CN116848623A - 功率半导体用铝接合线 - Google Patents

功率半导体用铝接合线 Download PDF

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Publication number
CN116848623A
CN116848623A CN202280011513.5A CN202280011513A CN116848623A CN 116848623 A CN116848623 A CN 116848623A CN 202280011513 A CN202280011513 A CN 202280011513A CN 116848623 A CN116848623 A CN 116848623A
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CN
China
Prior art keywords
wire
aluminum
mass
aluminum wire
aluminum alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280011513.5A
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English (en)
Inventor
三苫修一
市川司
浦地刚史
柳本辰则
中岛泰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Mitsubishi Electric Corp
Original Assignee
Tanaka Denshi Kogyo KK
Mitsubishi Electric Corp
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Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK, Mitsubishi Electric Corp filed Critical Tanaka Denshi Kogyo KK
Publication of CN116848623A publication Critical patent/CN116848623A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • H—ELECTRICITY
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0211—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in cutting
    • B23K35/0216—Rods, electrodes, wires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/28—Selection of soldering or welding materials proper with the principal constituent melting at less than 950 degrees C
    • B23K35/286—Al as the principal constituent
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    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/002—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working by rapid cooling or quenching; cooling agents used therefor
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
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Abstract

本发明提供一种铝线，其在功率半导体用的接合线接合时，线不会从楔形工具偏离，且可在功率循环试验中实现长寿命。本发明的铝线由铝纯度99质量％以上的铝合金构成，相对于铝合金中所有元素的总量，以总计0.01质量％以上1质量％以下含有铁及硅，铝线中与线轴垂直的方向的横剖面中，(111)的取向指数为1以上，且(200)的取向指数为1以下，析出粒子的面积率的范围为0.02％以上2％以下。

Description

功率半导体用铝接合线
技术领域
本发明关于功率半导体用的铝接合线(以下称为“铝线”)。
背景技术
一般而言“半导体”是主要功能为“运算”及“储存”等的CPU(中央运算处理装置)及内存等的统称。半导体用于例如PC(个人计算机)、智能型手机及电视等民用设备。另一方面，功率半导体则用于马达的驱动、电池的充电，进一步则用于供电以使微电脑及LSI(大规模集成电路)运作。功率半导体主要用于改变电压、频率的情况以及电力转换(将直流转换为交流或将交流转换为直流)等。作为功率半导体，包含功率晶体管等。“功率模块”大多是指将用以供电的电路进行集成而成的零件，该电路通常将含功率半导体的多种IC(集成电路)组合而构成。功率半导体也称为power semiconductor、功率装置、功率元件、电力用半导体元件等。
空调、冰箱及洗衣机等节省能源(以下也称为“节能”)家电产品所搭载的“变频器”即为生活上利用功率半导体的例子。变频器通过改变频率来控制马达的转速。变频器通过自由地改变马达的转速来减少马达无谓的动作，而对于节能有所贡献。另一方面，未搭载变频器的空调(air conditioner)反复使马达运转、停止来调整室温，因此可能会发生缺乏温度稳定性且耗电量高等问题。变频器的此等运作，可由功率晶体管进行繁琐地使电流交互开闭的“切换(switching)”来实现。
此外，功率半导体除了在节能家电产品以外，也广泛地用于例如电动车或油电混合车等运输领域。运输领域中使用IGBT(绝缘栅双极型晶体管)等发挥电力转换/控制的功能的功率半导体。IGBT由IGBT芯片(功率芯片)与接合线构成，该接合线将功率芯片彼此的芯片之间连接、或将IGBT芯片(功率芯片)与外部电极连接。为了对于功率半导体用的接合线流入大电流，大多使用线径(直径)40μm以上700μm以下的较粗的铝线。
