KR101697054B1 - 멀티플렉싱된 히터 어레이에 대한 폴트 검출 방법 - Google Patents

멀티플렉싱된 히터 어레이에 대한 폴트 검출 방법 Download PDF

Info

Publication number
KR101697054B1
KR101697054B1 KR1020167004874A KR20167004874A KR101697054B1 KR 101697054 B1 KR101697054 B1 KR 101697054B1 KR 1020167004874 A KR1020167004874 A KR 1020167004874A KR 20167004874 A KR20167004874 A KR 20167004874A KR 101697054 B1 KR101697054 B1 KR 101697054B1
Authority
KR
South Korea
Prior art keywords
power
power supply
heater zones
lines
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020167004874A
Other languages
English (en)
Korean (ko)
Other versions
KR20160025635A (ko
Inventor
하르미트 싱
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20160025635A publication Critical patent/KR20160025635A/ko
Application granted granted Critical
Publication of KR101697054B1 publication Critical patent/KR101697054B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H10P74/00—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/023—Industrial applications
    • H05B1/0233—Industrial applications for semiconductors manufacturing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H10P72/0434—
    • H10P72/0616—

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Control Of Resistance Heating (AREA)
  • Plasma & Fusion (AREA)
  • Surface Heating Bodies (AREA)
  • Investigating Or Analyzing Materials Using Thermal Means (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
KR1020167004874A 2010-10-22 2011-09-28 멀티플렉싱된 히터 어레이에 대한 폴트 검출 방법 Active KR101697054B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/910,347 2010-10-22
US12/910,347 US8791392B2 (en) 2010-10-22 2010-10-22 Methods of fault detection for multiplexed heater array
PCT/US2011/053558 WO2012054198A2 (en) 2010-10-22 2011-09-28 Methods of fault detection for multiplexed heater array

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020137010294A Division KR101599339B1 (ko) 2010-10-22 2011-09-28 멀티플렉싱된 히터 어레이에 대한 폴트 검출 방법

Publications (2)

Publication Number Publication Date
KR20160025635A KR20160025635A (ko) 2016-03-08
KR101697054B1 true KR101697054B1 (ko) 2017-01-16

Family

ID=45972080

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020167004874A Active KR101697054B1 (ko) 2010-10-22 2011-09-28 멀티플렉싱된 히터 어레이에 대한 폴트 검출 방법
KR1020137010294A Active KR101599339B1 (ko) 2010-10-22 2011-09-28 멀티플렉싱된 히터 어레이에 대한 폴트 검출 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020137010294A Active KR101599339B1 (ko) 2010-10-22 2011-09-28 멀티플렉싱된 히터 어레이에 대한 폴트 검출 방법

Country Status (7)

Country Link
US (2) US8791392B2 (enExample)
JP (2) JP5925789B2 (enExample)
KR (2) KR101697054B1 (enExample)
CN (2) CN103168345B (enExample)
SG (2) SG10201508636RA (enExample)
TW (1) TWI541517B (enExample)
WO (1) WO2012054198A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240022059A (ko) * 2022-08-10 2024-02-20 세메스 주식회사 히터 상태 감지 시스템 및 방법

