JP4036166B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP4036166B2 JP4036166B2 JP2003308621A JP2003308621A JP4036166B2 JP 4036166 B2 JP4036166 B2 JP 4036166B2 JP 2003308621 A JP2003308621 A JP 2003308621A JP 2003308621 A JP2003308621 A JP 2003308621A JP 4036166 B2 JP4036166 B2 JP 4036166B2
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Description
図1は、本発明の第1実施形態に係る半導体装置S1の構造を示す図であり、(a)は半導体装置S1の概略平面図、(b)は(a)中のA−A線に沿った概略断面図である。図2は、図1に示される半導体装置における非接続パッド近傍部の拡大図であり、(a)は(b)のB−B線に沿った概略断面図、(b)は概略平面図である。
本実施形態の第1の製造方法は、大きくは、次の通りである。まず、半導体ウェハに対してチップ単位毎に、ワイヤ接続パッド11aおよび非接続パッド11bを形成する(素子およびパッド形成工程)。そして、これらパッド11a、11bを介して半導体ウェハにおけるチップ単位毎に電気的特性の検査を行う(特性検査工程)。
本実施形態の第1の製造方法は、大きくは、次の通りである。まず、上記第1の製造方法と同様に、素子およびパッド形成工程、特性検査工程を行う。
ところで、本実施形態では、半導体チップ10と、半導体チップ10に形成された金属製のパッド11とを備え、パッド11は、金属製のボンディングワイヤ30が接続されているワイヤ接続パッド11aと、ボンディングワイヤ30が接続されていない非接続パッド11bとから構成されている半導体装置S1において、非接続パッド11bの表面が、ワイヤボンディングにおける1次ボンディングによって形成されたバンプ状の被覆部材14によって被覆されていることを特徴とする半導体装置S1が提供される。
図6は、本発明の第2実施形態に係る半導体装置の要部構造を示す概略断面図である。
図7は、本発明の第3実施形態に係る半導体装置の要部構造を示す概略断面図である。
なお、上記実施形態では、半導体装置は樹脂部材40で封止された樹脂封止型半導体装置であったが、樹脂で封止されたものでなくてもよい。
11b…非接続パッド、14…被覆部材としてのバンプ、
14a…被覆部材としての樹脂被覆部材、14b…被覆部材としての熱酸化被覆膜、
21…リード部材としてのリードフレームのリード部、30…ボンディングワイヤ、
40…樹脂部材、P1…プローブ。
Claims (14)
- 半導体チップ(10)と、
前記半導体チップ(10)に形成された金属製のパッド(11)とを備え、
前記パッドは、金属製のボンディングワイヤ(30)が接続されているワイヤ接続パッド(11a)と、前記ボンディングワイヤ(30)が接続されていない非接続パッド(11b)とから構成されている半導体装置において、
前記非接続パッド(11b)の表面は、前記非接続パッド(11b)を構成する金属が熱により酸化されてなる熱酸化膜からなる被覆部材(14b)によって被覆されていることを特徴とする半導体装置。 - 前記ボンディングワイヤ(30)は金もしくはアルミニウムからなるものであることを特徴とする請求項1に記載の半導体装置。
- 前記非接続パッド(11b)は、アルミニウムからなるものであることを特徴とする請求項1または2に記載の半導体装置。
- 前記非接続パッド(11b)は、アルミニウムの多層膜であることを特徴とする請求項3記載の半導体装置。
- 前記非接続パッド(11b)は、電気的特性を検査するための検査用のパッドとして用いられるものであることを特徴とする請求項1ないし4のいずれか1つに記載の半導体装置。
- 前記半導体チップ(10)の周囲には、リード部材(21)が配設されており、
このリード部材(21)と前記ワイヤ接続パッド(11a)とが前記ボンディングワイヤ(30)を介して接続されていることを特徴とする請求項1ないし5のいずれか1つに記載の半導体装置。 - 前記半導体チップ(10)、前記ボンディングワイヤ(30)および前記リード部材(21)における前記ボンディングワイヤ(30)との接続部は、樹脂部材(40)によって包み込まれるように封止されていることを特徴とする請求項6に記載の半導体装置。
- 半導体ウェハに対してチップ単位毎に、金属製のボンディングワイヤ(30)が接続される金属製のワイヤ接続パッド(11a)および前記ボンディングワイヤ(30)が接続されない金属製の非接続パッド(11b)を形成し、
前記接続パッド(11a)および前記非接続パッド(11b)を介して前記半導体ウェハにおけるチップ単位毎に電気的特性の検査を行った後、
前記半導体ウェハを分断して半導体チップ(10)を形成し、
続いて、前記半導体チップ(10)における前記ワイヤ接続パッド(11a)に、ワイヤボンディングによって前記ボンディングワイヤ(30)を接続するようにした半導体装置の製造方法において、
前記電気的特性の検査の後であって前記半導体ウェハの分断を行う前に、前記半導体ウェハに位置する前記非接続パッド(11b)の表面に対して、当該表面を被覆する被覆部材(14、14a、14b)を形成する工程を有し、
前記被覆部材(14b)の形成は、前記非接続パッド(11b)に熱を付与して前記非接続パッド(11b)の表面を構成する金属を熱で酸化することにより行うことを特徴とする半導体装置の製造方法。 - 前記ボンディングワイヤ(30)として金もしくはアルミニウムからなるものを用いることを特徴とする請求項8に記載の半導体装置の製造方法。
- 前記非接続パッド(11b)としてアルミニウムからなるものを用いることを特徴とする請求項8または9に記載の半導体装置の製造方法。
- 前記非接続パッド(11b)として、アルミニウムの多層膜からなるものを用いることを特徴とする請求項10に記載の半導体装置の製造方法。
- 前記電気的特性の検査工程は、前記ワイヤ接続パッド(11a)および前記非接続パッド(11b)の表面に対してプローブ(P1)を押しつけることにより行われるものであることを特徴とする請求項8ないし11のいずれか1つに記載の半導体装置の製造方法。
- 前記半導体チップ(10)における前記ワイヤ接続パッド(11a)にワイヤボンディングによって前記ボンディングワイヤ(30)を形成する工程では、
前記半導体チップ(10)の周囲に配設されたリード部材(21)と前記ワイヤ接続パッド(11a)との間で前記ワイヤボンディングを行うようにしたことを特徴とする請求項8ないし12のいずれか1つに記載の半導体装置の製造方法。 - 前記半導体チップ(10)における前記ワイヤ接続パッド(11a)にワイヤボンディングによって前記ボンディングワイヤ(30)を形成する工程を行った後、
前記半導体チップ(10)、前記ボンディングワイヤ(30)および前記リード部材(21)における前記ボンディングワイヤ(30)との接続部を、樹脂部材(40)によって包み込むように封止することを特徴とする請求項8ないし13のいずれか1つに記載の半導体装置の製造方法。
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