JP2008235875A - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP2008235875A JP2008235875A JP2008033063A JP2008033063A JP2008235875A JP 2008235875 A JP2008235875 A JP 2008235875A JP 2008033063 A JP2008033063 A JP 2008033063A JP 2008033063 A JP2008033063 A JP 2008033063A JP 2008235875 A JP2008235875 A JP 2008235875A
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- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
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Abstract
【解決手段】絶縁膜、半導体膜、絶縁膜、および半導体膜の順で、基板上に膜を積層する。基板の上方からレーザ光を照射下層および上層の半導体膜を溶融させて、下層の半導体膜を結晶化させる。レーザ光の照射により、上層の半導体膜が液相状態になることで、レーザ光が反射されるため、レーザ光によって下層の半導体膜に過剰に加熱されることを防ぐことができる。また、上層の半導体膜も溶融することで、下層の半導体膜の溶融時間を延ばすことができる。
【選択図】図1
Description
図1および図2を用いて、本実施の形態では、第1のバッファ膜、第1の半導体膜、第2のバッファ膜、および光吸収膜を基板上に形成し、光吸収膜および第2のバッファ膜を通過させて第1の半導体膜にレーザ光を照射することで、第1の半導体膜に結晶性半導体を形成する方法を説明する。
(1)非晶質シリコン膜の表面に、数nm程度の単体金属、金属化合物または合金の薄膜をスパッタ法や蒸着法で形成する方法。
(2)単体金属、金属化合物または合金と、溶媒との混合物をスピンコート法、印刷法等で非晶質シリコン膜の上面に塗布する方法。この方法では、溶媒中に金属化合物等が溶解していても、溶解せずに分散していてもよい。
本発明の結晶化方法を用いて形成された結晶性半導体膜を用いて、様々な半導体装置を作製することができる。本発明の結晶化方法では、厚さ50nm以下の非単結晶半導体膜を歩留まり良く作製することが可能になる。よって、ゲート幅が1μm以下に微細化しても、短チャネル効果が抑制されたトランジスタを形成することができる。本実施の形態では、図3〜図5を用いて、実施の形態1で説明したレーザ結晶化によって形成された結晶性半導体を用いた半導体装置の作製方法を説明する。
11 酸化窒化シリコン膜
12 酸化窒化シリコン膜
13 非晶質シリコン膜
14 酸化窒化シリコン膜
15 非晶質シリコン膜
16 レーザ光
23 結晶性シリコン
25 結晶性シリコン
100 基板
101 第1のバッファ膜(第1の絶縁膜)
102 第1の半導体膜
103 第2のバッファ膜(第2の絶縁膜)
104、104’ 光吸収膜(第2の半導体膜)
105 レーザ光
106 液相の半導体
107 液相の光吸収膜
105 レーザ光
108 結晶性半導体
120 基板
121 第1のバッファ膜
122 第1の半導体膜
123 第2のバッファ膜
124 光吸収膜
128 結晶性半導体
131 マスク
132 第1の不純物領域
133 導電膜
134、135 第1の導電膜
138、139 第1の絶縁膜
140、141 結晶性半導体膜
142〜145 第2の不純物領域
146 チャネル形成領域
147 第2の絶縁膜
148〜150 第2の導電膜
152 薄膜トランジスタ
153 容量素子
160 第1の絶縁膜
161、162 結晶性半導体膜
163 第2の絶縁膜
164、165 第1の導電膜
166〜169 不純物領域
170、171 チャネル形成領域
173 第3の絶縁膜
174〜177 第2の導電膜
178 第1の薄膜トランジスタ
179 第2の薄膜トランジスタ
180 ガラス基板
181 絶縁膜
182 非晶質シリコン膜
183 絶縁膜
184 非晶質シリコン膜
185 レーザ光
186、187 液相のシリコン
188 結晶性シリコン
189 結晶性シリコン
200a 窒化タンタル膜
200b タングステン膜
201〜203 半導体層
201c〜203c チャネル形成領域
204 酸化窒化シリコン膜
205〜208 ゲート電極
209〜215 高濃度不純物領域
216〜223 低濃度不純物領域
225 nチャネル型薄膜トランジスタ
226 pチャネル型薄膜トランジスタ
227 nチャネル型薄膜トランジスタ
231 酸化シリコン膜
232 窒化シリコン膜
233 酸化シリコン膜
234〜239 配線
240 接続端子
241 酸化窒化シリコン膜
242 第1の画素電極
243 配向膜
244 導電層
251 ガラス基板
252 着色層
253 第2の画素電極
254 配向膜
255 液晶層
256 スペーサ
257 シール材
258 液晶素子
261 異方性導電膜
262 FPC
263 端子部
264 駆動回路部
265 画素部
300 層間絶縁膜
