KR101380639B1 - 반도체 장치의 제작 방법 - Google Patents

반도체 장치의 제작 방법 Download PDF

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Publication number
KR101380639B1
KR101380639B1 KR1020080019264A KR20080019264A KR101380639B1 KR 101380639 B1 KR101380639 B1 KR 101380639B1 KR 1020080019264 A KR1020080019264 A KR 1020080019264A KR 20080019264 A KR20080019264 A KR 20080019264A KR 101380639 B1 KR101380639 B1 KR 101380639B1
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film
crystal
orientation
region
laser beam
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Korean (ko)
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KR20080080947A (ko
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토모아키 모리와카
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/382—Scanning of a beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3454—Amorphous

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  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
KR1020080019264A 2007-03-02 2008-02-29 반도체 장치의 제작 방법 Expired - Fee Related KR101380639B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007052230 2007-03-02
JPJP-P-2007-00052230 2007-03-02

Publications (2)

Publication Number Publication Date
KR20080080947A KR20080080947A (ko) 2008-09-05
KR101380639B1 true KR101380639B1 (ko) 2014-04-04

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Country Status (5)

Country Link
US (1) US7972943B2 (https=)
JP (1) JP5396030B2 (https=)
KR (1) KR101380639B1 (https=)
CN (1) CN101256987B (https=)
TW (1) TWI413192B (https=)

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TWI479660B (zh) * 2006-08-31 2015-04-01 半導體能源研究所股份有限公司 薄膜電晶體，其製造方法，及半導體裝置
US9177811B2 (en) 2007-03-23 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20090193676A1 (en) * 2008-01-31 2009-08-06 Guo Shengguang Shoe Drying Apparatus
JP5593107B2 (ja) * 2009-04-02 2014-09-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8772627B2 (en) * 2009-08-07 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
KR20110107595A (ko) * 2010-03-25 2011-10-04 삼성전기주식회사 잉크젯 프린트 헤드의 제조 방법
CN102347350A (zh) * 2010-07-30 2012-02-08 中国科学院微电子研究所 一种半导体结构及其制造方法
KR101720533B1 (ko) * 2010-08-31 2017-04-03 삼성디스플레이 주식회사 다결정 실리콘층의 제조 방법, 상기 다결정 실리콘층 제조 방법을 포함하는 박막 트랜지스터의 제조 방법, 상기 방법에 의해 제조된 박막 트랜지스터, 및 상기 박막 트랜지스터를 포함하는 유기 발광 디스플레이 장치
CN103339715B (zh) 2010-12-03 2016-01-13 株式会社半导体能源研究所 氧化物半导体膜以及半导体装置
DE102011002236A1 (de) * 2011-04-21 2012-10-25 Dritte Patentportfolio Beteiligungsgesellschaft Mbh & Co.Kg Verfahren zur Herstellung einer polykristallinen Schicht
JP2013149953A (ja) * 2011-12-20 2013-08-01 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
KR101960745B1 (ko) * 2012-11-14 2019-03-21 엘지디스플레이 주식회사 연성 표시소자 절단방법 및 이를 이용한 연성 표시소자 제조방법
KR101971202B1 (ko) * 2012-11-22 2019-04-23 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조방법
CN104956466B (zh) 2012-12-31 2018-03-02 恩耐公司 用于低温多晶硅结晶的短脉冲光纤激光器
JP2016103395A (ja) * 2014-11-28 2016-06-02 株式会社ジャパンディスプレイ 表示装置
JP2017037178A (ja) 2015-08-10 2017-02-16 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
CN107403724A (zh) * 2016-05-20 2017-11-28 稳懋半导体股份有限公司 化合物半导体集成电路的抗湿气结构
TWI617081B (zh) * 2017-03-23 2018-03-01 國立中山大學 波導構造的製作方法
US10775490B2 (en) * 2017-10-12 2020-09-15 Infineon Technologies Ag Radio frequency systems integrated with displays and methods of formation thereof

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TWI413192B (zh) 2013-10-21
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US20080213984A1 (en) 2008-09-04
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