然而，电动车用的功率模块，因为电动车本身在各种地区环境中使用，而会暴露在大范围的温度变化、高湿度、高盐分的环境及振动等严苛的环境。因此对于功率模块的材料要求高电流密度耐性、高温耐久性及高散热性。此外，电动车用的功率模块的使用环境中，除了上述温度变化以外，也会因为电动车的运行而产生加热/冷却的温度循环。电动车在运行时会重复“在停止时不通电、在开始运转时开始通电”这样的循环。其中，因为通电而导致功率芯片变得高温，设于功率芯片表面的电极垫上的铝线也会变得高温。在停止时不通电，铝线及功率芯片因而急冷。因为汽车频繁地长时间反复开始运转、停止，该加热/冷却的温度循环也反复发生，起因于功率芯片与铝线的热膨胀率差而使热应力发生，因此可能会在功率芯片与铝线的接合部或铝线发生金属疲劳。结果很可能发生接合部的剥离、断裂以及产生线裂缝。因此需要一种解决这些问题而具有长期可靠度的铝线。
此外，在目前成为话题的IoT(物联网)等中，功率半导体也日趋重要。随着搭载IoT的家电逐年小型化、薄型化、高密度化，功率半导体进一步迈向小型化、薄型化、高密度化，而功率芯片与铝线的接合空间逐渐变小。因此，就铝线的接合而言，必须有效利用有限的空间。例如，从铝线对于功率芯片的接合(第一接合)到对于外部电极的接合(第二接合)并非同一方向，必须使第一接合后的铝线以规定角度朝向外部电极相隔的间隙弯折以进行接合。因此，对于铝线而言，尤其需要可改变第二接合的线方向(角度)的弯折自由度，铝线的追踪性(trackability)成为非常重要的特性。
例如，在铝线的第一接合(与半导体芯片上的电极的连接)及第二接合(与引线框架及基板上的外部电极的连接)中，使用前端具有将线夹入的夹口(沟部)的楔形工具(也仅称为“工具”)，将线嵌入该夹口，再将线按压于接合处，由此进行接合。使用缺乏横向弯曲的追踪性的铝线时，线无法以预期的角度弯折，线的一部分可能从楔形工具的夹口偏离。若在线的一部分偏离的状态下进行第二接合，在接合位置偏离预定位置而与其他电极接触的情况下，具有发生短路故障的疑虑。此外，在线从工具偏离的状态下，楔形工具的前端可能直接接触元件，可能破坏半导体元件。
此外，要求长期可靠度的线，一般具有强度较大的倾向。强度大表示拉伸强度、屈服强度及硬度等较大，但具有强度越高的线追踪性越差的倾向。因此极难同时克服强度与追踪性这样的相反课题，目前为止并无同时解决两个课题的案例。
以往已知一种技术，其主要是通过调整铝线的合金化成分来提升接合部在高温状态下的可靠度(例如参照专利文献1～4)。然而，这些现有技术并未解决铝线的追踪性这样的课题。
专利文献1所记载的发明如下：“一种半导体装置的超声波接合用铝合金细线，由0.2～2.0质量％的铁(Fe)及剩余部分为纯度99.99质量％以上的铝(Al)构成，其特征为：在该铝合金细线的铝(Al)基质中固溶有0.01％～0.05％的铁(Fe)，且该铝合金细线的剖面中的拉丝基质组织(Wire drawing matrix structure)为数μm等级的均质微细再结晶组织，铁(Fe)/铝(Al)的金属间化合物粒子在该组织的界面及内面同样地结晶化”。专利文献1中记载了通过在调质热处理前追加固溶/急冷处理这样的步骤，以将固溶于铝(Al)基质中的铁(Fe)量提高至650℃的固溶极限0.052％，随后通过以一般冷轧所进行的连续拉丝加工与后续的调质热处理，而可使Al-Fe合金线的结晶粒径微细化，并且通过使Al高纯度化，可在接合时使其呈现动态再结晶，以避免芯片损伤(参照该案说明书的段落0013)。
专利文献2记载的发明如下：“一种用以与半导体元件的铝垫进行超声波接合的铝合金细线，其由铁(Fe)、硅(Si)及剩余部分为高纯度铝(Al)合金构成，该铝合金细线为由0.01～0.2质量％的铁(Fe)、1～20质量ppm的硅(Si)及剩余部分为纯度99.997质量％以上的铝(Al)构成的合金，其中Fe的固溶量为0.01％～0.06％、Fe的析出量为Fe固溶量的7倍以下，且为平均晶粒径为6～12μm的微细组织”。专利文献2中记载了，通过使Fe的析出量与Fe固溶量的比例保持在固定范围，而使再结晶温度稳定化，再通过添加微量的Si而提升强度，结果使热冲击试验结果稳定化(参照该案说明书的段落0012)。
专利文献3记载的发明如下：“由Al或Al合金构成，与线轴垂直的方向的剖面中的平均晶粒径为0.01～50μm，对于与线轴垂直方向的剖面测量晶体取向的结果中，线长边方向的晶体取向之中，相对于线长边方向角度差在15°以下的晶体取向＜111＞的方位比例为30％～90％”。专利文献3中记载了即便在高温环境下长时间持续使用半导体装置，也可在高温长时间运转后的半导体装置中确保接合部的可靠度(参照该案说明书的段落0012)。
专利文献4记载的发明如下：“以质量％计含有0.02％～1％的Fe、进一步以总计0.05％～0.5％含有Mn、Cr中的至少一种以上的元素，剩余部分为Al及无法避免的杂质，其特征为：Fe、Mn、Cr的固溶量总计为0.01％～1％”。专利文献4中记载了：除了含Fe以外，以规定量含有Mn、Cr中的一者或两者，在固溶热处理与之后的急冷处理中使Fe、Mn、Cr的固溶量总计为0.01％～1％，由此提升线的再结晶温度，即便在高温环境下长时间持续使用半导体装置，也可充分抑制接合线进行再结晶，而可防止线的强度降低(参照该案说明书的段落0014)。此外，与接合线长边方向垂直的剖面(C剖面)中，结晶＜111＞方位与线长边方向的角度差在15°以内的结晶的面积比例(＜111＞方位面积率)较佳为30％～90％，通过拉丝时的调质热处理适当进行再结晶而使线软化，可防止接合时发生芯片破裂、接合部的接合性降低等(参照该案说明书的段落0026)。
现有技术文献
专利文献
专利文献1：日本特开2013-258324号公报
专利文献2：日本特开2014-129578号公报
专利文献3：国际公开2020/184655号公报
专利文献4：日本特开2020-059886号公报
发明内容
发明所要解决的问题
本发明的课题在于提供一种铝线，其可追踪在将功率半导体用的功率芯片与外部电极接合时的横向弯曲(不易从楔形工具偏离)，且长期可靠度优良(在功率循环试验中使用寿命长)。
详细说明课题。首先以图说明线的一端从楔形工具的沟部偏离的铝线。图3右侧的影像是线未从楔形工具偏离的正常状态，左侧的影像是将在第二接合时线从楔形工具偏离的楔形工具部放大的影像。如上所述，楔形工具在其前端具有夹入线的夹口与引导线的引导孔，线通过引导孔嵌入夹口，并于此处被按压而接合于接合部。图3的右侧影像中，线在图中通过楔形工具前端左侧的引导孔而正确地嵌入工具的夹口。左侧影像中，在第一接合后经延伸的铝线虽通过左侧的引导孔，但可发现铝线的前端从工具的夹口往图中的斜下方突出。因此，第二接合无法顺利进行，在连续接合中的后述切线步骤中，右侧的裁刀无法如预先设定那样正确地裁切铝线的前端部。
