DK1772902T3 - Power semiconductor module with insulating intermediate layer and method of manufacture thereof - Google Patents
Power semiconductor module with insulating intermediate layer and method of manufacture thereofInfo
- Publication number
- DK1772902T3 DK1772902T3 DK06020798T DK06020798T DK1772902T3 DK 1772902 T3 DK1772902 T3 DK 1772902T3 DK 06020798 T DK06020798 T DK 06020798T DK 06020798 T DK06020798 T DK 06020798T DK 1772902 T3 DK1772902 T3 DK 1772902T3
- Authority
- DK
- Denmark
- Prior art keywords
- power semiconductor
- semiconductor module
- manufacture
- intermediate layer
- insulating intermediate
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5385—Assembly of a plurality of insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Die Bonding (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Power semiconductor module comprises a housing, connecting elements and an electrically insulated substrate arranged within the housing and semiconductor components (70) with a connecting element and an insulating molded body (80). The substrate comprises an insulated body (54) and connecting pathways (52) facing the inside of the module. A connection between a semiconductor component and a connecting element or between the semiconductor component and the connecting pathway is a pressure sintered connection. An independent claim is also included for a method for the production of a power semiconductor module.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005047567A DE102005047567B3 (en) | 2005-10-05 | 2005-10-05 | Power semiconductor module comprises a housing, connecting elements and an electrically insulated substrate arranged within the housing and semiconductor components with a connecting element and an insulating molded body |
Publications (1)
Publication Number | Publication Date |
---|---|
DK1772902T3 true DK1772902T3 (en) | 2009-01-19 |
Family
ID=37625994
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK06020798T DK1772902T3 (en) | 2005-10-05 | 2006-10-04 | Power semiconductor module with insulating intermediate layer and method of manufacture thereof |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1772902B1 (en) |
JP (1) | JP5291872B2 (en) |
AT (1) | ATE408898T1 (en) |
DE (2) | DE102005047567B3 (en) |
DK (1) | DK1772902T3 (en) |
ES (1) | ES2314804T3 (en) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007006706B4 (en) * | 2007-02-10 | 2011-05-26 | Semikron Elektronik Gmbh & Co. Kg | Circuit arrangement with connecting device and manufacturing method thereof |
DE102007022336A1 (en) | 2007-05-12 | 2008-11-20 | Semikron Elektronik Gmbh & Co. Kg | Power semiconductor substrate with metal contact layer and manufacturing method thereof |
DE102007057346B3 (en) * | 2007-11-28 | 2009-06-10 | Fachhochschule Kiel | Laminated power electronics module |
DE102008017454B4 (en) * | 2008-04-05 | 2010-02-04 | Semikron Elektronik Gmbh & Co. Kg | Power semiconductor module with hermetically sealed circuit arrangement and manufacturing method for this purpose |
DE102008033410B4 (en) * | 2008-07-16 | 2011-06-30 | SEMIKRON Elektronik GmbH & Co. KG, 90431 | Power electronic connection device with a power semiconductor component and manufacturing method for this purpose |
DE102008040488A1 (en) * | 2008-07-17 | 2010-01-21 | Robert Bosch Gmbh | Electronic assembly and method of making the same |
DE102009024371B4 (en) * | 2009-06-09 | 2013-09-19 | Semikron Elektronik Gmbh & Co. Kg | Method for producing a converter arrangement with cooling device and converter arrangement |
DE102009024385B4 (en) * | 2009-06-09 | 2011-03-17 | Semikron Elektronik Gmbh & Co. Kg | Method for producing a power semiconductor module and power semiconductor module with a connection device |
JP5842489B2 (en) * | 2011-09-14 | 2016-01-13 | 三菱電機株式会社 | Semiconductor device |
DE102011083911A1 (en) * | 2011-09-30 | 2013-04-04 | Robert Bosch Gmbh | Electronic assembly with high-temperature-stable substrate base material |
DE102012222012B4 (en) | 2012-11-30 | 2017-04-06 | Semikron Elektronik Gmbh & Co. Kg | Power semiconductor device and a method for producing a power semiconductor device |
DE102013108185B4 (en) * | 2013-07-31 | 2021-09-23 | Semikron Elektronik Gmbh & Co. Kg | Method for producing a power electronic switching device and power electronic switching device |
DE102014109779A1 (en) * | 2014-06-13 | 2015-12-17 | Osram Opto Semiconductors Gmbh | Method for producing an assembly with a component |
DE102015109856A1 (en) * | 2015-06-19 | 2016-12-22 | Danfoss Silicon Power Gmbh | Method for producing a suitable for the connection of an electrical conductor metallic contact surface for contacting a power semiconductor, power semiconductor, bond buffer and method for producing a power semiconductor |
