KR900000439B1 - 접합선의 접속을 개량한 반도체 장치와 그 제조방법 - Google Patents

접합선의 접속을 개량한 반도체 장치와 그 제조방법 Download PDF

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KR900000439B1
KR900000439B1 KR1019850006793A KR850006793A KR900000439B1 KR 900000439 B1 KR900000439 B1 KR 900000439B1 KR 1019850006793 A KR1019850006793 A KR 1019850006793A KR 850006793 A KR850006793 A KR 850006793A KR 900000439 B1 KR900000439 B1 KR 900000439B1
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semiconductor device
manufacturing
junction line
connection
lead electrode
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KR1019850006793A
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KR860003655A (ko
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히로유끼 바바
다까시 마쓰자끼
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가부시끼가이샤 도오시바
시바 쇼오이찌
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Publication of KR860003655A publication Critical patent/KR860003655A/ko
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    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/22—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded
    • B23K20/233—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer
    • B23K20/2333—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer one layer being aluminium, magnesium or beryllium
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Abstract

내용 없음.

Description

접합선의 접속을 개량한 반도체 장치와 그 제조방법
제1도는 종래의 방법으로 제조된 반도체장치의 단면도.
제2도 내지 제5도 및 제7도는 본 발명의 제조방법을 공정순으로 도시한 설명도.
제6도는 반응층의 형성을 위한 시간과 온도와의 관계를 나타내는 그래프.
제8도 내지 제10도는 리이드전극과 접합선의 접속상태를 나타낸 설명도이다.
* 도면의 주요부분에 대한 부호의 설명
1 : 리이드전극 2 : 니켈도금층
3 : 접합선 4 : 반도체소자
5 : 전극패드 20 : 리이드프레임
21 : 납층 22 : 반도체소자
23 : 접합선 24 : 전극패드
25 : 리이드전극 26 : 접합부
27 : 수지봉입물질 40, 42 : 히터
50 : 받침대 52 : 송풍구
70 : 니켈도금층
본 발명은 반도체장치 및 그 제조방법에 관한 것으로, 특히 접합선(bonding sire)의 한 종단을 반도체 소자의 접합패드(bonding pad)에 접속시키는 한편 다른 한 종단을 리이드프레임에 양호하게 접속시킴으로서 고온이나 고온 조건 및 높은 습도조건하에서도 전기적으로 우수한 성능을 발휘할 수 있도록 한 반도체장치 및 그 제조방법에 관한 것이다.
