CN85107077B - 半导体器件及其制造法 - Google Patents

半导体器件及其制造法 Download PDF

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Publication number
CN85107077B
CN85107077B CN85107077A CN85107077A CN85107077B CN 85107077 B CN85107077 B CN 85107077B CN 85107077 A CN85107077 A CN 85107077A CN 85107077 A CN85107077 A CN 85107077A CN 85107077 B CN85107077 B CN 85107077B
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Prior art keywords
semiconductor device
lead
autofrettage
bonding wire
wire
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Expired
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CN85107077A
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CN85107077A (zh
Inventor
马场博之
松崎隆
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Toshiba Corp
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Toshiba Corp
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Publication of CN85107077A publication Critical patent/CN85107077A/zh
Publication of CN85107077B publication Critical patent/CN85107077B/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/22—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded
    • B23K20/233—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer
    • B23K20/2333—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer one layer being aluminium, magnesium or beryllium
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Abstract

本发明半导体器件之所以在高温环境中或高温高湿环境中显示出极好的电气性能，是因为以反应层厚度大于等于０．２（微米）的方式，将铝焊线的端部连接于铜或铜合金引线电极。本发明提供的半导体器件制造方法，由于采用了将铝焊线连接于铜或铜合金引线框架的键合区，进行热处理，而使得铜或铜合金与铝的反应层厚度大于等于０．２（微米）的步骤，因而能够容易地制作，可在高温环境中或高温高湿环境中显示极好电气性能的高可靠半导体器件。

