JP5842489B2 - Semiconductor device - Google Patents

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JP5842489B2
JP5842489B2 JP2011200486A JP2011200486A JP5842489B2 JP 5842489 B2 JP5842489 B2 JP 5842489B2 JP 2011200486 A JP2011200486 A JP 2011200486A JP 2011200486 A JP2011200486 A JP 2011200486A JP 5842489 B2 JP5842489 B2 JP 5842489B2
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electrode
semiconductor
semiconductor module
conductive plate
surface electrode
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JP2013062405A (en
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忠嗣 山本
忠嗣 山本
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Mitsubishi Electric Corp
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    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
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    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)

Description

本発明は、半導体モジュールと制御回路基板をケースで覆った半導体装置に関し、特に部品点数及び組立工数を削減し、製造コストを低減することができる半導体装置に関する。   The present invention relates to a semiconductor device in which a semiconductor module and a control circuit board are covered with a case, and more particularly, to a semiconductor device capable of reducing the number of components and the number of assembly steps and reducing the manufacturing cost.

インバータなどの半導体モジュールの制御電極と制御回路基板をフレキシブルフラットケーブルで接続した半導体装置が提案されている（例えば、特許文献１参照）。   There has been proposed a semiconductor device in which a control electrode of a semiconductor module such as an inverter and a control circuit board are connected by a flexible flat cable (see, for example, Patent Document 1).

特開２００４−２９７９７２号公報の図２FIG. 2 of Japanese Patent Application Laid-Open No. 2004-297972

従来、半導体モジュールのＮ側主電極及びＰ側主電極は金属板であったため、これらの主電極をケース側の電極にネジ止め又は溶接する必要があった。従って、溶接装置、溶接工程、及びその品質管理が必要であった。   Conventionally, since the N-side main electrode and the P-side main electrode of the semiconductor module are metal plates, it is necessary to screw or weld these main electrodes to the case-side electrode. Accordingly, a welding apparatus, a welding process, and quality control thereof are necessary.

本発明は、上述のような課題を解決するためになされたもので、その目的は部品点数及び組立工数を削減し、製造コストを低減することができる半導体装置を得るものである。   The present invention has been made to solve the above-described problems, and an object of the present invention is to obtain a semiconductor device capable of reducing the number of parts and the number of assembling steps and reducing the manufacturing cost.

本発明に係る半導体装置は、半導体モジュールと、制御回路基板と、前記半導体モジュール及び前記制御回路基板を覆うケースとを備え、前記半導体モジュールは、導電板と、制御電極、上面電極、及び下面電極を有し、前記導電板上に設けられ、前記導電板に前記下面電極が接続された第１の半導体素子と、上面電極、及び下面電極を有し、前記導電板上に設けられ、前記導電板に前記下面電極が接続された第２の半導体素子と、前記第１及び第２の半導体素子を覆う樹脂と、一端が前記第１の半導体素子の前記制御電極に接続され、他端が前記樹脂から導出されて前記制御回路基板に接続された制御端子と、一端が前記第１及び第２の半導体素子の前記上面電極に接続され、他端が前記樹脂から導出された第１の主電極と、一端が前記導電板に接続され、他端が前記樹脂から導出された第２の主電極とを有し、前記第１及び第２の主電極はフレキシブルフラットケーブル又はフレキシブルプリント回路であり、前記第１及び第２の主電極は前記ケースの外側に導出され、前記第１及び第２の半導体素子は前記第１の主電極により並列接続されている。
A semiconductor device according to the present invention includes a semiconductor module, a control circuit board, and a case that covers the semiconductor module and the control circuit board. The semiconductor module includes a conductive plate, a control electrode, an upper surface electrode, and a lower surface electrode. A first semiconductor element provided on the conductive plate and having the lower surface electrode connected to the conductive plate, an upper surface electrode, and a lower surface electrode; provided on the conductive plate; A second semiconductor element having the lower surface electrode connected to a plate; a resin covering the first and second semiconductor elements; one end connected to the control electrode of the first semiconductor element; and the other end A control terminal derived from resin and connected to the control circuit board, a first main electrode having one end connected to the upper surface electrode of the first and second semiconductor elements and the other end derived from the resin And one end of the guide A second main electrode connected to a plate and having the other end derived from the resin, wherein the first and second main electrodes are flexible flat cables or flexible printed circuits, and the first and second The main electrode is led out to the outside of the case, and the first and second semiconductor elements are connected in parallel by the first main electrode .