图4是以倍率75倍观察铝线的接合部分的影像。左侧的影像为比较例(异常)，右侧为实施例(正常)，上方表示第一接合部，下方表示第二接合部。各接合2组。图4的右上下的影像中，线的接合部分(图式中，线相对变粗之处)在线宽方向上同样地被按压，图4上方影像的线的切断部(线的前端)也与线的轴向垂直而正确地被切除。相对于此，若铝线在如图3左侧影像从工具的夹口部突出的状态下进行第二接合，则发生局部接触，如图4的左下影像所示，线的接合部分(图式中线相对变粗之处)在线弯折内侧具有接触痕之处即为局部接触的部分。在局部接触之处铝线变薄，即使能够以此状态进行接合，接合强度也变弱，在使用中剥离的可能性变高。例如，图4左上的影像是将局部接触的线进行后续第一接合的影像，图式上方，线的前端被斜向切除。这是因为在先前的第二接合中(参照图4的左下影像)发生工具偏离的状态下裁切铝线，因而导致斜向切除。最糟的情况，如图4左上的“第一接合部”的影像中线的右侧具有接合痕(基板损伤)，而在第一接合部发生线未附着(未发生线未附着的情况如图4右上所示，存在2条第一接合部)。此外，若铝线在从楔形工具部突出的状态下接地至芯片上的电极垫，具有因为楔形工具部直接接触电极垫而引发芯片破裂的疑虑。另外，图4的右下影像中，将线的弯折角度设定为45度以进行接合，其可毫无问题地进行接合。然而，左下影像中，虽仅使线的弯折角度为30度左右而平缓地使其弯曲，但线的追踪性不佳而发生局部接触。
此外，如上所述，将铝线用于电动车等所搭载的IGBT与电极的接合时，除了高温、高湿、振动等严苛的使用环境以外，也会在路上行驶的过程中频繁地重复停止、运转、停止、运转。伴随于此，频繁地重复停止通电、再次通电、停止通电、再次通电。这对于铝线与电极的接合部及铝线本身的寿命来说是极差的使用条件。即，线在开始通电时急速加热，在停止时急速冷却，而因为反复该急速加热与急速冷却，导致线反复膨胀与收缩，结果因为热应力所导致的接合部剥离、线本身产生裂缝及断裂的危险性提高。特别是铝线与硅芯片的线膨胀系数约相差10倍，容易发生因为线与芯片接合部的热收缩差而造成的剥离。
作为评价铝线接合部长期可靠度的寿命的试验，包含功率循环试验。若功率循环试验中的寿命评价高，则在实际安装于汽车或家电等时也可得到长期可靠度。详细条件如后述，此处简单说明功率循环试验。
功率循环试验是使铝线通电而使已接合了铝线的功率芯片表面温度达到150℃后，停止通电以使其冷却至表面温度达到50℃为止，并重复这样的循环。即，其是重复温差100℃的急速冷却与急速加热的循环，而评价到发生问题为止的动作次数的试验。无问题的动作是指试验开始时功率芯片通电时的芯片正面与背面的电位差的上升率在小于5％的范围以内持续推移的动作。即，通电时功率芯片电极的正面与背面的电位差相对于初始值上升超过5％时，则评价为发生问题，而将此评价为功率循环试验的样本的寿命(循环次数)。
如上所述，目前尚无案例成功开发了同时克服功率循环试验中的长寿命化与线从楔形工具偏离的铝线。
用于解决问题的方案
本案发明人反复详细研究，结果发现通过控制铝线的取向指数与金属间化合物的析出粒子的量，可同时克服功率循环试验的长寿命化与抑制线从楔形工具偏离即线的追踪性这2个课题，而成功发明了达成该课题的铝线。
实施方式的铝线为由铝纯度为99质量％以上的铝合金构成的铝线，其特征为：相对于所述铝合金的总量，以总计0.01质量％以上1质量％以下含有铁及硅，所述铝线中与线轴垂直的方向的横剖面中，(111)的取向指数为1以上，且(200)的取向指数为1以下，析出粒子的面积率为0.02％以上2％以下。
实施方式的铝线中，铝合金较佳为相对于总量以总计0.1质量％以上1质量％以下含有铁及硅，所述析出粒子的面积率为0.1％以上2％以下。
实施方式的铝线中，较佳为进一步以总计50质量ppm以上800质量ppm以下含有镓与钒中的至少一种元素。
实施方式的铝线，以下式(1)所示的残留电阻比较佳为10以上。
残留电阻比＝(300K的室温中的电阻)/(4.2K的液态氦中的电阻)…(1)
实施方式的铝线中，所述析出粒子的面积率较佳为0.2％以上1.8％以下。
实施方式的铝线中，铝合金的铝纯度较佳为99.9质量％以下。
实施方式的铝线中，所述(111)的取向指数较佳为1.3以上。
实施方式的铝线中，所述(200)的取向指数较佳为0.6以下。
实施方式的铝线中，铝合金中的铁与硅的含有比，以铁/硅所示的质量比计，较佳为0.3以上90以下。
实施方式的铝线，其线径较佳为40μm以上700μm以下。
实施方式的铝线的制造方法，其特征为包含：准备铝合金材的步骤，该铝合金材为铝纯度99质量％以上的铝合金，且相对于所述铝合金的总量以总计0.01质量％以上1质量％以下含有铁及硅；以及拉丝加工步骤，对所述铝合金材进行拉丝加工。
实施方式的铝线的制造方法中，较佳为，所述拉丝加工的步骤是包含：中间拉丝步骤，将所述铝合金材进行拉丝至最终线径的7～130倍的线径而得到中间线材；以及固溶处理步骤，将所述中间线材于400℃～560℃加热后急冷，并进行拉丝至最终线径40μm以上700μm以下的步骤。
发明效果
根据本发明的铝线，可兼具长期可靠度以及不会发生工具偏离的对于横向弯曲的追踪性。在本发明的铝线中，由各构成带来的效果复杂地配合而形成加乘效果，而被认为同时解决了功率试验循环的长寿命化以及对于横向弯曲的追踪性的课题。
附图说明
图1是显示通过FE-SEM以倍率1000倍拍摄实施例12的铝线的剖面，并在影像分析中进行二值化以使辉度值高于阈值之处为白、低于阈值之处为黑色的影像。白色部分表示析出粒子。
图2是显示将比较例6的铝线的析出粒子与图1相同地进行拍摄、二值化的影像。
图3是放大拍摄发生了楔形工具偏离的线的楔形工具部的影像(左侧)与未发生楔形工具偏离的正常影像(右侧)。
图4是铝线的比较例与实施例的接合影像。
图5是显示实施例的铝线中与线轴方向垂直的剖面中晶体取向的EBSD(电子背散射衍射法)测量结果的影像。EBSD的测量结果以不同颜色表示各晶粒中的规定的晶体取向，但图5中将其以灰阶表示。图5的影像中，灰阶的色差越大，表示晶体取向不均匀的程度越大。
图6是概略显示实施方式的半导体装置的构成的剖面图。
图7是概略显示另一实施方式的半导体装置的构成的剖面图。
图8是图6的区域IV的放大图。
图9是概略显示半导体装置中产生的龟裂的与图8对应的剖面图。
图10是部分显示未产生龟裂的实施方式的半导体装置的影像。
图11是部分显示产生龟裂的半导体装置的影像。
具体实施方式
以下说明本发明的实施方式的铝线。本实施方式的铝线是由铝纯度99质量％以上的铝合金构成的铝线，其特征为：相对于铝合金的总量，以总计0.01质量％以上1质量％以下含有铁及硅，在铝线中与线轴垂直的方向的横剖面中，(111)的取向指数为1以上，且(200)的取向指数为1以下，析出粒子的面积率为0.02％以上2％以下的范围。以下详述本发明完成之前试误的过程与本发明的铝线的构成及制造方法。
本案发明人以数种不同的制造方法尝试制作组成不同的多种铝线。然后仔细观察试作线中与线轴方向垂直的剖面组织，结果观察到整体细小的晶粒组织及整体粗大的晶粒组织，此外在同一剖面中观察到晶粒部分粗大、部分细小这种晶粒尺寸混合的结晶组织。在同一剖面中，部分晶粒尺寸不同暗示了晶粒组织无法作为表示铝线整体特性的指标。此外，已知此等晶粒组织上具有粒状的物体(本说明书中称为“析出粒子”)。关于析出粒子于后段中叙述。
