JPH05166871A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPH05166871A
JPH05166871A JP3331686A JP33168691A JPH05166871A JP H05166871 A JPH05166871 A JP H05166871A JP 3331686 A JP3331686 A JP 3331686A JP 33168691 A JP33168691 A JP 33168691A JP H05166871 A JPH05166871 A JP H05166871A
Authority
JP
Japan
Prior art keywords
wire
semiconductor device
resin
chip
tab
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3331686A
Other languages
English (en)
Inventor
Manabu Tsukamoto
学 塚本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Renesas Eastern Japan Semiconductor Inc
Original Assignee
Hitachi Ltd
Hitachi Tohbu Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Tohbu Semiconductor Ltd filed Critical Hitachi Ltd
Priority to JP3331686A priority Critical patent/JPH05166871A/ja
Publication of JPH05166871A publication Critical patent/JPH05166871A/ja
Pending legal-status Critical Current

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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
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    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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Abstract

(57)【要約】 【目的】耐質性の向上した樹脂封止型の半導体装置を提
供することにある。 【構成】リードと半導体チップとを接続するワイヤに凹
凸形状とした樹脂被覆を形成した半導体装置とする。 【効果】封止樹脂と被覆との密着性が上がり耐質性が向
上する。

Description

【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は半導体装置の構成に係
り、特に樹脂により封止される半導体装置に適用されて
有効な技術に関するものである。
【０００２】
【従来の技術】一般に半導体装置の封止方法について
は、セラミックパッケージによるものと、リードフレー
ムに半導体チップを取り付け、トランスファモールドに
より封止する樹脂封止タイプのものがある。このような
もののなかで樹脂封止タイプのものはその耐湿性向上の
ため様々な構成が取られている。また多ピン化によるワ
イヤの増加から発生するワイヤ間ショートを防止するた
めに各ワイヤに被覆を施す技術も最近行われている。
【０００３】このようなもののうち耐湿性向上のためリ
ードフレームに溝を設けたものを示したものとして特開
平１−２４３５６９号がある。また被覆ワイヤを使用し
た半導体装置を示したものとして特開昭６３−２６９５
３９号がある。
【０００４】
【発明が解決しようとする課題】しかし、上記した手段
に用いた半導体装置においてプリント基板等に半導体装
置を実装する場合に使用される赤外線リフローといった
方法において、半導体装置が加熱されると、それぞれの
部分が膨張し、熱膨張係数の違いから特に封止樹脂とリ
ードとの間に僅かながら離間し隙間が形成される。その
結果この部分に水分が侵入しやすくなり、侵入した水分
はリードを伝いさらにワイヤに到達しやがては半導体チ
ップ上のＡｌ等で形成されたパッドに到達しパッドを腐
食させ、その結果半導体装置の断線不良を発生させると
いう問題があった。本発明者はこのような腐食メカニズ
ムを調査中に被覆されたワイヤを使用した半導体装置に
比較して通常のワイヤを使用したものの腐食が早いこと
を発見した。そして検討の結果このような被覆されたワ
イヤを使用したものが耐湿性に良好な結果を示す理由は
ＡｕあるいはＣｕ等のワイヤと樹脂封止体との間に形成
されている樹脂皮膜が、赤外線リフローといった工程で
発生する熱ストレスを受ける場合において、ワイヤと樹
脂封止体との間でクッション材となり離間しないことか
ら隙間を発生させないためであることがわかった。
【０００５】本発明の目的はこのような被覆ワイヤを使
用した半導体装置の耐湿性の利点を利用しさらに優れた
耐湿性を有する半導体装置を提供することにある。
【０００６】
【課題を解決するための手段】本願において開示される
発明のうち代表的なものの概要について説明すれば下記
のとおりである。
【０００７】すなわち、ワイヤにより半導体チップとリ
ードを接続し樹脂により封止する半導体装置において、
前記ワイヤに凹凸を有する樹脂の被覆膜が形成されてな
る半導体装置である。またはワイヤに凹凸を有すること
により表面の樹脂被覆を凹凸形状とした半導体装置であ
る。
【０００８】
【作用】上記した手段によれば、従来の被覆ワイヤに比
較し、ワイヤと樹脂の密着性を大幅に向上することが可
能となるため、通常リードからワイヤを伝い半導体チッ
プ上に到達する水分の侵入をワイヤにて防止することが
可能と成る。
【０００９】
【実施例】図１は本発明の半導体装置の断面図およびそ
の部分拡大図である。
【００１０】図１に示したように本発明の半導体装置
は、銅あるいは鉄系の材料からなるタブ１およびリード
３とからなるリードフレームを使用しており、前記タブ
１上に導電性接着剤等により取付けられた半導体チップ
２と前記半導体チップ２上に形成された電極とリード３
を接続するワイヤ５と前記タブ、半導体チップ、リード
の一部およびワイヤを包囲し封止する樹脂封止体４とか
らなる。
【００１１】前記ワイヤ５はＡｕあるいはＣｕ等からな
り、その周囲には表面を凹凸形状に形成されたポリイミ
ド樹脂系の絶縁皮膜６が被覆されている。このワイヤ５
は直径２５ｕｍ〜３５ｕｍのものが使用され、被覆され
た絶縁膜６は膜表面から膜凸部の高い部分までおよそ５
ｕｍ程度となるようにに形成されている。
【００１２】本実施例においては、このような被覆ワイ
ヤを用いる他は従来の半導体装置とどうような製造方法
を用いることができる。
【００１３】
【実施例２】図２は本発明の第２の実施例である半導体
装置に使用するワイヤを示した断面図である。
【００１４】本実施例においてはＡｕあるいはＣｕ等で
形成されたワイヤ７に溝７ａを形成することにより、そ
の上面にポリイミド系の樹脂皮膜６を凹凸形状としたも
のである。その他の工程については前記第１の実施例と
同様なものを使用することができる。
【００１５】
【実施例３】図３は本発明の第３の実施例である半導体
装置に使用するワイヤを示した断面図である。
【００１６】本実施例においてはＡｕあるいはＣｕ等で
形成されたワイヤ８に凹部８ａを形成することにより、
その上面にポリイミド系の樹脂皮膜６を凹凸形状とした
ものである。その他の工程については前記第１の実施例
と同様なものを使用することができる。
【００１７】
【発明の効果】本願において開示される発明のうち代表
的なものによって得られるものの効果を記載すれば下記
のとおりである。
【００１８】すなわち半導体チップとリードを接続する
ワイヤに絶縁皮膜を形成し、さらにその形状を凹凸とす
ることにより樹脂封止体とワイヤの密着性を向上させる
ことが可能となり、半導体装置の信頼性を大幅に向上さ
せることが可能となる。
【００１９】以上、本願発明者によってなされた発明を
本願の背景となった技術に基ずいて説明したが本願は前
記実施例に限定されることなく種々変更可能であること
は言うまでもない。すなわち被覆する樹脂を凹凸形状と
する手段は、例えば樹脂を発砲させ、ワイヤを被覆する
ようにしてもかまわないし、または他の手段を用いても
かまわない。被覆した樹脂を凹凸形状とするものならど
んなものでもで使用することが可能である。
【図面の簡単な説明】
【図１】図１は本発明の半導体装置の断面図およびその
部分拡大図である。
【図２】図２は本発明の第２の実施例である半導体装置
に使用するワイヤを示した断面図である。
【図３】図３は本発明の第３の実施例である半導体装置
に使用するワイヤを示した断面図である。
【符号の説明】
１．．タブ、２．．半導体チップ、３．．リード、
４．．樹脂封止体、５、７、８．．ワイヤ、６．．絶縁
皮膜、７ａ．．溝、８ａ．．凹部、
【符号の説明】

