JPH0332912B2 - - Google Patents

Info

Publication number
JPH0332912B2
JPH0332912B2 JP59211960A JP21196084A JPH0332912B2 JP H0332912 B2 JPH0332912 B2 JP H0332912B2 JP 59211960 A JP59211960 A JP 59211960A JP 21196084 A JP21196084 A JP 21196084A JP H0332912 B2 JPH0332912 B2 JP H0332912B2
Authority
JP
Japan
Prior art keywords
semiconductor device
copper
lead
bonding wire
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59211960A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6189643A (ja
Inventor
Hiroyuki Baba
Takashi Matsuzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP59211960A priority Critical patent/JPS6189643A/ja
Priority to KR1019850006793A priority patent/KR900000439B1/ko
Priority to CN85107077A priority patent/CN85107077B/zh
Priority to DE8585307236T priority patent/DE3581039D1/de
Priority to EP85307236A priority patent/EP0178170B1/en
Publication of JPS6189643A publication Critical patent/JPS6189643A/ja
Priority to US07/150,499 priority patent/US4891333A/en
Publication of JPH0332912B2 publication Critical patent/JPH0332912B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/22—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded
    • B23K20/233—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer
    • B23K20/2333—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer one layer being aluminium, magnesium or beryllium
    • H10W72/071—
    • H10W70/041—
    • H10W70/40—
    • H10W72/015—
    • H10W72/01551—
    • H10W72/07141—
    • H10W72/075—
    • H10W72/07533—
    • H10W72/07535—
    • H10W72/07541—
    • H10W72/5363—
    • H10W72/5524—
    • H10W72/5525—
    • H10W72/59—
    • H10W72/884—
    • H10W72/952—
    • H10W74/00—
    • H10W90/736—
    • H10W90/756—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S228/00—Metal fusion bonding
    • Y10S228/904—Wire bonding
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49121—Beam lead frame or beam lead device

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)
JP59211960A 1984-10-09 1984-10-09 半導体装置及びその製造方法 Granted JPS6189643A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP59211960A JPS6189643A (ja) 1984-10-09 1984-10-09 半導体装置及びその製造方法
KR1019850006793A KR900000439B1 (ko) 1984-10-09 1985-09-17 접합선의 접속을 개량한 반도체 장치와 그 제조방법
CN85107077A CN85107077B (zh) 1984-10-09 1985-09-24 半导体器件及其制造法
DE8585307236T DE3581039D1 (de) 1984-10-09 1985-10-09 Halbleitervorrichtung mit einem verbindungsdraht und verfahren zu ihrer herstellung.
EP85307236A EP0178170B1 (en) 1984-10-09 1985-10-09 Semiconductor device having a bonding wire and method for manufacturing it
US07/150,499 US4891333A (en) 1984-10-09 1988-02-01 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59211960A JPS6189643A (ja) 1984-10-09 1984-10-09 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPS6189643A JPS6189643A (ja) 1986-05-07
JPH0332912B2 true JPH0332912B2 (enExample) 1991-05-15

Family

ID=16614547

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59211960A Granted JPS6189643A (ja) 1984-10-09 1984-10-09 半導体装置及びその製造方法

Country Status (6)

Country Link
US (1) US4891333A (enExample)
EP (1) EP0178170B1 (enExample)
JP (1) JPS6189643A (enExample)
KR (1) KR900000439B1 (enExample)
CN (1) CN85107077B (enExample)
DE (1) DE3581039D1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011039795A1 (ja) * 2009-09-29 2011-04-07 パナソニック株式会社 半導体装置とその製造方法

