DE602006004913D1 - Verfahren und Vorrichtung zur Herstellung von Halbleitern mittels Laserstrahlung - Google Patents
Verfahren und Vorrichtung zur Herstellung von Halbleitern mittels LaserstrahlungInfo
- Publication number
- DE602006004913D1 DE602006004913D1 DE602006004913T DE602006004913T DE602006004913D1 DE 602006004913 D1 DE602006004913 D1 DE 602006004913D1 DE 602006004913 T DE602006004913 T DE 602006004913T DE 602006004913 T DE602006004913 T DE 602006004913T DE 602006004913 D1 DE602006004913 D1 DE 602006004913D1
- Authority
- DE
- Germany
- Prior art keywords
- laser radiation
- producing semiconductors
- semiconductors
- producing
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005855 radiation Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
- B23K26/0608—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams in the same heat affected zone [HAZ]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
- B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
- B23K26/0738—Shaping the laser spot into a linear shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005133731 | 2005-04-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602006004913D1 true DE602006004913D1 (de) | 2009-03-12 |
Family
ID=36716593
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602006004913T Active DE602006004913D1 (de) | 2005-04-28 | 2006-04-26 | Verfahren und Vorrichtung zur Herstellung von Halbleitern mittels Laserstrahlung |
Country Status (4)
Country | Link |
---|---|
US (2) | US7618882B2 (de) |
EP (1) | EP1716964B1 (de) |
JP (1) | JP5894002B2 (de) |
DE (1) | DE602006004913D1 (de) |
Families Citing this family (67)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1639820B (zh) * | 2001-08-11 | 2010-05-26 | 敦提大学校董事会 | 场致发射背板 |
KR101205191B1 (ko) * | 2003-12-19 | 2012-11-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 집적 회로 |
EP1716964B1 (de) * | 2005-04-28 | 2009-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Verfahren und Vorrichtung zur Herstellung von Halbleitern mittels Laserstrahlung |
WO2007046290A1 (en) * | 2005-10-18 | 2007-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8278739B2 (en) | 2006-03-20 | 2012-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor film, semiconductor device, and method for manufacturing thereof |
DE102006033713A1 (de) * | 2006-05-30 | 2007-12-06 | Osram Opto Semiconductors Gmbh | Organisches lichtemittierendes Bauelement, Vorrichtung mit einem organischen lichtemittierenden Bauelement und Beleuchtungseinrichtung sowie Verfahren zur Herstellung eines organischen lichtemittierenden Bauelements |
US7935584B2 (en) * | 2006-08-31 | 2011-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing crystalline semiconductor device |
US7972943B2 (en) | 2007-03-02 | 2011-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US20090004368A1 (en) * | 2007-06-29 | 2009-01-01 | Weyerhaeuser Co. | Systems and methods for curing a deposited layer on a substrate |
JP2009231277A (ja) * | 2008-02-29 | 2009-10-08 | Semiconductor Energy Lab Co Ltd | 製造装置 |
JP5416987B2 (ja) | 2008-02-29 | 2014-02-12 | 株式会社半導体エネルギー研究所 | 成膜方法及び発光装置の作製方法 |
WO2009107548A1 (en) * | 2008-02-29 | 2009-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Deposition method and manufacturing method of light-emitting device |
JP5079722B2 (ja) * | 2008-03-07 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
JP5238544B2 (ja) * | 2008-03-07 | 2013-07-17 | 株式会社半導体エネルギー研究所 | 成膜方法及び発光装置の作製方法 |
US8182863B2 (en) * | 2008-03-17 | 2012-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Deposition method and manufacturing method of light-emitting device |