以EBSD(电子背散射衍射法)测量晶体取向，以确定此等晶粒尺寸不同的组织的晶体取向是否有所不同。图5中，晶粒的色差表示晶体取向不同。由图5可知，晶体取向根据部位而有所不同。这暗示了部分的晶体取向状态无法作为线整体特性的指标。在拉丝步骤中经过加工者，会沿着线的长边方向(线轴方向)变化。即，虽保持实用上的均匀性，但因为使用铸模进行拉丝加工时线的微振动、线与铸模的摩擦热等的影响，严格来说，根据长边方向的位置会产生特性不同之处。因此得知剖面的晶体取向无法一概而论，结果极难以晶体取向的比例统一地表现铝线整体的特性。
于是，研讨可表示铝线整体特性的指标的结果，以取向指数作为指标。取向指数是以线的各晶面的衍射强度比、即(各晶面的衍射强度÷各晶面的衍射强度的总和)除以无方位的铝粉末标准样品的衍射强度比所得到的值。通过求出取向指数，可定量地得知哪个晶面优先取向或是哪个晶面非优先取向，即晶面的优先取向的倾向。若以数学式表示取向指数，则为下述的威尔森式。铝粉末的标准样品的分析强度比采用由ICDD(国际衍射数据中心：处理粉末衍射数据的非营利科学组织)所提供的ICDD卡(PDF，也称为ASTM卡、JPCDS卡)PDFNo.00-004-0787(铝)的值。对于与线轴垂直的方向的线材剖面进行X射线衍射，从铝的各晶面的衍射强度比由下述威尔森式(1)求出各晶面的取向指数N。
上述(1)式中，I/I(hkl)为样品的(hkl)面中的衍射强度比，ICDDI/I(hkl)为ICDD卡的(hkl)面中的衍射强度比，ΣI/I(hkl)、ΣICDDI/I(hkl)分别为所有晶面的衍射强度比之和。另外，衍射强度可根据各峰的面积比求出。
铝线的取向指数将40条铝线捆成束而埋入树脂中，对于与线轴垂直的方向的横剖面进行X射线衍射，测量(111)、(200)、(220)、(311)、(222)、(400)的衍射强度，以威尔森式分别求出各晶面的取向指数。取向指数是实心铝线集合体的优先方位的值，并未受到各铝线的中心部与周缘部的双重组织等的不均匀的影响。此外，取向指数的值修正为与标准样品的比较值，因此可进一步呈现铝线的客观取向性。
本案发明人详细研究之后，尝试制作各种取向指数的铝线并测量取向指数的结果，发现将与线轴垂直的面的(111)的取向指数控制在1以上且(200)的取向指数控制在1以下的铝线在功率循环试验中为长寿命。
另外，如上所述，作为类似的指标，包含晶体取向比例。晶体取向比例是指测量在将铝线于某处切断的二维平面中晶体取向的占有率所得到的值。如图5所示，与线轴垂直的剖面中的晶体取向比例取决于铝线的切断处，即使是相同组成或制造条件，也会有一部分其晶体取向不固定而不均匀，因此仅通过晶体取向比例难以判定铝线的客观特性。
本案发明人实际针对后述实施例的各样本测量晶体取向比例，但并未得到其与功率循环寿命的关系。大致上来说，＜111＞的晶体取向比例高至50％以上的线具有长寿命的倾向，但＜111＞的晶体取向比例低至20％左右的线中，也存在20万次循环以上的长寿命的线。
接着说明析出粒子。本案发明人以各种制造步骤尝试制作多种铝纯度不同的铝线，针对与线轴方向垂直的剖面仔细观察金属组织的结果，发现根据各试作线的组成及制造条件，位于以铝为基础的基质上的析出粒子其形状、尺寸及个数有所不同。
本案发明人推论此等析出粒子与长期可靠度及线的追踪性有某种关连，使用图像处理软件分析以SEM(扫描电子显微镜反射电子影像)所拍摄的析出粒子的影像，将影像中的析出粒子的截面积数值化。关于数值化的方法在实施例中详述，发现析出粒子相对于与线轴方向垂直的剖面的面积率和功率循环试验的寿命及线的追踪性有所关连。即，本案发明人推论析出粒子的面积率会根据铝纯度与线的制造方法的不同组合而改变。
本案发明人大量尝试制作取向指数与析出粒子的面积率不同的线的组合，并且致力于进行功率循环试验及工具偏离评价，结果终于发明了在下述条件下具有长期可靠度且不会发生工具偏离的具有追踪性的线。
具有长期可靠度且不会发生工具偏离的具有追踪性的铝线是铝纯度99质量％以上且以总计0.01质量％以上1质量％以下含有铁及硅、以及与线轴方向垂直的剖面的(111)的取向指数为1以上，且(200)的取向指数为1以下、析出粒子相对于与线轴方向垂直的剖面的面积率为0.02％以上2％以下的铝线。这些构成互相配合而形成加乘效果，同时解决了相反的2个课题。从提升长期可靠度的观点来看，铝线中与线轴方向垂直的剖面的(111)的取向指数较佳为1.2以上，更佳为1.4以上，(200)的取向指数较佳为0.7以下，更佳为0.5以下。
析出粒子可在以铝为基础的基质上观察到，其为尺寸(粒子的最大长度)在0.01～30μm左右的块状、环状、板状、针状、类球状、不规则形等的粒子。认为它们包含在制造过程中结晶化的粒子或析出的粒子、及铝原材料所含的粒子。此外，认为析出粒子包含铝与铁的合金、金属间化合物、铝与铁与硅的合金、金属间化合物、硅单体的析出物中的任一种或两种以上。
析出粒子的面积率可通过线的组成(铁及硅的含有比例)或热处理温度、时间、热处理时机、拉丝加工条件等来控制。另外，析出粒子的面积率指相对于铝线中与线轴垂直的横剖面的截面积，析出粒子所占的面积的比例。针对试作的铝线，测量前端、后端、中间部的剖面中析出粒子的面积率，结果无论线的位置如何皆为大致同等的值，相较于晶体取向比例，面积率因测量处而不均匀的情况较少。即，这暗示了与线轴垂直的某一剖面中析出粒子的面积率即代表线整体的面积率。析出粒子的面积率可以下述方法算出。析出粒子在以SEM分析铝线中与线轴垂直的横剖面时，与其以外的区域的组成不同，因此呈现高辉度值的像素。在析出粒子以外的区域(铝基质)所显示的辉度值低。使用直方图(histogram)等对于该SEM影像进行二值化来决定分辨析出粒子与其以外的区域的辉度值的阈值(例如0.95)，算出析出粒子的区域相对于整体的面积率。另外，辉度值是以黑为0、白为1而标准化的值。
以上述构成而兼具两种相反特性的机制虽未必明确，但铁及硅的含量及析出粒子的面积率与长期可靠度及线的追踪性大幅相关，铁及硅太少或太多皆难以兼具这些特性。
本实施方式的铝线中，析出粒子的面积率在0.02％以上2％以下的范围。从提升追踪性的观点来看，析出粒子的面积率较佳为0.05％以上，更佳为0.1％以上，再佳为0.2％以上。此外，析出粒子的面积率较佳为1％以下，更佳为0.8％以下。
就功率循环试验的长寿命化(长期可靠度的提升)与铝线从楔形工具的偏离而言，取向指数与析出粒子的面积率的控制带来加乘效果。此外，本案发明人研究大量的添加元素，得知其中尤其是包含铁(Fe)与硅(Si)两种元素且使其总量在0.01质量％以上1质量％以下，能够进一步延长寿命且更不易发生工具偏离，再者，含有镓(Ga)与钒(V)中的至少一种元素且其总量在50质量ppm以上800质量ppm以下，可提高残留电阻比而抑制通电时的发热。