301 nチャネル型薄膜トランジスタ
302 pチャネル型薄膜トランジスタ
303 pチャネル型薄膜トランジスタ
311 端子部
312 駆動回路部
313 画素部
314 接続端子
315 層間絶縁膜
316 第1の電極層
317 有機絶縁物膜
318 発光物質を含む層
319 第2の電極層
320 導電層
321 発光素子
322 保護膜
323 シール材
324 封止基板
325 空間
326 異方性導電層
327 FPC
351 本体
352〜354 表示部
355 本体
356 表示部
357 本体
358 表示部
359 本体
360 表示部
361 本体
362 表示部
400 半導体装置
401 アンテナ部
402 電源部
403 ロジック部
411 アンテナ
421 整流回路
422 保持容量
423 定電圧回路
431 復調回路
432 クロック生成・補正回路
433 判定回路
434 メモリコントローラ
435 変調回路
436 変調用抵抗
437 符号化回路
438 マスクROM
441 高耐圧型薄膜トランジスタ
442 コンデンサ
443 nチャネル型薄膜トランジスタ
444 pチャネル型薄膜トランジスタ
R1〜R4 レジスト
500 ガラス基板
501 剥離膜
501a 第1層
501b 第2層
501c 第3層
502 絶縁膜
502a 第1層
502b 第2層
503 非晶質シリコン膜
504 絶縁膜
505 非晶質シリコン膜
507 結晶性シリコン
508 結晶性シリコン
509 結晶性シリコン
511〜513 半導体層
511c〜513c チャネル形成領域
515 絶縁膜
516 n型不純物領域
521〜524 第1導電膜
525〜528 n型低濃度不純物領域
529、530 p型高濃度不純物領域
531〜534 絶縁層
536〜541 n型高濃度不純物領域
542〜545 n型低濃度不純物領域
546 n型不純物領域
550 キャップ絶縁膜
551 第1層間絶縁膜
552〜563 第2導電膜
565 第2層間絶縁膜
566 第3導電膜
567 第3層間絶縁膜
568 第4導電膜
570 素子形成層
571 絶縁膜
572 支持基材
573 可撓性基板
Claims (35)
- 基板上に第1のバッファ膜を形成し、前記第1のバッファ膜上に第1の半導体膜を形成し、
前記第1の半導体膜上に第2のバッファ膜を形成し、
前記第2のバッファ膜上に光吸収膜を形成し、
前記光吸収膜の上方からレーザ光を照射して、前記第1の半導体膜及び前記光吸収膜を溶融することで、前記第1の半導体膜に結晶性半導体を形成することを特徴とする半導体装置の作製方法。 - 請求項1項において、
前記光吸収膜の厚さは、30nm以上200nm以下であることを特徴とする半導体装置の作製方法。 - 請求項1または2において、
前記第1の半導体膜の厚さは、50nm以下であることを特徴とする半導体装置の作製方法。 - 請求項1乃至3のいずれか1項において、
シリコンまたはゲルマニウムを主成分とする半導体で、前記第1の半導体膜を形成することを特徴とする半導体装置の作製方法。 - 請求項1乃至3のいずれか1項において、
非晶質シリコンまたは微結晶シリコンで、前記第1の半導体膜を形成することを特徴とする半導体装置の作製方法。 - 請求項1乃至3のいずれか1項において、
非晶質ゲルマニウムまたは微結晶ゲルマニウムで、前記第1の半導体膜を形成することを特徴とする半導体装置の作製方法。 - 請求項1乃至3のいずれか1項において、
非晶質または微結晶のシリコンゲルマニウム(SixGe1−x、0<x<1)で、前記第1の半導体膜を形成することを特徴とする半導体装置の作製方法。 - 請求項1乃至7のいずれか1項において、
前記光吸収膜は、半導体膜であることを特徴とする半導体装置の作製方法。 - 請求項1乃至7のいずれか1項において、
前記光吸収膜はシリコンまたはゲルマニウムを主成分とする半導体膜であることを特徴とする半導体装置の作製方法。 - 請求項9において、
前記シリコンまたはゲルマニウムを主成分とする半導体膜は、非晶質シリコンまたは微結晶のシリコン、非晶質または微結晶のゲルマニウム、非晶質または微結晶のシリコンゲルマニウム(SixGe1−x、0<x<1)でなることを特徴とする半導体装置の作製方法。 - 請求項1乃至10のいずれか1項において、
前記第1のバッファ膜は絶縁膜であることを特徴とする半導体装置の作製方法。 - 請求項1乃至11のいずれか1項において、
前記第2のバッファ膜は絶縁膜であることを特徴とする半導体装置の作製方法。 - 請求項1乃至12のいずれか1項において、
前記第2のバッファ膜を形成する前に、前記第1の半導体膜に半導体の結晶化を助長する元素を導入することを特徴とする半導体装置の作製方法。 - 請求項13において、
前記結晶化を助長する元素は、ニッケル(Ni)、パラジウム(Pd)、コバルト(Co)、白金(Pt)、鉄(Fe)、スズ(Sn)、鉛(Pb)、銅(Cu)、金(Au)から選ばれた元素であることを特徴とする半導体装置の作製方法。 - 請求項1乃至14のいずれか1項において、
前記レーザ光は、連続発振レーザ又は疑似連続発振レーザから射出されたレーザ光であることを特徴とする半導体装置の作製方法。 - 請求項1乃至14のいずれか1項において、