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8637794B2 (en) 2009-10-21 2014-01-28 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
SG180882A1 (en) 2009-12-15 2012-07-30 Lam Res Corp Adjusting substrate temperature to improve cd uniformity
US8791392B2 (en) * 2010-10-22 2014-07-29 Lam Research Corporation Methods of fault detection for multiplexed heater array
US8546732B2 (en) 2010-11-10 2013-10-01 Lam Research Corporation Heating plate with planar heater zones for semiconductor processing
US9307578B2 (en) 2011-08-17 2016-04-05 Lam Research Corporation System and method for monitoring temperatures of and controlling multiplexed heater array
KR101831439B1 (ko) * 2011-08-30 2018-02-22 와틀로 일렉트릭 매뉴팩츄어링 컴파니 열 어레이 제어 시스템 및 방법
US10388493B2 (en) 2011-09-16 2019-08-20 Lam Research Corporation Component of a substrate support assembly producing localized magnetic fields
US9324589B2 (en) * 2012-02-28 2016-04-26 Lam Research Corporation Multiplexed heater array using AC drive for semiconductor processing
US8809747B2 (en) 2012-04-13 2014-08-19 Lam Research Corporation Current peak spreading schemes for multiplexed heated array
US9984866B2 (en) * 2012-06-12 2018-05-29 Component Re-Engineering Company, Inc. Multiple zone heater
US10049948B2 (en) 2012-11-30 2018-08-14 Lam Research Corporation Power switching system for ESC with array of thermal control elements
US9538583B2 (en) * 2013-01-16 2017-01-03 Applied Materials, Inc. Substrate support with switchable multizone heater
US10217615B2 (en) 2013-12-16 2019-02-26 Lam Research Corporation Plasma processing apparatus and component thereof including an optical fiber for determining a temperature thereof
US9435692B2 (en) 2014-02-05 2016-09-06 Lam Research Corporation Calculating power input to an array of thermal control elements to achieve a two-dimensional temperature output
US9589853B2 (en) 2014-02-28 2017-03-07 Lam Research Corporation Method of planarizing an upper surface of a semiconductor substrate in a plasma etch chamber
JP6219227B2 (ja) * 2014-05-12 2017-10-25 東京エレクトロン株式会社 ヒータ給電機構及びステージの温度制御方法
JP6219229B2 (ja) * 2014-05-19 2017-10-25 東京エレクトロン株式会社 ヒータ給電機構
US9543171B2 (en) * 2014-06-17 2017-01-10 Lam Research Corporation Auto-correction of malfunctioning thermal control element in a temperature control plate of a semiconductor substrate support assembly that includes deactivating the malfunctioning thermal control element and modifying a power level of at least one functioning thermal control element
JP6513938B2 (ja) * 2014-11-21 2019-05-15 日本特殊陶業株式会社 静電チャックの製造方法
US9872341B2 (en) * 2014-11-26 2018-01-16 Applied Materials, Inc. Consolidated filter arrangement for devices in an RF environment
US10763142B2 (en) 2015-06-22 2020-09-01 Lam Research Corporation System and method for determining field non-uniformities of a wafer processing chamber using a wafer processing parameter
US9779974B2 (en) 2015-06-22 2017-10-03 Lam Research Corporation System and method for reducing temperature transition in an electrostatic chuck
US9864361B2 (en) 2015-06-22 2018-01-09 Lam Research Corporation Flexible temperature compensation systems and methods for substrate processing systems
US10386821B2 (en) 2015-06-22 2019-08-20 Lam Research Corporation Systems and methods for calibrating scalar field contribution values for a limited number of sensors including a temperature value of an electrostatic chuck and estimating temperature distribution profiles based on calibrated values
US10381248B2 (en) 2015-06-22 2019-08-13 Lam Research Corporation Auto-correction of electrostatic chuck temperature non-uniformity
US9960009B2 (en) * 2015-07-17 2018-05-01 Lam Research Corporation Methods and systems for determining a fault in a gas heater channel
US10690414B2 (en) * 2015-12-11 2020-06-23 Lam Research Corporation Multi-plane heater for semiconductor substrate support
KR102423818B1 (ko) 2015-12-18 2022-07-21 삼성전자주식회사 정전척 어셈블리 및 그를 포함하는 반도체 제조장치, 그리고 정전척 온도 측정방법
JP6226092B2 (ja) * 2016-03-14 2017-11-08 Toto株式会社 静電チャック
DE102017002875B4 (de) 2016-03-30 2018-11-29 Ngk Insulators, Ltd. Übergangsmetalloxid-enthaltende Cerdioxidteilchen
KR102360248B1 (ko) * 2016-05-10 2022-02-07 램 리써치 코포레이션 상이한 히터 트레이스 재료를 사용한 적층된 히터
US10340171B2 (en) 2016-05-18 2019-07-02 Lam Research Corporation Permanent secondary erosion containment for electrostatic chuck bonds
US11069553B2 (en) * 2016-07-07 2021-07-20 Lam Research Corporation Electrostatic chuck with features for preventing electrical arcing and light-up and improving process uniformity
JP6238097B1 (ja) * 2016-07-20 2017-11-29 Toto株式会社 静電チャック
US10366867B2 (en) 2016-08-19 2019-07-30 Applied Materials, Inc. Temperature measurement for substrate carrier using a heater element array
US20180053666A1 (en) 2016-08-19 2018-02-22 Applied Materials, Inc. Substrate carrier with array of independently controllable heater elements
JP2018063974A (ja) * 2016-10-11 2018-04-19 東京エレクトロン株式会社 温度制御装置、温度制御方法、および載置台
US10910195B2 (en) 2017-01-05 2021-02-02 Lam Research Corporation Substrate support with improved process uniformity
KR102435888B1 (ko) * 2017-07-04 2022-08-25 삼성전자주식회사 정전 척, 기판 처리 장치 및 그를 이용한 반도체 소자의 제조방법
DE102018101010B4 (de) * 2017-09-25 2025-01-09 X-Fab Semiconductor Foundries Ag Echtzeit Monitoring eines Mehrzonen-Vertikalofens mit frühzeitiger Erkennung eines Ausfalls eines Heizzonen-Elements
TWI688033B (zh) * 2017-11-13 2020-03-11 萬潤科技股份有限公司 載台
CN212365925U (zh) * 2017-11-21 2021-01-15 沃特洛电气制造公司 一种支撑基座
EP3492935B1 (en) * 2017-12-01 2021-08-11 Mitsubishi Electric R&D Centre Europe B.V. Health monitoring of power semiconductor device
CN110646684B (zh) * 2018-06-27 2022-06-14 北京北方华创微电子装备有限公司 加热器故障检测装置及方法、加热系统、半导体加工设备
US11183400B2 (en) * 2018-08-08 2021-11-23 Lam Research Corporation Progressive heating of components of substrate processing systems using TCR element-based heaters
CN110873609B (zh) * 2018-08-31 2021-04-30 德运创鑫(北京)科技有限公司 加热设备故障检测方法与具有故障检测功能的加热系统
KR20250035029A (ko) * 2018-10-31 2025-03-11 램 리써치 코포레이션 히터 어레이 고장 (failure) 의 식별 및 보상
TW202437459A (zh) * 2018-12-07 2024-09-16 美商蘭姆研究公司 用於具有多工加熱器陣列之靜電卡盤的長壽命延伸溫度範圍嵌入式二極體設計
KR102410816B1 (ko) * 2018-12-12 2022-06-21 주식회사 원익아이피에스 기판 처리 장치 및 이를 이용한 제어 방법
CN111383894B (zh) * 2018-12-29 2022-12-30 中微半导体设备(上海)股份有限公司 一种等离子处理器以及静电夹盘加热方法
CN111385917B (zh) * 2018-12-29 2022-07-15 中微半导体设备(上海)股份有限公司 一种用于组装esc的多平面多路可调节温度的加热器
KR20230030684A (ko) * 2021-08-25 2023-03-07 세메스 주식회사 지지 유닛 및 기판 처리 장치
KR102654890B1 (ko) * 2021-08-27 2024-04-05 세메스 주식회사 기판 처리 장치 및 발열체의 온도 제어 방법
US20230158573A1 (en) * 2021-11-19 2023-05-25 Xerox Corporation Metal drop ejecting three-dimensional (3d) object printer having an improved heated build platform
KR102844317B1 (ko) 2023-12-13 2025-08-08 주식회사 에스지에스코리아 히터 시스템 및 히터 전류의 측정 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004319953A (ja) 2003-03-31 2004-11-11 Kokusai Electric Semiconductor Service Inc ヒータ検査装置及びそれを搭載した半導体製造装置