종래 반도체장치의 제조방법으로는 제1도에 도시된 바와같이 구리나 구리합금으로 된 리이드전극(1)의 표면에다 니켈도금층(2)을 형성시켜 이 니켈도금층(2)을 매개로 접합선(3)을 써서 반도체소자(4)의 전극패드(5)와 리이드전극(1)을 접속시키는 것이었다. 여기서 부호 6은 수지봉입물질이고, 7은 리이드프레임(8)상에 니켈도금층(9)을 매개하여 형성시킨 납층이다.
그러나 니켈도금층(2)(9)을 형성시킴에 있어서는 도금품질에 큰 변이가 있을 뿐만아니라 효과적인 도금처리를 하기위해서는 그 제조공정이 복잡하고, 이로 말미암아 도금처리에 따르는 비용이 비싸지게 된다는 문제가 따랐다. 이 때문에 근래에와서는 알루미늄으로 된 접합선(3)을 도금 처리함이 없이 직접 리이드전극(1)에다 접속시키고 있다.
그런데 구리같은 것으로 된 리이드전극에다 알루미늄 접합선(3)을 직접 접속시켜놓은 반도체장치는 고온조건(150℃,175℃)하에서나 또는 고온(약80℃)과 높은 습도(약 90%) 조건하에서 장시간 방치실험을 해보면 접합선(3)과 리이드전극(1)의 접합경계면이 노출되기 때문에 신뢰도가 저하되는 문제점이 있었다.
이와같은 문제점을 해소시키기 위해 일본 특허출원 제55-88318호의 공보에 접합영역을 선택적으로 활성화시키므로써 구리선으로 된 접합선과 구리로 된 리이드프레임 사이에다 접합선을 가설시키는 기술이 안출되어 게재되어 있다. 그러나 이 기술에서는 접합선쪽에 발생되는 산화물로 말미암아 접합불량이 발생됨과 더불어 접합선의 선단부에 소정의 볼을 형성시키기가 어렵다는 문제점이 있을 뿐만아니라 각각의 접합처리시마다 접합영역이 활성화되기 때문에 작업성이 저하되는 문제점이 나빠지게 되는 결점이 있다.
또 일본 특허출원 제57-51237호 공보에는 접합선을 이끌어 나오도록 하는 모세관의 선단부를 환원분위기로 하도록 하는 덮개속으로 이끌어 넣어 바라는 형상의 볼을 형성시킴과 더불어 접합선의 산화를 방지토록 하는 접합처리기술이 개시되어져 있기도 하다.
그러나 이러한 기술은 환원분위기를 유지시키기 위해서 덮개를 포함하는 복잡한 기구가 필요하게 되어 1초도 못되는 속도로 처리를 해야하는 접합처리에서는 고장나기가 쉬워 그 보수관리에 많은 수고가 다를 뿐만아니라, 외부리이드가 형성된 리이드프레임쪽의 산화물을 제거할 수 없기 때문에 구리선으로 된 접합선과 구리로 된 리이드 프레임사이에 신뢰성있는 접합처리를 할 수 없다는 문제점이 있었다.
본 발명은 상기한 문제점을 개선하기 위한 것으로, 고온조건에서나 고온·고습하에서 양호한 전기적 특성을 발휘할 수 있는 신뢰성 높은 반도체장치 및 이러한 반도체장치를 쉽게 생산할 수 있는 제조방법을 제공함에 그 목적이 있다.
본 발명은 구리 또는 구리합금으로 된 리이드전극에다 알루미늄으로 된 접합선의 선단을 반응층의 두께가 0.2미크론 이상이 되도록 하여 고온조건과 고온 및 높은 습도조건하에서도 우수한 전기적특성을 발휘할 수 있도록 된 반도체장치에 관한 것이다.
본 발명은 구리 또는 구리합금으로 된 리이드프레임의 피접합영역에다 알루미늄으로 된 접합선을 접속시킴과 더불어 열처리를 한 구리나 구리합금과 알루미늄과의 반응층두께가 0.2미크론 이상이 되도록 하는 공정을 마련해 놓음으로써 고온조건에서나 고온. 고습도조건하에서도 우수한 전기적 특성을 발휘할 수 있는 신뢰성이 높은 반도체장치를 쉽게 생산할 수 있는 반도체장치의 제조방법에 관한 것이다.
이하 본 발명의 구성 및 작용, 효과를 예시도면에 의거 상세히 설명하면 다음과 같다.
먼저, 제2도에 도시된 바와같이, 구리나 구리합금으로 된 리이드프레임(20)의 마운트부에는 납땜층(21)을 매개로 반도체소자(22)를 장치한다. 여기서 구리합금으로서는 청동이라던지 철을 함유하는 기타의 구리합금을 사용할 수도 있다.