前記レーザ光は、パルス発振レーザから射出されたレーザ光であることを特徴とする半導体装置の作製方法。 - 請求項1乃至14のいずれか1項において、
前記レーザ光の代わりに、ランプを光源とするランプ光を照射することを特徴とする半導体装置の作製方法。 - 基板上に第1の絶縁膜を形成し、
前記第1の絶縁膜上に第1の半導体膜を形成し、
前記第1の半導体膜上に第2の絶縁膜を形成し、
前記第2の絶縁膜上に第2の半導体膜を形成し、
前記第2の半導体膜を通過させて、前記第1の半導体膜にレーザ光を照射して、前記第1の半導体膜及び前記第2の半導体膜を溶融して、前記第1の半導体膜に結晶性半導体を形成することを特徴とする半導体装置の作製方法。 - 基板上に第1の絶縁膜を形成し、
前記第1の絶縁膜上に第1の半導体膜を形成し、
前記第1の半導体膜上に第2の絶縁膜を形成し、
前記第2の絶縁膜上に第2の半導体膜を形成し、
前記第2の半導体膜を通過させて、前記第1の半導体膜にレーザ光を照射し、前記第1の半導体膜及び前記第2の半導体膜を溶融して、前記第1の半導体膜に結晶性半導体を形成し、
前記第2の半導体膜および前記第2の絶縁膜を除去し、前記結晶性半導体が形成された前記第1の半導体膜を所定の形状に加工して、結晶性半導体膜を形成し、
前記結晶性半導体膜を有する素子を形成することを特徴とする半導体装置の作製方法。 - 基板上に第1の絶縁膜を形成し、
前記第1の絶縁膜上に第1の半導体膜を形成し、
前記第1の半導体膜上に第2の絶縁膜を形成し、
前記第2の絶縁膜上に第2の半導体膜を形成し、
前記第2の半導体膜を通過させて、前記第1の半導体膜にレーザ光を照射し、前記第1の半導体膜及び前記第2の半導体膜を溶融して、前記第1の半導体膜に結晶性半導体を形成し、
前記第2の半導体膜を除去し、前記第2の絶縁膜を所定の形状に加工して、第3の絶縁膜を形成し、
前記結晶性半導体が形成された前記第1の半導体膜を所定の形状に加工して、結晶性半導体膜を形成し、
前記結晶性半導体膜及び前記第3の絶縁膜を有する素子を形成することを特徴とする半導体装置の作製方法。 - 請求項18乃至20のいずれか1項において、
前記第1の半導体膜の厚さは、50nm以下であることを特徴とする半導体装置の作製方法。 - 請求項18乃至21のいずれか1項において、
前記第2の半導体膜の厚さは、30nm以上200nm以下であることを特徴とする半導体装置の作製方法。 - 請求項18乃至22のいずれか1項において、
シリコンまたはゲルマニウムを主成分とする半導体で、前記第1の半導体膜を形成することを特徴とする半導体装置の作製方法。 - 請求項18乃至22のいずれか1項において、
非晶質シリコンまたは微結晶シリコンで、前記第1の半導体膜を形成することを特徴とする半導体装置の作製方法。 - 請求項18乃至22のいずれか1項において、
非晶質ゲルマニウムまたは微結晶ゲルマニウムで、前記第1の半導体膜を形成することを特徴とする半導体装置の作製方法。 - 請求項18乃至22のいずれか1項において、
非晶質または微結晶のシリコンゲルマニウム(SixGe1−x、0<x<1)で、前記第1の半導体膜を形成することを特徴とする半導体装置の作製方法。 - 請求項18乃至26のいずれか1項において、
シリコンまたはゲルマニウムを主成分とする半導体で、前記第2の半導体膜を形成することを特徴とする半導体装置の作製方法。 - 請求項18乃至26のいずれか1項において、
非晶質または微結晶のシリコン、非晶質または微結晶のゲルマニウム、もしくは非晶質または微結晶のシリコンゲルマニウム(SixGe1−x、0<x<1)で、前記第2の半導体膜を形成することを特徴とする半導体装置の作製方法。 - 請求項18乃至28のいずれか1項において、
前記第2の絶縁膜を形成する前に、前記第1の半導体膜に半導体の結晶化を助長する元素を導入することを特徴とする半導体装置の作製方法。 - 請求項29において、前記結晶化を助長する元素は、ニッケル(Ni)、パラジウム(Pd)、コバルト(Co)、白金(Pt)、鉄(Fe)、スズ(Sn)、鉛(Pb)、銅(Cu)、金(Au)から選ばれた元素であることを特徴とする半導体装置の作製方法。
- 請求項18乃至30のいずれか1項において、
前記レーザ光の波長は、100nm以上800nm以下であることを特徴とする半導体装置の作製方法。 - 請求項18乃至31のいずれか1項において、
複数のレーザから射出されたレーザ光のビームスポットを重ねて、前記レーザ光を照射することを特徴とする半導体装置の作製方法。 - 請求項18乃至32のいずれか1項において、
前記レーザ光は、連続発振レーザ又は疑似連続発振レーザから射出されたレーザ光であることを特徴とする半導体装置の作製方法。 - 請求項18乃至32のいずれか1項において、
前記レーザ光は、パルス発振レーザから射出されたレーザ光であることを特徴とする半導体装置の作製方法。 - 請求項18乃至30のいずれか1項において、
前記レーザ光の代わりに、ランプを光源とするランプ光を照射することを特徴とする半導体装置の作製方法。
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US9163310B2 (en) | 2011-02-18 | 2015-10-20 | Veeco Ald Inc. | Enhanced deposition of layer on substrate using radicals |