本発明により、部品点数及び組立工数を削減し、製造コストを低減することができる。   According to the present invention, the number of parts and the number of assembly steps can be reduced, and the manufacturing cost can be reduced.

本発明の実施の形態１に係る半導体装置を示す断面図である。It is sectional drawing which shows the semiconductor device which concerns on Embodiment 1 of this invention. 本発明の実施の形態１に係る半導体モジュールを示す断面図である。It is sectional drawing which shows the semiconductor module which concerns on Embodiment 1 of this invention. 本発明の実施の形態１に係る半導体モジュールの回路図である。1 is a circuit diagram of a semiconductor module according to Embodiment 1 of the present invention. 比較例に係る半導体装置を示す断面図である。It is sectional drawing which shows the semiconductor device which concerns on a comparative example. 比較例に係る半導体モジュールを示す断面図である。It is sectional drawing which shows the semiconductor module which concerns on a comparative example. 本発明の実施の形態２に係る半導体モジュールを示す断面図である。It is sectional drawing which shows the semiconductor module which concerns on Embodiment 2 of this invention.

本発明の実施の形態に係る半導体装置について図面を参照して説明する。同じ又は対応する構成要素には同じ符号を付し、説明の繰り返しを省略する場合がある。   A semiconductor device according to an embodiment of the present invention will be described with reference to the drawings. The same or corresponding components are denoted by the same reference numerals, and repeated description may be omitted.

実施の形態１．
図１は、本発明の実施の形態１に係る半導体装置を示す断面図である。銅等からなるベース板１上に、接触面積を増して熱伝導率を向上するためのシリコングリス２を介して半導体モジュール３が設けられている。押さえ板４が半導体モジュール３を上側からベース板１に押さえつけて固定している。 Embodiment 1 FIG.
FIG. 1 is a cross-sectional view showing a semiconductor device according to the first embodiment of the present invention. A semiconductor module 3 is provided on a base plate 1 made of copper or the like via silicon grease 2 for increasing the contact area and improving the thermal conductivity. A pressing plate 4 presses and fixes the semiconductor module 3 to the base plate 1 from above.

押さえ板４の上方に、駆動回路や保護回路等を実装したプリント配線板５（Printed Circuit Board）が設けられ、半導体モジュール３とプリント配線板５との間にアルミ等からなる導電性のシールド板６が設けられている。このシールド板６は、急峻な電圧及び電流変化により生ずる電磁誘導ノイズからプリント配線板５をシールドする。   A printed wiring board 5 (printed circuit board) on which a drive circuit, a protection circuit, and the like are mounted is provided above the holding plate 4, and a conductive shield plate made of aluminum or the like between the semiconductor module 3 and the printed wiring board 5. 6 is provided. The shield plate 6 shields the printed wiring board 5 from electromagnetic induction noise caused by steep voltage and current changes.

ベース板１上に設けられたケース７が、半導体モジュール３、押さえ板４、プリント配線板５、及びシールド板６を覆っている。押さえ板４、プリント配線板５、及びシールド板６は、それぞれケース７にネジ止めされている。   A case 7 provided on the base plate 1 covers the semiconductor module 3, the pressing plate 4, the printed wiring board 5, and the shield plate 6. The holding plate 4, the printed wiring board 5, and the shield plate 6 are each screwed to the case 7.

図２は、本発明の実施の形態１に係る半導体モジュールを示す断面図である。図３は、実施の形態１に係る半導体モジュールの回路図である。ＩＧＢＴ等のスイッチング素子８と還流ダイオード９が銅等の導電材からなるベース配線板１０の上面に並べて設けられ、スイッチング素子８のコレクタ電極１１と還流ダイオード９のカソード電極１２がベース配線板１０にはんだ等により接合されている。スイッチング素子８のエミッタ電極１３と還流ダイオード９のアノード電極１４にＮ側主電極１５の一端がはんだバンプや異方性導電ペースト等により接合されている。従って、スイッチング素子８と還流ダイオード９は並列に接続されている。   FIG. 2 is a cross-sectional view showing the semiconductor module according to Embodiment 1 of the present invention. FIG. 3 is a circuit diagram of the semiconductor module according to the first embodiment. A switching element 8 such as an IGBT and a reflux diode 9 are provided side by side on the upper surface of a base wiring board 10 made of a conductive material such as copper, and a collector electrode 11 of the switching element 8 and a cathode electrode 12 of the reflux diode 9 are provided on the base wiring board 10. Joined by solder or the like. One end of the N-side main electrode 15 is joined to the emitter electrode 13 of the switching element 8 and the anode electrode 14 of the reflux diode 9 by solder bumps, anisotropic conductive paste, or the like. Therefore, the switching element 8 and the free wheeling diode 9 are connected in parallel.