Family Cites Families (161)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3440883A (en) 1966-12-01 1969-04-29 Monsanto Co Electronic semiconductor thermometer
US3752956A (en) * 1972-05-03 1973-08-14 Du Pont Electrical resistance heating control circuit
JPS601918A (ja) 1983-06-17 1985-01-08 Fuji Electric Co Ltd マトリツクス形選択回路
JPS621176A (ja) 1985-06-26 1987-01-07 Hitachi Ltd ヘツド支持装置
JPS6298610A (ja) 1985-10-25 1987-05-08 Hitachi Ltd 結晶成長用基板加熱機構
US5536918A (en) 1991-08-16 1996-07-16 Tokyo Electron Sagami Kabushiki Kaisha Heat treatment apparatus utilizing flat heating elements for treating semiconductor wafers
FR2682253A1 (fr) 1991-10-07 1993-04-09 Commissariat Energie Atomique Sole chauffante destinee a assurer le chauffage d'un objet dispose a sa surface et reacteur de traitement chimique muni de ladite sole.
US5255520A (en) 1991-12-20 1993-10-26 Refir Technologies Advanced thermoelectric heating and cooling system
JP3440475B2 (ja) 1992-06-29 2003-08-25 アイシン精機株式会社 人体局部洗浄装置
US5414245A (en) 1992-08-03 1995-05-09 Hewlett-Packard Corporation Thermal-ink heater array using rectifying material
DE4231702C2 (de) 1992-09-22 1995-05-24 Litef Gmbh Thermoelektrische, beheizbare Kühlkammer
KR100290748B1 (ko) 1993-01-29 2001-06-01 히가시 데쓰로 플라즈마 처리장치
US5591269A (en) * 1993-06-24 1997-01-07 Tokyo Electron Limited Vacuum processing apparatus
JPH0778668A (ja) * 1993-09-07 1995-03-20 Fanuc Ltd ヒータ装置の異常検出装置
US5504471A (en) 1993-09-16 1996-04-02 Hewlett-Packard Company Passively-multiplexed resistor array
JP2647799B2 (ja) * 1994-02-04 1997-08-27 日本碍子株式会社 セラミックスヒーター及びその製造方法
JPH08130184A (ja) * 1994-10-31 1996-05-21 Sony Corp 熱処理装置
JP3257328B2 (ja) 1995-03-16 2002-02-18 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
US5667622A (en) 1995-08-25 1997-09-16 Siemens Aktiengesellschaft In-situ wafer temperature control apparatus for single wafer tools
JPH09213781A (ja) 1996-02-01 1997-08-15 Tokyo Electron Ltd 載置台構造及びそれを用いた処理装置
US6095084A (en) 1996-02-02 2000-08-01 Applied Materials, Inc. High density plasma process chamber
US5740016A (en) 1996-03-29 1998-04-14 Lam Research Corporation Solid state temperature controlled substrate holder
US5802856A (en) 1996-07-31 1998-09-08 Stanford University Multizone bake/chill thermal cycling module
US5702624A (en) * 1996-10-09 1997-12-30 Taiwan Semiconductors Manfuacturing Company, Ltd Compete hot plate temperature control system for hot treatment
KR200159921Y1 (ko) 1996-11-23 1999-11-01 이세원 리프터의 업/다운 제어회로
US5994675A (en) 1997-03-07 1999-11-30 Semitool, Inc. Semiconductor processing furnace heating control system
JP3526184B2 (ja) 1997-03-17 2004-05-10 大日本スクリーン製造株式会社 基板処理装置
JPH11126743A (ja) 1997-10-24 1999-05-11 Tokyo Electron Ltd 処理装置
AU1308699A (en) * 1997-11-07 1999-05-31 Shell Oil Company Heater control
US6091060A (en) 1997-12-31 2000-07-18 Temptronic Corporation Power and control system for a workpiece chuck
US6222161B1 (en) 1998-01-12 2001-04-24 Tokyo Electron Limited Heat treatment apparatus
US6112697A (en) 1998-02-19 2000-09-05 Micron Technology, Inc. RF powered plasma enhanced chemical vapor deposition reactor and methods
US5886866A (en) 1998-07-06 1999-03-23 Applied Materials, Inc. Electrostatic chuck having a combination electrode structure for substrate chucking, heating and biasing
JP3892609B2 (ja) 1999-02-16 2007-03-14 株式会社東芝 ホットプレートおよび半導体装置の製造方法