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US11791159B2 (en) | 2019-01-17 | 2023-10-17 | Ramesh kumar Harjivan Kakkad | Method of fabricating thin, crystalline silicon film and thin film transistors |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6480017A (en) * | 1987-09-21 | 1989-03-24 | Agency Ind Science Techn | Manufacture of semiconductor single crystal layer |
JPH07106246A (ja) * | 1993-09-30 | 1995-04-21 | Kyocera Corp | 多結晶シリコン薄膜の形成方法 |
JP2003168646A (ja) * | 2001-12-04 | 2003-06-13 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JP2007005508A (ja) * | 2005-06-23 | 2007-01-11 | Sony Corp | 薄膜トランジスタの製造方法および表示装置の製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2872425B2 (ja) | 1990-03-24 | 1999-03-17 | キヤノン株式会社 | 半導体デバイスの形成方法 |
EP0449524B1 (en) * | 1990-03-24 | 1997-05-28 | Canon Kabushiki Kaisha | Optical annealing method for semiconductor layer and method for producing semiconductor device employing the same semiconductor layer |
JP2002050764A (ja) * | 2000-08-02 | 2002-02-15 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタ、アレイ基板、液晶表示装置、有機el表示装置およびその製造方法 |
JP2003178979A (ja) | 2001-08-30 | 2003-06-27 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
TWI282126B (en) * | 2001-08-30 | 2007-06-01 | Semiconductor Energy Lab | Method for manufacturing semiconductor device |
JP2004134773A (ja) | 2002-09-18 | 2004-04-30 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
TWI253179B (en) * | 2002-09-18 | 2006-04-11 | Sanyo Electric Co | Method for making a semiconductor device |
WO2007046290A1 (en) * | 2005-10-18 | 2007-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8278739B2 (en) * | 2006-03-20 | 2012-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor film, semiconductor device, and method for manufacturing thereof |
-
2008
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6480017A (en) * | 1987-09-21 | 1989-03-24 | Agency Ind Science Techn | Manufacture of semiconductor single crystal layer |
JPH07106246A (ja) * | 1993-09-30 | 1995-04-21 | Kyocera Corp | 多結晶シリコン薄膜の形成方法 |
JP2003168646A (ja) * | 2001-12-04 | 2003-06-13 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JP2007005508A (ja) * | 2005-06-23 | 2007-01-11 | Sony Corp | 薄膜トランジスタの製造方法および表示装置の製造方法 |
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