Description

半导体器件及其制造法
本发明涉及半导体器件及其制造法。
特别是本发明涉及这样的半导体器件，其中焊线的一端良好地连接于引线框架，另一端连接于一个半导体元件的键合点，它在高温的情况中或在高温高湿的情况中显示了极好的电性能。
如图1所示，在常规的半导体器件制造法中，是在由铜等制成的引线电极1的表面上形成Ni镀层2，半导体元件4上的键合点5和引线电极1经该Ni镀层2用焊线3连接。在附图中，6是树脂密封材料，7是经Ni镀层9而在引线框架8上形成的焊接层。
然而，由于在器件中形成了Ni镀层2和9，这便带来了许多问题，电镀质量极不稳定，进行电镀处理的制造工艺复杂，电镀处理使得成本较高等等。所以近年来一直采用的做法是直接将铝焊线3连接于铜等引线电极1，而不进行电镀处理。
可是，对铝焊线3直接连接于铜等引线电极1的半导体器件，在高温条件下（150℃，170℃）或在高温（大约80℃）高湿（大约90%）的条件下，进行长时间的存放试验，结果发现存在有可靠性降低的问题，这是因为焊线3与引线电极1之间的焊接面开焊所致。
在日本专利申请第55-88318号中，披露了一项解决这个问题的技术，它是用选择活化键合区来完成铜线构成的焊线与铜制引线框架间的焊线跨接，但是，在这项技术中，又出现了焊线上形成的氧化物造成虚焊和难以在焊线端部形成熔固球的问题，而且，由于每次焊接过程都必须活化键合区，使得工作性能下降。
日本专利申请第57-51237号中披露了一项键合工艺技术，它是在保持低气压的罩内，由焊线引出的毛细端部来形成所需形状的球体和防止焊接氧化。然而，这项技术需要复杂的结构，包括维持低气压的罩箱，而且当以一秒或更快的速度进行焊接时，就容易出现虚焊，带来了维持与控制困难的问题。再有一个问题是，由于不可能在形成外部引线的引线框架处防止氧化，所以不能在铜线构成的焊线与铜制引线框架间实现高可靠的焊接。
本发明的目的是提供在高温环境中或在高温高湿环境中显示出极好电气特性的高可靠半导体器件，以及能容易地生产这种器件的制造方法。
本发明半导体器件之所以在高温环境中或在高温高湿环境中显示出极好的电气性能，是因为以反应层厚度大于等于0.2（微米）的方式，将铝焊线的端部连接于铜或铜合金的引线电极上。
本发明进而提供的半导体器件制造方法，由于采用了将铝焊线连接于铜或铜合金引线框架的键合区，进行处理，而使得铜或铜合金与铝的反应层厚度大于等于0.2（微米）的步骤，因而能够容易地制造可在高温环境中或高温高湿环境中显示极好电气特性的高可靠半导体器件。
参照附图，从以下叙述中，将能进一步理解本发明，迅速地对其它目的和许多优点作出评价，附图中相同的参考号指示相同的部分，其中：
图1是用常规方法制造的半导体器件的剖面图;
图2～图5以及图7是解释性附图，依照其步骤说明本发明方法;
图6是曲线图，说明形成反应层的温度与时间的关系;
图8～图10是解释性附图，说明引线电极与焊线连接的状态。
以下参照附图叙述本发明的方法和实施例中的半导体。首先，如图2所示，一个半导体元件22通过焊接层21安装在铜或铜合金的引线框架20的管座部分。这里采用的铜合金可以是磷青铜，也可以是其它含铁为铜合金。
其次，如图3所示，由99.99%纯铝制作的φ200（微米）焊接23的一端用超声波焊接法焊接在半导体元件22的一焊接区24上，而焊线23的另一端也类似地用超声波焊接法焊在引线框架20的一个引线电极25上。如同引线框架20一样，引线电极25也是由铜或铜合金形成的。
接着，进行处理，使焊线23和引线电极25熔接在一起的部分所形成的铝和铜或铜合金反应层厚度大于等于0.2（微米）。
如图4所示，为了对引线电极25进行热处理。具有约600℃温度的加热器40和42从上下两侧夹住引线电极25，并且在引线框架前进到位置Ⅰ时加热。从左至右连续地位移引线框架20，见图4，大约每1.2～1.3秒一次，也就是说，加热器40的一次接触，不给出充分的加热，以形成大于等于0.2（微米）的反应层，这样，在许多与引线框架20的位移相联系的地方，由该处的加热器装置使厚度为0.2（微米）或稍厚的反应层形成。图4说明了两个位置Ⅰ和Ⅱ的情况。在本实施例中，加热器的接触时间大约为0.5秒，加热器安置在五个位置上，图5是图4的侧视剖面图。图5中，引线框架20放置在框架50上，支架50配有吹气孔52，用以输送冷却引线框架20的含氮混合气体。这是为了避免由于引线框架受到加热器40和42以及引线极25的加热而引起焊层21的熔化。可以在空气中进行热处理，可是由于在加热时铜或铜合金框架会被氧化，所以最好是在非氧化气氛或还原气氛中进行。在本实施例中，使用了含90%N2和10%H2的混合气体。这里采用的非氧化气体可以是惰性气体，可以是还原气体或者是它们的混合气体。例如，惰性气体采用氩或氦，还原气体采用氢。图6表示了形成反应层的温度与时间的关系。在本实施例中，焊接部分26的温度保持在400～450℃，进行热处理断续加热的时间总量为大约五秒钟，加热并不局限于断续加热法，仅仅必须做到的是总的加热时间为大约5秒。
以上阐述了元件夹在加热器间的加热方法，还可以采用另一种方法，即将引线框架用几十秒至几分钟的时间，通过温度为350～400℃的氢气加热炉或氮气加热炉，来进行热处理。其它的方法包括有：用喷灯对引线电极25而不对焊接区26加热的方法，用电阻焊机对引线电极25加热的方法和用激光加热引线电极25的方法。而且，并不限于这些方法，其它任何不同的方法，只要能够控制包括图6的阴影部分上部范围的加热温度和时间，都可采用。
从上述反应层的结构图和断面检验中，可得出结论，反应层的成分是Al2Cu，AlCu。
接着，如图7所示，对半导体器件30进行封装处理，用树脂密封材料27将半导体元件22，引线框架20，焊线23和引线电极25等密封为一个整体。
在这样产生的半导体器件30中，由于在焊线23和引线电极25的连接中形成的反应层厚度大于等于0.2（微米），即使在高温环境中，或高温湿环境中，也能够防止焊线23和引线电极25的开焊，所以就制造出了高可靠半导体器件30，而且，不需要对引线框架20和引线电极25进行电镀处理，生产工艺简单，制造成本得到降低。
将铝和铜或铜合金所形成的反应层厚度制成0.2（微米）或稍厚的理由，从以下叙述的实验例可清楚知道，如果厚度小于0.2（微米），在高温环境中或高温高湿环境中会发生开焊，所以产品是废品。
实验例
如图2～图5和图7所示，半导体元件22在非氧化的气氛中安装在不曾有电镀层形成的铜或铜合金引线框架上，然后用超声波焊接法焊接上搭连半导体元件22的焊接区24和引线框架20的引线电极25的铝焊线23。接着对这些组合体进行封装处理，作出半导体器件（试验产品1）。在这种情况下，如图8所示，引线电极25的表面上没有形成电镀层，焊线23和引线电极25之间也没有反应层存在。
组成试验产品2的半导体器件，是将引线框架20在高温还原气氛中彻底进行还原之后，用对试验产品1同样的方法，安装半导体器件22，焊线23引线电极25而构成的。
用对试验产品2相同的方法制造半导体器件，只是在连接焊线23和引线电极25之后，进行热处理，而在焊接线23和引线电极25之间形成了如图9所示的反应层60。在这种情况下，反应层厚为0.1（微米）或更薄的器件取为试验产品3，反应层厚为0.2～0.5（微米）的器件取为试验产品4，反应层厚为0.5～1（微米）的器件取为试验产品5，反应层厚为1～2（微米）的取为试验产品6。
如图10所示，在引线框架20和引线电极25上先形成Ni镀层70之后，用对试验产品2同样的方法制造的半导体器件取为试验产品7。
对上述方法制造的半导体器件试验产品1-7，每种取20个进行高温存放测试，包括有150℃的500小时，1000小时、1500小时、2000小时、和大于2500小时的试验，175℃的300小时、500小时、1000小时和大于1500小时的试验。
调查因焊线23和引线电极25之间开焊引起的废品率，从中得出的数据列入下表内（见表）
由上表可清楚看到，因开焊引起的排斥现象，其数目随着铜或铜合金与铝所形成的反应层增厚而减少，而且可看到反应层厚度为大于等于0.2（微米）的器件，其高可靠性等同于具有Ni镀层的器件。
对上述半导体器件试验产品1～7进行高温高湿（80℃、90%）长时间的存放流试，同样可发现在反应层厚度大于等于0.2（微米）时，没有废品出现。进而在热冲击试验（-45℃
Figure 85107077_IMG2
150℃，和热疲劳试验中也得到了类似的结果。
如上所述，根据本发明的半导体器及其制造法，可以容易地生产出在高温环境中或高温高湿环境中显示出极好电气性能的高可靠半导体器件。