다음에는 제3도에 도시한 바와같이, 순도 99.99%로 된 굵기 200μø인 알루미늄으로 된 접합선(23)의 한쪽끝을 반도체소자(22)의 전극패드(24)에다 초음파접합법으로 융착시킨다. 이어 접합선(23)의 다른쪽끝을 리이드프레임(20)의 리이드전극(25)에다 전술한 바와 마찬가지로 초음파접합법을 써서 융착시킨다. 또 여기서 리이드전극(25)도 리이드프레임(20)처럼 구리 또는 구리합금으로 형성시킨 것으로 한다.
다음에는 접합선(23)과 리이드전극(25)의 융착부에 형성되어진 알루미늄과 구리 또는 구리합금과의 반응층 두께를 0.2미크론 이상으로 하기위해 열처리를 한다.
이때에는 제4도에 도시되어져 있는 바와같이, 리이드전극(25)에다 열처리를 하기 위한 리이드프레임(20)이 I가 있는 곳으로 나아가게 되면 약 600℃의 온도로 되어져 있는 히터(40)(42)가 아래위 방향에서 리이드전극(25)에다 열을 전달하게 된다.
이때 리이드프레임(20)은 제4도의 외쪽에서 오른쪽을 향하여 약 1.2 내지 1.3초마다 이동하게 된다. 따라서 0.2미크론이상이 되는 반응층을 형성시키기 위해서는 히터(40)을 한번만 접촉시켜서는 충분한 열량을 공급할 수가 없게 되므로 리이드프레임(20)의 이동에 맞추어 히터를 여러곳에다 설치해두어 0.2미크론 이상이 되는 두께를 갖는 반응층이 형성되어지도록 한다. 제4도에서는 Ⅰ과 Ⅱ의 두곳에다 설치해 놓은 경우를 도시해 놓은 것으로, 이와 같은 실시예에서는 접촉시간을 약 0.5초로 하고, 5곳에다 히터를 설치시켜 놓고 있다.
즉 제5도는 제4도에서의 그의 상태를 측면에서 본 단면도로서, 여기서 리이드프레임(20)은 받침대(50) 위에 올려놓아져 있고, 이 받침대(50)에는 상기 리이드프레임(20)을 냉각시키기 위한 질소혼합개스 분출구멍(52)이 마련되어져 있다.
이는 앞에서 설명한 히터(40)(42)에 의해 리이드전극(250만이 아니라 리이드프레임(20)이 가열되어 납땜층(21)이 녹게되는 것을 방지하기 위해서인 것이다. 또 이와같은 열처리방법은 공기중에서도 이용할 수 있지만, 열이 수반되므로서 구리나 구리합금프레임이 가열과정중 산화되기 때문에 비산화성분위기나 환원성분위기에서 열처리하는 것이 바람직하다. 본 실시예에서는 N2가 90%, H2가 10%비율로 혼합된 개스를 사용하고 있다. 그런데 여기서 사용할 수 있는 비산화성개스로는 불활성개스나 환원성개스 또는 이들의 혼합개스를 사용하면 되는데 그 구체적인 예로서는 불활성개스로서는 아르곤이나 헬륨을 사용하면 되고, 환원성개스로는 수소를 사용하면 된다.
제6도는 반응층을 형성시키기 위한 시간과 온도와의 관계를 나타내는 도표인데 일실시예에서는 접합부(26)의 온도를 400∼450℃로 설정하고, 단속적인 가열시간의 총계를 약 5초로하여 열처리를 하였다. 그러나 실제로는 단속적으로 가열시키는 것에만 한정되지 않고 단순히 가열시간의 총계를 약 5초가 되도록해서 열처리하고 있다.
이상에서는 가열방법으로서 소자를 히터사이에다 끼워 넣어서 가열하는 방법을 설명하였지만 리이드프레임을 다른 방법으로서 접속시킨 다음 약 350∼400℃의 온도로 설정된 수소오븐이나 질소오븐에다 수십초내지 수분동안 통과시켜 가열처리하는 방법도 있다. 또 다른 방법으로는 버너토오치로 접합부(26)을 제외시키면서 리이드전극(25)을 가열하는 방법과, 저항용접기를 사용하여 리이드전극(25)을 가열하는 방법 및, 레이저를 이용하여 리이드전극(25)을 가열하는 방법이 있다. 또 상기한 방법에만 한정되지 않고 제6도중 빗금친 부분을 포함하는 상부의 범위내에서 온도와 시간을 제어하여 가열 할 수 있는 것이라면 상기와 같은 가열방법에 한하지 않은 어떤 방법으로도 가열시킬 수있다.
그런데 상기한 반응층의 조성은 그 상태도 및 반응층의 단면조사에 의하면 Al2Cu, AlCu로 추정된다.
이렇게한 다음에 제7도에 도시한 바와같이, 여기에 모울드처리를 하므로써 반도체소자(22)와 리이드프레임(20), 접합선(23) 및 리이드전극(25)등을 수지제밀봉체(27)를 가지고 밀봉시킴으로서 일체화시킨 반도체장치(30)을 얻을 수 있게되는 것이다.
