JP2008311383A - ボンディングワイヤ、それを使用したボンディング方法及び半導体装置並びに接続部構造 - Google Patents

ボンディングワイヤ、それを使用したボンディング方法及び半導体装置並びに接続部構造 Download PDF

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JP2008311383A
JP2008311383A JP2007157015A JP2007157015A JP2008311383A JP 2008311383 A JP2008311383 A JP 2008311383A JP 2007157015 A JP2007157015 A JP 2007157015A JP 2007157015 A JP2007157015 A JP 2007157015A JP 2008311383 A JP2008311383 A JP 2008311383A
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wire
bonding
bonding wire
layer
metal
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Hitoshi Onuki
仁 大貫
Masaru Tashiro
優 田代
Minoru Ichimura
稔 市村
Makoto Takeda
誠 武田
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Ibaraki University NUC
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Ibaraki University NUC
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Priority to JP2007157015A priority Critical patent/JP2008311383A/ja
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Abstract

【課題】使用時の大電流繰り返し通電によっても接続部に発生したクラックの進行を抑制して信頼性の高い接続部を実現するボンディングワイヤ及びボンディング方法を提供する。
【解決手段】ボンディングワイヤは、線材がＡｌ−０．１〜１ｗｔ％Ｘで、ＸがＣｕ、Ｆｅ、Ｍｎ、Ｍｇ、Ｃｏ、Ｌｉ、Ｐｄ、Ａｇ、Ｈｆから選ばれた少なくとも一種類の金属であり、線の太さが断面を円形にしたときの直径が５０〜５００μｍである点を特徴とする。このボンディングワイヤによってＡｌを主成分とする電極と接続したとき微細粒層とマトリックスとの界面にＡｌとＸの金属間化合物が存在する接続部構造を得る。
【選択図】図６

Description

本発明は高信頼性のボンディング接続部を実現するボンディングワイヤ、それを使用したボンディング方法及び半導体装置並びに接続部構造に関する。
半導体基板表面の電極とリードフレーム又は配線基板との間の電気的接続にボンディングワイヤを用いた超音波接続技術が広く使用されている。高密度集積回路装置の場合は通電容量が小さくワイヤが極細であり、使用環境が室温であることが殆どであってヒートサイクル試験が低温で行われることから、信頼性の高い接着部を実現できていた。これに対し、パワー半導体モジュールの場合には通電容量が大きくワイヤが直径数１０ミクロンから数１００ミクロンと太くなり、使用環境も車両のエンジンルーム内、外気と略同じ環境の工場内と苛酷な用途が多くヒートサイクル試験も高温で行われ、信頼性の高い接続部を実現するために研究、開発が進められている。
環境対応ハイブリッド車の燃費向上及びコスト低減には、モータ制御に用いられるインバータ用ＩＧＢＴモジュールの動作温度を高めることが極めて有効である。最高動作温度を現状の１２０℃から２００℃に高めることが実現できれば、冷却装置を水冷方式から空冷方式に変更が可能になり、大幅な軽量化が期待できる。ＩＧＢＴモジュールの２００℃動作の実現に際して、半導体自体には基本的に障害はなく、インバータを構成するＭＯＳ型パワーデバイスのアルミニウムワイヤ（以下Ａｌワイヤと称す）接続部の劣化が懸念される。これは、ＡｌワイヤとＳｉチップの熱膨張係数の違いに基づき、冷却過程で発生する引張り応力を駆動力とするワイヤボンディング部直上のＡｌワイヤの微細粒界でのクラックの進展によるものと考えられる。