DE102019126623B4 (en) | 2019-10-02 | 2024-03-14 | Semikron Elektronik Gmbh & Co. Kg Patentabteilung | Power electronic switching device with a casting compound |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3414065A1 (en) * | 1984-04-13 | 1985-12-12 | Siemens AG, 1000 Berlin und 8000 München | Configuration comprising at least one electronic component fixed on a substrate, and process for fabricating a configuration of this type |
US4657322A (en) * | 1985-10-01 | 1987-04-14 | Tektronix, Inc. | Microwave interconnect |
JPH08107266A (en) * | 1994-10-04 | 1996-04-23 | Cmk Corp | Printed-wiring board |
DE19617055C1 (en) * | 1996-04-29 | 1997-06-26 | Semikron Elektronik Gmbh | High-density multilayer prepreg semiconductor power module |
DE10121970B4 (en) * | 2001-05-05 | 2004-05-27 | Semikron Elektronik Gmbh | Power semiconductor module in pressure contact |
DE10342295B4 (en) * | 2003-09-12 | 2012-02-02 | Infineon Technologies Ag | Arrangement of an electrical component with an electrical insulation film on a substrate and method for producing the arrangement |
DE102004054996B4 (en) * | 2003-12-06 | 2013-07-18 | Schaeffler Technologies AG & Co. KG | Electronic device |
DE102004019567B3 (en) * | 2004-04-22 | 2006-01-12 | Semikron Elektronik Gmbh & Co. Kg | Securing electronic components to substrate by subjecting the electronic component, supporting film and paste-like layer to pressure and connecting the substrate and the component by sintering |
-
2005
- 2005-10-05 DE DE102005047567A patent/DE102005047567B3/en not_active Expired - Fee Related
-
2006
- 2006-10-04 JP JP2006272882A patent/JP5291872B2/en not_active Expired - Fee Related
- 2006-10-04 EP EP06020798A patent/EP1772902B1/en not_active Not-in-force
- 2006-10-04 AT AT06020798T patent/ATE408898T1/en active
- 2006-10-04 DE DE502006001588T patent/DE502006001588D1/en active Active
- 2006-10-04 DK DK06020798T patent/DK1772902T3/en active
- 2006-10-04 ES ES06020798T patent/ES2314804T3/en active Active
Also Published As
Publication number | Publication date |
---|---|
ES2314804T3 (en) | 2009-03-16 |
EP1772902A1 (en) | 2007-04-11 |
ATE408898T1 (en) | 2008-10-15 |
JP5291872B2 (en) | 2013-09-18 |
DE102005047567B3 (en) | 2007-03-29 |
EP1772902B1 (en) | 2008-09-17 |
DE502006001588D1 (en) | 2008-10-30 |
JP2007103948A (en) | 2007-04-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DK1772902T3 (en) | Power semiconductor module with insulating intermediate layer and method of manufacture thereof | |
DK1772900T3 (en) | Manufacturing method for a device with power semiconductor components comprising a pressure sintering step | |
HK1089328A1 (en) | Method for manufacturing an electronic module and an electronic module | |
TW200723457A (en) | Semiconductor device and method for manufacturing semiconductor device | |
DK1956647T3 (en) | Circuit arrangement with connecting device and method for making it | |
EP1450404A3 (en) | Assembly in pressure contact with a power semiconductor module | |
TW200721421A (en) | Semiconductor structure and method of assembly | |
ATE438924T1 (en) | POWER SEMICONDUCTOR MODULE | |
ATE417362T1 (en) | POWER SEMICONDUCTOR MODULE WITH CONNECTION ELEMENTS ELECTRICALLY INSULATED FROM EACH OTHER | |
WO2008070836A8 (en) | Connector assembly with internal seals and manufacturing method | |
DK1548829T3 (en) | Power semiconductor module and method of manufacture thereof | |
DE502007005586D1 (en) | Power resistor module | |
FI20041525A0 (en) | Electronics module and method for its manufacture | |
EP1592063A3 (en) | Assembly in pressure contact with a power semiconductor module | |
GB2429848A (en) | Electronics module and method for manufacturing the same | |
TW200742249A (en) | Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit substrate, and electronic apparatus | |
WO2007111610A8 (en) | Hybrid chip fuse assembly having wire leads and fabrication method therefor | |
TW200608611A (en) | Thermoelectric device and method of manufacturing the same | |
TW200704582A (en) | Semiconductor composite device and method of manufacturing the same | |
DK1933380T3 (en) | Power semiconductor module with contact springs | |
WO2008003287A3 (en) | Electric component comprising a sensor element, method for encapsulating a sensor element and method for producing a board assembly | |
ES2192409T3 (en) | BIOMETRIC SENSOR AND PROCEDURE FOR MANUFACTURING. | |
WO2009043670A3 (en) | Electronic circuit composed of sub-circuits and method for producing the same | |
ATE548755T1 (en) | POWER SEMICONDUCTOR MODULE IN PRESSURE CONTACT DESIGN | |
TW200731490A (en) | Chip assembly and method of manufacturing thereof |