이와 같이하여 만들어진 반도체장치(30)에서는 접합선(23)과 리이드전극(25)의 접속이 0.2미크론 이상되는 두께를 갖는 반응층을 형성시킴으로서 접속되어지기 때문에 고온조건하에서나 고온·고습도조건하에서도 접합선(23)과 리이드전극(25)의 접합부에서 노출불량이 발생되는 것을 방지할 수가 있고, 그 결과 신뢰성이 높은 반도체장치(30)를 얻을 수 있게 되는 것이다. 또 리이드프레임(20) 및 리이드전극(25)에 도금처리할 필요가 없기 때문에, 제조공정을 간략하게 할 수 있음과 더불어 제조비용을 낮출 수가 있게 되는 것이다.
한편, 알루미늄과 구리 또는 구리합금으로 형성되는 반응층의 두께를 0.2미크론 이상되게 한 것은 다음에 도시하는 실험예에서 명백히 알 수 있듯이, 0.2미크론으로 되지 못하는 경우에는 고온조건하에서나 고온·고습도하에서 노출불량에 의한 불량품이 발생하기 때문인 것이다.
[실험예]
제2도 내지 제5도 및 제7도에 도시되어져 있는 바와 같이 도금층을 형성하고 있지않은 구리 또는 구리합금으로 된 리이드프레임(20)에다 비산화성의 분위기상태에서 반도체소자(22)를 장착시킨 후, 반도체소자(22)의 전극패드(24)와 리이드프레임(20)의 리이드전극(25)사이에 초음파 접합법으로 알루미늄으로 된 접합선(23)을 가설한다.
다음에는 여기에 모울드처리를 해서 그 전체를 수지제봉합체(27)로 봉합시킨 반도체장치(제1실험품)을 제작한다. 이 경우 제8도에 도시된 바와같이, 리이드전극(25)의 표면에는 도금층이 형성되어져 있지 않고 접합선(23)과 리이드전극(25)사이에 반응층이 존재하고 있지 않는다.
리이드프레임(20)을 고온의 환원분위기속에서 충분히 환원시킨 후 제1실험품의 경우와 마찬가지방법으로 반도체소자(22)를 장착시킨 다음에 접합선(23)과 리이드전극을 접합시킴으로써 제2실험품의 반도체장치를 제작했다.
접합선(23)과 리이드전극(25)을 접속시킨 다음 열처리를 하여 제9도에 도시된 바와같이 반응층(60)을 접합선(23)과 리이드전극(25)사이에다 형성 시켜 놓았다는 점 이외에는 제2실험품과 마찬가지 방법으로 반도체장치를 제작했다. 이 경우, 반응층(60)의 두께가 0.1미크론 이하로된 것을 제3실험품이라하고, 0.2∼0.5미크론의 두께를 갖게된 반도체장치를 제4실험품, 0.5∼1미크론의 두께를 갖는 반도체장치를 제5실험품, 1∼2미크론의 두께를 갖는 반도체장치를 제5실험품이라 하였다.
또 제10도에 도시된 바와같이 리이드프레임(20)과 리이드전극(25)위에다 니켈도금층(70)을 미리 형성시켜 놓고서 제2실험품과 같은 방법으로 제작된 반도체장치를 제7실험품이라 하였다.
이와 같이하여 제작된 제1∼제7실험품인 반도체장치 각각 20개씩에 대해 150℃의 온도조건하에서 500시간, 1000시간, 1500시간, 2000시간, 2500시간 이상의 고온방치실험을 하고 아울러 175℃의 온도조건하에서 300시간, 500시간, 1000시간, 1500시간이상의 고온방치실험을 하여 접합선(23)과 리이드전극(25)사이에 노출불량으로 인한 불량품의 발생상황을 조사해 본 결과 아래표와 같은 결과를 얻었다.
[표 1]
Figure kpo00001
윗표면에서 알 수 있듯이, 구리 또는 구리합금과 알루미늄으로 형성되어진 반응층이 클수록 노출불량으로 인한 불량품 발생수가 감소하게되고, 반응층두께가 0.2미크론 이상이 되면 니켈도금층이 있는 반도체와 마찬가지로 높은 신뢰성을 발휘하는 것을 알 수 있었다.
또한 고온·고습도(80℃,90%)상태에서 상기한 제1∼제7실험품을 장시간 방치실험을 한 결과 반응층의 두께가 0.2미크론 이상일때와 마찬가지로 불량품이 발생하지 않는다는 것을 알았고, 또 열충격시험(-45℃←→150℃) 및 열피로 실험에서도 마찬가지 결과를 얻을 수 있었다.
이상에서 설명한 바와같이 본 발명에 따른 접합선의 접속을 개량한 반도체장치와 그 제조방법에 의하면, 고온조건하에서나 고온·고습도 조건하에서 뛰어난 전기적특성을 발휘하는 신뢰성이 높은 반도체장치를 쉽게 제작할 수 있는 장점이 있게되는 것이다.