本発明者は、平均結晶粒のワイヤ直径に対する比が０．２〜０．６の範囲でかつワイヤの硬さが１８〜３０Ｈｖの範囲にある直径２００〜６００μｍの大電流通電用Ａｌ合金ワイヤを提案した（特許文献１）。
特許文献１に開示されたＡｌ合金ワイヤにより、使用時の大電流繰り返し通電によって接続部に発生したクラックの進行を抑制し、接続部の信頼性向上が図れる。
特開平７−３０２８１１号
しかしながら、特許文献１に開示されたＡｌ合金ワイヤにおいても、最高動作温度が高くなるに従い使用時の大電流繰り返し通電によって接続部に発生したクラックの進行を抑制することが充分でないという問題がある。
本発明の目的は高信頼性のボンディング接続部を実現するボンディングワイヤを提供することにある。具体的には、使用時の大電流繰り返し通電によっても接続部に発生したクラックの進行を抑制して信頼性の高い接続部を実現することにある。
本発明の他の目的は高信頼性のボンディング接続部を実現するボンディングワイヤのボンディング方法を提供することにある。
本発明の更に他の目的は高信頼性のボンディング接続部を実現するボンディングワイヤを使用した半導体装置並びに接続部構造を提供することにある。
本発明ボンディングワイヤの特徴とするところは、線材がＡｌ−０．１〜１ｗｔ％Ｘで、ＸがＣｕ、Ｆｅ、Ｍｎ、Ｍｇ、Ｃｏ、Ｌｉ、Ｐｄ、Ａｇ、Ｈｆから選ばれた少なくとも一種類の金属であり、線の太さが断面を円形にしたときの直径が５０〜５００μｍである点にある。ワイヤの断面形状は円形、矩形、多角形のいずれでもよい。Ｘを０．１〜１ｗｔ％にする理由は、サイクル試験によってせん断強度が初期値の８０％（ｔ８０）以上を確保できる組成範囲であり、本発明の目的を達成する上で不可欠な条件である。図１は横軸にＸの組成を、縦軸にサイクル数をとり、せん断強度の変化を示している。図１によれば、ＡｌにＸを添加するとＡｌＸの析出物が生じせん断強度が急激に向上し、０．１〜１ｗｔ％Ｘの範囲で略同じ高いせん断強度を示し、１ｗｔ％Ｘを超えると徐々にせん断強度が低下することが判る。Ｘの添加量が増加するとせん断強度が低下する理由は、析出物が大きくなりその結果析出物の密度が低下することにあると推測する。ΔＴはサイクル試験時の温度差である。
本発明ボンディング方法の特徴とするところは、線材がＡｌ−０．１〜１ｗｔ％Ｘで、ＸがＣｕ、Ｆｅ、Ｍｎ、Ｍｇ、Ｃｏ、Ｌｉ、Ｐｄ、Ａｇ、Ｈｆから選ばれた少なくとも一種類の金属であり、線の太さが断面を円形にしたときの直径が５０〜５００μｍであるボンディングワイヤをＡｌを主成分とする層に超音波ボンディングした後、１００〜２００℃で１分〜１時間の間時効させる点にある。
本発明接続部構造の特徴とするところは、半導体基板上に形成されたＡｌを主成分とする電極とＡｌ−０．１〜１ｗｔ％Ｘで、ＸがＣｕ、Ｆｅ、Ｍｎ、Ｍｇ、Ｃｏ、Ｌｉ、Ｐｄ、Ａｇ、Ｈｆから選ばれた少なくとも一種類の金属からなるボンディングワイヤとの接続部が、微細粒層とマトリックスとの界面にＡｌとＸの金属間化合物が存在する点にある。
本発明半導体装置の特徴とするところは、金属基板、金属基板上に接着され表面にメタライズされた金属の回路層が形成されたセラミックス基板、セラミックス基板上の回路層に接着された半導体基板、半導体基板上に形成されたＡｌを主成分とする電極とセラミックス基板上の回路層の半導体基板から離れた個所を接続するボンディングワイヤを備え、上記ボンディングワイヤは、線材がＡｌ−０．１〜１ｗｔ％Ｘで、ＸがＣｕ、Ｆｅ、Ｍｎ、Ｍｇ、Ｃｏ、Ｌｉ、Ｐｄ、Ａｇ、Ｈｆから選ばれた少なくとも一種類の金属であり、線の太さが断面を円形にしたときの直径が５０〜５００μｍである点にある。