DE19907497C2 (de) 1999-02-22 2003-05-28 Steag Hamatech Ag Vorrichtung und Verfahren zur Wärmebehandlung von Substraten
US6353209B1 (en) 1999-03-04 2002-03-05 Board Of Trustees Of The Leland Stanford Junior University Temperature processing module
US6469283B1 (en) * 1999-03-04 2002-10-22 Applied Materials, Inc. Method and apparatus for reducing thermal gradients within a substrate support
US6523493B1 (en) 2000-08-01 2003-02-25 Tokyo Electron Limited Ring-shaped high-density plasma source and method
US6310755B1 (en) * 1999-05-07 2001-10-30 Applied Materials, Inc. Electrostatic chuck having gas cavity and method
JP2000332089A (ja) 1999-05-18 2000-11-30 Toshiba Ceramics Co Ltd ウエハ加熱保持用静電チャック
US6100506A (en) 1999-07-26 2000-08-08 International Business Machines Corporation Hot plate with in situ surface temperature adjustment
JP2004303736A (ja) 1999-08-09 2004-10-28 Ibiden Co Ltd セラミックヒータ
JP2001118662A (ja) 1999-08-09 2001-04-27 Ibiden Co Ltd セラミックヒータ
US6175175B1 (en) 1999-09-10 2001-01-16 The University Of Chicago Levitation pressure and friction losses in superconducting bearings
DE60045384D1 (de) 1999-09-29 2011-01-27 Tokyo Electron Ltd Mehrzonenwiderstandsheizung
US6740853B1 (en) 1999-09-29 2004-05-25 Tokyo Electron Limited Multi-zone resistance heater
JP2001102157A (ja) 1999-10-01 2001-04-13 Ngk Insulators Ltd セラミックスヒータ
EP1199908A4 (en) 1999-10-22 2003-01-22 Ibiden Co Ltd CERAMIC HEATING ELEMENT
JP2001126743A (ja) 1999-10-26 2001-05-11 Matsushita Electric Ind Co Ltd 高分子電解質型燃料電池
JP2001203257A (ja) 2000-01-20 2001-07-27 Sumitomo Electric Ind Ltd 半導体製造装置用ウェハ保持体
US6888106B2 (en) 2000-04-07 2005-05-03 Ibiden Co., Ltd. Ceramic heater
US6271459B1 (en) 2000-04-26 2001-08-07 Wafermasters, Inc. Heat management in wafer processing equipment using thermoelectric device
JP2002059579A (ja) 2000-08-15 2002-02-26 Casio Comput Co Ltd 駆動回路
US6403403B1 (en) 2000-09-12 2002-06-11 The Aerospace Corporation Diode isolated thin film fuel cell array addressing method
JP3764639B2 (ja) 2000-09-13 2006-04-12 株式会社日立製作所 プラズマ処理装置および半導体装置の製造方法
US6475336B1 (en) 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
AU2002212963A1 (en) 2000-10-25 2002-05-06 Tokyo Electron Limited Method of and structure for controlling electrode temperature
DE10059665C1 (de) 2000-12-01 2002-07-11 Steag Hamatech Ag Verfahren zum thermischen Behandeln von Substraten
US6501052B2 (en) 2000-12-22 2002-12-31 Chrysalis Technologies Incorporated Aerosol generator having multiple heating zones and methods of use thereof
AU2002240261A1 (en) 2001-03-02 2002-09-19 Tokyo Electron Limited Method and apparatus for active temperature control of susceptors
US6746616B1 (en) 2001-03-27 2004-06-08 Advanced Micro Devices, Inc. Method and apparatus for providing etch uniformity using zoned temperature control
US6741446B2 (en) 2001-03-30 2004-05-25 Lam Research Corporation Vacuum plasma processor and method of operating same
JP3582518B2 (ja) 2001-04-18 2004-10-27 住友電気工業株式会社 抵抗発熱体回路パターンとそれを用いた基板処理装置
KR100425445B1 (ko) * 2001-04-24 2004-03-30 삼성전자주식회사 플라즈마 에칭 챔버 및 이를 이용한 포토마스크 제조 방법
US6847014B1 (en) 2001-04-30 2005-01-25 Lam Research Corporation Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
EP1391140B1 (en) 2001-04-30 2012-10-10 Lam Research Corporation Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
US7161121B1 (en) 2001-04-30 2007-01-09 Lam Research Corporation Electrostatic chuck having radial temperature control capability
