KR102718309B1 - 투과성 메타표면 렌즈 통합 - Google Patents
투과성 메타표면 렌즈 통합 Download PDFInfo
- Publication number
- KR102718309B1 KR102718309B1 KR1020207008795A KR20207008795A KR102718309B1 KR 102718309 B1 KR102718309 B1 KR 102718309B1 KR 1020207008795 A KR1020207008795 A KR 1020207008795A KR 20207008795 A KR20207008795 A KR 20207008795A KR 102718309 B1 KR102718309 B1 KR 102718309B1
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- metasurface
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- hard mask
- layer
- array
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0916—Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0916—Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers
- G02B27/0922—Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers the semiconductor light source comprising an array of light emitters
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0927—Systems for changing the beam intensity distribution, e.g. Gaussian to top-hat
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/1006—Beam splitting or combining systems for splitting or combining different wavelengths
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/106—Beam splitting or combining systems for splitting or combining a plurality of identical beams or images, e.g. image replication
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/12—Beam splitting or combining systems operating by refraction only
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/12—Beam splitting or combining systems operating by refraction only
- G02B27/123—The splitting element being a lens or a system of lenses, including arrays and surfaces with refractive power
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4274—Electrical aspects
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4274—Electrical aspects
- G02B6/428—Electrical aspects containing printed circuit boards [PCB]
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- H01L27/14625—
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- H01L31/02327—
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- H01L33/58—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0085—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for modulating the output, i.e. the laser beam is modulated outside the laser cavity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
- Polarising Elements (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Light Guides In General And Applications Therefor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020247033969A KR102881023B1 (ko) | 2017-08-31 | 2018-08-31 | 투과성 메타표면 렌즈 통합 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762552455P | 2017-08-31 | 2017-08-31 | |
| US62/552,455 | 2017-08-31 | ||
| PCT/US2018/049276 WO2019046827A1 (en) | 2017-08-31 | 2018-08-31 | INTEGRATION OF TRANSMISSIVE METASURFACE LENS |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247033969A Division KR102881023B1 (ko) | 2017-08-31 | 2018-08-31 | 투과성 메타표면 렌즈 통합 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20200047612A KR20200047612A (ko) | 2020-05-07 |
| KR102718309B1 true KR102718309B1 (ko) | 2024-10-15 |
Family
ID=65435063
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020207008795A Active KR102718309B1 (ko) | 2017-08-31 | 2018-08-31 | 투과성 메타표면 렌즈 통합 |
| KR1020247033969A Active KR102881023B1 (ko) | 2017-08-31 | 2018-08-31 | 투과성 메타표면 렌즈 통합 |
| KR1020257036418A Pending KR20250159740A (ko) | 2017-08-31 | 2018-08-31 | 투과성 메타표면 렌즈 통합 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247033969A Active KR102881023B1 (ko) | 2017-08-31 | 2018-08-31 | 투과성 메타표면 렌즈 통합 |
| KR1020257036418A Pending KR20250159740A (ko) | 2017-08-31 | 2018-08-31 | 투과성 메타표면 렌즈 통합 |
Country Status (8)
| Country | Link |
|---|---|
| US (5) | US10795168B2 (https=) |
| EP (1) | EP3676973A4 (https=) |
| JP (3) | JP7461294B2 (https=) |
| KR (3) | KR102718309B1 (https=) |