Claims (2)

    【特許請求の範囲】
  1. 【請求項１】タブとリードと前記タブに取付けられたチ
    ップと前記チップとリードを接続するワイヤと前記タ
    ブ、チップ、ワイヤおよびリードの一部を覆う封止体と
    から成る半導体装置において、前記ワイヤは凹凸を有す
    る樹脂により被覆されてなることを特徴とする半導体装
    置。
  2. 【請求項２】タブとリードと前記タブに取付けられたチ
    ップと前記チップとリードを接続するワイヤと前記タ
    ブ、チップ、ワイヤおよびリードの一部を覆う封止体と
    から成る半導体装置において、前記ワイヤは凹凸を有し
    その上面が樹脂により被覆されて成ることを特徴とする
    半導体装置。
JP3331686A 1991-12-16 1991-12-16 半導体装置 Pending JPH05166871A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3331686A JPH05166871A (ja) 1991-12-16 1991-12-16 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3331686A JPH05166871A (ja) 1991-12-16 1991-12-16 半導体装置

Publications (1)

Publication Number Publication Date
JPH05166871A true JPH05166871A (ja) 1993-07-02

Family

ID=18246448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3331686A Pending JPH05166871A (ja) 1991-12-16 1991-12-16 半導体装置

Country Status (1)

Country Link
JP (1) JPH05166871A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6849930B2 (en) 2000-08-31 2005-02-01 Nec Corporation Semiconductor device with uneven metal plate to improve adhesion to molding compound
JP2012174996A (ja) * 2011-02-23 2012-09-10 Fujitsu Ltd 半導体装置及び半導体装置の製造方法
CN114695300A (zh) * 2020-12-28 2022-07-01 丁肇诚 具有包覆层之导线的半导体元件及其制作方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6849930B2 (en) 2000-08-31 2005-02-01 Nec Corporation Semiconductor device with uneven metal plate to improve adhesion to molding compound
JP2012174996A (ja) * 2011-02-23 2012-09-10 Fujitsu Ltd 半導体装置及び半導体装置の製造方法
CN114695300A (zh) * 2020-12-28 2022-07-01 丁肇诚 具有包覆层之导线的半导体元件及其制作方法

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