US20050211385A1 (en) 2001-04-30 2005-09-29 Lam Research Corporation, A Delaware Corporation Method and apparatus for controlling spatial temperature distribution
US6795292B2 (en) 2001-05-15 2004-09-21 Dennis Grimard Apparatus for regulating temperature of a process kit in a semiconductor wafer-processing chamber
ITMI20011253A1 (it) * 2001-06-14 2002-12-14 Whirlpool Co Sistema di gestione della potenza in apparecchi di cottura elettrici
US20060191637A1 (en) 2001-06-21 2006-08-31 John Zajac Etching Apparatus and Process with Thickness and Uniformity Control
US6483690B1 (en) 2001-06-28 2002-11-19 Lam Research Corporation Ceramic electrostatic chuck assembly and method of making
US6693262B2 (en) * 2001-10-17 2004-02-17 Whirlpool Corporation Cooking hob with discrete distributed heating elements
JP3897563B2 (ja) 2001-10-24 2007-03-28 日本碍子株式会社 加熱装置
US6739138B2 (en) 2001-11-26 2004-05-25 Innovations Inc. Thermoelectric modules and a heating and cooling apparatus incorporating same
JP3559549B2 (ja) 2002-01-29 2004-09-02 京セラ株式会社 ウエハ加熱装置
JP4030787B2 (ja) * 2002-03-04 2008-01-09 東京エレクトロン株式会社 基板加熱方法、基板加熱装置及び塗布、現像装置
US6921724B2 (en) 2002-04-02 2005-07-26 Lam Research Corporation Variable temperature processes for tunable electrostatic chuck
US6612673B1 (en) 2002-04-29 2003-09-02 Hewlett-Packard Development Company, L.P. System and method for predicting dynamic thermal conditions of an inkjet printing system
JP3808407B2 (ja) 2002-07-05 2006-08-09 住友大阪セメント株式会社 電極内蔵型サセプタ及びその製造方法
DE10392912B4 (de) 2002-07-11 2015-09-17 Temptronic Corp. Werkstück-Einspannvorrichtung mit Temperatursteuerbaueinheit mit Abstandshaltern zwischen Schichten, die einen Zwischenraum für thermoelektrische Module schaffen und Verfahren zum Halten eines Werkstücks
US6825681B2 (en) 2002-07-19 2004-11-30 Delta Design, Inc. Thermal control of a DUT using a thermal control substrate
US7504006B2 (en) 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
JP3924524B2 (ja) 2002-10-29 2007-06-06 京セラ株式会社 ウエハ加熱装置およびその製造方法
US7347901B2 (en) 2002-11-29 2008-03-25 Tokyo Electron Limited Thermally zoned substrate holder assembly
US7372001B2 (en) 2002-12-17 2008-05-13 Nhk Spring Co., Ltd. Ceramics heater
US6979805B2 (en) 2003-01-08 2005-12-27 Hewlett-Packard Development Company, L.P. Fuel-cell resistors and methods
US6825617B2 (en) 2003-02-27 2004-11-30 Hitachi High-Technologies Corporation Semiconductor processing apparatus
CN100464927C (zh) 2003-03-28 2009-03-04 东京毅力科创株式会社 用于衬底的温度控制的方法和系统
US6989210B2 (en) 2003-04-23 2006-01-24 Hewlett-Packard Development Company, L.P. Fuel cartridge with thermo-degradable barrier system
US8974630B2 (en) 2003-05-07 2015-03-10 Sungkyunkwan University Inductively coupled plasma processing apparatus having internal linear antenna for large area processing
US20040222210A1 (en) 2003-05-08 2004-11-11 Hongy Lin Multi-zone ceramic heating system and method of manufacture thereof
JP2005026120A (ja) 2003-07-03 2005-01-27 Ibiden Co Ltd セラミックヒータ
US20050016465A1 (en) 2003-07-23 2005-01-27 Applied Materials, Inc. Electrostatic chuck having electrode with rounded edge
TWI247551B (en) 2003-08-12 2006-01-11 Ngk Insulators Ltd Method of manufacturing electrical resistance heating element
US6913571B2 (en) * 2003-10-14 2005-07-05 Datex-Ohmeda, Inc. Direct heater control for infant care apparatus
JP4686967B2 (ja) * 2003-10-14 2011-05-25 セイコーエプソン株式会社 光素子の製造方法