本発明によれば、線材をＡｌ−０．１〜１ｗｔ％Ｘで、ＸがＣｕ、Ｆｅ、Ｍｎ、Ｍｇ、Ｃｏ、Ｌｉ、Ｐｄ、Ａｇ、Ｈｆから選ばれた少なくとも一種類の金属とし、線の太さを断面を円形にしたときの直径が５０〜５００μｍにすることにより、最高動作温度２００℃になっても使用時の大電流繰り返し通電によって接続部に発生したクラックの進行を抑制することが可能になる。本発明ボンディングワィヤを使用したＩＧＢＴモジュールのような半導体装置は大電流繰り返し通電によって生じる過酷な環境においても高信頼性を保持できる。
本発明Ａｌ−０．１〜１ｗｔ％Ｘボンディングワイヤは、超音波ボンディング技術によって接続することにより、最高動作温度が２００℃になっても大電流繰り返し通電によって接続部に発生したクラックの進行を抑制する接続部構造を実現できることから、インバータ用ＩＧＢＴモジュールのようなパワーモジュールに適用すると本発明ボンディングワイヤの効果を発揮する。
表１に示す種々の組成を持つＡｌ合金溶製のため、９９．９９ｗｔ％（４Ｎ）高純度アルミニウム約３００ｇと高純度銅を相当分量秤量後混合して、溶解用黒鉛坩堝に装入し、抵抗加熱電気炉で大気中７００〜７５０℃加熱溶解、溶湯攪拌後、内径２５mmφ、深さ１５０mmの円筒金型に鋳造し、同上サイズの円柱状インゴットを作成した。鋳塊上部には引け巣や収縮孔があり、この部分に溶湯アルミニウム酸化物の巻き込みが懸念されるので、この部分を切断除去した。また、鋳塊外部表面部には全体に局部的な収縮しわなどが発生するので、これを旋盤で切削除去し、外部目視観察の状態でいわゆる鋳造欠陥や汚れなどの無い完全な円柱試料を作製した。次に、鍛造＋線引き加工処理工程は、円柱試料を洗浄、表面研磨、溝圧延、表面研磨、線引き加工、洗浄巻き取りを行い、直径３００μｍのボンディングワイヤを 作製した。線引き加工後のワイヤを、不活性アルゴン（Ａｒ）ガス雰囲気炉で３００℃、３０分焼鈍後徐冷して、線引きの加工ひずみを除去し、ボンディング適応レベルに軟化させた。Ｎｏ．１〜９は本発明のボンディングワイヤ、Ｎｏ．１０は比較材としての従来のボンディングワイヤである。Ｎｏ．１に示す組成のＡｌ−０．５ｗｔ％Ｃｕボンディングワイヤの引張り強度及びせん断強度を測定した結果を図２、図３及び図４に示す。同図に現在市販されているＮｏ．１０に示すＡｌ−０．００４ｗｔ％Ｎｉボンディングワイヤの引張り強度及びせん断強度を比較例として示した。
Figure 2008311383
図２はＡｌ−０．００４ｗｔ％ＮｉワイヤおよびＡｌ−０．５ｗｔ％Ｃｕワイヤボンディング部のネック部の引っ張り強度を２５０℃に０〜１０６９時間保持した後測定し、保持試験時間に対し、プロットした（加速寿命試験の）結果を示している。ここで保持試験時間の０ｈはボンディング後のネック部の引っ張り強度に対応している。また、温度加速の活性化エネルギーを０．６ｅＶとして１５０℃における等価時間も図に示してある。本発明ボンディングワイヤのネック部の強度は試験開始から２１４時間（１５０℃における等価時間２年）までは引張り強度が低下するが、それ以降は低下せず、等価時間１０年経過後も０．５５ｋｇｆ以上の引張り強度を維持している。これに対し、比較例のボンディングワイヤのそれは試験開始時に０．４７ｋｇｆ未満の引張り強度を有していたものが、試験時間の経過と共に引張り強度が低下していることが判る。すなわち、比較例のボンディングワイヤの初期引っ張り強度よりも本発明のボンディングワイヤの１０年経過後のそれは高く、信頼性が高いことを示している。
図３は中温（７０〜１２０℃）領域において加熱と冷却を繰り返すヒートサイクル試験、図４は高温（１５０〜２００℃）領域において加熱と冷却を繰り返すヒートサイクル試験の結果を、横軸にサイクル数（回）、縦軸にせん断強度（ｋｇｆ）をとって示している。図から判るように、中温領域のサイクル試験では、本発明ボンディングワイヤは試験開始からせん断強度が次第に低下して１８０００（回）時点で１．１５（ｋｇｆ）になるが、比較例のボンディングワイヤでは試験開始から３０００（回）時点までに急激に低下し、その後は微減し１８０００（回）時点で１．０２５（ｋｇｆ）まで低下している。また、高温領域のサイクル試験では、両ボンディングワイヤとも試験開始から２００（回）時点まで急激に低下し、その後は微減し１０００（回）時点で本発明ボンディングワイヤのせん断強度は１．１０（ｋｇｆ）、比較例のボンディングワイヤのそれは１．１０（ｋｇｆ）１．０２５（ｋｇｆ）になっていて、中温領域のサイクル試験の結果と略同じ傾向を示している。この結果は、本発明ボンディングワイヤが最高使用温度２００℃のＩＧＢＴモジュールに適用できることを示している。