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0854506A3 (en) * 1987-03-04 1999-03-31 Canon Kabushiki Kaisha Electrically connecting member and electric circuit member
JPH0817189B2 (ja) * 1989-01-13 1996-02-21 三菱電機株式会社 半導体装置の製造方法
US5229646A (en) * 1989-01-13 1993-07-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with a copper wires ball bonded to aluminum electrodes
IT1233008B (it) * 1989-09-21 1992-03-14 Sgs Thomson Microelectronics Dispositivo integrato con connessioni perfezionate fra i terminali e la piastrina di materiale semiconduttore integrante componenti elettronici
US5156999A (en) * 1990-06-08 1992-10-20 Wai-Hon Lee Packaging method for semiconductor laser/detector devices
FR2678773B1 (fr) * 1991-07-05 1997-03-14 Thomson Csf Procede de cablage entre des sorties de boitier et des elements d'hybride.
US5825623A (en) * 1995-12-08 1998-10-20 Vlsi Technology, Inc. Packaging assemblies for encapsulated integrated circuit devices
CN100397602C (zh) * 1998-10-05 2008-06-25 库利克及索法工业公司 半导体铜键合焊点表面保护
US6352743B1 (en) * 1998-10-05 2002-03-05 Kulicke & Soffa Investments, Inc. Semiconductor copper band pad surface protection
US6790757B1 (en) * 1999-12-20 2004-09-14 Agere Systems Inc. Wire bonding method for copper interconnects in semiconductor devices
EP1306898A1 (en) * 2001-10-29 2003-05-02 Dialog Semiconductor GmbH Sub-milliohm on-chip interconnection
JP3943416B2 (ja) * 2002-03-07 2007-07-11 株式会社ルネサステクノロジ 半導体装置の製造方法
CN100347853C (zh) * 2003-08-07 2007-11-07 富士通株式会社 引线框架及其制造方法以及半导体器件
KR100998042B1 (ko) * 2004-02-23 2010-12-03 삼성테크윈 주식회사 리드 프레임 및 이를 구비한 반도체 패키지의 제조방법
AT12326U1 (de) * 2009-04-20 2012-03-15 Austria Tech & System Tech Verfahren zum vorbehandeln eines rahmen- bzw. trägerelements für eine herstellung einer leiterplatte, sowie rahmen- bzw. trägerelement und verwendung hiefür
JP6239840B2 (ja) * 2013-03-27 2017-11-29 ローム株式会社 半導体装置および半導体装置の製造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4810904B1 (enExample) * 1969-03-12 1973-04-09
US3706840A (en) * 1971-05-10 1972-12-19 Intersil Inc Semiconductor device packaging
US3914858A (en) * 1974-08-23 1975-10-28 Nitto Electric Ind Co Method of making sealed cavity molded semiconductor devices
US4188438A (en) * 1975-06-02 1980-02-12 National Semiconductor Corporation Antioxidant coating of copper parts for thermal compression gang bonding of semiconductive devices
US4248920A (en) * 1978-04-26 1981-02-03 Tokyo Shibaura Denki Kabushiki Kaisha Resin-sealed semiconductor device
US4218701A (en) * 1978-07-24 1980-08-19 Citizen Watch Co., Ltd. Package for an integrated circuit having a container with support bars
FR2439478A1 (fr) * 1978-10-19 1980-05-16 Cii Honeywell Bull Boitier plat pour dispositifs a circuits integres
US4224499A (en) * 1978-10-20 1980-09-23 General Electric Company Laser welding aluminum to copper
DE2929623C2 (de) * 1979-07-21 1981-11-26 W.C. Heraeus Gmbh, 6450 Hanau Feinstdraht aus einer Aluminiumlegierung
JPS5948714B2 (ja) * 1979-10-29 1984-11-28 株式会社日立製作所 共晶反応を利用して金属母材を圧接する方法
JPS56137664A (en) * 1980-03-31 1981-10-27 Chiyou Lsi Gijutsu Kenkyu Kumiai Lead frame and semiconductor device having lead frame
JPS582054A (ja) * 1981-06-26 1983-01-07 Fujitsu Ltd 半導体装置
US4434347A (en) * 1981-08-19 1984-02-28 Fairchild Camera And Instrument Corporation Lead frame wire bonding by preheating
US4422233A (en) * 1981-08-31 1983-12-27 Uop Inc. Method for producing high temperature electrical connection
US4384899A (en) * 1981-11-09 1983-05-24 Motorola Inc. Bonding method adaptable for manufacturing capacitive pressure sensing elements
JPS5889831A (ja) * 1981-11-24 1983-05-28 Hitachi Ltd ワイヤボンデイング方法および装置
US4633573A (en) * 1982-10-12 1987-01-06 Aegis, Inc. Microcircuit package and sealing method
US4498121A (en) * 1983-01-13 1985-02-05 Olin Corporation Copper alloys for suppressing growth of Cu-Al intermetallic compounds
JPS59130449A (ja) * 1983-01-17 1984-07-27 Nec Corp 絶縁型半導体素子用リードフレーム
JPS59177955A (ja) * 1983-03-28 1984-10-08 Toshiba Corp 半導体装置
JPH0622328A (ja) * 1992-07-06 1994-01-28 Matsushita Electric Ind Co Ltd 地磁気補正装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011039795A1 (ja) * 2009-09-29 2011-04-07 パナソニック株式会社 半導体装置とその製造方法

Also Published As

Publication number Publication date
KR900000439B1 (ko) 1990-01-30
KR860003655A (ko) 1986-05-28
DE3581039D1 (de) 1991-02-07
EP0178170B1 (en) 1991-01-02
EP0178170A3 (en) 1987-03-25
US4891333A (en) 1990-01-02
CN85107077A (zh) 1986-10-01
CN85107077B (zh) 1988-01-27
JPS6189643A (ja) 1986-05-07
EP0178170A2 (en) 1986-04-16

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term