JP2005123286A (ja) 2003-10-15 2005-05-12 Hitachi Kokusai Electric Inc 基板処理装置
JP2005136025A (ja) 2003-10-29 2005-05-26 Trecenti Technologies Inc 半導体製造装置、半導体装置の製造方法及びウエハステージ
JP2005150370A (ja) 2003-11-14 2005-06-09 Kyocera Corp 静電チャック
KR20050053464A (ko) 2003-12-01 2005-06-08 정준호 직렬 연결된 2개의 다이오드를 이용한 반도체 기억소자
JP4602662B2 (ja) 2003-12-01 2010-12-22 株式会社ブリヂストン セラミックヒータユニット
US20100257871A1 (en) 2003-12-11 2010-10-14 Rama Venkatasubramanian Thin film thermoelectric devices for power conversion and cooling
US7163722B2 (en) 2003-12-19 2007-01-16 Lcd Lighting, Inc. Device and method for coating serpentine fluorescent lamps
US7250309B2 (en) 2004-01-09 2007-07-31 Applied Materials, Inc. Integrated phase angle and optical critical dimension measurement metrology for feed forward and feedback process control
JP4349952B2 (ja) 2004-03-24 2009-10-21 京セラ株式会社 ウェハ支持部材とその製造方法
US7141763B2 (en) 2004-03-26 2006-11-28 Tokyo Electron Limited Method and apparatus for rapid temperature change and control
US7697260B2 (en) 2004-03-31 2010-04-13 Applied Materials, Inc. Detachable electrostatic chuck
JP2005294237A (ja) 2004-04-05 2005-10-20 Aun:Kk 面状ヒーター
JP4281605B2 (ja) 2004-04-08 2009-06-17 住友電気工業株式会社 半導体加熱装置
US20050229854A1 (en) 2004-04-15 2005-10-20 Tokyo Electron Limited Method and apparatus for temperature change and control
US7415312B2 (en) 2004-05-25 2008-08-19 Barnett Jr James R Process module tuning
KR20050121913A (ko) 2004-06-23 2005-12-28 삼성전자주식회사 베이크 장치
US7143222B2 (en) 2004-09-21 2006-11-28 International Business Machines Corporation Adaptive message delivery system
US7396431B2 (en) 2004-09-30 2008-07-08 Tokyo Electron Limited Plasma processing system for treating a substrate
KR100632544B1 (ko) 2004-12-15 2006-10-09 현대자동차주식회사 직류변환기의 게이트 드라이버 회로
US7475551B2 (en) 2004-12-23 2009-01-13 Nanocoolers, Inc. System employing temporal integration of thermoelectric action
US20060226123A1 (en) 2005-04-07 2006-10-12 Applied Materials, Inc. Profile control using selective heating
JP4593381B2 (ja) * 2005-06-20 2010-12-08 東京エレクトロン株式会社 上部電極、プラズマ処理装置およびプラズマ処理方法
WO2007002861A2 (en) * 2005-06-29 2007-01-04 Watlow Electric Manufacturing Company Smart layered heater surfaces
JP4667158B2 (ja) 2005-08-09 2011-04-06 パナソニック株式会社 ウェーハレベルバーンイン方法
JP3933174B2 (ja) 2005-08-24 2007-06-20 住友電気工業株式会社 ヒータユニットおよびそれを備えた装置
JP3972944B2 (ja) 2005-09-12 2007-09-05 住友電気工業株式会社 セラミックスヒータ及びそれを備えた半導体製造装置
JP2007081160A (ja) 2005-09-14 2007-03-29 Fujitsu Ltd 半導体装置の製造方法
JP4483751B2 (ja) 2005-09-16 2010-06-16 株式会社デンソー 電源逆接続保護回路
US20070125762A1 (en) 2005-12-01 2007-06-07 Applied Materials, Inc. Multi-zone resistive heater
JP2007242913A (ja) 2006-03-09 2007-09-20 Hitachi High-Technologies Corp 試料載置電極及びそれを用いたプラズマ処理装置
JP4699283B2 (ja) * 2006-05-23 2011-06-08 東京エレクトロン株式会社 熱処理板の温度制御方法、プログラム及び熱処理板の温度制御装置
US8168050B2 (en) 2006-07-05 2012-05-01 Momentive Performance Materials Inc. Electrode pattern for resistance heating element and wafer processing apparatus
JP4394667B2 (ja) 2006-08-22 2010-01-06 日本碍子株式会社 ヒータ付き静電チャックの製造方法
US7501605B2 (en) 2006-08-29 2009-03-10 Lam Research Corporation Method of tuning thermal conductivity of electrostatic chuck support assembly
US7557328B2 (en) 2006-09-25 2009-07-07 Tokyo Electron Limited High rate method for stable temperature control of a substrate
US7297894B1 (en) 2006-09-25 2007-11-20 Tokyo Electron Limited Method for multi-step temperature control of a substrate