図２〜図４に示す試験結果は、本発明の組成範囲及び他の金属からなるボンディングワイヤにおいても、略同じ傾向を示した。
以上から、本発明ボンディングワイヤは使用時間が長くなっても引張り強度の低下が少なく、中温領域及び高温領域におけるヒートサイクルが加わってもせん断強度の低下が少なく、高い信頼性を保持していることが判る。
本発明Ａｌ−０．１〜１ｗｔ％Ｘボンディングワイヤを用いたボンディング方法について説明する。Ａｌ−０．１〜１ｗｔ％ＸボンディングワイヤをＡｌを主成分とする金属層１１に超音波ボンディングした後、１００〜２００℃で１分〜１時間のあいだ等温で時効処理をする。この時効処理によって、接続部微細構造が図５に示す構造から図６に示す構造に変わる。即ち、超音波ボンディングした直後は図５に示すようにＡｌとＸとの化合物である析出層が基地中に固溶しており、粗大な結晶粒からなるワイヤがＡｌ膜（表面が微細粒になっている）接続した微細構造になっているが、時効処理後は図６に示すように金属層１１に表面側に存在する微結晶１１ａに隣接してＡｌの微細粒層１２が形成され、微細粒層１２の各微細粒にＡｌとＸの金属間化合物粒１３がＡｌワイヤの結晶粒径に微細析出した接続部構造になる。接続部が図５に示す構造になると、金属間化合物粒１３が微細粒層１２とＡｌ−０．１〜１ｗｔ％Ｘボンディングワイヤに連なるＡｌのマトリクス層１４とを結合する働きをして、微細粒層１２とマトリクス層１４との間に発生したクラックの進行を防止する。時効処理をしない場合には、図５示すように微細粒層１２とＡｌ−０．１〜１ｗｔ％Ｘボンディングワイヤに連なるＡｌのマトリクス層１４とを結合する働きをする金属間化合物粒１３が存在しない構造のため、クラックの進行が著しく速くなる。尚、時効工程は超音波ボンディング後であれば、後に続くはんだ付け工程のような熱処理工程で代用してもよい。
図７、図８及び図９は本発明Ａｌ−０．１〜１ｗｔ％Ｘボンディングワイヤを用いた３００Ａ級ＩＧＢＴモジュールの平面図及び断面図を示したものである。
図７は本発明の一実施例であり、１個の３００Ａ級モジュール単位の平面図を示したものである。また、図８は図７のＡ−Ａに沿う断面図、図９は図７のＢ−Ｂ線に沿う断面図である。図において、１０１は放熱板及び支持板として機能する金属基板、１０２は金属基板１０１上に２枚並べてはんだ１０３により固着された例えばＡｌＮからなるセラミックス基板、１０４は各セラミックス基板１０２上に形成した例えばＮｉ／Ｃｕからなる回路層で、回路層１０４は分離された異なる形状を有する３個の部分、即ち、Ｔ字型のコレクタ共通電極となる第１の部分１０４ａ、エミッタ電極となる片状の第２の部分１０４ｂ、ゲート電極となる片状の第３の部分１０４ｃからなり、第１の部分１０４ａが中央部に、第１の部分１０４ａの脚部一側に第２の部分１０４ｂが、他方側に第３の部分１０４ｃが配置されている。第２の部分１０４ｂ及び第３の部分１０４ｃはＮｉ層上にＡｌ層１０５が形成されている。１０６はそのアノード側が回路層１０４の第１の部分１０４ａの脚部上に３個並べてはんだ層１０７を介して接合されたＩＧＢＴチップ、１０８はそのカソード側が第１の部分１０４ａの上辺部上にはんだ層１０９を介して接合されたダイオードチップ、１１０はＩＧＢＴチップ１０６のエミッタ層上に形成したＡｌを主成分とする金属層１１１と第２の部分１０４ｂ上のＡｌ層１０５とを超音波ボンディングによって接続した直径５００μｍＡｌ−０．１〜１ｗｔ％Ｘボンディングワイヤ、１１２はＩＧＢＴチップ１０５のゲート層上に形成したＡｌを主成分とする金属層１１３と第３の部分１０４ｃ上のＡｌ層１０５とを超音波ボンディングによって接続した直径５００μｍＡｌ−０．１〜１ｗｔ％Ｘボンディングワイヤ、１１４はダイオードチップ１０８のアノード層上に形成したＡｌを主成分とする金属層１１５と第２の部分１０４ｂ上のＡｌ層１０５とを超音波ボンディングによって接続したＡｌ−０．１〜１ｗｔ％Ｘボンディングワイヤである。これによって、１枚のセラミックス基板１０２上に３個の並列接続されたＩＧＢＴチップ１０６と１個のダイオードチップ１０８とが逆並列接続された回路要素が形成され、１枚の金属基板１０１上に２個の回路要素が形成される。インバータを構成する場合には、１枚の金属基板１０１上の２個の回路要素を直列接続し、これを３個並列接続して、各回路要素の接続点を交流出力端子に、並列接続点を直流入力端子にすればよい。電流容量を増やすときはＩＧＢＴチップ１０６及びダイオードチップ１０８の並列接続数を増やし、高電圧化するときはＩＧＢＴチップ１０６及びダイオードチップ１０８の直列接続数を増やせばよい。