Ｐ側主電極１６の一端がベース配線板１０に接続されている。制御端子１７の一端がスイッチング素子８のゲート電極１８にはんだバンプや異方性導電ペースト等により接合されている。   One end of the P-side main electrode 16 is connected to the base wiring board 10. One end of the control terminal 17 is joined to the gate electrode 18 of the switching element 8 by a solder bump, anisotropic conductive paste, or the like.

ベース配線板１０の下面にセラミックや樹脂等の絶縁シート１９を設けて、半導体モジュール３内のパワー半導体とケース７側のベース板１を絶縁している。絶縁シート１９を保護するために裏面銅箔２０が設けられている。   An insulating sheet 19 made of ceramic or resin is provided on the lower surface of the base wiring board 10 to insulate the power semiconductor in the semiconductor module 3 from the base plate 1 on the case 7 side. A backside copper foil 20 is provided to protect the insulating sheet 19.

半導体モジュール３は、スイッチング素子８や還流ダイオード９等をモールド樹脂２１で覆ったＴＰＭ（Transfer mold Power Module）である。制御端子１７の他端は、モールド樹脂２１から導出されてプリント配線板５に圧接又はコネクタ接合されている。Ｎ側主電極１５の他端及びＰ側主電極１６の他端は、モールド樹脂２１から導出され、更にケース７の外側に導出されている。   The semiconductor module 3 is a TPM (Transfer mold Power Module) in which the switching element 8, the reflux diode 9, and the like are covered with a mold resin 21. The other end of the control terminal 17 is led out from the mold resin 21 and is press-contacted or connector-connected to the printed wiring board 5. The other end of the N-side main electrode 15 and the other end of the P-side main electrode 16 are led out from the mold resin 21 and further led out of the case 7.

スイッチング素子８及び還流ダイオード９から発生した熱は、ベース配線板１０及び裏面銅箔２０を介して半導体モジュール３外部に放出される。その放出された熱はシリコングリス２及びベース板１を介して装置外部の冷却装置等へ放出される。   Heat generated from the switching element 8 and the free-wheeling diode 9 is released to the outside of the semiconductor module 3 through the base wiring board 10 and the back copper foil 20. The released heat is released to a cooling device or the like outside the apparatus through the silicon grease 2 and the base plate 1.

本実施の形態の特徴として、Ｎ側主電極１５、Ｐ側主電極１６及び制御端子１７はフレキシブルフラットケーブル（FFC: Flexible Flat Cable）又はフレキシブルプリント回路（FPC: Flexible printed circuits）である。   As a feature of the present embodiment, the N-side main electrode 15, the P-side main electrode 16, and the control terminal 17 are flexible flat cables (FFC) or flexible printed circuits (FPC).

続いて、本実施の形態の効果を比較例と比較して説明する。図４は、比較例に係る半導体装置を示す断面図である。図５は、比較例に係る半導体モジュールを示す断面図である。比較例では、Ｎ側主電極２２及びＰ側主電極２３は銅等の金属板（リードフレーム）からなり、それぞれケース７側のケース側電極２４，２５にネジ止め又は溶接される。従って、溶接装置、溶接工程、及びその品質管理などが必要である。   Subsequently, the effect of the present embodiment will be described in comparison with a comparative example. FIG. 4 is a cross-sectional view showing a semiconductor device according to a comparative example. FIG. 5 is a cross-sectional view showing a semiconductor module according to a comparative example. In the comparative example, the N-side main electrode 22 and the P-side main electrode 23 are made of a metal plate (lead frame) such as copper, and are screwed or welded to the case-side electrodes 24 and 25 on the case 7 side, respectively. Therefore, a welding apparatus, a welding process, and quality control thereof are necessary.

