JPS5889831A - ワイヤボンデイング方法および装置 - Google Patents

ワイヤボンデイング方法および装置

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Publication number
JPS5889831A
JPS5889831A JP56187035A JP18703581A JPS5889831A JP S5889831 A JPS5889831 A JP S5889831A JP 56187035 A JP56187035 A JP 56187035A JP 18703581 A JP18703581 A JP 18703581A JP S5889831 A JPS5889831 A JP S5889831A
Authority
JP
Japan
Prior art keywords
bonding
laser beam
wire
aluminum
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56187035A
Other languages
English (en)
Inventor
Minoru Enomoto
榎本 実
Kazuo Ito
一夫 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56187035A priority Critical patent/JPS5889831A/ja
Publication of JPS5889831A publication Critical patent/JPS5889831A/ja
Pending legal-status Critical Current

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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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    • H01L2224/48505Material at the bonding interface
    • H01L2224/48699Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 本発明はワイヤボンディング方法および装置に関する。
従来、牛導体製品の一造過程においてワイヤボンデ(ン
グを行う場合、たとえばアルミニウムワイヤをボンディ
ングする方式としては超音波振動を用いる方式がある。
ところが、超音波振動によるワイヤボンディング方式は
塑性変形により接合するものであり、ボンディング強度
が比較的弱い上に、超音波振動のため罠比較的長い時間
が要求されるとい5間−がある。
本発明の目的は、前記従来技術の問題点を解消し、強度
の大きいワイヤボンデインクを短時間で得ることのでき
るワイヤボンディング方法および装置を提供することK
ある。
この目的を達成するため、本発明はレーザー光を用いて
ワイヤボンディングを行うものである。
以下、本発明を図面に示す一実施例にしたがってさらに
説明する。
第1図は本発明によるワイヤボンディング装置の要部を
示す概略的部分断面図である。
本実施例において、早導体装置のセラミックパッケージ
lOのベレットボンディング部には、シリコン(81)
よりなるペレット12がボンディングされている。この
ベレッ)12の上KyV!/成されたアルミニウム(A
J)の′11極パッド14とセラミックパッケージlO
のアルミニウムまたは金(Au)のメタライズ層よりな
る導電層16とは、アルミニウムワイヤ18をボンディ
ングすることにより互いに電気的に接続される。
前記アルミニウムワイヤ18はポンディ゛ング機構のボ
ンディングアーム20の先端部に設けられたボンディン
グヘッド22の孔24の中にその先端を挿通されている
本実施例はワイヤボンディングのためにレーザー光を用
いるものであり、前記ボンディングヘッド22の中には
、レーザー発振器26から発生されたレーザー光を導く
ための元ファイバ28の先端部が挿通され、該光フティ
バ28の先端面はボンディングヘッド22の下端面で終
端し、骸先端面からレーザー光をボンディング部に照射
するようになっている。レーザー発振器26はたとえば
パルスレーザ−のように、波長の揃ったコヒーレントな
レーザー光を褪生ずるものである。
また、元フグイパ28の途中には、レーザー発振l!2
6から発生されたレーザー光の出力をたとえばアルミニ
ウムワイヤ18の直径の差等に応じて可変調整するため
の出力調整装置30が設けられている。この出力調整装
置30は、たとえば透過率可変フィルタ、偏向板、ある
いはミラーとレンズの組合せのような適当な構iのもの
を用いることができる。
本実施例によれば、アルミニウムワイヤ18と電極パッ
ド14および導電層16とは、レーザー発振器26から
出力調整装置30を経て元ファイバ28中を矢印の如(
通過してボンディングヘッド22り端面からボンディン
グ部上に出力されるレーザー光により互いに溶着される
(第2図参照)。
その場合、レーザー光の出力の大きさは出力調整装置3
0により常に最適な値に可変調整されているので、常に
強力なワイヤボンディングを得ることができる。したが
って、ワイヤボンディングの信頼性が高められる上に、
非常に短時間で能率良くボンディングすることができる
また、たとえば超音波振動によるワイヤボンディング方
式では、m@変形によるボンディングであり、ワイヤの
ネック部が細くなって切れ易くなる傾向がある。一方、
一本実施例のようにレーザー光を用いる場合には、ワイ
ヤは溶着によりボンディングされるので、ボンディング
強度が大きい上に、ワイヤのネック部が細くなって!れ
易くなるというような間■も生じなく、より高い信頼性
が得られる。
なお、本発明はどのような温式のノ(ツケージよりなる
半導体装置のワイヤボンディングにも適用することがで
きる。
以上説明したように、本発明によれば、レーザー光を用
いることにより、信頼性の高いワイヤボンディングを短
時間で能率良く行うことができる。
【図面の簡単な説明】
第1図は本発明によるワイヤボンディング装置の一実施
例のIIsを示す概略的部分断面図、第2図はワイヤボ
ンディング終了後の状態を示す部分断面図である。 lO・・・セラミックパッケージ1.12・・・ペレッ
ト、14・・・II極バッド、16・・・導電層、18
・・・アルミニウムワイヤ、20・・・ボンディングア
ーム、22・・・ボンディングヘッド、24・・・孔、
26・・・L/ −4−発揚器、2B、・・光ファイバ
、30・・・出力調整装置。 代理人 弁理士  薄 1)利 準

Claims (1)

  1. 【特許請求の範囲】 1、ボンディング部にレーザー光を照射することにより
    ワイヤをボンディングするワイヤボンディング方法。 2、レーザー光を発生するレーザー発振器と、レーザー
    光をボンディング部に導びくレーザー光案内手段と、レ
    ーザー光の出力を調整する出力調整手段と、前記レーず
    一光案内手段をボンディングISK保持する保持手段と
    からなるワイヤボンディング装置。
JP56187035A 1981-11-24 1981-11-24 ワイヤボンデイング方法および装置 Pending JPS5889831A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56187035A JPS5889831A (ja) 1981-11-24 1981-11-24 ワイヤボンデイング方法および装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56187035A JPS5889831A (ja) 1981-11-24 1981-11-24 ワイヤボンデイング方法および装置

Publications (1)

Publication Number Publication Date
JPS5889831A true JPS5889831A (ja) 1983-05-28

Family

ID=16199033

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56187035A Pending JPS5889831A (ja) 1981-11-24 1981-11-24 ワイヤボンデイング方法および装置

Country Status (1)

Country Link
JP (1) JPS5889831A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4891333A (en) * 1984-10-09 1990-01-02 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method thereof
JPH02181451A (ja) * 1989-01-06 1990-07-16 Matsushita Electric Ind Co Ltd ワイヤボンディング装置
EP0947281A3 (de) * 1998-03-30 2000-02-09 F & K Delvotec Bondtechnik GmbH Vorrichtung und Verfahren zum Thermokompressionsbonden
US6501043B1 (en) * 1999-10-22 2002-12-31 Medtronic, Inc. Apparatus and method for laser welding of ribbons

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4891333A (en) * 1984-10-09 1990-01-02 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method thereof
JPH02181451A (ja) * 1989-01-06 1990-07-16 Matsushita Electric Ind Co Ltd ワイヤボンディング装置
EP0947281A3 (de) * 1998-03-30 2000-02-09 F & K Delvotec Bondtechnik GmbH Vorrichtung und Verfahren zum Thermokompressionsbonden
US6501043B1 (en) * 1999-10-22 2002-12-31 Medtronic, Inc. Apparatus and method for laser welding of ribbons

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