本発明ボンディングワイヤはＩＧＢＴモジュールに限らず一般のパワーモジュール、パワーＭＯＳトランジスタ、ダイオードモジュールなどに使用できる。
サイクル試験におけるＡｌ中のＸの組成とせん断強度の関係を示す図である。 加速寿命試験における試験時間と引張り強度の関係を示す図である。 ７０〜１２０℃ヒートサイクル試験におけるサイクル数と劣化率の関係を示す図である。 １５０〜２００℃ヒートサイクル試験におけるサイクル数と劣化率の関係を示す図である。 超音波ボンディングした直後の接続部の断面構造図である。 超音波ボンディングした後に時効処理をした接続部の断面構造図である。 本発明Ａｌ−０．１〜１ｗｔ％Ｘボンディングワイヤを使用したＩＧＢＴモジュールの平面図である。 第７図のＡ−Ａ線に沿う断面図である。 第７図のＢ−Ｂに沿う断面図である。
符号の説明
１１…金属層、１２…微細粒層、１３…金属間化合物粒、１４…マトリクス層。

Claims (4)

  1. 線材がＡｌ−０．１〜１ｗｔ％Ｘで、ＸがＣｕ、Ｆｅ、Ｍｎ、Ｍｇ、Ｃｏ、Ｌｉ、Ｐｄ、Ａｇ、Ｈｆから選ばれた少なくとも一種類の金属であり、線の太さが円形にしたときの直径が５０〜５００μｍであることを特徴とするボンディングワイヤ。
  2. 線材がＡｌ−０．１〜１ｗｔ％Ｘで、ＸがＣｕ、Ｆｅ、Ｍｎ、Ｍｇ、Ｃｏ、Ｌｉ、Ｐｄ、Ａｇ、Ｈｆから選ばれた少なくとも一種類の金属であり、線の太さが断面を円形にしたときの直径が５０〜５００μｍであるボンディングワイヤをＡｌを主成分とする層に超音波ボンディングした後、１００〜２００℃で１分〜１時間の間時効させることを特徴とするボンディング方法。
  3. 半導体基板上に形成されたＡｌを主成分とする電極とＡｌ−０．１〜１ｗｔ％Ｘで、ＸがＣｕ、Ｆｅ、Ｍｎ、Ｍｇ、Ｃｏ、Ｌｉ、Ｐｄ、Ａｇ、Ｈｆから選ばれた少なくとも一種類の金属からなるボンディングワイヤとの接続部が、微細粒層とマトリックスとの界面にＡｌとＸの金属間化合物が存在することを特徴とする接続部構造。
  4. 金属基板、金属基板上に接着され表面にメタライズされた金属の回路層が形成されたセラミックス基板、セラミックス基板上の回路層に接着された半導体基板、半導体基板上に形成されたＡｌを主成分とする電極とセラミックス基板上の回路層の半導体基板から離れた個所を接続するボンディングワイヤを備え、上記ボンディングワイヤは、線材がＡｌ−０．１〜１ｗｔ％Ｘで、ＸがＣｕ、Ｆｅ、Ｍｎ、Ｍｇ、Ｃｏ、Ｌｉ、Ｐｄ、Ａｇ、Ｈｆから選ばれた少なくとも一種類の金属であり、線の太さが円形にしたときの直径が５０〜５００μｍであることを特徴とする半導体装置。
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WO2013180300A1 (ja) * 2012-05-29 2013-12-05 国立大学法人茨城大学 パワー半導体用アルミニウムワイヤ及び該アルミニウムワイヤを用いた半導体装置、並びに該アルミニウムワイヤの探索方法
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US9748186B2 (en) 2013-04-25 2017-08-29 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
DE112017001788T5 (de) 2016-03-30 2018-12-13 Mitsubishi Electric Corporation Halbleitereinheit, Verfahren zur Herstellung derselben und Leistungswandler