本实施方式的铝线由铝纯度(相对于铝线总量的铝量)99质量％以上的铝合金构成。即，本实施方式的铝线其铝纯度在99质量％以上。由此具有充分的导电率且可发挥良好的追踪性。铝线的铝纯度较佳为99.9质量％以下。通过使铝纯度在99.9质量％以下，可含有充分量的铁及硅，再者也可根据需求含有微量元素(镓及钒)以及微量元素(也称为添加元素，后述的镁(Mg)、铜(Cu)、镍(Ni)、锌(Zn)、铬(Cr)、锰(Mn)、钛(Ti)、锆(Zr)、钨(W)、钪(Sc))，因此可提升铝线的长期可靠度。
此外，由上述内容来看，本实施方式的铝线由总计0.01质量％以上1质量％以下含有铁及硅的铝合金构成。即，本实施方式的铝线，以相对于线总量共计包含0.01质量％以上1质量％以下的铁及硅。
本实施方式的铝线中，通过使铁与硅的总量在0.01质量％以上来达成比以往的铝线更长的寿命。此外，铁与硅的总量若超过1质量％，则析出粒子的面积率变得太大而会发生工具偏离。从容易达成长寿命的观点来看，铁及硅的量总计较佳为0.02质量％以上，更佳为0.05质量％以上，更佳为0.1质量％以上，再佳为0.13质量％以上。此外，从达成长寿命且减少工具偏离的观点来看，铁及硅的量总计较佳为0.9质量％以下，更佳为0.8质量％以下。
本实施方式的铝线中，相对于线的总量，铁的量较佳为0.01质量％以上，更佳为0.03质量％以上，再佳为0.05质量％以上，特佳为0.1质量％以上，尤佳为0.13质量％以上。此外，相对于线的总量，铁的量较佳为0.95质量％以下，更佳为0.9质量％以下。此外，相对于线的总量，硅的量较佳为0.01质量％以上，更佳为0.05质量％以上。硅的量较佳为0.5质量％以下，更佳为0.4质量％以下。通过将上述铁与硅的较佳范围组合，根据铁与硅的加乘效果，更容易得到接合的长期可靠度与抑制工具偏离的效果。
本实施方式的铝线中，铁与硅的含有比，以铁/硅所示的质量比计，较佳为0.3以上90以下，更佳为1.0以上45以下。铁与硅的含有比若在上述范围内，则容易控制析出粒子的析出量，而容易兼具线的追踪性与接合的长期可靠度。
本实施方式的铝线较佳含有镓与钒中的至少一种，该情况下，相对于线的总量，镓与钒的总量较佳为50质量ppm以上。镓与钒对于线长寿命化而言并非必要，但通过含有它们之中至少一种，有助于线的长寿命化。镓与钒之中至少一种的含量的上限并未特别限定，为1000质量ppm左右，若以50质量ppm以上含有这些元素，则容易得到进一步长寿命化的效果，若含量为800质量ppm以下，容易抑制通电时铝线的最高到达温度。相对于线的总量，镓与钒的含量可为100质量ppm以上，也可为150质量ppm以上。相对于线的总量，镓与钒的含量可为700质量ppm以下，也可为600质量ppm以下。就镓与钒的含量而言，在线中仅含镓与钒中的任一种的情况下，该种元素的量在上述范围内即可，在包含镓与钒两者的情况下，镓与钒的总量在上述范围内即可。
例如，使用纯度99.99质量％的铝线的情况下的通电时的最高到达温度为150℃的情况下，若镓与钒的含量在800质量ppm以下，可将最高到达温度抑制在160℃以下。即，以纯度99.99质量％的铝线作为基准，可将通电时的发热上升温度抑制在10℃左右以内。
本实施方式的铝线中，除了铁、硅、镓、钒以外，也可包含镁(Mg)、铜(Cu)、镍(Ni)、锌(Zn)、铬(Cr)、锰(Mn)、钛(Ti)、锆(Zr)、钨(W)、钪(Sc)等微量元素中的1种或2种以上。微量元素的含量相对于线整体，铁、硅、镓及钒与微量元素的合计为1.0质量％以下的量，较佳为铁、硅、镓及钒与微量元素的合计为0.1质量％以上的量。
相较于使用上述纯度99.99质量％的铝线的情况，残留电阻比越大，通电时的发热温度上升的程度越大。残留电阻比不仅受到杂质量及铝纯度的影响，也受到线的加工应变等的影响，因此更正确地反应出通电所造成的发热温度上升。
在上述基准之下，温度上升若到达30℃以上，也会大幅影响与线相接的构件。例如，覆盖线的密封树脂，若温度上升，则树脂中诱发线腐蚀的元素挥发而从树脂释放出来的可能性变高。为了防止线的腐蚀，需要具有耐热性的密封树脂及散热的设计等而导致制造成本上升，也倾向于妨碍功率半导体的设计自由度。
残留电阻比是表示4.2K(开尔文)的液态氦中的电阻与室温300K的电阻之比的数值，其以下式表示。
残留电阻比＝(室温中的电阻)/(液态氦中的电阻)
本实施方式的铝线的残留电阻比较佳为10以上，更佳为15以上。若残留电阻比小于10，因通电时的发热所造成的温度上升在上述基准下容易达到30℃以上，具有对于线周边构件造成不良影响的疑虑。
本实施方式的铝线的线径通常为40μm以上700μm以下，较佳为70μm以上600μm以下，更佳为100μm以上500μm以下。铝线的剖面形状通常为圆形，此外也可为椭圆形或长圆形、四边形等。
(铝线的制造方法)
接着说明实施方式的铝线的制造方法的一例。另外，铝线的制造方法不限于以下所示的制造方法。预期根据欲制造的铝线的重量及热处理炉的处理能力来适当调整条件。
使99质量％以上的高纯度铝与铁及硅一起溶解以制作铝熔液。作为原料的高纯度铝的纯度可为99.9质量％以上，也可为99.99质量％以上。溶解使用电弧加热炉、高频加热炉、电阻加热炉、连续铸造炉等加热炉。在大气中溶解也无问题，但以防止来自大气中的氧及氢混入为目的，加热炉的铝熔液也可保持于真空或氩、氮等非活性气体环境中溶解。已溶解的材料，也可从加热炉在连续铸造中使其凝固成规定线径(直径)。或者，也可将已熔融的铝注入铸模以制作铸锭，将该铸锭设置于挤制机中，进行挤制成形加工而成为规定的线径。
将上述步骤中所得的线材进行拉丝加工而成为线径5.0mm的中间线材。中间线材的线径通常为最终线径的7～130倍。接着进行固溶处理，在400℃～560℃对于拉丝加工后的线(中间线材)加热60分钟～420分钟以实施中间热处理，之后进行急冷。急冷速度为例如20℃/秒以上300℃/秒以下，较佳为20℃/秒以上100℃/秒以下。急冷速度可为从急冷开始至结束的速度，但若在温度400℃至300℃的范围内的冷却速度为上述范围，则容易得到上述效果而更佳。固溶处理的目的主要在于使铝以外的元素固溶于铝基质中。固溶处理后进行拉丝加工至最终线径。拉丝加工中，使线依序通过多个超硬铸模或钻石铸模，阶段性缩小线的线径。
对于已拉丝至最终线径的线实施最终热处理。最终热处理主要具有下述作用：去除线内部中所残留的金属组织的应变或调整线的机械特性等。然而，因为可能会影响析出粒子的面积率，故考虑这些因素来调节最终热处理的温度及处理时间。
中间热处理及最终热处理，具有使线通过加热至规定温度的加热环境内以进行热处理的行进式热处理以及在密闭式的炉内将线加热而进行的批次式热处理。本实施方式中的最终热处理较佳以200℃以上340℃以下进行批次式热处理60分钟左右。
(半导体装置)
接着参照图6说明使用实施方式的铝线的半导体装置100的构成。
如图6所示，半导体装置100具备半导体元件1、金属膜2、线3、电路图案41、金属图案42、绝缘构件43、散热构件5、接合材6、壳体7、端子8及密封材9。