US7723648B2 (en) 2006-09-25 2010-05-25 Tokyo Electron Limited Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system
JP4850664B2 (ja) 2006-11-02 2012-01-11 東京エレクトロン株式会社 熱処理板の温度設定方法、プログラム、プログラムを記録したコンピュータ読み取り可能な記録媒体及び熱処理板の温度設定装置
KR20080058109A (ko) 2006-12-21 2008-06-25 동부일렉트로닉스 주식회사 웨이퍼 가열장치 및 가열방법
US8222574B2 (en) 2007-01-15 2012-07-17 Applied Materials, Inc. Temperature measurement and control of wafer support in thermal processing chamber
US20080197015A1 (en) 2007-02-16 2008-08-21 Terry Bluck Multiple-magnetron sputtering source with plasma confinement
CN101681870B (zh) 2007-03-12 2011-08-17 东京毅力科创株式会社 用于提高衬底内处理均匀性的动态温度背部气体控制
KR100849069B1 (ko) 2007-04-20 2008-07-30 주식회사 하이닉스반도체 정전기 방전 보호 장치
WO2008140022A1 (ja) 2007-05-08 2008-11-20 Tokyo Electron Limited 化合物半導体の熱処理方法及びその装置
US8057602B2 (en) 2007-05-09 2011-11-15 Applied Materials, Inc. Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber
US20090000738A1 (en) 2007-06-29 2009-01-01 Neil Benjamin Arrays of inductive elements for minimizing radial non-uniformity in plasma
JP5169046B2 (ja) 2007-07-20 2013-03-27 ウシオ電機株式会社 光照射式加熱処理装置
US20090031955A1 (en) 2007-07-30 2009-02-05 Applied Materials, Inc. Vacuum chucking heater of axisymmetrical and uniform thermal profile
JP4486135B2 (ja) 2008-01-22 2010-06-23 東京エレクトロン株式会社 温度制御機構およびそれを用いた処理装置
JP5351479B2 (ja) 2008-01-28 2013-11-27 東京エレクトロン株式会社 加熱源の冷却構造
JP5307445B2 (ja) 2008-04-28 2013-10-02 日本碍子株式会社 基板保持体及びその製造方法
US20100116788A1 (en) 2008-11-12 2010-05-13 Lam Research Corporation Substrate temperature control by using liquid controlled multizone substrate support
JP2010153730A (ja) 2008-12-26 2010-07-08 Omron Corp 配線構造、ヒータ駆動装置、計測装置および制御システム
GB2470063B (en) 2009-05-08 2011-09-28 Siemens Magnet Technology Ltd Quench propagation circuit for superconducting magnets
KR101842675B1 (ko) 2009-07-08 2018-03-27 플라즈마시, 인크. 플라즈마 처리를 위한 장치 및 방법
US8637794B2 (en) 2009-10-21 2014-01-28 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
SG180882A1 (en) 2009-12-15 2012-07-30 Lam Res Corp Adjusting substrate temperature to improve cd uniformity
US8791392B2 (en) * 2010-10-22 2014-07-29 Lam Research Corporation Methods of fault detection for multiplexed heater array
US8546732B2 (en) 2010-11-10 2013-10-01 Lam Research Corporation Heating plate with planar heater zones for semiconductor processing
US9307578B2 (en) 2011-08-17 2016-04-05 Lam Research Corporation System and method for monitoring temperatures of and controlling multiplexed heater array
JP6067705B2 (ja) * 2011-08-17 2017-01-25 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 多重ヒータ配列の温度監視及び制御のためのシステムと方法
US8624168B2 (en) 2011-09-20 2014-01-07 Lam Research Corporation Heating plate with diode planar heater zones for semiconductor processing
US9324589B2 (en) 2012-02-28 2016-04-26 Lam Research Corporation Multiplexed heater array using AC drive for semiconductor processing
US10217615B2 (en) 2013-12-16 2019-02-26 Lam Research Corporation Plasma processing apparatus and component thereof including an optical fiber for determining a temperature thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004319953A (ja) 2003-03-31 2004-11-11 Kokusai Electric Semiconductor Service Inc ヒータ検査装置及びそれを搭載した半導体製造装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240022059A (ko) * 2022-08-10 2024-02-20 세메스 주식회사 히터 상태 감지 시스템 및 방법
KR102786477B1 (ko) * 2022-08-10 2025-03-28 세메스 주식회사 히터 상태 감지 시스템 및 방법

