JPS6189643A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JPS6189643A
JPS6189643A JP59211960A JP21196084A JPS6189643A JP S6189643 A JPS6189643 A JP S6189643A JP 59211960 A JP59211960 A JP 59211960A JP 21196084 A JP21196084 A JP 21196084A JP S6189643 A JPS6189643 A JP S6189643A
Authority
JP
Japan
Prior art keywords
copper
electrode
lead
aluminum
copper alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59211960A
Other languages
English (en)
Other versions
JPH0332912B2 (ja
Inventor
Hiroyuki Baba
博之 馬場
Takashi Matsuzaki
隆 松崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59211960A priority Critical patent/JPS6189643A/ja
Priority to KR1019850006793A priority patent/KR900000439B1/ko
Priority to CN85107077A priority patent/CN85107077B/zh
Priority to EP85307236A priority patent/EP0178170B1/en
Priority to DE8585307236T priority patent/DE3581039D1/de
Publication of JPS6189643A publication Critical patent/JPS6189643A/ja
Priority to US07/150,499 priority patent/US4891333A/en
Publication of JPH0332912B2 publication Critical patent/JPH0332912B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/22—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded
    • B23K20/233—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer
    • B23K20/2333—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer one layer being aluminium, magnesium or beryllium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4825—Connection or disconnection of other leads to or from flat leads, e.g. wires, bumps, other flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48738—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48747—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48847—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/78251—Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/78252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the capillary or wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053—Bonding environment
    • H01L2224/85054—Composition of the atmosphere
    • H01L2224/85065—Composition of the atmosphere being reducing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053—Bonding environment
    • H01L2224/85054—Composition of the atmosphere
    • H01L2224/85075—Composition of the atmosphere being inert
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/8521—Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/85214—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85447—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/85948—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01007—Nitrogen [N]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01018—Argon [Ar]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/2076—Diameter ranges equal to or larger than 100 microns
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S228/00—Metal fusion bonding
    • Y10S228/904—Wire bonding
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49121—Beam lead frame or beam lead device