本实施方式中，半导体元件1为例如供电用的半导体中所使用的功率半导体。作为半导体元件1，可列举例如：金属氧化物半导体场效晶体管(MOSFET；Metal OxideSemiconductor Field Effect Transistor)、IGBT等。
半导体元件1是依序由电极11、基板部13及背面电极12层叠而成。电极11为例如铝(Al)-硅(Si)电极，基板部13为例如硅(Si)基板、碳化硅(SiC)基板、氮化镓(GaN)基板等。
在电极11中与基板部13相反侧的表面上以覆盖电极11表面的方式具备金属膜2。金属膜为镍(Ni)膜、铜(Cu)膜、钛(Ti)膜、钨(W)膜等，其是由电镀、无电解镀覆、蒸镀、溅镀等所形成的膜。作为镍(Ni)膜，具有镍(Ni)无电解镀覆膜，具体可列举无电解镍(Ni)-磷(P)镀覆膜、无电解镍(Ni)-硼(B)镀覆膜等。金属膜2的其他较佳形态如后述。
线3由上述实施方式的铝线构成，其构成及特性也如上所述。线3接合于金属膜2表面。
接着参照图8说明图6所示的实施方式的半导体装置100中的金属膜2与线3的接合构造。图8是示意显示图6的IV区域(金属膜2与线3的接合界面附近)的放大图。另外，图8中省略密封材9(参照图6)的记载。
将图8所示的线3与金属膜2的接合界面附近称为接合部31。接合部31例如是从线3与金属膜2的接合界面朝向线3内部距离1个晶粒的位置的范围。
此处，铝线的耐热性不足的情况下，会因为对于线反复地开始通电与停止通电，而在接合部31的金属膜与线的接合面附近产生热应力，因此可能对于铝线造成金属疲劳，结果可能在线3中产生龟裂。图9是示意显示在线中产生龟裂CR的接合部31的图。此外，图10是线中未产生龟裂的接合部31附近的影像，图11是显示龟裂CR在线内发展的状态的影像。
根据上述实施方式的铝线，线可维持长期耐热性，因此，即使对于线反复开始通电与停止通电也不会产生线的龟裂，可长期稳定维持接合部31的接合。再者，通过线良好的追踪性，并结合不会发生楔形接合不良的效果，可得到接合(第一接合及第二接合)的长期可靠度。
此外，因为线可发挥长期耐热性，无论接合对象(电极或金属膜)的材料如何皆可得到接合的长期稳定性。再者，通过施用于本实施方式的金属膜2，可更提升长期稳定性的效果，因而较佳。
线的接合对象的硬度小于线时，线中产生的龟裂可能会传播至接合对象而使龟裂在接合对象中发展。相对于此，如本实施方式的金属膜2，接合对象比线更硬时，万一线中产生微小的龟裂，龟裂也不会朝向接合对象内发展，由此抑制线及接合对象中的龟裂扩大，而认为可进一步实现接合的长期可靠度。
作为这样的金属膜2，较佳为无电解镍(Ni)-磷(P)镀覆膜、无电解镍(Ni)-硼(B)镀覆膜、电镀成膜的镍(Ni)膜或铜(Cu)膜、蒸镀或溅镀成膜的镍(Ni)膜、铜(Cu)膜、钛(Ti)膜或钨(W)膜。这些金属膜2具有结晶构造。此外，金属膜2的镍(Ni)的纯度高。因此可抑制金属膜2在热处理时破裂。
从成本的观点来看，金属膜2较佳为不含硫(S)的无电解镍(Ni)-磷(P)镀覆膜，其中磷含量相对于金属膜2的总量较佳为8质量％以下，更佳为5质量％以下。磷含量若在8质量％以下，金属膜2因为具有结晶构造，金属膜2的硬度增加，由此可抑制金属膜2的破裂。此外，因为不含硫(S)，可抑制硫(S)在晶界偏析所造成的晶界脆化，由此也可抑制金属膜2的破裂。根据以上所述，金属膜2的耐热性提升。
接着说明半导体装置100的其他构成。半导体装置100内，通过半导体元件1、线3、端子8、电路图案41及金属图案42而形成有半导体电路。线3在半导体装置100内弯折，使用此弯折部分别接合于半导体元件1、端子8、电路图案41等。
半导体装置100中，散热构件5表面上依序层叠有接合材6、金属图案42、绝缘构件43、电路图案41、接合材6、半导体元件1。接合材6分别将散热构件5与金属图案42、电路图案41与半导体元件1的背面电极12接合，其由焊锡、银(Ag)等构成。绝缘构件43为绝缘基板等。
壳体7由内部具有空间的环状框体构成，其设置成围住散热构件5的外周。壳体7的内部空间容纳了上述半导体元件1、金属膜2、线3、电路图案41、金属图案42、绝缘构件43、接合材6及密封材9。
端子8作为与外部设备的连接端子而发挥功能。端子8设于壳体7的上表面，其一边的端部在壳体7的内部空间内、另一边的端部在壳体7的外部区域，分别配置成从壳体7突出。密封材9填充于壳体7的内部空间中而将半导体元件1、金属膜2、线3、电路图案41、金属图案42、绝缘构件43、接合材6内包于其中。密封材9为胶状的密封树脂或模塑树脂的硬化物等。
图7显示具有引线框架的半导体装置101以作为半导体装置的另一实施方式。图7中，针对发挥与图6所示的半导体装置100相同功能的构成赋予相同符号而省略详细说明。图7所示的半导体装置101，除了半导体元件1、金属膜2、线3、绝缘构件43、接合材6、密封材9以外，还具有引线框架LF。图7所示的半导体装置101因为具有引线框架LF而不具有壳体7，但也可具有壳体7。引线框架LF接合于绝缘构件43的表面上，具有与图6所示的半导体装置100的电路图案41相同的功能。另外，图7中，引线框架LF与绝缘构件43接合，但引线框架LF与绝缘构件43之间也可配置金属板(图中未显示)。
密封材9设置成内包半导体元件1、金属膜2、线3、绝缘构件43、接合材6、引线框架LF。然而，引线框架LF的端部突出至密封材9的外部，引线框架LF构成半导体元件1及线3的电路，上述突出的端部作为用以连接至半导体装置101的外部设备的端子8而发挥功能。
接着说明图6及图7所示的半导体装置100、半导体装置101的制造方法。首先，准备构成半导体装置100、101的各构件，如上述构成进行层叠并互相接合。之后在金属膜2的表面以超声波接合等将线3的端部接合。之后，将线3的另一端部楔形接合于外部电极。使用上述实施方式的铝线作为线3。之后，将密封树脂注入半导体装置100并使其硬化，形成密封材9。在半导体装置101的情况下，将搭载了上述半导体元件1等的引线框架配置于模具内，注入密封树脂并使其硬化，形成密封材9。
实施例
接着说明实施例。本发明不限于以下的实施例。
准备纯度为99.9质量％以上的高纯度铝的基体金属(parent metal)。以表1记载的量分别添加铁与硅。此外，以表1所示的量添加镓与钒以作为任意元素。这些实施例的铝合金组成显示于表1。于大气下将该各样本的合金分别溶解后进行连续铸造，得到线材。将所得的线材拉丝加工至中间线径5mm，将此中间线径5mm的线在400℃至560℃以进行中间热处理60分钟。经过60分钟后立即在水中以25℃/秒以上的冷却速度急冷。之后，将线进行拉丝加工至最终线径400μm，最后在批次式炉中在200℃至340℃之间以实施最终热处理60分钟。以卷绕机将最终热处理结束的铝线约每300m卷绕于线轴。
接着求出实施例的各样本的取向指数及析出粒子的面积率。
(线取向指数测量)