一方、本実施の形態では、半導体モジュール３のＮ側主電極１５及びＰ側主電極１６はフレキシブルフラットケーブル又はフレキシブルプリント回路である。従って、ネジ止めや溶接を圧接やコネクタ接合等に変更できる。また、Ｎ側主電極１５及びＰ側主電極１６は柔軟性を有するため、折り曲げてケース７の穴から外側に導出させることができる。従って、比較例のケース７側のケース側電極２４，２５が不要となる。この結果、部品点数及び組立工数を削減し、製造コストを低減することができる。   On the other hand, in the present embodiment, the N-side main electrode 15 and the P-side main electrode 16 of the semiconductor module 3 are flexible flat cables or flexible printed circuits. Therefore, screwing or welding can be changed to pressure welding or connector joining. Further, since the N-side main electrode 15 and the P-side main electrode 16 have flexibility, they can be bent and led out from the hole of the case 7. Therefore, the case side electrodes 24 and 25 on the case 7 side of the comparative example are not necessary. As a result, the number of parts and the number of assembly steps can be reduced, and the manufacturing cost can be reduced.

また、比較例では、制御端子２６は銅等の金属板（リードフレーム）からなり、一端が半導体モジュール３のゲート電極１８にワイヤ２７により接続され、他端がプリント配線板５のスルーホールを貫通して噴流はんだ付けにより接合されている。従って、噴流はんだ付け装置が必要であり、噴流はんだ付け工程とその品質管理が必要である。また、装置が多機能化して１台あたりに実装される半導体モジュール３の数が増すと、プリント配線板５の多くのスルーホールに全ての制御端子２６を貫通させるために高い加工精度や組立位置精度が必要となる。また、機械的振動や周囲温度の変化による熱膨張収縮の繰り返しによってプリント配線板５のスルーホールと制御端子２６との接合部にクラックが生じ、スルーホール内部の銅薄膜が剥離して信頼性が低下する。   In the comparative example, the control terminal 26 is made of a metal plate (lead frame) such as copper, one end is connected to the gate electrode 18 of the semiconductor module 3 by a wire 27, and the other end penetrates the through hole of the printed wiring board 5. And are joined by jet soldering. Therefore, a jet soldering apparatus is required, and a jet soldering process and its quality control are required. Further, as the number of semiconductor modules 3 mounted per unit increases as the apparatus becomes multifunctional, high processing accuracy and assembly position are required to allow all control terminals 26 to pass through many through holes in the printed wiring board 5. Accuracy is required. In addition, repeated thermal expansion and contraction due to mechanical vibrations and changes in ambient temperature causes cracks in the joints between the through holes of the printed wiring board 5 and the control terminals 26, and the copper thin film inside the through holes peels off, resulting in reliability. descend.

一方、本実施の形態では、制御端子１７はフレキシブルフラットケーブル又はフレキシブルプリント回路であるため、圧接又はコネクタ接合によりプリント配線板５に接合させることができる。従って、噴流はんだ付け工程やその品質管理を省略できる。また、高い加工精度や組立位置精度が不要であり、機械的振動や熱膨張収縮の繰り返しに対する信頼性が高い。   On the other hand, in this embodiment, since the control terminal 17 is a flexible flat cable or a flexible printed circuit, it can be joined to the printed wiring board 5 by pressure welding or connector joining. Therefore, the jet soldering process and its quality control can be omitted. Further, high processing accuracy and assembly position accuracy are not required, and reliability with respect to repeated mechanical vibration and thermal expansion and contraction is high.

実施の形態２．
図６は、本発明の実施の形態２に係る半導体モジュールを示す断面図である。銅等の金属板（リードフレーム）からなる中継端子２８，２９，３０がモールド樹脂２１内に設けられている。 Embodiment 2. FIG.
FIG. 6 is a cross-sectional view showing a semiconductor module according to Embodiment 2 of the present invention. Relay terminals 28, 29, and 30 made of a metal plate (lead frame) such as copper are provided in the mold resin 21.

中継端子２８は、還流ダイオード９のアノード電極１４にアルミワイヤ３１により接続され、かつＮ側主電極１５の一端に接続されている。中継端子２９は、ベース配線板１０にアルミワイヤ３２により接続され、かつＰ側主電極１６の一端に接続されている。中継端子３０は、スイッチング素子８のゲート電極１８にアルミワイヤ３３によりワイヤ接続され、かつ制御端子１７の一端に接続されている。スイッチング素子８のエミッタ電極１３と還流ダイオード９のアノード電極１４がアルミワイヤ３４により接続されている。   The relay terminal 28 is connected to the anode electrode 14 of the reflux diode 9 by an aluminum wire 31 and is connected to one end of the N-side main electrode 15. The relay terminal 29 is connected to the base wiring board 10 by an aluminum wire 32 and is connected to one end of the P-side main electrode 16. The relay terminal 30 is wire-connected to the gate electrode 18 of the switching element 8 by an aluminum wire 33 and is connected to one end of the control terminal 17. The emitter electrode 13 of the switching element 8 and the anode electrode 14 of the reflux diode 9 are connected by an aluminum wire 34.

