DK1772900T3 - Fabrikationsfremgangsmåde for en indretning med effekthalvlederkomponenter omfattende et tryksintringstrin - Google Patents
Fabrikationsfremgangsmåde for en indretning med effekthalvlederkomponenter omfattende et tryksintringstrinInfo
- Publication number
- DK1772900T3 DK1772900T3 DK06020799.0T DK06020799T DK1772900T3 DK 1772900 T3 DK1772900 T3 DK 1772900T3 DK 06020799 T DK06020799 T DK 06020799T DK 1772900 T3 DK1772900 T3 DK 1772900T3
- Authority
- DK
- Denmark
- Prior art keywords
- manufacturing
- power semiconductor
- component
- semiconductor components
- sintering step
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Die Bonding (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005047566A DE102005047566C5 (de) | 2005-10-05 | 2005-10-05 | Anordnung mit einem Leistungshalbleiterbauelement und mit einem Gehäuse sowie Herstellungsverfahren hierzu |
Publications (1)
Publication Number | Publication Date |
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DK1772900T3 true DK1772900T3 (da) | 2012-07-23 |
Family
ID=37603438
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK06020799.0T DK1772900T3 (da) | 2005-10-05 | 2006-10-04 | Fabrikationsfremgangsmåde for en indretning med effekthalvlederkomponenter omfattende et tryksintringstrin |
Country Status (5)
Country | Link |
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EP (1) | EP1772900B1 (da) |
JP (1) | JP5193452B2 (da) |
AT (1) | ATE555498T1 (da) |
DE (1) | DE102005047566C5 (da) |
DK (1) | DK1772900T3 (da) |
Families Citing this family (22)
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US8164176B2 (en) * | 2006-10-20 | 2012-04-24 | Infineon Technologies Ag | Semiconductor module arrangement |
DE102007022336A1 (de) * | 2007-05-12 | 2008-11-20 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitersubstrat mit Metallkontaktschicht sowie Herstellungsverfahren hierzu |
DE102007022338B4 (de) * | 2007-07-26 | 2013-12-05 | Semikron Elektronik Gmbh & Co. Kg | Herstellungsverfahren für ein Leistungshalbleiterbauelement mit Metallkontaktschicht |
DE102007037538A1 (de) * | 2007-08-09 | 2009-02-12 | Robert Bosch Gmbh | Baugruppe sowie Herstellung einer Baugruppe |
EP2144284A1 (de) * | 2008-07-11 | 2010-01-13 | Siemens Aktiengesellschaft | Verfahren zum Herstellen eines Anschlusskontaktes an einem Halbleiterbauelement für die Leistungselektronik und elektronisches Bauteil mit einem auf diese Weise an einem Halblei-terbauelement hergestellten Anschlusskontakt |
DE102008033410B4 (de) * | 2008-07-16 | 2011-06-30 | SEMIKRON Elektronik GmbH & Co. KG, 90431 | Leistungselektronische Verbindungseinrichtung mit einem Leistungshalbleiterbauelement und Herstellungsverfahren hierzu |
DE102008055137A1 (de) * | 2008-12-23 | 2010-07-01 | Robert Bosch Gmbh | Elektrisches oder elektronisches Verbundbauteil sowie Verfahren zum Herstellen eines elektrischen oder elektronischen Verbundbauteils |
DE102008055134A1 (de) * | 2008-12-23 | 2010-07-01 | Robert Bosch Gmbh | Elektrisches oder elektronisches Verbundbauteil sowie Verfahren zum Herstellen eines elektrischen oder elektronischen Verbundbauteils |
JP5664028B2 (ja) * | 2010-08-31 | 2015-02-04 | 富士通株式会社 | 電子装置の製造方法 |
DE102011115887A1 (de) * | 2011-10-15 | 2013-04-18 | Danfoss Silicon Power Gmbh | Leistungshalbleiterchip mit oberseitigen Potentialflächen |
DE102011115886B4 (de) * | 2011-10-15 | 2020-06-18 | Danfoss Silicon Power Gmbh | Verfahren zur Schaffung einer Verbindung eines Leistungshalbleiterchips mit oberseitigen Potentialflächen zu Dickdrähten |
DE102012202281A1 (de) * | 2012-02-15 | 2013-08-22 | Infineon Technologies Ag | Halbleiteranordnung für Druckkontaktierung |
DE102012212249B4 (de) * | 2012-07-12 | 2016-02-25 | Infineon Technologies Ag | Verfahren zur Herstellung eines Verbundes und eines Halbleitermoduls |
JP6028810B2 (ja) | 2012-11-20 | 2016-11-24 | トヨタ自動車株式会社 | 半導体装置 |
DE102014109766B3 (de) * | 2014-07-11 | 2015-04-02 | Heraeus Deutschland GmbH & Co. KG | Verfahren zum Herstellen eines Substratadapters, Substratadapter und Verfahren zum Kontaktieren eines Halbleiterelements |
DE102014117246B4 (de) * | 2014-11-25 | 2018-11-15 | Heraeus Deutschland GmbH & Co. KG | Verfahren zum Herstellen eines Substratadapters, Substratadapter und Verfahren zum Kontaktieren eines Halbleiterelements |