| CN (2) | CN119781177A (https=) |
| CA (1) | CA3074566A1 (https=) |
| SG (1) | SG11202001717VA (https=) |
| WO (1) | WO2019046827A1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12411348B2 (en) | 2017-08-31 | 2025-09-09 | Metalenz, Inc. | Transmissive metasurface lens integration |
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| US11366296B2 (en) * | 2015-11-24 | 2022-06-21 | President And Fellows Of Harvard College | Atomic layer deposition process for fabricating dielectric metasurfaces for wavelengths in the visible spectrum |
| GB2578236B (en) | 2017-05-24 | 2022-11-09 | Univ Columbia | Broadband achromatic flat optical components by dispersion-engineered dielectric metasurfaces |
| EP3451027A1 (en) * | 2017-09-01 | 2019-03-06 | Thomson Licensing | Optical device capable of providing at least two different optical functions |
| US11016227B2 (en) | 2017-09-18 | 2021-05-25 | Lumentum Operations Llc | Diffractive optical element |
| KR102444288B1 (ko) * | 2017-11-08 | 2022-09-16 | 삼성전자주식회사 | 메타 렌즈를 포함하는 프로젝터 |
| US11874480B2 (en) * | 2017-12-20 | 2024-01-16 | The Regents Of The University Of Michigan | Plasmonic lithography for patterning high aspect-ratio nanostructures |
| KR102763012B1 (ko) | 2018-01-24 | 2025-02-07 | 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 | 메타표면을 이용한 편광 상태 생성 |
| US11353626B2 (en) | 2018-02-05 | 2022-06-07 | Samsung Electronics Co., Ltd. | Meta illuminator |
| US11222987B2 (en) * | 2018-03-21 | 2022-01-11 | Intel Corporation | Optical receiver employing a metasurface collection lens having concentric belts or rings |
| WO2019217794A1 (en) * | 2018-05-11 | 2019-11-14 | The Regents Of The University Of California | Oxide spacer hcg vcsels and fabrication methods |
| US11971485B2 (en) * | 2018-06-19 | 2024-04-30 | Analog Devices, Inc. | Metasurface array for lidar systems |
| SG11202013228XA (en) | 2018-07-02 | 2021-01-28 | Metalenz Inc | Metasurfaces for laser speckle reduction |
| US11333798B2 (en) * | 2018-07-06 | 2022-05-17 | The Regents Of The University Of Michigan | Compound metaoptics for amplitude and phase control of wavefronts |
| US10564330B2 (en) * | 2018-12-21 | 2020-02-18 | Intel Corporation | Metasurface devices for display and photonics devices |
| US12105251B2 (en) * | 2019-03-29 | 2024-10-01 | Sony Group Corporation | Metalens portion, electronic device and method |
| US11430919B2 (en) * | 2019-04-26 | 2022-08-30 | Lumileds Llc | High brightness LEDs with non-specular nanostructured thin film reflectors |
| US11385450B2 (en) | 2019-05-03 | 2022-07-12 | California Institute Of Technology | Metasurface imager for quantitative phase gradient detection |
| CN111913241B (zh) | 2019-05-07 | 2024-06-11 | 三星电子株式会社 | 超透镜和包括超透镜的光学装置 |
| CN111913243A (zh) * | 2019-05-08 | 2020-11-10 | 北庭星云科技(北京)有限公司 | 用于制造一个或多个纳米滤光超表面元件或系统的方法 |
| KR102930180B1 (ko) * | 2019-06-05 | 2026-02-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 편평한 광학 디바이스들에 대한 애퍼처들 |
| JP7648548B2 (ja) * | 2019-06-18 | 2025-03-18 | １０６４４１３７ カナダ インコーポレイテッド | メタ表面を使用する発光装置及びその発光方法 |
| JP7319106B2 (ja) * | 2019-06-28 | 2023-08-01 | 株式会社ミツトヨ | 格子部品およびその製造方法 |
| US11711600B2 (en) | 2019-07-09 | 2023-07-25 | Samsung Electronics Co., Ltd. | Meta-optical device and optical apparatus including the same |
| US20220260754A1 (en) * | 2019-07-10 | 2022-08-18 | Sony Semiconductor Solutions Corporation | Imaging apparatus and method for manufacturing the same |
| KR20220035971A (ko) * | 2019-07-26 | 2022-03-22 | 메탈렌츠 인코포레이티드 | 개구-메타 표면 및 하이브리드 굴절-메타 표면 이미징 시스템 |
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| US11675219B1 (en) * | 2019-12-06 | 2023-06-13 | The Trustees Of Columbia University In The City Of New York | Multifunctional resonant and leaky-wave metasurfaces based on symmetry-breaking perturbations |
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