CN113557596A - Al接合线 - Google Patents
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Abstract
提供一种Al接合线,其在使用Al接合线的半导体装置工作的高温状态下,充分地得到接合线的接合部的接合可靠性。该Al接合线的特征在于,由Al或Al合金构成,垂直于导线轴的方向的芯材截面中的平均晶粒直径为0.01~50μm,在对于垂直于导线轴的方向的芯材截面测量晶体取向的结果中,导线长度方向的晶体取向之中,相对于导线长度方向角度差为15°以下的晶体取向<111>的取向比率为30~90%。
Description
技术领域
本发明涉及Al接合线。
背景技术
在半导体装置中,通过接合线将形成在半导体元件上的电极与引线框或基板上的电极之间连接。作为接合线中使用的材质,在超LSI等的集成电路半导体装置中使用金(Au)或铜(Cu),另一方面在功率半导体装置中主要使用铝(Al)。例如,专利文献1中示出在功率半导体模块中使用的铝接合线(下面称为“Al接合线”。)的例子。另外,在使用Al接合线的功率半导体装置中,作为接合方法,与半导体元件上电极的连接及与引线框或基板上的电极的连接均使用楔接合。
使用Al接合线的功率半导体装置较多用作空调或太阳能发电系统等的大电力设备、车载用的半导体装置。在这样的半导体装置中,Al接合线的接合部暴露在100~150℃的高温中。在使用仅由高纯度的Al构成的材料作为Al接合线的情况下,在这样的温度环境下导线容易软化,因而难以在高温环境中使用。
专利文献2中公开了一种包含0.02~1重量%的Fe的Al导线。在不包含Fe的Al导线中,使用半导体时的高温会在导线接合界面正上方引起再结晶,形成小的结晶粒,成为产生裂纹的原因。对此,通过含有0.02%以上的Fe从而能够提高再结晶温度。通过拔丝后的退火,将接合前的导线晶体粒径设定为50μm以上。晶体粒径较大,即使半导体使用时的高温也不会再结晶,因此不会发生裂纹。
专利文献3中,作为即使使用时大电流反复通电也会抑制产生在连接部的裂纹发展并实现可靠性高的连接部的接合线,公开了线材为Al-0.1~1wt%X,X是从Cu、Fe、Mn、Mg、Co、Li、Pd、Ag、Hf中选择的至少一种金属,线的粗细(直径)为50~500μm的接合线。
[现有技术文献]
[专利文献]
专利文献1:日本特开2002-314038号公报
专利文献2:日本特开平8-8288号公报
专利文献3:日本特开2008-311383号公报
发明内容
[发明要解决的技术问题]
在使用了使用纯Al的Al接合线、或者使用如专利文献2、3记载的那样的Al合金的Al接合线的任一者的半导体装置中,在半导体装置工作的高温状态下,有时不能充分地得到接合线的接合部的接合可靠性。
本发明的目的在于提供一种Al接合线,其在使用Al接合线的半导体装置工作的高温状态下,充分地得到接合线的接合部的接合可靠性。
[用于解决技术问题的技术手段]
即,以如下述内容作为本发明的宗旨。
[1]一种Al接合线,其特征在于,由Al或Al合金构成,垂直于导线轴的方向的芯材截面中的平均晶粒直径为0.01~50μm,在对于垂直于导线轴的方向的芯材截面测量晶体取向的结果中,导线长度方向的晶体取向之中,相对于导线长度方向角度差为15°以下的晶体取向<111>的取向比率为30~90%。
[2]如[1]所述的Al接合线,其特征在于,导线的硬度以Hv计为20~40。
[3]如[1]或[2]所述的Al接合线,其特征在于,导线线径为50~600μm。
[发明效果]
根据本发明,在使用Al接合线的半导体装置工作的高温状态下,充分地确保接合线的接合部的接合可靠性。
具体实施方式
明确了如下情况:即使是使用由纯Al、或者如专利文献2、3所述的那样的Al合金构成的Al接合线的半导体装置,若使半导体装置在高温状态下长时间工作,则会出现接合线的接合部的接合强度降低的现象,即不能充分地获得接合可靠性。如果观察高温长时间工作后的半导体装置的接合线截面,则可推断由于高温环境引起再结晶,晶体粒径变大,而且后述的结晶<111>取向比率减少,因此导线强度相比于初期降低,由此在接合界面发生剥离现象,接合部的可靠性降低。