DE102014117245B4 (de) * | 2014-11-25 | 2018-03-22 | Heraeus Deutschland GmbH & Co. KG | Verfahren zum Herstellen eines Halbleiterelements mit Substratadapter und damit hergestelltes Halbleiterelement mit Substratadapter und Verfahren zum Kontaktieren dieses Halbleiterelements |
DE102015205704A1 (de) * | 2015-03-30 | 2016-10-06 | Robert Bosch Gmbh | Kontaktanordnung und Verfahren zu Herstellung der Kontaktanordnung |
DE102015113421B4 (de) | 2015-08-14 | 2019-02-21 | Danfoss Silicon Power Gmbh | Verfahren zum Herstellen von Halbleiterchips |
US10727186B2 (en) | 2016-08-05 | 2020-07-28 | Mitsubishi Electric Corporation | Power semiconductor device |
EP3523821B1 (en) | 2016-10-06 | 2022-03-09 | Agile POWER SWITCH 3D - INTEGRATION aPSI3D | A method of determining thermal impedance of a sintering layer and a corresponding measurement system |
DE102016121801B4 (de) | 2016-11-14 | 2022-03-17 | Infineon Technologies Ag | Baugruppe mit Verbindungen, die verschiedene Schmelztemperaturen aufweisen, Fahrzeug mit der Baugruppe und Verfahren zum Herstellen derselben und Verwendung der Baugruppe für eine Automobilanwendung |
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NL135880C (da) * | 1961-07-12 | 1900-01-01 | ||
DE3414065A1 (de) * | 1984-04-13 | 1985-12-12 | Siemens AG, 1000 Berlin und 8000 München | Anordnung bestehend aus mindestens einem auf einem substrat befestigten elektronischen bauelement und verfahren zur herstellung einer derartigen anordnung |
DE4040753A1 (de) * | 1990-12-19 | 1992-06-25 | Siemens Ag | Leistungshalbleiterbauelement |
EP0513410B1 (de) * | 1991-05-15 | 1993-12-15 | IXYS Semiconductor GmbH | Leistungshalbleitermodul und Verfahren zur Herstellung eines solchen Moduls |
US5499178A (en) | 1991-12-16 | 1996-03-12 | Regents Of The University Of Minnesota | System for reducing harmonics by harmonic current injection |
DE4300516C2 (de) * | 1993-01-12 | 2001-05-17 | Ixys Semiconductor Gmbh | Leistungshalbleitermodul |
DE19612838A1 (de) * | 1995-11-13 | 1997-05-15 | Asea Brown Boveri | Leistungshalbleiterbauelement sowie Verfahren zu dessen Herstellung |
DE19719703C5 (de) * | 1997-05-09 | 2005-11-17 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | Leistungshalbleitermodul mit Keramiksubstrat |
JP3220900B2 (ja) * | 1997-06-24 | 2001-10-22 | 三菱電機株式会社 | パワー半導体モジュール |
DE19739684B4 (de) * | 1997-09-10 | 2006-04-13 | Robert Bosch Gmbh | Verfahren zur Herstellung von Chipstapeln |
DE10062108B4 (de) * | 2000-12-13 | 2010-04-15 | Infineon Technologies Ag | Leistungsmodul mit verbessertem transienten Wärmewiderstand |
DE10222609B4 (de) * | 2002-04-15 | 2008-07-10 | Schott Ag | Verfahren zur Herstellung strukturierter Schichten auf Substraten und verfahrensgemäß beschichtetes Substrat |
DE10303103B4 (de) * | 2003-01-28 | 2009-07-09 | Ixys Semiconductor Gmbh | Halbleiterbauteil, insbesondere Leistungshalbleiterbauteil |
DE10360573B4 (de) * | 2003-12-22 | 2008-02-14 | Infineon Technologies Ag | Leistungshalbleitermodul |
DE102004019567B3 (de) * | 2004-04-22 | 2006-01-12 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Befestigung von elektronischen Bauelementen auf einem Substrat |
DE102004056702B3 (de) * | 2004-04-22 | 2006-03-02 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Befestigung von elektronischen Bauelementen auf einem Substrat |
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2005
- 2005-10-05 DE DE102005047566A patent/DE102005047566C5/de not_active Expired - Fee Related
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2006
- 2006-10-04 DK DK06020799.0T patent/DK1772900T3/da active
- 2006-10-04 EP EP06020799A patent/EP1772900B1/de not_active Not-in-force
- 2006-10-04 AT AT06020799T patent/ATE555498T1/de active
- 2006-10-04 JP JP2006272883A patent/JP5193452B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE102005047566C5 (de) | 2011-06-09 |
ATE555498T1 (de) | 2012-05-15 |
EP1772900A3 (de) | 2008-07-16 |
EP1772900B1 (de) | 2012-04-25 |
EP1772900A2 (de) | 2007-04-11 |
DE102005047566B4 (de) | 2009-05-14 |
DE102005047566A1 (de) | 2007-04-12 |
JP2007103949A (ja) | 2007-04-19 |
JP5193452B2 (ja) | 2013-05-08 |
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