Also Published As

Publication number Publication date
JP6266034B2 (ja) 2018-01-24
KR101599339B1 (ko) 2016-03-03
KR20160025635A (ko) 2016-03-08
WO2012054198A2 (en) 2012-04-26
JP5925789B2 (ja) 2016-05-25
CN105206552A (zh) 2015-12-30
KR20140009152A (ko) 2014-01-22
US20120097661A1 (en) 2012-04-26
US20140263274A1 (en) 2014-09-18
TW201229528A (en) 2012-07-16
CN105206552B (zh) 2018-06-26
SG10201508636RA (en) 2015-11-27
SG189218A1 (en) 2013-05-31
WO2012054198A3 (en) 2012-06-21
CN103168345B (zh) 2015-09-23
JP2014502037A (ja) 2014-01-23
TWI541517B (zh) 2016-07-11
US8791392B2 (en) 2014-07-29
US10568163B2 (en) 2020-02-18
CN103168345A (zh) 2013-06-19
JP2016165006A (ja) 2016-09-08

Similar Documents

Publication Publication Date Title
KR101697054B1 (ko) 멀티플렉싱된 히터 어레이에 대한 폴트 검출 방법
US9713200B2 (en) System and method for monitoring temperatures of and controlling multiplexed heater array
JP6067705B2 (ja) 多重ヒータ配列の温度監視及び制御のためのシステムと方法
US8809747B2 (en) Current peak spreading schemes for multiplexed heated array
US10056225B2 (en) Adjusting substrate temperature to improve CD uniformity
TWI608563B (zh) 半導體處理用之設有平坦加熱器區的加熱板
KR101915371B1 (ko) 반도체 처리를 위한 다이오드 평탄한 히터존들을 갖는 가열 플레이트
JP2019505092A5 (enExample)
KR20230031571A (ko) 기판 처리 장치 및 발열체의 온도 제어 방법

Legal Events

Date Code Title Description
A107 Divisional application of patent
A201 Request for examination
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20191226

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 10

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000