对此,在本发明中,在Al接合线中,不论纯Al还是Al合金,均将垂直于导线轴的方向的芯材截面中的平均晶粒直径设定为0.01~50μm,在对垂直于导线轴的方向的芯材截面测量晶体取向的结果中,导线长度方向的晶体取向之中,相对于导线长度方向角度差为15°以下的晶体取向<111>的取向比率(下面简称为“结晶<111>取向比率”)为30~90%。由此,即使是在高温环境下长时间持续使用半导体装置时,在高温长时间工作后的半导体装置中也能够确保接合部的可靠性。下面,详细地进行说明。
针对高温长时间经历后的接合部可靠性评价试验进行说明。
作为使用的Al接合线,使用包含0.5质量%的Fe的Al合金及纯Al的Al接合线。拔丝后的导线线径为200μm。在拔丝工序的过程中实施或不实施热处理,在实施热处理的情况下将冷却条件设定为缓慢冷却和骤冷两种,对拔丝后的导线实施调质热处理,将接合线的维氏硬度调整为Hv40以下。通过改变拔丝过程中的热处理条件与拔丝后的调质热处理条件,对导线的晶体粒径和结晶<111>取向比率进行多种变更。
在半导体装置中,半导体芯片与接合线之间的第一接合部、外部端子与接合线之间的第二接合部均为楔形焊接。
高温长时间经历是通过功率循环试验进行的。功率循环试验针对接合有Al接合线的半导体装置,反复进行加热和冷却。加热是花费2秒钟加热至半导体装置中的接合线的接合部的温度变为140℃,其后,花费5秒钟冷却至接合部的温度变为30℃。重复该加热、冷却的循环20万次。
上述高温长时间经历后,测量第一接合部的接合剪切强度,进行接合部可靠性的评价。其结果,在导线的晶体粒径为0.01~50μm,结晶<111>取向比率为30~90%时(本发明条件),Al合金和纯Al的任一者,均为接合部剪切强度与初期相比为90%以上,可以充分地确保接合部的可靠性。对此,在脱离上述本发明条件的情况下,接合部剪切强度与初期相比为小于50%,接合部的可靠性不充分。
《导线的平均晶粒直径》
在本发明中,垂直于接合线的导线轴的方向的芯材截面(垂直于导线轴的方向的截面;垂直于导线长度方向的截面(C截面))中的平均晶粒直径为0.01~50μm。作为平均晶粒直径的测量方法,使用EBSD(Electron Back Scatter Diffraction Patterns:电子背散射衍射)等测量方法求得各晶粒的面积,采用将各晶粒的面积视为圆时的直径的平均。
如果平均晶粒直径为0.01μm以上,则适当进行通过拔丝时的调质热处理进行的再结晶,导线会软化,能够防止接合时的芯片断裂的发生、接合部的接合性降低、高温长时间使用时的可靠性降低等。另一方面,如果平均晶粒直径超过50μm,则表现出过度进行导线的再结晶,引起高温长时间使用时的可靠性降低。通过在导线拔丝的过程中进行调质热处理,能够将导线的C截面中的平均晶粒直径设定为0.01~50μm。平均晶粒直径优选为0.05μm以上,较优选为0.1μm以上。平均晶粒直径还优选为20μm以下,较优选10μm以下。
《导线的结晶<111>取向比率》
在本发明中,在对于垂直于导线轴的方向的芯材截面测量晶体取向的结果中,导线长度方向上的晶体取向之中,相对于导线长度方向角度差为15°以下的晶体取向<111>的取向比率(结晶<111>取向比率)为30~90%。在此,所谓垂直于导线轴的方向的芯材截面,表示的是垂直于接合线长度方向的截面(C截面)。结晶<111>取向比率的测量中可以使用EBSD。通过将垂直于导线轴的方向的芯材截面(垂直于导线轴的方向的截面;垂直于接合线长度方向的截面)作为检查面,利用附属于装置的解析软件,能够计算结晶<111>取向比率。关于该取向比率的计算方法,仅将以测量区域内的可信度为基准确定的晶体取向的面积作为总体,算出<111>取向的面积比例,作为结晶<111>取向比率。在求得取向比率的过程中,将无法测量晶体取向的部位、或者即使能进行测量但取向解析的可信度低的部位等排除进行计算。
