JPS6138612B2 - - Google Patents

Info

Publication number
JPS6138612B2
JPS6138612B2 JP52126318A JP12631877A JPS6138612B2 JP S6138612 B2 JPS6138612 B2 JP S6138612B2 JP 52126318 A JP52126318 A JP 52126318A JP 12631877 A JP12631877 A JP 12631877A JP S6138612 B2 JPS6138612 B2 JP S6138612B2
Authority
JP
Japan
Prior art keywords
layer
wiring
electrode terminal
gold
stress relaxation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52126318A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5459080A (en
Inventor
Susumu Sato
Hideo Tsunemitsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP12631877A priority Critical patent/JPS5459080A/ja
Priority to FR7829713A priority patent/FR2406893A1/fr
Priority to US05/952,543 priority patent/US4244002A/en
Priority to DE2845612A priority patent/DE2845612C2/de
Publication of JPS5459080A publication Critical patent/JPS5459080A/ja
Publication of JPS6138612B2 publication Critical patent/JPS6138612B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W72/30—
    • H10W72/012—
    • H10W72/073—
    • H10W72/07336—
    • H10W72/251—
    • H10W72/5522—
    • H10W72/923—
    • H10W72/952—

Landscapes

  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Measuring Fluid Pressure (AREA)
JP12631877A 1977-10-19 1977-10-19 Semiconductor device Granted JPS5459080A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP12631877A JPS5459080A (en) 1977-10-19 1977-10-19 Semiconductor device
FR7829713A FR2406893A1 (fr) 1977-10-19 1978-10-18 Dispositif a semi-conducteur a electrodes de raccordement en saillie
US05/952,543 US4244002A (en) 1977-10-19 1978-10-18 Semiconductor device having bump terminal electrodes
DE2845612A DE2845612C2 (de) 1977-10-19 1978-10-19 Halbleiteranordnung mit höckerförmigen Anschlußelektroden

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12631877A JPS5459080A (en) 1977-10-19 1977-10-19 Semiconductor device

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP60296893A Division JPS6211253A (ja) 1985-12-27 1985-12-27 半導体装置
JP60296892A Division JPS6211252A (ja) 1985-12-27 1985-12-27 半導体装置

Publications (2)

Publication Number Publication Date
JPS5459080A JPS5459080A (en) 1979-05-12
JPS6138612B2 true JPS6138612B2 (enExample) 1986-08-30

Family

ID=14932210

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12631877A Granted JPS5459080A (en) 1977-10-19 1977-10-19 Semiconductor device

Country Status (4)

Country Link
US (1) US4244002A (enExample)
JP (1) JPS5459080A (enExample)
DE (1) DE2845612C2 (enExample)
FR (1) FR2406893A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10647133B2 (en) 2017-10-31 2020-05-12 Seiko Epson Corporation Medium transporting device and recording apparatus

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5925387B2 (ja) * 1980-06-10 1984-06-16 株式会社東芝 半導体装置
JPS57170554A (en) * 1981-04-15 1982-10-20 Hitachi Ltd Semiconductor device
JPS593954A (ja) * 1982-06-29 1984-01-10 Mitsubishi Electric Corp 半導体装置
IT1156085B (it) * 1982-10-25 1987-01-28 Cselt Centro Studi Lab Telecom Dispositivo optoelettronico e procedimento per la sua fabbricazione
DE3727488C2 (de) * 1987-08-18 1994-05-26 Telefunken Microelectron Optoelektronisches Bauelement
US5208186A (en) * 1989-02-09 1993-05-04 National Semiconductor Corporation Process for reflow bonding of bumps in IC devices
US4922322A (en) * 1989-02-09 1990-05-01 National Semiconductor Corporation Bump structure for reflow bonding of IC devices
JPH0437067A (ja) * 1990-05-31 1992-02-07 Canon Inc 半導体素子用電極及び該電極を有する半導体装置及びその製造方法
US6388203B1 (en) 1995-04-04 2002-05-14 Unitive International Limited Controlled-shaped solder reservoirs for increasing the volume of solder bumps, and structures formed thereby
ATE240586T1 (de) 1995-04-05 2003-05-15 Unitive Int Ltd Eine löthöckerstruktur für ein mikroelektronisches substrat
KR0145128B1 (ko) * 1995-04-24 1998-08-17 김광호 열방열 핀을 구비한 내부 리드 본딩 장치 및 이를 이용한 내부 리드 본딩 방법
US5617991A (en) * 1995-12-01 1997-04-08 Advanced Micro Devices, Inc. Method for electrically conductive metal-to-metal bonding
US6184581B1 (en) * 1997-11-24 2001-02-06 Delco Electronics Corporation Solder bump input/output pad for a surface mount circuit device
DE60108413T2 (de) * 2000-11-10 2005-06-02 Unitive Electronics, Inc. Verfahren zum positionieren von komponenten mit hilfe flüssiger antriebsmittel und strukturen hierfür
US6863209B2 (en) 2000-12-15 2005-03-08 Unitivie International Limited Low temperature methods of bonding components
US7531898B2 (en) * 2002-06-25 2009-05-12 Unitive International Limited Non-Circular via holes for bumping pads and related structures
WO2004001837A2 (en) 2002-06-25 2003-12-31 Unitive International Limited Methods of forming electronic structures including conductive shunt layers and related structures
US7547623B2 (en) * 2002-06-25 2009-06-16 Unitive International Limited Methods of forming lead free solder bumps
TWI225899B (en) * 2003-02-18 2005-01-01 Unitive Semiconductor Taiwan C Etching solution and method for manufacturing conductive bump using the etching solution to selectively remove barrier layer
US7049216B2 (en) 2003-10-14 2006-05-23 Unitive International Limited Methods of providing solder structures for out plane connections
TW200603698A (en) 2004-04-13 2006-01-16 Unitive International Ltd Methods of forming solder bumps on exposed metal pads and related structures
US20060205170A1 (en) * 2005-03-09 2006-09-14 Rinne Glenn A Methods of forming self-healing metal-insulator-metal (MIM) structures and related devices
US7674701B2 (en) 2006-02-08 2010-03-09 Amkor Technology, Inc. Methods of forming metal layers using multi-layer lift-off patterns
US7932615B2 (en) 2006-02-08 2011-04-26 Amkor Technology, Inc. Electronic devices including solder bumps on compliant dielectric layers
US8569886B2 (en) 2011-11-22 2013-10-29 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus of under bump metallization in packaging semiconductor devices
DE102014110473A1 (de) * 2014-07-24 2016-01-28 Osram Opto Semiconductors Gmbh Träger für ein elektrisches Bauelement

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL87258C (enExample) * 1969-01-15
DE2409312C3 (de) * 1974-02-27 1981-01-08 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung mit einer auf der Halbleiteroberfläche angeordneten Metallschicht und Verfahren zu ihrer Herstellung
JPS51147253A (en) * 1975-06-13 1976-12-17 Nec Corp Structure of electrode terminal
JPS5851425B2 (ja) * 1975-08-22 1983-11-16 株式会社日立製作所 ハンドウタイソウチ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10647133B2 (en) 2017-10-31 2020-05-12 Seiko Epson Corporation Medium transporting device and recording apparatus

Also Published As

Publication number Publication date
FR2406893B1 (enExample) 1983-10-07
JPS5459080A (en) 1979-05-12
DE2845612A1 (de) 1979-04-26
FR2406893A1 (fr) 1979-05-18
DE2845612C2 (de) 1987-01-22
US4244002A (en) 1981-01-06

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