Claims (12)

1、半导体器件30，包括有：安装在引线框架20的焊接区上的半导体芯片22，该引线框架材料选自一组包括铜和铜合金的材料，在所述引线框架20上形成的引线电极25;一端连接于所述半导体芯片焊接区24，另一端连接于所述引线电极25的焊线23;以及密封所述半导体芯片22、所述焊接区24和所述焊线23的树脂密封材料26，其密封方式使所述引线框架20的一部分及所述引线电极25的一部分通向外部，其特征在于，所述焊线23由铝构成，在焊线23与所述引线电极25所连接的部分上，反应层60厚度大于等于0.2（微米）。
2、半导体器件30制造法，包括一个步骤，焊线23的一端连接于半导体芯片22的焊接区24，半导体芯片22安装在引线框架20上，引线框架20是由一组包括铜和铜合金的材料中选出的材料制成，使焊线23的另一端连接于所述引线框架20的引线电极25，其特征在于，铝制焊线23的另一端焊接在所述焊接区24上，并对该焊接部分进行热处理，使所述铜或铜合金和铝所形成的反应层60厚度大于等于0.2（微米）。
3、按照权利要求2所述半导体器件制造法，其特征在于所述热处理是由加热器部件40，42夹持所述引线电极进行加热的。
4、按照权利要求3所述半导体器件制造法，其特征在于所述加热器的夹持动作是继续进行的。
5、按照权利要求3所述半导体器件制造法，其特征为在所述加热器部件40、42加热过程中，由下方对所述引线框架吹进非氧化气体。
6、按照权利要求2所述半导体器件制造法，其特征在于所述热处理为通过氢气加热炉进行加热。
7、按照权利要求2所述半导体器件制造法，其特征在于所述热处理是用喷灯对远离所述焊接部分的所述引线电极加热而进行的。
8、按照权利要求2所述半导体器件制造法，其特征在于热处理是用电阻焊机加热所述引线电极25。
9、按照权利要求2所述半导体器件制造法，其特征在于热处理是用激光辐射加热所述焊接部分。
10、按照权利要求3所述半导体器件制造法，其特征在于所述加热器部件40、42的夹持状态连续保持一段规定时间。
11、按照权利要求5所述半导体器件制造法，其特征在于非氧化气体是由包括惰性气体和还原气体的一类气体中选择的。
12、按照权利要求11所述半导体器件制造法，其特征在于惰性气体是从包括氮、氩和氦的一类气体中选择的，所述还原气体是氢。
CN85107077A 1984-10-09 1985-09-24 半导体器件及其制造法 Expired CN85107077B (zh)

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EP0178170B1 (en) 1991-01-02
CN85107077A (zh) 1986-10-01
EP0178170A2 (en) 1986-04-16
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US4891333A (en) 1990-01-02
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KR900000439B1 (ko) 1990-01-30

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