如果结晶<111>取向比率为90%以下,则适当进行基于拔丝时的调质热处理的再结晶,导线会软化,能够防止接合时的芯片断裂发生、接合部的接合性降低、高温长时间使用时的可靠性降低等。另一方面,如果结晶<111>取向比率小于30%,则表示过度地进行了导线的再结晶,接合部的可靠性降低,高温长时间使用时的可靠性降低。通过在导线拔丝的过程中进行热处理,热处理后进行骤冷,从而与拔丝后的调质热处理相配合,能够将垂直于导线长度方向的截面中的结晶<111>取向比率设定为30~90%。结晶<111>取向比率优选为60%以上,较优选为70%以上。结晶<111>取向比率还优选为85%以下,较优选为80%以下。
《导线的维氏硬度》
在本发明中,优选地,在垂直于接合线的导线长度方向的截面(C截面)中,维氏硬度为Hv20~40的范围。通过设定为Hv40以下,从而接合时不会发生芯片断裂,实现良好的接合性,并且可以容易地形成线弧以进行对半导体装置的布线。另一方面,维氏硬度降低至小于Hv20时,表示过度地进行了导线的再结晶,即使通过时效热处理形成析出物也难以得到充分的强度,接合部的可靠性可能会降低。因此,维氏硬度的下限优选设定为Hv20。如前所述,在导线制造的过程中进行热处理,并且在拔丝的过程中进行调质热处理,由此能够将导线的维氏硬度设定为Hv20~40的范围。
《导线直径》
本发明中,优选接合线直径为50~600μm。功率类器件中流动大电流,因而一般使用50μm以上的导线,但由于达到600μm以上时变得难以操作或者导线接合机不对应,因此使用600μm以下的导线。
《导线组分》
本发明的Al接合线无论是纯Al还是Al合金,都能够应用。作为Al合金,可以将Fe、Si等作为添加元素,例如举出Al-Fe合金、Al-Si合金,Al含量优选为95质量%以上,96质量%以上,97质量%以上,98质量%以上或者98.5质量%以上。作为Al合金的优选示例,可举出Al-0.5质量%Fe合金,Al-1质量%Si合金。
《接合线的制造方法》
本发明的接合线是在得到包含预定组分的Al合金的基础上,除常规方法的轧制和拔丝加工之外,通过在拔丝过程中进行热处理而制造的。
在拔丝的过程中,进行热处理和其后的骤冷处理。热处理可以在导线直径为1mm左右的阶段进行。拔丝中热处理条件优选设定为600~640℃、2~3小时。热处理后的骤冷处理在水中骤冷。若不进行热处理,则在下述调质热处理后结晶<111>取向比率会脱离上限。另外,在即使进行热处理而将冷却条件设为缓慢冷却的情况、或者热处理温度过高的情况下,在下述调质热处理后结晶<111>取向比率会脱离下限。
在拔丝加工中和拔丝加工后的一者或两者,进行调质热处理。提高调质热处理的温度,时间越长,平均晶粒直径增大,能够降低结晶<111>取向比率,降低维氏硬度。在热处理温度250~350℃的范围、热处理时间5~15秒的范围中,为了实现优选的平均晶粒直径、结晶<111>取向比率、维氏硬度的方式,可以选择调质热处理条件。
[实施例]
《实施例1》
准备包含0.5质量%的Fe的Al合金,将该合金制成铸锭,对铸锭槽辊轧制,并进行拔丝加工。在导线直径为800μm的阶段进行热处理。其后,将最终线径设为表1所示的线径进行模具拔丝加工,在拔丝加工结束后进行调质热处理。拔丝过程中的热处理条件是将标准条件设定为620℃、3小时、骤冷(水冷却),一部分不进行热处理(比较例3),将冷却条件设定为缓慢冷却(空气冷却)(比较例4)。另外,拔丝后的调质热处理条件是将标准条件设定为270±10℃的范围、10秒,将一部分设定为比标准低的温度(比较例1)、比标准高的温度(比较例2)。在本发明例1~9中,使调质热处理的温度在标准条件之中变化。
使用该导线,在垂直于导线轴的方向的芯材截面(C截面)中,进行平均晶粒直径、相对于导线长度方向角度差为15°以下的晶体取向<111>的取向比率(结晶<111>取向比率)、维氏硬度的测量。