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、半導体装置及びその製造方法に関する。
〔発明の技術的背景とその問題点〕
従来の半導体装置の製造方法では、第３図に示す如く、
銅等からなるリード電極１の表面にＮｉメッキ層２を形
成し、とのＮｉメッキ層２を介してアルミニウムからな
るボンディング線３によシ、半導体素子４上の電極・２
ツド５とリード　　　　・電極Ｊとを接続している。な
お、同図中６は、１１１１脂封止体、７はリードフレー
ム８上にＮｉメッキ）Ｎ　９を介して形成された平田層
である。
しかしながら、Ｎｌメッキ層２，９を形成するものでは
、メッキ品質のばらつきが大きいこと、メッキ処理のた
めに製造工程が複雑になること、更にメッキ処理のため
に製造コストが高くなること等の間３１αがある。そこ
で、近年ではアルミニウム力・らなるボンディングｒ［
３３をメッキ処理を箔していない銅等からなるリード電
極１に直％％”；Ｚすることが行われている。
しかしながら、銅等からなる’）　　Ｆ”　′ｌ’）Ｌ
　ｔヤ１にアルミニウムからなるボンディング〃ヌ３を
直接接続した半導体装置は、高温（約８０℃）、高４　
（ＪＦ’３９０　％　）下で長時間の放置試験を行うと
、ホ゛ンガインダ線３とリード電・臣１の接合界面でオ
ープ不良を発生し、イａ幀件を低下する間渭があった。
〔発明の目的〕
本発明は、高温・高湿下で役れた電気特性を光ｆｊｆ　
Ｌ得る信相性の高い半導体装置及びこの牛亦体装置を容
易に得ることができるずミ憤体装置の鱈造方法を提供す
ることをその目的とするものである。
〔発明の實９２〕 本発明は、′凋または銅合金からなるリード電極にアル
ミニウムからなるボンディング線のζ″、１部を反応層
の厚さが０．２１１ｍ以上になるようにし。
て接続したことにより、高温・高湿下で優れた電気特性
を発揮する半導体装置である。
また、本発明は、銅または銅合金からなるリードフレー
ムの被ボンアイング領域ニアルミニウムからなるボンデ
ィング線を接続すると共に、熱処理を柿して銅またはイ
；１・１合金とアルミニウムとの反応層の厚さを０２μ
ｍ以上にする工程を設けたことにより、高温・高ｚイ下
で優れた電偲特性を発押し得る信頼性の高い手７ｎ体装
置を容易に得ることができる半導体装置の製造方法であ
る。
〔発明の実施例〕
以下、本発明方法及び実施例の半導体装置；ζついて図
面を参照して説明する。まず、第１１霞ＩＡ）に示す如
く、銅まだは銅合金からなるリードフレーム２０のマウ
ント部に牛田層２１を介してヰ導体素子２２を装着する
。
次に、同図（Ｂ）に示す如く、純度９９．９９弼。
２００μφのアルミニウムからなるざンディング４、ｉ
コ２３の一端部を非酸化性雰囲気中で＃−桿体素子２１
０′（君ケ・ぐラド２４に超音波ボンディング法により
…（着する。次いで、ボンディング線２３の他端部をリ
ードフレーム２０のリード電極２５にう１■述と同様に
超音波ボンディング法により蝕５ン′マする。リード電
イ返２５もリードフレーム２０と同様に洞寸だは銅合金
で形成されている。
次に、これに杓５００℃の温度で熱処理を施し、ボンデ
ィング線２３とリード、電極２５の鯉Ｎ′旨Ｉ；；に形
ひされるアルミニウムと”ｆ、’ｉｌ賛だ（は銅合金と
の反応１．３：の厚さを０．２μ７ｎ以上にする。
然る後、同図（Ｃ）に示す如く、これにモール１゜処理
を）１．邑して＃Ｊξ工体塁子２１、リードフレーム２
０１．ｙ＋ンディング線２３及びリード′・五び２５等
を１コ１脂封市体２６で一体に封止した＃感体装置”’
（，３０を得る。
このようにして得られた牛馬体装置Ｌ）で（１１，、屏
ンディングデ、デ２３とリード′Ｌｌ’ｌ’、　’ＩＩ
メ２５との接÷）では、０２μｍ以上の１−［Ｉい反応
１．Ｈ＞を形成して行われるので、高温・高湿下でもボ
ンディング述２３とリード電極２５との接合部でオープ
ン不良が発生するのを防止することができる。その、ｒ
、、；　４１Ｌ、信頼性の高いヰ導体装的゛３０を得る
ことができる。また、リードフレーム２０及びリードゴ
ー１劉２５にメッキ処理を施す必要がないので、％］貴
工程を簡略にできると共に製造コストを低減させること
ができる。
なお、アルミニウムと銅または銅合金とで形成される反
応層の厚さを０２μｍ以上としたの（ヒ：、以下に示す
実験例から明らかなように、０．２　Ｊｉｍに満たない
場合には、高温・高湿下でオーツ０ン不良による不良品
が発生するからである。
実験例 メッキ層を形成していない銅または：（Ｙ４合金からな
るリードフレーム２０にヰ患体素子２２を装ｘＩシた後
、非酸化性の雰囲気中でヰ３・ｆ体素子２２の７［ｋパ
ッド２５とリードフレーム２０のリード′准へ２５間に
ｊイ１丘、皮ｆボンディング法（こより、アルミニウム
からな７．＋　＋ｆンディング紅２３を架設した。次い
で、これにモールド処理を施し、全体を樹脂封止体２６
で封止しだ４Ｊ体装置（実験例品１）を作製した。この
場合第２図（Ａ）に示す如く、リード電極２５の表面に
はメッキ層３１が形成されておらず、デンディング線２
３とリード電極２５間には反応層は存在していない。
牛と１体素子２２の装着及びボンディング線２３のリー
ド電極２５との接合を還元性の雰囲気で行った以外は、
実験例品１と同様にして実験例品２の４８募体装置を作
成した。
デンディング線２３とリード電＠２５との接続後に熱処
理を施して第２図（Ｂ）に示す如く、反応層３２をボン
ディング線２３とリード電極２５間に形成した以外は、
実験例品２と同様にして牛６体装置を得た。この場合、
反応層３２の厚さが０．１μｍ以下のものを実験例品３
．０．２〜０．５μｍのものを実験例品４．０．５〜１
μｍのものを実、験例品５．１〜２μｍのものを実験例
品６としたＯ また、リードフレーム２０及びリード電極２．５上に第
２図（Ｃ）に示す如く、Ｎｉメッキ層３１を予め形成し
ておき、実験例品２と同様（して得た半導体装置を実験
例品３とした。
このようにして得られた実験別品１〜７０半導体装置の
各々の２０個について、１５０℃の温度下で５００時間
、１０００時間、１５００時間。
２０００時間、２５００時間以上の高温放置試験。
及び１７５℃の温度下で３００時間、５００時間、１０
００時間、１５００時間以上の高温放置試験を行い、デ
ンディング線２３とリード電極２５間でのオージン不良
による不良品の発生状況を調べたところ、下記表の結果
を得た。
上記表から明らかなように、桐マたは夕１す合金とアル
ミニウムで形成される反応層３２が大ヒい程オープン不
良による不良品の発生数は減少し、反応層３２の厚さが
０．２μｍ以上になると、Ｎｉメッキ層３１があるもの
と同様に高い信ｉ蹟注を発揮することが判る。
また、高温・高湿（８０℃、９０φ）中で長時間放置試
験を上述の実験例品１〜７のヰｑ体装置について行った
ところ、同様に反応層３２の厚さが０４２μｍ以上にな
ると不良品が発生しないことが判った。更に、熱衝撃試
験（−４５℃→１５０℃）、及び熱疲労試験においても
同？−にの結果が得られた。
〔発明の効果〕
以上説明した如く、本発明に係る半導体装置及びその製
造方法によれば、高温・高湿下で簀れた電気特性を発揮
する信頼性の晶い牛ノ・）体装駈を容易に得ることがで
きるものでおる。
【図面の簡単な説明】
第１図体）乃至同図Ｃ）は、本発明方法を工ｆＨｊＩ、
■に示す説明図、第２トン１（Ａ）乃至同ン１（Ｃ）は
、リード１；を極とボンディング線の接続状態を示す説
明図、第３図は、従来の方法で製造されたヰ戸体装置の
断面ヌ１である。 ２０・・・リードフレーム、２１・・−Ｖゼ田層、２２
・・・＃ＷＬ体素子、２、？・・・ボンディング線、２
４・・・電極／やラド、２５・・・リード電極、２６・
・・樹脂封止体１．？　０　・＝−生導体装置、３１・
・・Ｎｉメッキ層、３２・・・反応層。