在卷绕成约300m的各样本的线的前端部、后端部及前端与后端的中间附近(中间部)3处进行取样，将其分别以与线轴垂直的方向的横剖面相对于线轴大致垂直露出的方式埋入树脂。以砂纸将埋入有该线的树脂粗研磨而使上述横剖面在表面露出，之后最终以抛光研磨进行镜面精加工后，以X射线衍射装置(Rigaku公司制SmartLab)针对各部位进行测量。为了得到X射线衍射的强度，必须要有一定程度的线截面积，仅一条线径400μm的样本有强度不足的疑虑。因此针对1次测量，将约40条线捆束密合、埋入并进行研磨后提供至X射线衍射。
以下述分析条件进行：X射线产生部的对阴极为Cu，输出45kV，200mA，检测部为半导体检测器，入射光学系为平行光束法(狭缝校正)、索勒狭缝的入射侧为5°，受光侧也为5°，狭缝的入射侧IS＝1mm，长边限制2mm，受光侧的RS1＝1mm，RS2＝2mm，扫描条件如下：扫描轴为2θ/ω，扫描模式为连续扫描，扫描范围30～100°，步进幅度为0.02°，扫描速度为3°/分钟。
测量各样本的(111)、(200)、(220)、(311)、(222)、(400)的衍射强度(峰值分离)，从威尔森式求出各取向指数。
实施例中尤其呈现出特征倾向的(111)与(200)的取向指数与合金组成一并显示于表1。另外，表1的取向指数记载每个样本各5卷的线的前端、后端、中间部3处的平均值(5卷×3处，即共15处的平均值)。另外，如上所述，在每1个位置处，将40条线的周边部分切断并将40条捆束以进行测量。
(析出粒子的面积率测量)
针对最终线径400μm的固溶处理后的线的前端部、后端部及中间部的析出粒子的粒径，通过FE-SEM(场发射型扫描式电子显微镜，日本电子制JSM-7800F)以观察倍率400倍拍摄与线轴垂直的方向上的横剖面。然而若为400倍，拍摄范围内仅包含圆形剖面的四分之一左右，因此将线剖面分成4份逐次拍摄，再将这些影像合并，求出析出粒子相对于圆形剖面整体的占有面积。SEM拍摄条件将加速电压设定为5kV，工作距离(W.D.)设定为10mm，选择反射电子像(BED-C)而实施。在0至1的范围内将影像分析中所拍摄的SEM影像的辉度值标准化之后，使阈值为0.95而进行二值化，将辉度值高于阈值的区域视为析出粒子。
此外，影像分析中，在辨识为粒子的影像上的区域之中，将在8邻域相邻的像素计算为一个粒子。8邻域表示以辨识为粒子的规定区域作为中心，其上下左右及将其旋转45°的8个方向，在此8个方向的任一方向上接触的区域定义为1个粒子。
接着，以百分率表示相对于与线轴方向垂直的剖面整体的截面积的比例。析出粒子的面积率在线的前端部、后端部及中间部皆几乎一致。各实施例中的析出粒子的面积率显示于表1。实施例12的析出粒子显示于图1，后述比较例6的析出粒子显示于图2。其中，图1与图2是为了使析出粒子更为清晰而通过影像分析将以1000倍拍摄的影像二值化而成的影像。显示白色的部分为析出粒子。
[表1]
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(工具偏离评价1)
接着，针对铝线的线径400μm的各样本，使用超声波接合装置(K&S制wire bonderASTERION)，以第一接合与第二接合的距离为5mm的方式接合于铝板。第二接合部相对于线轴方向在水平方向上横向往目标角度45°弯曲并进行接合(参照图4，图4左下的影像为只能弯曲30°左右)。以对于各样本而言超声波能量与加压力分别成为最佳条件的方式设定接合条件。另外，接合工具使用Kulicke&Soffa公司制，型号：127591-16，夹住该线的夹口的尺寸为横宽(内径)0.5mm、深度(高度)0.2mm、长度(深长)1.0mm。
观察第二接合部分的线的状态，以针对各样本判定是否发生工具偏离的不良情形。各样本进行30次(将第一接合与第二接合的组合视为1次)，线未附着或只要有1处如图4左下发生局部接触的与工具的接触痕的情况即不合格而视为“C”。如图4右下正常接合则合格而视为“A”，作为工具偏离的评价而显示于表1。
图4的右侧上下2个影像为实施例1的影像。右上图是以超声波进行第一接合后的影像，右下图是相对于已进行第一接合的线的长边方向在水平方向上横向弯曲45°并进行第二接合后的影像。从两个影像可明确得知无接触痕等而正常接合。
(功率循环试验评价)
针对铝线的线径为400μm的各样本，以超声波接合装置(超声波工业制wirebonder REBO9)将其接合于表面的铝合金电极上的镍经过金属化(金属膜形成于表面)的功率芯片。接合条件以对于各样本接合后的线宽度成为500μm的方式分别设定超声波能量与加压力。设定电流、通电时间、冷却时间以使功率芯片的最大温度为150℃，最低温度为50℃，即ΔT＝100℃，实施功率循环试验。此时的通电时间约7秒，通电停止时间约13秒，每一循环实施约20秒来实施。
将“通电时功率芯片的正面与背面的电极间的电位差相对于初始值增加5％的循环次数”定义为功率循环试验中的寿命，将寿命在20万次循环以上的样本视为寿命在目标以上而表记为“S”，将10万次循环以上且小于20万次循环视为目标水平而表记为“A”，将5万次循环以上且小于10万次循环的样本视为及格而表记为“B”，将小于5万次循环的样本视为不合格而表记为“C”。各实施例中的铝线的功率循环试验的评价显示于表1。
(残留电阻比的测量1)(发热)
残留电阻比(RRR)以在4.2K(开尔文)的液态氦中的电阻与室温300K中的电阻之比表示。针对所制造的铝线裁切出15cm的长度并测量其电阻。电阻测量皆以四端子法进行，分别测量电阻后，计算以求出它们的比。另外，由于残留电阻比与通电时的温度上升成比例关系，若残留电阻值为10以上且小于15，在从上述纯度99.99质量％的铝线的最高到达温度起算，可将上升抑制30℃以内而表记为“A”，若在15以上则可将温度上升抑制在10℃以下而表示更佳之意，表记为“S”，将其记载于表1的线评价字段。此外，上升温度在30℃以上则视为不合格而评价为“C”。
(综合评价1)
上述3个评价中只要有2个“S”且1个“A”则视为优良而在综合评价中判定为“优”，1个“S”且2个“A”的情况则视为良好而在综合评价中判定为“良”，上述以外的评价组合且无“C”的评价则视为及格而判定为“可”，只要有1个评价“C”的样本则视为不合格而在综合评价中判定为“不可”，分别记载于表1。
接着，依照表2～13记载而调整铝线的组成，并在上述实施方式的范围内调整中间线径、中间热处理条件、最终热处理条件等制造条件，除此之外与实施例1相同地得到最终线径400μm的实施例33以后的铝线。针对这些铝线，也与实施例1相同地测量取向指数、析出粒子的面积率，进行线特性的评价。另外，针对实施例33以后，如以下“工具偏离评价2”、“残留电阻比的测量2”、“综合评价2”，比上述实施例1～32更为详细地设定工具偏离评价、发热(残留电阻比)评价、综合评价的基准。另外，各表中“－”的表记表示低于测量下限。
(工具偏离评价2)