Claims (12)

  1. 구리 또는 여러가지 구리합금들 중에서 선택된 물질로 된 리이드프레임(20)의 소정영역에 장착시킨 반도체소자와, 상기 리이드프레임(22)에 형성시킨 리이드전극(25), 한쪽끝이 상기 반도체소자의 접합패드(24)에 연결되면서 다른 끝은 리이드전극(25)에 연결되도록 된 접합선(23) 및, 상기 리이드프레임과 상기 리이드 전극의 일부를 외부로 인출시켜지도록 한 상기 반도체소자(22), 상기 접합패드(24) 및 상기 접합선(23)을 봉합하고 있는 수지제봉합체(27)를 구비하고 있는 반도체장치에 있어서, 상기 접합선(23)이 알루미늄으로 되면서 리이드전극(25)과의 접속부인 반응층의 두께가 0.2미크론 이상으로 되어진 것을 특징으로 하는 접합선의 접속을 개량한 반도체 장치.
  2. 반도체소자(22)를 장착시킨 구리 또는 여러가지 구리합금중에서 선택된 물질로 된 리이드프레임(20)의 리이드전극(25)에다 그 한쪽끝이 상기 반도체소자(22)의 전극패드(24)에 접속되어진 접합선(23)의 다른쪽끝을 접속시키는 공정을 갖고 있는 반도체장치의 제조방법에 있어서, 전극패드(24)에다 알루미늄으로 된 접합선(23)의 다른쪽끝을 융착시킴과 더불어 그 융착부에 열처리를 실시해서 상기 구리 또는 여러가지 구리합금중에서 선택된 물질과 상기 알루미늄으로 형성되어진 반응층 두께를 0.2미크론이상되게 하는 공정이 구비된 것을 특징으로 하는 접합선의 접속을 개량한 반도체장치의 제조방법.
  3. 제2항에 있어서, 리이드전극(25)를 히터부재(40)(42)사이에다 끼워넣어 가열처리하도록 된 접합선의 접속을 개량한 반도체장치의 제조방법.
  4. 제3항에 있어서, 히터부재(40)(40)들에 의한 끼워잡혀지는 것이 단속적으로 이루어지게 된 접합선의 접속을 개량한 반도체장치의 제조방법.
  5. 제3항에 있어서, 히터부재(40)(42)로 가열하는 동안 리이드프레임(20)아랫쪽으로부터 비산화성개스가 분출되도록된 접합선의 접속을 개량한 반도체장치의 제조방법.
  6. 제2항에 있어서, 열처리를 수소오븐을 통과시킴으로서 이루어지도록 한 접합선의 접속을 개량한 반도체장치의 제조방법.
  7. 제2항에 있어서, 열처리로서 버너토오치로 접합부를 제외한 리이드전극(25)을 가열함으로서 이루어지도록 한 접합선의 접속을 개량한 반도체장치의 제조방법.
  8. 제2항에 있어서, 열처리가 저항가열장치로 리이드전극(25)을 가열하도록 된 접합선의 접속을 개량한 반도체장치의 제조방법.
  9. 제2항에 있어서, 열처리가 레이저방사선에 의해 접합부(26)을 가열하도록 된 접합선의 접속을 개량한 반도체장치의 제조방법.
  10. 제3항에 있어서, 히터부재(40)(42)에 의한 끼워잡음이 일정시간동안 연속적으로 행하여 지도록 된 접합선의 접속을 개량한 반도체장치의 제조방법.
  11. 제5항에 있어서, 비산화성개스가 불활성개스와 환원성개스 계열로부터 선택된 접합선의 접속을 개량한 반도체장치의 제조방법.
  12. 제11항에 있어서, 불화성개스가 질서와 아르곤 및 헬륨으로 이루어지는 계열로부터 선택된 개스이고, 환원성개스는 수소개스로 된 접합선의 접속을 개량한 반도체장치의 제조방법.
KR1019850006793A 1984-10-09 1985-09-17 접합선의 접속을 개량한 반도체 장치와 그 제조방법 KR900000439B1 (ko)

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CN85107077B (zh) 1988-01-27
DE3581039D1 (de) 1991-02-07
JPS6189643A (ja) 1986-05-07
KR860003655A (ko) 1986-05-28
EP0178170B1 (en) 1991-01-02
CN85107077A (zh) 1986-10-01
EP0178170A2 (en) 1986-04-16
EP0178170A3 (en) 1987-03-25
US4891333A (en) 1990-01-02
JPH0332912B2 (ko) 1991-05-15

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