Claims (2)

    【特許請求の範囲】
  1. （１）銅または銅合金からなるリードフレームの所定領
    域に装着された半導体素子と、前記リードフレームに形
    成されたリード電極と、前記半導体素子の電極パッドに
    一端が接続され他端部が該リード電極に接続部の反応層
    の厚さが０．２μｍ以上になるように接続されたアルミ
    ニウムからなるボンディング線と、前記リードフレーム
    、前記リード電極の一部分を外部に導出するようにして
    前記半導体素子、前記電極パッド及び該ボンディング線
    を封止した樹脂封止体とを具備することを特徴とする半
    導体装置。
  2. （２）半導体素子を装着した銅または銅合金からなるリ
    ードフレームのリード電極に、一端部が前記半導体素子
    の電極パッドに接続されるアルミニウムからなるボンデ
    ィング線の他端部を融着し、かつ、その融着部に熱処理
    を施して前記銅または銅合金と前記アルミニウムとで形
    成される反応層の厚さを０．２μｍ以上にする工程を具
    備することを特徴とする半導体装置の製造方法。
JP59211960A 1984-10-09 1984-10-09 半導体装置及びその製造方法 Granted JPS6189643A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP59211960A JPS6189643A (ja) 1984-10-09 1984-10-09 半導体装置及びその製造方法
KR1019850006793A KR900000439B1 (ko) 1984-10-09 1985-09-17 접합선의 접속을 개량한 반도체 장치와 그 제조방법
CN85107077A CN85107077B (zh) 1984-10-09 1985-09-24 半导体器件及其制造法
EP85307236A EP0178170B1 (en) 1984-10-09 1985-10-09 Semiconductor device having a bonding wire and method for manufacturing it
DE8585307236T DE3581039D1 (de) 1984-10-09 1985-10-09 Halbleitervorrichtung mit einem verbindungsdraht und verfahren zu ihrer herstellung.
US07/150,499 US4891333A (en) 1984-10-09 1988-02-01 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59211960A JPS6189643A (ja) 1984-10-09 1984-10-09 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPS6189643A true JPS6189643A (ja) 1986-05-07
JPH0332912B2 JPH0332912B2 (ja) 1991-05-15