工具偏离试验与上述“工具偏离评价1”相同地进行，以下述方式进行评价。观察第二接合部分的线的状态来判定是否发生工具偏离的不良情形。各样本中进行100次(将第一接合与第二接合的组合视为1次)，线未附着或如图4左下在4处以上具有局部接触的与工具的接触痕的情况即为不合格而记为“C”，若为2～3处则虽期望稍微改良但在实用上没有问题，因此记为“B”，若为1处则非常优良而为合格记为“A”，完全无接触痕者记为“S”，以此作为工具偏离的评价。
(残留电阻比的测量2)(发热)
残留电阻比(RRR)的试验与上述“残留电阻比的测量1”相同地进行，将评价基准变更如下。残留电阻比与通电时的温度上升成比例关系。残留电阻值在15以上的情况，从上述纯度99.99质量％的铝线可到达的最高到达温度起算，可将温度上升抑制在10℃以下即表示非常优良而评价为“S”，可将上升抑制在超过10℃且在20℃以下的情况评价为“A”，可将上升抑制在超过20℃且小于30℃评价为“B”，温度上升在30℃以上即为不合格而评价为“C”。
(综合评价2)
上述3个评价中，具有1个以上的“S”且其他为“S”或“A”的情况表示优良而在综合评价中判定为“优”，“A”与“S”总计为2个以上的情况表示良好而在综合评价中判定为“良”，2个以上的“B”且无“C”的评价表示合格而在综合评价中判定为“可”，只要有1个评价为“C”的样本则表示不合格而在综合评价中判定为“不可”，分别记载于表中。
各评价的具体组合(无关顺序)如以下所述。
“优”：SSS、SSA、SAA
“良”：SAB、SSB、AAB、AAA
“可”：SBB、ABB、BBB
“不可”：只要有一个C的情况。
将以上的结果与组成一并记载于表2～表13。
[表2]
[表3]
[表4]
[表5]
[表6]
[表7]
[表8]
[表9]
[表10]
[表11]
[表12]
[表13]
另外，表1所示的实施例的铝线中所含有的元素的详细内容显示于表14。
[表14]
接着说明比较例。与实施例相同，准备纯度99.9质量％以上的铝基体金属，以成为表15所示的组成的方式添加Fe、Si、Ga、V。比较例1至比较例4是与实施例17相同组成的线，但其是改变了在中间线径及最终线径的热处理温度及时间、从各线径至下一线径的加工率、中间热处理后的冷却速度、各铸模的断面收缩率等制造条件而制成的线。此外，比较例5与比较例6中，组成本身与实施例不同。以与实施例1相同的方法实施这些比较例的铝线的取向指数、析出粒子的面积率及残留电阻比(发热)的测量方法，测量结果整理于表15。
针对析出粒子的面积率，与实施例相同地从以400倍拍摄的影像，将辉度值的阈值设定为0.95，进行二值化而分为析出粒子(辉度值高：白色)与析出粒子以外(辉度值低：黑色)，求出析出粒子的面积率。图2是比较例6的铝线的析出粒子，面积率如表15所示为3.2％。面积率根据以400倍拍摄的影像求出，但图2是为了容易判别析出粒子而以1000倍拍摄并进行二值化处理后的影像。
[表15]
此外，针对比较例1的铝线验证该线是否从楔形工具偏离。另外制作与比较例1的铝线相同的线，相对于经过第一接合的线的长边方向，在水平方向上横向弯曲30°并进行第二接合时，如上述图4左下的影像，发生线从楔形工具偏离，在局部接触的状态下进行接合。以对于各样本而言，使超声波能量与加压力分别成为最佳条件的方式设定接合条件。图4的左上是以超声波进行了第一接合者，如上所述，左上影像中左侧的线被斜向裁切，右侧的线无法与基板接合而未附着。
此外，与实施例相同，针对比较例1～6，将功率循环试验的寿命测量、工具偏离试验、发热评价试验及综合评价的结果显示于表15。
接着，表15所示的比较例的铝线中所含有的其他元素的详细内容整理显示于表16。
[表16]
再者，准备纯度99.9质量％以上的铝基体金属，以表17、表18所示的组成的方式添加铝以外的元素(Fe、Si、Ga、V)，变更热处理条件等制造条件，除此之外与上述实施例33相同地得到比较例7以后的铝线。针对这些比较例7以后的铝线，与实施例相同地评价各种特性。结果显示于表17、18。另外，表17、18所示的比较例中，针对工具偏离与残留电阻比、综合评价，分别使用“工具偏离评价2”、“残留电阻比的测量2”、“综合评价2”的基准。
[表17]
[表18]
表15、表17、表18所示的比较例的任一铝线在所有的评价中皆无合格者，在综合评价中为不可。此外，各数据的不均匀范围狭窄，测量处所造成的不均小。即这暗示了任一与线轴方向垂直的剖面的测量数据皆可认定是表示线整体的值。
由上述内容来看，实施方式的功率半导体用铝线通过控制取向指数及析出粒子的面积率，可同时解决“具有对于横向弯曲的追踪性且不会发生线从楔形工具偏离”这样的课题以及“在功率循环试验中长寿命化”的课题。
根据本发明的功率半导体用铝线，极有助于功率电子产业、汽车产业、电气化铁路、电力产业等的发展。

Claims (12)

1.一种铝线，由铝纯度为99质量％以上的铝合金构成，其中，
相对于所述铝合金的总量，以总计0.01质量％以上1质量％以下含有铁及硅，
所述铝线中与线轴垂直的方向的横剖面中，(111)的取向指数为1以上，且(200)的取向指数为1以下，析出粒子的面积率为0.02％以上2％以下。
2.根据权利要求1所述的铝线，其中，
所述铝合金中，相对于总量，以总计0.1质量％以上1质量％以下含有铁及硅，所述析出粒子的面积率为0.1％以上2％以下。
3.根据权利要求1或2所述的铝线，其中，
相对于所述铝合金的总量，进一步以总计50质量ppm以上800质量ppm以下含有镓与钒中的至少一种元素。
4.根据权利要求1至3中任一项所述的铝线，其中，
下式(1)所示的残留电阻比为10以上；
残留电阻比＝(300K的室温中的电阻)/(4.2K的液态氦中的电阻)…(1)。
5.根据权利要求1至4中任一项所述的铝线，其中，
所述析出粒子的面积率为0.2％以上1.8％以下。
6.根据权利要求1至5中任一项所述的铝线，其中，
所述铝合金的铝纯度为99.9质量％以下。
7.根据权利要求1至6中任一项所述的铝线，其中，
所述(111)的取向指数为1.3以上。
8.根据权利要求1至7中任一项所述的铝线，其中，
所述(200)的取向指数为0.6以下。
9.根据权利要求1至8中任一项所述的铝线，其中，
所述铝合金中的铁与硅的含有比，以铁/硅表示的质量比计为0.3以上90以下。
10.根据权利要求1至9中任一项所述的铝线，其线径为40μm以上700μm以下。
11.一种铝线的制造方法，包含：
准备铝合金材的步骤，该铝合金是铝纯度为99质量％以上的铝合金，其中相对于所述铝合金的总量，以总计0.01质量％以上1质量％以下含有铁及硅；以及
对于所述铝合金材进行拉丝加工的步骤。
12.根据权利要求11所述的铝线的制造方法，其中，
所述拉丝加工的步骤是包含：
中间拉丝步骤，将所述铝合金材进行拉丝至最终线径的7～130倍的线径而得到中间线材；以及
固溶处理步骤，将所述中间线材于400℃～560℃加热后急冷，
并进行拉丝至最终线径40μm以上700μm以下的步骤。
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