KR101627586B1 - 뜨거운 벽과 차가운 콜렉터 미러를 가진 레이저 산출 플라즈마 극 자외선 챔버용 시스템, 방법 및 장치 - Google Patents

뜨거운 벽과 차가운 콜렉터 미러를 가진 레이저 산출 플라즈마 극 자외선 챔버용 시스템, 방법 및 장치 Download PDF

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KR101627586B1
KR101627586B1 KR1020117026585A KR20117026585A KR101627586B1 KR 101627586 B1 KR101627586 B1 KR 101627586B1 KR 1020117026585 A KR1020117026585 A KR 1020117026585A KR 20117026585 A KR20117026585 A KR 20117026585A KR 101627586 B1 KR101627586 B1 KR 101627586B1
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target material
collector mirror
chamber
ultraviolet light
euv
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KR20120005501A (ko
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윌리암 엔. 팔트로
이고르 브이. 포멘코프
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에이에스엠엘 네델란즈 비.브이.
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/002—Supply of the plasma generating material
    • H05G2/0025—Systems for collecting the plasma generating material after the plasma generation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020117026585A 2009-04-09 2010-03-31 뜨거운 벽과 차가운 콜렉터 미러를 가진 레이저 산출 플라즈마 극 자외선 챔버용 시스템, 방법 및 장치 Active KR101627586B1 (ko)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US16801209P 2009-04-09 2009-04-09
US16800009P 2009-04-09 2009-04-09
US16803309P 2009-04-09 2009-04-09
US61/168,000 2009-04-09
US61/168,012 2009-04-09
US61/168,033 2009-04-09
US12/725,167 US8575575B2 (en) 2009-04-09 2010-03-16 System, method and apparatus for laser produced plasma extreme ultraviolet chamber with hot walls and cold collector mirror
US12/725,167 2010-03-16

Publications (2)

Publication Number Publication Date
KR20120005501A KR20120005501A (ko) 2012-01-16
KR101627586B1 true KR101627586B1 (ko) 2016-06-07

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KR1020117026585A Active KR101627586B1 (ko) 2009-04-09 2010-03-31 뜨거운 벽과 차가운 콜렉터 미러를 가진 레이저 산출 플라즈마 극 자외선 챔버용 시스템, 방법 및 장치
KR1020117026586A Active KR101618143B1 (ko) 2009-04-09 2010-03-31 Ｅｕｖ 생성 챔버에서 백스플래시를 방지하기 위한 액적 캐처용 시스템, 방법 및 장치
KR1020117026713A Active KR101702413B1 (ko) 2009-04-09 2010-03-31 최적 극 자외광 출력을 위해 타겟 물질을 정렬 및 동기화하기 위한 시스템, 방법 및 장치

Family Applications After (2)

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KR1020117026586A Active KR101618143B1 (ko) 2009-04-09 2010-03-31 Ｅｕｖ 생성 챔버에서 백스플래시를 방지하기 위한 액적 캐처용 시스템, 방법 및 장치
KR1020117026713A Active KR101702413B1 (ko) 2009-04-09 2010-03-31 최적 극 자외광 출력을 위해 타겟 물질을 정렬 및 동기화하기 위한 시스템, 방법 및 장치

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US (5) US8138487B2 (https=)
JP (3) JP5684786B2 (https=)
KR (3) KR101627586B1 (https=)
TW (4) TWI563880B (https=)
WO (3) WO2010117859A1 (https=)

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