Family

ID=16614547

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59211960A Granted JPS6189643A (ja) 1984-10-09 1984-10-09 半導体装置及びその製造方法

Country Status (6)

Country Link
US (1) US4891333A (ja)
EP (1) EP0178170B1 (ja)
JP (1) JPS6189643A (ja)
KR (1) KR900000439B1 (ja)
CN (1) CN85107077B (ja)
DE (1) DE3581039D1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2011039795A1 (ja) * 2009-09-29 2013-02-21 パナソニック株式会社 半導体装置とその製造方法

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0854506A3 (en) * 1987-03-04 1999-03-31 Canon Kabushiki Kaisha Electrically connecting member and electric circuit member
US5229646A (en) * 1989-01-13 1993-07-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with a copper wires ball bonded to aluminum electrodes
JPH0817189B2 (ja) * 1989-01-13 1996-02-21 三菱電機株式会社 半導体装置の製造方法
IT1233008B (it) * 1989-09-21 1992-03-14 Sgs Thomson Microelectronics Dispositivo integrato con connessioni perfezionate fra i terminali e la piastrina di materiale semiconduttore integrante componenti elettronici
US5156999A (en) * 1990-06-08 1992-10-20 Wai-Hon Lee Packaging method for semiconductor laser/detector devices
FR2678773B1 (fr) * 1991-07-05 1997-03-14 Thomson Csf Procede de cablage entre des sorties de boitier et des elements d'hybride.
US5825623A (en) * 1995-12-08 1998-10-20 Vlsi Technology, Inc. Packaging assemblies for encapsulated integrated circuit devices
US6352743B1 (en) * 1998-10-05 2002-03-05 Kulicke & Soffa Investments, Inc. Semiconductor copper band pad surface protection
CN100397602C (zh) * 1998-10-05 2008-06-25 库利克及索法工业公司 半导体铜键合焊点表面保护
US6790757B1 (en) 1999-12-20 2004-09-14 Agere Systems Inc. Wire bonding method for copper interconnects in semiconductor devices
EP1306898A1 (en) * 2001-10-29 2003-05-02 Dialog Semiconductor GmbH Sub-milliohm on-chip interconnection
JP3943416B2 (ja) * 2002-03-07 2007-07-11 株式会社ルネサステクノロジ 半導体装置の製造方法
CN100347853C (zh) * 2003-08-07 2007-11-07 富士通株式会社 引线框架及其制造方法以及半导体器件
KR100998042B1 (ko) * 2004-02-23 2010-12-03 삼성테크윈 주식회사 리드 프레임 및 이를 구비한 반도체 패키지의 제조방법
AT12326U1 (de) 2009-04-20 2012-03-15 Austria Tech & System Tech Verfahren zum vorbehandeln eines rahmen- bzw. trägerelements für eine herstellung einer leiterplatte, sowie rahmen- bzw. trägerelement und verwendung hiefür
JP6239840B2 (ja) * 2013-03-27 2017-11-29 ローム株式会社 半導体装置および半導体装置の製造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4810904B1 (ja) * 1969-03-12 1973-04-09
US3706840A (en) * 1971-05-10 1972-12-19 Intersil Inc Semiconductor device packaging
US3914858A (en) * 1974-08-23 1975-10-28 Nitto Electric Ind Co Method of making sealed cavity molded semiconductor devices
US4188438A (en) * 1975-06-02 1980-02-12 National Semiconductor Corporation Antioxidant coating of copper parts for thermal compression gang bonding of semiconductive devices
US4248920A (en) * 1978-04-26 1981-02-03 Tokyo Shibaura Denki Kabushiki Kaisha Resin-sealed semiconductor device
US4218701A (en) * 1978-07-24 1980-08-19 Citizen Watch Co., Ltd. Package for an integrated circuit having a container with support bars
FR2439478A1 (fr) * 1978-10-19 1980-05-16 Cii Honeywell Bull Boitier plat pour dispositifs a circuits integres
US4224499A (en) * 1978-10-20 1980-09-23 General Electric Company Laser welding aluminum to copper
DE2929623C2 (de) * 1979-07-21 1981-11-26 W.C. Heraeus Gmbh, 6450 Hanau Feinstdraht aus einer Aluminiumlegierung
JPS5948714B2 (ja) * 1979-10-29 1984-11-28 株式会社日立製作所 共晶反応を利用して金属母材を圧接する方法
JPS56137664A (en) * 1980-03-31 1981-10-27 Chiyou Lsi Gijutsu Kenkyu Kumiai Lead frame and semiconductor device having lead frame
JPS582054A (ja) * 1981-06-26 1983-01-07 Fujitsu Ltd 半導体装置
US4434347A (en) * 1981-08-19 1984-02-28 Fairchild Camera And Instrument Corporation Lead frame wire bonding by preheating
US4422233A (en) * 1981-08-31 1983-12-27 Uop Inc. Method for producing high temperature electrical connection
US4384899A (en) * 1981-11-09 1983-05-24 Motorola Inc. Bonding method adaptable for manufacturing capacitive pressure sensing elements
JPS5889831A (ja) * 1981-11-24 1983-05-28 Hitachi Ltd ワイヤボンデイング方法および装置
US4633573A (en) * 1982-10-12 1987-01-06 Aegis, Inc. Microcircuit package and sealing method
US4498121A (en) * 1983-01-13 1985-02-05 Olin Corporation Copper alloys for suppressing growth of Cu-Al intermetallic compounds
JPS59130449A (ja) * 1983-01-17 1984-07-27 Nec Corp 絶縁型半導体素子用リードフレーム
JPS59177955A (ja) * 1983-03-28 1984-10-08 Toshiba Corp 半導体装置
JPH0622328A (ja) * 1992-07-06 1994-01-28 Matsushita Electric Ind Co Ltd 地磁気補正装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2011039795A1 (ja) * 2009-09-29 2013-02-21 パナソニック株式会社 半導体装置とその製造方法

