DK1772902T3 - Effekthalvledermodul med isolerende mellemlag og fremgangsmåde til fremstilling deraf - Google Patents
Effekthalvledermodul med isolerende mellemlag og fremgangsmåde til fremstilling derafInfo
- Publication number
- DK1772902T3 DK1772902T3 DK06020798T DK06020798T DK1772902T3 DK 1772902 T3 DK1772902 T3 DK 1772902T3 DK 06020798 T DK06020798 T DK 06020798T DK 06020798 T DK06020798 T DK 06020798T DK 1772902 T3 DK1772902 T3 DK 1772902T3
- Authority
- DK
- Denmark
- Prior art keywords
- power semiconductor
- semiconductor module
- manufacture
- intermediate layer
- insulating intermediate
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5385—Assembly of a plurality of insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102005047567A DE102005047567B3 (de) | 2005-10-05 | 2005-10-05 | Leistungshalbleitermodul mit Isolationszwischenlage und Verfahren zu seiner Herstellung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DK1772902T3 true DK1772902T3 (da) | 2009-01-19 |
Family
ID=37625994
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK06020798T DK1772902T3 (da) | 2005-10-05 | 2006-10-04 | Effekthalvledermodul med isolerende mellemlag og fremgangsmåde til fremstilling deraf |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1772902B1 (da) |
| JP (1) | JP5291872B2 (da) |
| AT (1) | ATE408898T1 (da) |
| DE (2) | DE102005047567B3 (da) |
| DK (1) | DK1772902T3 (da) |
| ES (1) | ES2314804T3 (da) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007006706B4 (de) * | 2007-02-10 | 2011-05-26 | Semikron Elektronik Gmbh & Co. Kg | Schaltungsanordnung mit Verbindungseinrichtung sowie Herstellungsverfahren hierzu |
| DE102007022336A1 (de) * | 2007-05-12 | 2008-11-20 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitersubstrat mit Metallkontaktschicht sowie Herstellungsverfahren hierzu |
| DE102007057346B3 (de) * | 2007-11-28 | 2009-06-10 | Fachhochschule Kiel | Laminierte Leistungselektronikbaugruppe |
| DE102008017454B4 (de) | 2008-04-05 | 2010-02-04 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit hermetisch dichter Schaltungsanordnung und Herstellungsverfahren hierzu |
| DE102008033410B4 (de) * | 2008-07-16 | 2011-06-30 | SEMIKRON Elektronik GmbH & Co. KG, 90431 | Leistungselektronische Verbindungseinrichtung mit einem Leistungshalbleiterbauelement und Herstellungsverfahren hierzu |
| DE102008040488A1 (de) * | 2008-07-17 | 2010-01-21 | Robert Bosch Gmbh | Elektronische Baueinheit und Verfahren zu deren Herstellung |
| DE102009024371B4 (de) * | 2009-06-09 | 2013-09-19 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung einer Stromrichteranordnung mit Kühleinrichtung und Stromrichteranordnung |
| DE102009024385B4 (de) * | 2009-06-09 | 2011-03-17 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung eines Leistungshalbleitermoduls und Leistungshalbleitermodul mit einer Verbindungseinrichtung |
| JP5842489B2 (ja) * | 2011-09-14 | 2016-01-13 | 三菱電機株式会社 | 半導体装置 |
| DE102011083911A1 (de) * | 2011-09-30 | 2013-04-04 | Robert Bosch Gmbh | Elektronische Baugruppe mit hochtemperaturstabilem Substratgrundwerkstoff |
| DE102012222012B4 (de) | 2012-11-30 | 2017-04-06 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitereinrichtung und ein Verfahren zur Herstellung einer Leistungshalbleitereinrichtung |
| DE102013108185B4 (de) * | 2013-07-31 | 2021-09-23 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung einer leistungselektronischen Schalteinrichtung und leistungselektronische Schalteinrichtung |
| DE102014109779A1 (de) * | 2014-06-13 | 2015-12-17 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen einer Anordnung mit einem Bauteil |
| DE102015109856A1 (de) * | 2015-06-19 | 2016-12-22 | Danfoss Silicon Power Gmbh | Verfahren zum Herstellen einer für die Anbindung eines elektrischen Leiters geeigneten metallischen Kontaktfläche zur Kontaktierung eines Leistungshalbleiters, Leistungshalbleiter, Bond Buffer und Verfahren zur Herstellung eines Leistungshalbleiters |
| DE102019126623B4 (de) | 2019-10-02 | 2024-03-14 | Semikron Elektronik Gmbh & Co. Kg Patentabteilung | Leistungselektronische Schalteinrichtung mit einer Vergussmasse |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3414065A1 (de) * | 1984-04-13 | 1985-12-12 | Siemens AG, 1000 Berlin und 8000 München | Anordnung bestehend aus mindestens einem auf einem substrat befestigten elektronischen bauelement und verfahren zur herstellung einer derartigen anordnung |
| US4657322A (en) * | 1985-10-01 | 1987-04-14 | Tektronix, Inc. | Microwave interconnect |
| JPH08107266A (ja) * | 1994-10-04 | 1996-04-23 | Cmk Corp | プリント配線板 |
| DE19617055C1 (de) * | 1996-04-29 | 1997-06-26 | Semikron Elektronik Gmbh | Halbleiterleistungsmodul hoher Packungsdichte in Mehrschichtbauweise |
| DE10121970B4 (de) * | 2001-05-05 | 2004-05-27 | Semikron Elektronik Gmbh | Leistungshalbleitermodul in Druckkontaktierung |
| DE10342295B4 (de) * | 2003-09-12 | 2012-02-02 | Infineon Technologies Ag | Anordnung eines elektrischen Bauelements mit einer elektrischen Isolationsfolie auf einem Substrat und Verfahren zum Herstellen der Anordnung |
| EP1538667A3 (de) * | 2003-12-06 | 2007-04-18 | LuK Lamellen und Kupplungsbau Beteiligungs KG | Elektronisches Gerät mit elektrisch isoliertem metallischen Wärmeableitkörper |
| DE102004019567B3 (de) * | 2004-04-22 | 2006-01-12 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Befestigung von elektronischen Bauelementen auf einem Substrat |
-
2005
- 2005-10-05 DE DE102005047567A patent/DE102005047567B3/de not_active Expired - Fee Related
-
2006
- 2006-10-04 DE DE502006001588T patent/DE502006001588D1/de active Active
- 2006-10-04 DK DK06020798T patent/DK1772902T3/da active
- 2006-10-04 ES ES06020798T patent/ES2314804T3/es active Active
- 2006-10-04 JP JP2006272882A patent/JP5291872B2/ja not_active Expired - Fee Related
- 2006-10-04 EP EP06020798A patent/EP1772902B1/de not_active Not-in-force
- 2006-10-04 AT AT06020798T patent/ATE408898T1/de active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007103948A (ja) | 2007-04-19 |
| DE102005047567B3 (de) | 2007-03-29 |
| ATE408898T1 (de) | 2008-10-15 |
| DE502006001588D1 (de) | 2008-10-30 |
| JP5291872B2 (ja) | 2013-09-18 |
| ES2314804T3 (es) | 2009-03-16 |
| EP1772902A1 (de) | 2007-04-11 |
| EP1772902B1 (de) | 2008-09-17 |
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