DK1956647T3 - Strömkredsarrangement med forbindelsesindretning og fremgangsmåde til fremstilling deraf - Google Patents

Strömkredsarrangement med forbindelsesindretning og fremgangsmåde til fremstilling deraf

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Publication number
DK1956647T3
DK1956647T3 DK08000989T DK08000989T DK1956647T3 DK 1956647 T3 DK1956647 T3 DK 1956647T3 DK 08000989 T DK08000989 T DK 08000989T DK 08000989 T DK08000989 T DK 08000989T DK 1956647 T3 DK1956647 T3 DK 1956647T3
Authority
DK
Denmark
Prior art keywords
component
circuit arrangement
connection device
making
connecting device
Prior art date
Application number
DK08000989T
Other languages
English (en)
Inventor
Peter Beckedahl
Heiko Braml
Christian Goebl
Heinrich Dr Heilbronner
Original Assignee
Semikron Elektronik Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron Elektronik Gmbh filed Critical Semikron Elektronik Gmbh
Application granted granted Critical
Publication of DK1956647T3 publication Critical patent/DK1956647T3/da

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/296—Organo-silicon compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/38—Structure, shape, material or disposition of the strap connectors prior to the connecting process of a plurality of strap connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/41—Structure, shape, material or disposition of the strap connectors after the connecting process of a plurality of strap connectors
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    • H01L24/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
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    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/37147—Copper [Cu] as principal constituent
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    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
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    • H01L2224/3754—Coating
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    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
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    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/832—Applying energy for connecting
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Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
  • Use Of Switch Circuits For Exchanges And Methods Of Control Of Multiplex Exchanges (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
DK08000989T 2007-02-10 2008-01-19 Strömkredsarrangement med forbindelsesindretning og fremgangsmåde til fremstilling deraf DK1956647T3 (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102007006706A DE102007006706B4 (de) 2007-02-10 2007-02-10 Schaltungsanordnung mit Verbindungseinrichtung sowie Herstellungsverfahren hierzu

Publications (1)

Publication Number Publication Date
DK1956647T3 true DK1956647T3 (da) 2009-11-09

Family

ID=39322584

Family Applications (1)

Application Number Title Priority Date Filing Date
DK08000989T DK1956647T3 (da) 2007-02-10 2008-01-19 Strömkredsarrangement med forbindelsesindretning og fremgangsmåde til fremstilling deraf

Country Status (7)

Country Link
EP (1) EP1956647B1 (da)
AT (1) ATE439683T1 (da)
DE (2) DE102007006706B4 (da)
DK (1) DK1956647T3 (da)
ES (1) ES2328188T3 (da)
PL (1) PL1956647T3 (da)
PT (1) PT1956647E (da)

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DE102008017454B4 (de) 2008-04-05 2010-02-04 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit hermetisch dichter Schaltungsanordnung und Herstellungsverfahren hierzu
DE102008033410B4 (de) * 2008-07-16 2011-06-30 SEMIKRON Elektronik GmbH & Co. KG, 90431 Leistungselektronische Verbindungseinrichtung mit einem Leistungshalbleiterbauelement und Herstellungsverfahren hierzu
US8293586B2 (en) * 2008-09-25 2012-10-23 Infineon Technologies Ag Method of manufacturing an electronic system
DE102009000888B4 (de) 2009-02-16 2011-03-24 Semikron Elektronik Gmbh & Co. Kg Halbleiteranordnung
DE102009017733B4 (de) * 2009-04-11 2011-12-08 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit einer Verbindungseinrichtung und mit als Kontaktfeder ausgebildeten internen Anschlusselementen
EP2242094A1 (en) * 2009-04-17 2010-10-20 Nxp B.V. Foil and method for foil-based bonding and resulting package
DE102009020733B4 (de) * 2009-05-11 2011-12-08 Danfoss Silicon Power Gmbh Verfahren zur Kontaktsinterung von bandförmigen Kontaktelementen
DE102009022660B3 (de) * 2009-05-26 2010-09-16 Semikron Elektronik Gmbh & Co. Kg Befestigung eines Bauelements an einem Substrat und/oder eines Anschlusselementes an dem Bauelement und/oder an dem Substrat durch Drucksinterung
DE102009024370B4 (de) * 2009-06-09 2014-04-30 Semikron Elektronik Gmbh & Co. Kg Stromrichteranordnung mit Kühleinrichtung und Herstellungsverfahren hierzu
EP2270855A1 (en) * 2009-06-29 2011-01-05 ABB Research Ltd. An electrical module
DE102010011719A1 (de) 2010-03-17 2011-09-22 Semikron Elektronik Gmbh & Co. Kg Verfahren zur Herstellung einer elektrisch leitenden Verbindung eines Kontaktes mit einem Gegenkontakt
DE102010039824B4 (de) 2010-08-26 2018-03-29 Semikron Elektronik Gmbh & Co. Kg Leistungsbaugruppe mit einer flexiblen Verbindungseinrichtung
DE102010062547B4 (de) 2010-12-07 2021-10-28 Semikron Elektronik Gmbh & Co. Kg Verfahren zur Herstellung einer Schaltungsanordnung
DE102011078811B3 (de) * 2011-07-07 2012-05-24 Semikron Elektronik Gmbh & Co. Kg Leistungselektronisches System mit einer Kühleinrichtung
DE102011078806B4 (de) * 2011-07-07 2014-10-30 Semikron Elektronik Gmbh & Co. Kg Herstellungsverfahren für ein leistungselektronisches System mit einer Kühleinrichtung
DE102012222012B4 (de) 2012-11-30 2017-04-06 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitereinrichtung und ein Verfahren zur Herstellung einer Leistungshalbleitereinrichtung
DE102012222791A1 (de) * 2012-12-11 2014-06-12 Robert Bosch Gmbh Verfahren zur Kontaktierung eines Halbleiters und Halbleiterbauelement mit erhöhter Stabilität gegenüber thermomechanischen Einflüssen
DE102013102828B4 (de) 2013-03-20 2018-04-12 Semikron Elektronik Gmbh & Co. Kg Leistungsbaugruppe mit einer als Folienverbund ausgebildeten Verbindungseinrichtung
DE102013104949B3 (de) 2013-05-14 2014-04-24 Semikron Elektronik Gmbh & Co. Kg Leistungselektronische Schalteinrichtung und Anordnung hiermit
DE102013108185B4 (de) 2013-07-31 2021-09-23 Semikron Elektronik Gmbh & Co. Kg Verfahren zur Herstellung einer leistungselektronischen Schalteinrichtung und leistungselektronische Schalteinrichtung
DE102013215592A1 (de) * 2013-08-07 2015-02-12 Siemens Aktiengesellschaft Leistungselektronische Schaltung mit planarer elektrischer Kontaktierung
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DE502008000072D1 (de) 2009-09-24
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PL1956647T3 (pl) 2009-12-31
ATE439683T1 (de) 2009-08-15

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