Also Published As

Publication number Publication date
CN85107077A (zh) 1986-10-01
US4891333A (en) 1990-01-02
EP0178170B1 (en) 1991-01-02
KR900000439B1 (ko) 1990-01-30
JPH0332912B2 (ja) 1991-05-15
CN85107077B (zh) 1988-01-27
DE3581039D1 (de) 1991-02-07
EP0178170A3 (en) 1987-03-25
EP0178170A2 (en) 1986-04-16
KR860003655A (ko) 1986-05-28

Similar Documents

Publication Publication Date Title
JPS6189643A (ja) 半導体装置及びその製造方法
US3729820A (en) Method for manufacturing a package of a semiconductor element
JP3356649B2 (ja) 半導体装置及びその製造方法
JPS62266842A (ja) 半導体装置及びその製造方法
JP2503738B2 (ja) リ―ドフレ―ムへの半導体素子の接合方法
JPS62265729A (ja) 半導体装置
JPS61241953A (ja) リ−ドフレ−ムおよびそれを用いた半導体装置
JPS61242051A (ja) 半導体装置
JPS62291951A (ja) 耐半田剥離性を有する耐酸化性ニツケルめつき付きリ−ドフレ−ム
JPS63310149A (ja) 高集積化ｉｃ用パッケ−ジおよびその製造方法
JPS57141933A (en) Semiconductor device
JP3076337B1 (ja) Ｂｇａ型ｉｃパッケージ
JPS59208763A (ja) 樹脂封止型電子装置
JPH0259627B2 (ja)
JPS5855673Y2 (ja) 電子部品の取付装置
JPS60147146A (ja) 半導体用リ−ドフレ−ム
JPH07249648A (ja) 半導体装置
JPH05166871A (ja) 半導体装置
JPS6149442A (ja) チツプキヤリアの樹脂封止方法
JPS62266852A (ja) 半導体集積回路装置
JPH11168148A (ja) 半導体装置
JPH11135697A (ja) 半導体装置およびその製造方法
JPS6118157A (ja) 半導体装置
JPS59204298A (ja) 印刷回路板の形成方法
JPS617654A (ja) レジンモ−ルド半導体の製造法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term