KR860003655A - 반도체장치와 그 제조방법 - Google Patents

반도체장치와 그 제조방법 Download PDF

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Publication number
KR860003655A
KR860003655A KR1019850006793A KR850006793A KR860003655A KR 860003655 A KR860003655 A KR 860003655A KR 1019850006793 A KR1019850006793 A KR 1019850006793A KR 850006793 A KR850006793 A KR 850006793A KR 860003655 A KR860003655 A KR 860003655A
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South Korea
Prior art keywords
semiconductor device
manufacturing
connection
junction line
lead electrode
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KR1019850006793A
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English (en)
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KR900000439B1 (ko
Inventor
히로유끼(외 1) 바바
다까시 마쓰자끼
Original Assignee
사바 쇼오이찌
가부시끼 가이샤 도오시바
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Publication of KR860003655A publication Critical patent/KR860003655A/ko
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Publication of KR900000439B1 publication Critical patent/KR900000439B1/ko

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    • H—ELECTRICITY
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    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/22—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded
    • B23K20/233—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer
    • B23K20/2333—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer one layer being aluminium, magnesium or beryllium
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Abstract

내용 없음

Description

반도체장치와 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도 내지 제5도 및 제7도는 본 발명의 제조방법을 공정순으로 도시한 설명도.

Claims (13)

  1. 구리 또는 여러가지 구리합금들 중에서 선택된 물질로 된 리이드프레임(20)의 소정영역에 장착시킨 반도체소자와, 상기 리이드프레임(22)에 형성시킨 리이드전극(25), 한쪽끝이 상기 반도체소자의 접합패드(24)에 연결되면서 다른 끝은 리이드전극(25)에 연결되도록 된 접합선(23) 및, 상기 리이드프레임과 상기 리이드 전극의 일부를 외부로 인출시켜지도록 한 상기 반도체소자(22), 상기 접합패드(24) 및 상기 접합선(23)을 봉합하고 있는 수지제봉합체(27)를 구비하고 있는 반도체장치에 있어서, 상기 접합선(23)이 알루미늄으로 되면서 리이드전극(25)과의 접속부인 반응층의 두께가 0.2미크론 이상으로 되어진 것을 특징으로 하는 접합선의 접속을 개량한 반도체 장치.
  2. 반도체소자(22)를 장착시킨 구리 또는 여러가지 구리합금중에서 선택된 물질로 된 리이드프레임(20)의 리이드전극(25)에다 그 한쪽끝이 상기 반도체소자(22)의 전극패드(24)에 접속되어진 접합선(23)의 다른쪽끝을 접속시키는 공정을 갖고 있는 반도체장치의 제조방법에 있어서, 전극패드(24)에다 알루미늄으로 된 접합선(23)의 다른쪽끝을 융착시킴과 더불어 그 융착부에 열처리를 실시해서 상기 구리 또는 여러가지 구리합금중에서 선택된 물질과 상기 알루미늄으로 형성되어진 반응층 두께를 0.2미크론이상되게 하는 공정이 구비된 것을 특징으로 하는 접합선의 접속을 개량한 반도체장치의 제조방법.
  3. 제2항에 있어서, 리이드전극(25)를 히터부재(40)(42)사이에다 끼워넣어 가열처리하도록 된 접합선의 접속을 개량한 반도체장치의 제조방법.
  4. 제3항에 있어서, 히터부재(40)(40)들에 의한 끼워잡혀지는 것이 단속적으로 이루어지게 된 접합선의 접속을 개량한 반도체장치의 제조방법.
  5. 제3항에 있어서, 히터부재(40)(42)로 가열하는 동안 리이드프레임(20)아랫쪽으로부터 비산화성개스가 분출되도록된 접합선의 접속을 개량한 반도체장치의 제조방법.
  6. 제2항에 있어서, 열처리를 수소오븐을 통과시킴으로서 이루어지도록 한 접합선의 접속을 개량한 반도체장치의 제조방법.
  7. 제2항에 있어서, 열처리로서 버너토오치로 접합부를 제외한 리이드전극(25)을 가열함으로서 이루어지도록 한 접합선의 접속을 개량한 반도체장치의 제조방법.
  8. 제2항에 있어서, 열처리가 저항가열장치로 리이드전극(25)을 가열하도록 된 접합선의 접속을 개량한 반도체장치의 제조방법.
  9. 제2항에 있어서, 열처리가 레이저방사선에 의해 접합부(26)을 가열하도록 된 접합선의 접속을 개량한 반도체장치의 제조방법.
  10. 제3항에 있어서, 히터부재(40)(42)에 의한 끼워잡음이 일정시간동안 연속적으로 행하여 지도록 된 접합선의 접속을 개량한 반도체장치의 제조방법.
  11. 제5항에 있어서, 비산화성개스가 불활성개스와 환원성개스 계열로부터 선택된 접합선의 접속을 개량한 반도체장치의 제조방법.
  12. 제11항에 있어서, 불화성개스가 질서와 아르곤 및 헬륨으로 이루어지는 계열로부터 선택된 개스이고, 환원성개스는 수소개스로 된 접합선의 접속을 개량한 반도체장치의 제조방법.
  13. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019850006793A 1984-10-09 1985-09-17 접합선의 접속을 개량한 반도체 장치와 그 제조방법 KR900000439B1 (ko)

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US4891333A (en) 1990-01-02
KR900000439B1 (ko) 1990-01-30
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