JP2020059886A (ja) * 2018-10-10 2020-04-16 日鉄マイクロメタル株式会社 Ａｌボンディングワイヤ
WO2020184655A1 (ja) 2019-03-13 2020-09-17 日鉄マイクロメタル株式会社 Ａｌボンディングワイヤ
WO2021192121A1 (ja) 2020-03-25 2021-09-30 日鉄マイクロメタル株式会社 Ａｌボンディングワイヤ
WO2022168787A1 (ja) * 2021-02-05 2022-08-11 日鉄マイクロメタル株式会社 半導体装置用Ａｌボンディングワイヤ
WO2022168789A1 (ja) * 2021-02-05 2022-08-11 日鉄マイクロメタル株式会社 Ａｌ配線材

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CN102034776A (zh) * 2009-09-30 2011-04-27 英飞凌科技股份有限公司 接合线与半导体芯片之间具有接合连接的功率半导体装置
CN102034776B (zh) * 2009-09-30 2015-06-03 英飞凌科技股份有限公司 接合线与半导体芯片之间具有接合连接的功率半导体装置
EP2530710A2 (en) 2011-06-03 2012-12-05 Nippon Piston Ring Co., Ltd. Bonding wire, connection structure, semiconductor device and manufacturing method of same
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CN103276255A (zh) * 2012-06-13 2013-09-04 田中电子工业株式会社 用于连接至半导体装置的铝合金线
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JP5159000B1 (ja) * 2012-06-13 2013-03-06 田中電子工業株式会社 半導体装置接続用アルミニウム合金細線
EP2738805A1 (en) 2012-11-30 2014-06-04 Nippon Piston Ring Co., Ltd. Aluminium bonding wire, connection structure, semiconductor device and manufacturing method of same
JP5281191B1 (ja) * 2012-12-28 2013-09-04 田中電子工業株式会社 パワ−半導体装置用アルミニウム合金細線
US9748186B2 (en) 2013-04-25 2017-08-29 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
KR20140135105A (ko) * 2013-05-15 2014-11-25 타나카 덴시 코오교오 카부시키가이샤 내식성 알루미늄 합금 본딩 와이어
CN104164591A (zh) * 2013-05-15 2014-11-26 田中电子工业株式会社 耐腐蚀性铝合金接合线
JP2014224283A (ja) * 2013-05-15 2014-12-04 田中電子工業株式会社 耐食性アルミニウム合金ボンディングワイヤ
KR101588522B1 (ko) 2013-05-15 2016-01-25 타나카 덴시 코오교오 카부시키가이샤 내식성 알루미늄 합금 본딩 와이어
DE112017001788T5 (de) 2016-03-30 2018-12-13 Mitsubishi Electric Corporation Halbleitereinheit, Verfahren zur Herstellung derselben und Leistungswandler
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