本実施の形態では、上記のように中継端子２８，２９，３０をモールド樹脂２１内に設けて半導体素子と外部端子を中継させる。これにより、高温・高湿環境において、フレキシブルフラットケーブル又はフレキシブルプリント回路からなる外部端子とモールド樹脂２１との界面からの水分進入による絶縁低下を防いで信頼性を高めることができる。   In the present embodiment, the relay terminals 28, 29, and 30 are provided in the mold resin 21 as described above to relay the semiconductor element and the external terminals. As a result, in a high temperature / high humidity environment, it is possible to prevent a decrease in insulation due to moisture ingress from the interface between the external terminal made of a flexible flat cable or a flexible printed circuit and the mold resin 21 and to improve reliability.

３ 半導体モジュール
５ プリント配線板（制御回路基板）
７ ケース
８ スイッチング素子（半導体素子）
９ 還流ダイオード（半導体素子）
１０ ベース配線板（導電板）
１１ コレクタ電極（下面電極）
１２ カソード電極（下面電極）
１３ エミッタ電極（上面電極）
１４ アノード電極（上面電極）
１５ Ｎ側主電極（第１の主電極）
１６ Ｐ側主電極（第２の主電極）
１７ 制御端子
１８ ゲート電極（制御電極）
２１ モールド樹脂（樹脂）
２８ 中継端子（第１の中継端子）
２９ 中継端子（第２の中継端子）
３０ 中継端子（第３の中継端子） 3 Semiconductor module 5 Printed wiring board (control circuit board)
7 Case 8 Switching element (semiconductor element)
9 Reflux diode (semiconductor element)
10 Base wiring board (conductive plate)
11 Collector electrode (bottom electrode)
12 Cathode electrode (bottom electrode)
13 Emitter electrode (top electrode)
14 Anode electrode (top electrode)
15 N-side main electrode (first main electrode)
16 P-side main electrode (second main electrode)
17 Control terminal 18 Gate electrode (control electrode)
21 Mold resin (resin)
28 Relay terminal (first relay terminal)
29 Relay terminal (second relay terminal)
30 Relay terminal (third relay terminal)

Claims (1)

半導体モジュールと、
制御回路基板と、
前記半導体モジュール及び前記制御回路基板を覆うケースとを備え、
前記半導体モジュールは、
導電板と、
制御電極、上面電極、及び下面電極を有し、前記導電板上に設けられ、前記導電板に前記下面電極が接続された第１の半導体素子と、
上面電極、及び下面電極を有し、前記導電板上に設けられ、前記導電板に前記下面電極が接続された第２の半導体素子と、
前記第１及び第２の半導体素子を覆う樹脂と、
一端が前記第１の半導体素子の前記制御電極に接続され、他端が前記樹脂から導出されて前記制御回路基板に接続された制御端子と、
一端が前記第１及び第２の半導体素子の前記上面電極に接続され、他端が前記樹脂から導出された第１の主電極と、
一端が前記導電板に接続され、他端が前記樹脂から導出された第２の主電極とを有し、
前記第１及び第２の主電極はフレキシブルフラットケーブル又はフレキシブルプリント回路であり、
前記第１及び第２の主電極は前記ケースの外側に導出され、
前記第１及び第２の半導体素子は前記第１の主電極により並列接続されていることを特徴とする半導体装置。 A semiconductor module;
A control circuit board;
A case covering the semiconductor module and the control circuit board;
The semiconductor module is
A conductive plate;
A first semiconductor element having a control electrode, an upper surface electrode, and a lower surface electrode, provided on the conductive plate, wherein the lower surface electrode is connected to the conductive plate;
A second semiconductor element having an upper surface electrode and a lower surface electrode, provided on the conductive plate, wherein the lower surface electrode is connected to the conductive plate;
A resin covering the first and second semiconductor elements;
A control terminal having one end connected to the control electrode of the first semiconductor element and the other end derived from the resin and connected to the control circuit board;
A first main electrode having one end connected to the upper surface electrode of the first and second semiconductor elements and the other end derived from the resin;
One end is connected to the conductive plate, and the other end has a second main electrode derived from the resin,
The first and second main electrodes are flexible flat cables or flexible printed circuits;
The first and second main electrodes are led out of the case ;
The semiconductor device according to claim 1, wherein the first and second semiconductor elements are connected in parallel by the first main electrode .
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