焼結接合によって相互に材料密着結合で接合される第1接合素子(10)と第2接合素子(50)を含む構成体の製造方法であって、前記両方の接合素子(10、50)は、それぞれ、もう一方のそれぞれの前記接合素子に接合されるべき接触面(16、56)を有し、それら接触面(16、56)の間には焼結金属層(34)が配置される構成体の製造方法において、
a)第1接触面(16)を有する第1接合素子(10)を用意するステップと、
b)焼結金属の粒子と溶剤からなる焼結ペースト(30)の層を前記第1接触面(16)に施与するステップと、
c)前記焼結ペースト(30)に温度(22)を加えて、焼結層(32)を形成するように前記溶剤を追い出すステップと、
d)前記焼結層(32)に液体(40)を施与するステップと、
e)第2接合素子(50)を、それらの第2接触面(56)が前記焼結層(32)の上に位置するように配置するステップと、
f)前記両方の接合素子(10、50)を相互に固定するために、接着剤(60、62)を、前記焼結層(32)と前記第2接合素子(50)との縁部領域に、前記第1接合素子(10)にも接触する状態で塗着するステップと、
g)前記両方の接合素子(10、50)の間で材料密着結合の低温加圧焼結接合を形成するために、前記構成体にさらに温度および圧力を加えるステップであって、前記焼結層(32)が均質な焼結金属層(34)に転化されるステップと、
を含み、ステップd)とf)は、連続的に実施するか、あるいは、選択的にいずれかを実施することが可能であることを特徴とする方法。 - 前記液体(40)が、極性の液体として具現化される、請求項1に記載の方法。
- 前記接着剤(60、62)がシリコーンとして具現化される、請求項1に記載の方法。
- 前記接着剤(60、62)が、前記縁部領域の少なくとも2箇所に施与されるか、あるいは、全周に施与される、請求項1に記載の方法。
- ステップb)が実行される直前に、前記第1接触面(16)とそれを直接取り巻く領域が超音波(20)に曝露される、請求項1に記載の方法。
- ステップb)が実行される直前および実行されている間に、前記第1接触面(16)とそれを直接取り巻く領域が超音波(20)に曝露される、請求項1に記載の方法。
- 請求項1〜6のいずれか一項による方法に従って形成される構成体であり、低温加圧焼結接合によって相互に材料密着結合で接合される第1接合素子(10)と第2接合素子(50)を含む構成体であって、前記両方の接合素子(10、50)は、それぞれ、もう一方のそれぞれの前記接合素子に接合されるべき接触面(16、56)を有しており、さらに、これら接触面(16、56)の間には焼結金属(34)が配置され、この焼結金属(34)は、均質な層として形成され、最大でも10μmの直径の空洞しか有しない構成体。
- 接着剤(60、62)が、前記焼結金属層(34)の縁部領域に塗着され、前記接着剤は両方の接合素子(10、50)と接触する、請求項7に記載の構成体。
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JP2950468B2 (ja) * | 1996-05-17 | 1999-09-20 | サンケン電気株式会社 | 半導体装置 |
JP2001176894A (ja) * | 1999-12-20 | 2001-06-29 | Nec Yamagata Ltd | ダイボンディング用接着ペースト塗布方法及びその装置 |
DE10009678C1 (de) * | 2000-02-29 | 2001-07-19 | Siemens Ag | Wärmeleitende Klebstoffverbindung und Verfahren zum Herstellen einer wärmeleitenden Klebstoffverbindung |
JP2006147643A (ja) * | 2004-11-16 | 2006-06-08 | Seiko Epson Corp | 電子素子の接合方法、電子素子の実装方法、電子装置の製造方法、回路基板、電子機器 |
TWI395253B (zh) * | 2004-12-28 | 2013-05-01 | Mitsumasa Koyanagi | 使用自我組織化功能之積體電路裝置的製造方法及製造裝置 |
JP4947345B2 (ja) * | 2005-11-24 | 2012-06-06 | 三菱マテリアル株式会社 | Au−Sn合金はんだペーストを用いた基板と素子の接合方法 |
DE102005058794A1 (de) | 2005-12-09 | 2007-06-14 | Semikron Elektronik Gmbh & Co. Kg | Vorrichtung und getaktetes Verfahren zur Drucksinterverbindung |
JP2009164203A (ja) * | 2007-12-28 | 2009-07-23 | Mitsubishi Electric Corp | 半導体装置および半導体装置の製造方法 |
DE102008034946B4 (de) * | 2008-07-26 | 2016-05-19 | Semikron Elektronik Gmbh & Co. Kg | Herstellungsverfahren eines Edelmetallverbindungsmittels |
DE102008039828A1 (de) * | 2008-08-27 | 2010-03-04 | W.C. Heraeus Gmbh | Steuerung der Porosität von Metallpasten für den druckfreien Niedertemperatursinterprozess |
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2010
- 2010-05-27 DE DE102010021764.6A patent/DE102010021764B4/de active Active
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2011
- 2011-04-12 EP EP11162103.3A patent/EP2390904A3/de not_active Withdrawn
- 2011-05-23 JP JP2011114546A patent/JP5690652B2/ja not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
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CN102315138B (zh) | 2016-03-02 |
EP2390904A3 (de) | 2014-03-26 |
DE102010021764B4 (de) | 2014-09-25 |
DE102010021764A1 (de) | 2011-12-01 |
EP2390904A2 (de) | 2011-11-30 |
CN102315138A (zh) | 2012-01-11 |
JP2011249801A (ja) | 2011-12-08 |
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