平均晶粒直径的测量中,使用EBSD法求得各晶粒的面积,将各晶粒的面积换算为圆的面积,作为其直径的平均从而进行。
结晶<111>取向比率的测量中,通过在垂直于导线轴的方向的芯材截面(垂直于接合线长度方向的截面)中进行基于EBSD的测量,利用附属于装置的解析软件,从而以前述的步骤计算结晶<111>取向比率。
维氏硬度的测量中,使用显微维氏硬度计,作为C截面中半径方向上的中心位置的硬度,进行测量。
在半导体装置中,半导体芯片电极为Al-Cu,外部端子使用Ag。半导体芯片电极与接合线之间的第一接合部、外部端子与接合线之间的第二接合部均为楔形焊接。
针对半导体装置中的接合线的接合性,根据第一接合部在初期(高温长时间经历前)有无接合不良(不贴合)进行判断。将已接合的认定为○,将没有接合的认定为×,记入表1的“接合性”栏中。
关于半导体装置的芯片裂纹评价,用酸溶解焊盘表面的金属,用显微镜观察焊盘下的有无芯片裂纹,进行评价。将无裂纹认定为○,将有裂纹认定为×,记入表1的“芯片裂纹”栏中。
高温长时间经历是通过功率循环试验进行的。功率循环试验针对接合有Al接合线的半导体装置,反复进行加热和冷却。加热是加热2秒钟至半导体装置中的接合线的接合部的温度变为140℃,其后,冷却5秒钟至接合部的温度变为30℃。将该加热、冷却的循环重复20万次。
经过上述高温长时间后,测量第一接合部的接合剪切强度,进行接合部可靠性的评价。剪切强度测量是与初期的接合部的剪切强度进行比较而进行的。将初期的接合强度的95%以上认定为◎,将90%~95%认定为○,将70%~90%认定为△,将小于70%认定为×,记载在表1的“可靠性试验”栏中。×为不合格。
[表1]
在表1中示出结果。对脱离本发明的范围的数值标注下划线。
本发明例No.1~9均为导线的平均晶粒直径及结晶<111>取向比率在本发明的范围内,导线的硬度良好,接合性、芯片裂纹、可靠性试验均良好。如前所述,在本发明例1~9中,使调质热处理的温度在标准条件中变化。在相同线直径中,调质热处理温度在标准条件中越高,具有晶体粒径变大、结晶<111>取向比率减小的倾向。特别地,本发明例No.1、4、7中,晶体粒径、晶体取向为最优选的范围,可靠性试验的结果为特别良好(◎)。
比较例No.1~4为比较例。
比较例No.1,调质热处理条件相比于标准条件为低温,平均晶粒直径低而在范围外,结晶<111>取向比率高而在范围外,硬度高于优选条件,接合性、芯片裂纹、可靠性试验均不良。
比较例No.2,调质热处理条件相比于标准条件为高温,平均晶粒直径超过上限,结晶<111>取向比率低而为范围外,硬度低于优选条件,可靠性试验不良。
比较例No.3,不进行拔丝中热处理,平均晶粒直径为本发明的范围内,但结晶<111>取向比率高而在范围外,硬度高于优选条件,可靠性试验不良。
比较例No.4,将拔丝中热处理的冷却设定为缓慢冷却,平均晶粒直径为本发明的范围内,但结晶<111>取向比率低而在范围外,可靠性试验不良。
《实施例2》
制造了具有表2所示的导线组分,线径为200μm的Al接合线。制造条件及评价项目与前述实施例1是同样的。在表2中示出结果。
[表2]
由表2可以明确,任一导线组分均能得到本发明的导线组织,能够实现良好的导线品质。
Claims (3)
1.一种Al接合线,其特征在于,
由Al或Al合金构成,垂直于导线轴的方向的截面中的平均晶粒直径为0.01~50μm,在对于垂直于导线轴的方向的截面测量晶体取向的结果中,导线长度方向的晶体取向之中,相对于导线长度方向角度差为15°以下的晶体取向<111>的取向比率为30~90%。
2.根据权利要求1所述的Al接合线,其特征在于,
导线的硬度以Hv计为20~40。
3.根据权利要求1或2所述的Al接合线,其特征在于,
导线线径为50~600μm。
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