US8409672B2 (en) * | 2008-04-24 | 2013-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing evaporation donor substrate and method of manufacturing light-emitting device |
US8463116B2 (en) * | 2008-07-01 | 2013-06-11 | Tap Development Limited Liability Company | Systems for curing deposited material using feedback control |
JP2013512566A (ja) * | 2009-11-24 | 2013-04-11 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | 非周期パルス逐次的横方向結晶化のためのシステムおよび方法 |
DE102009057566A1 (de) * | 2009-12-09 | 2011-06-16 | Osram Opto Semiconductors Gmbh | Vorrichtung für ein Laserabhebeverfahren und Laserabhebeverfahren |
GB201014778D0 (en) * | 2010-09-06 | 2010-10-20 | Baird Brian W | Picosecond laser beam shaping assembly and a method of shaping a picosecond laser beam |
JP5800486B2 (ja) * | 2010-10-06 | 2015-10-28 | 住友化学株式会社 | レーザー切断装置、これを備えるスリッター機、およびレーザー切断方法 |
US9182375B2 (en) * | 2010-10-15 | 2015-11-10 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Measuring apparatus and measuring method for metallic microstructures or material properties |
US8026519B1 (en) * | 2010-10-22 | 2011-09-27 | Ultratech, Inc. | Systems and methods for forming a time-averaged line image |
US9409255B1 (en) | 2011-01-04 | 2016-08-09 | Nlight, Inc. | High power laser imaging systems |
US10095016B2 (en) | 2011-01-04 | 2018-10-09 | Nlight, Inc. | High power laser system |
US9429742B1 (en) | 2011-01-04 | 2016-08-30 | Nlight, Inc. | High power laser imaging systems |
GB2490143B (en) * | 2011-04-20 | 2013-03-13 | Rolls Royce Plc | Method of manufacturing a component |
US9793673B2 (en) | 2011-06-13 | 2017-10-17 | Kla-Tencor Corporation | Semiconductor inspection and metrology system using laser pulse multiplier |
JP5751328B2 (ja) * | 2011-06-29 | 2015-07-22 | 株式会社ニコン | 構造化照明光学系および構造化照明顕微鏡装置 |
US8873596B2 (en) | 2011-07-22 | 2014-10-28 | Kla-Tencor Corporation | Laser with high quality, stable output beam, and long life high conversion efficiency non-linear crystal |
US9720244B1 (en) * | 2011-09-30 | 2017-08-01 | Nlight, Inc. | Intensity distribution management system and method in pixel imaging |
US10197501B2 (en) | 2011-12-12 | 2019-02-05 | Kla-Tencor Corporation | Electron-bombarded charge-coupled device and inspection systems using EBCCD detectors |
US9496425B2 (en) | 2012-04-10 | 2016-11-15 | Kla-Tencor Corporation | Back-illuminated sensor with boron layer |
US9601299B2 (en) | 2012-08-03 | 2017-03-21 | Kla-Tencor Corporation | Photocathode including silicon substrate with boron layer |
WO2014085324A1 (en) * | 2012-11-27 | 2014-06-05 | President And Fellows Of Harvard College | Crystal growth through irradiation with short laser pulses |
US9151940B2 (en) | 2012-12-05 | 2015-10-06 | Kla-Tencor Corporation | Semiconductor inspection and metrology system using laser pulse multiplier |
US9426400B2 (en) | 2012-12-10 | 2016-08-23 | Kla-Tencor Corporation | Method and apparatus for high speed acquisition of moving images using pulsed illumination |
US8929406B2 (en) | 2013-01-24 | 2015-01-06 | Kla-Tencor Corporation | 193NM laser and inspection system |
US9529182B2 (en) | 2013-02-13 | 2016-12-27 | KLA—Tencor Corporation | 193nm laser and inspection system |
US9310248B2 (en) | 2013-03-14 | 2016-04-12 | Nlight, Inc. | Active monitoring of multi-laser systems |
US9608399B2 (en) | 2013-03-18 | 2017-03-28 | Kla-Tencor Corporation | 193 nm laser and an inspection system using a 193 nm laser |
US9478402B2 (en) | 2013-04-01 | 2016-10-25 | Kla-Tencor Corporation | Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor |
US9347890B2 (en) | 2013-12-19 | 2016-05-24 | Kla-Tencor Corporation | Low-noise sensor and an inspection system using a low-noise sensor |
US9748294B2 (en) | 2014-01-10 | 2017-08-29 | Hamamatsu Photonics K.K. | Anti-reflection layer for back-illuminated sensor |
KR102099722B1 (ko) | 2014-02-05 | 2020-05-18 | 엔라이트 인크. | 단일-이미터 라인 빔 시스템 |
US9410901B2 (en) | 2014-03-17 | 2016-08-09 | Kla-Tencor Corporation | Image sensor, an inspection system and a method of inspecting an article |
US9804101B2 (en) | 2014-03-20 | 2017-10-31 | Kla-Tencor Corporation | System and method for reducing the bandwidth of a laser and an inspection system and method using a laser |
JP6193305B2 (ja) | 2014-07-29 | 2017-09-06 | ウルトラテック インク | 高性能線形成光学システム及び方法 |
US9767986B2 (en) | 2014-08-29 | 2017-09-19 | Kla-Tencor Corporation | Scanning electron microscope and methods of inspecting and reviewing samples |
US9419407B2 (en) * | 2014-09-25 | 2016-08-16 | Kla-Tencor Corporation | Laser assembly and inspection system using monolithic bandwidth narrowing apparatus |
US9748729B2 (en) | 2014-10-03 | 2017-08-29 | Kla-Tencor Corporation | 183NM laser and inspection system |
US10083843B2 (en) | 2014-12-17 | 2018-09-25 | Ultratech, Inc. | Laser annealing systems and methods with ultra-short dwell times |
US9860466B2 (en) | 2015-05-14 | 2018-01-02 | Kla-Tencor Corporation | Sensor with electrically controllable aperture for inspection and metrology systems |
US10748730B2 (en) | 2015-05-21 | 2020-08-18 | Kla-Tencor Corporation | Photocathode including field emitter array on a silicon substrate with boron layer |
CN105140372B (zh) * | 2015-07-08 | 2017-12-05 | 上海大学 | 光电器件激光封装的退火方法及其应用 |
US10462391B2 (en) | 2015-08-14 | 2019-10-29 | Kla-Tencor Corporation | Dark-field inspection using a low-noise sensor |
US10778925B2 (en) | 2016-04-06 | 2020-09-15 | Kla-Tencor Corporation | Multiple column per channel CCD sensor architecture for inspection and metrology |
US10313622B2 (en) | 2016-04-06 | 2019-06-04 | Kla-Tencor Corporation | Dual-column-parallel CCD sensor and inspection systems using a sensor |
CN106216834B (zh) * | 2016-08-23 | 2018-02-23 | 东莞市飞越激光设备有限公司 | 一种具有活动分光片的双头激光切割机 |
US10175555B2 (en) | 2017-01-03 | 2019-01-08 | KLA—Tencor Corporation | 183 nm CW laser and inspection system |
KR102516486B1 (ko) * | 2017-12-05 | 2023-04-03 | 삼성디스플레이 주식회사 | 레이저 결정화 장치 |
US11114489B2 (en) | 2018-06-18 | 2021-09-07 | Kla-Tencor Corporation | Back-illuminated sensor and a method of manufacturing a sensor |
US10943760B2 (en) | 2018-10-12 | 2021-03-09 | Kla Corporation | Electron gun and electron microscope |
US11114491B2 (en) | 2018-12-12 | 2021-09-07 | Kla Corporation | Back-illuminated sensor and a method of manufacturing a sensor |
CN109967865B (zh) * | 2018-12-20 | 2020-07-10 | 华中科技大学 | 一种基于注入式电离的超短激光脉冲加工系统及其应用 |
US11848350B2 (en) | 2020-04-08 | 2023-12-19 | Kla Corporation | Back-illuminated sensor and a method of manufacturing a sensor using a silicon on insulator wafer |
KR102577730B1 (ko) * | 2023-03-07 | 2023-09-12 | 국방과학연구소 | 다중 채널 레이저의 광경로 맞춤 시스템 |
Family Cites Families (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0230393A (ja) * | 1988-07-19 | 1990-01-31 | Fujita Corp | レーザ照射ビームの吸収安全装置 |
JP2848052B2 (ja) * | 1991-09-02 | 1999-01-20 | 株式会社ニコン | レーザ加工装置 |
JP2747387B2 (ja) * | 1991-10-04 | 1998-05-06 | 三菱電機株式会社 | レーザ加工装置 |
JPH05172739A (ja) * | 1991-12-19 | 1993-07-09 | Nippon Steel Corp | 超短パルス光を用いた超高速表面振動の測定法 |
JPH0716781A (ja) * | 1993-06-30 | 1995-01-20 | Advantest Corp | レーザ加工装置 |
US5970368A (en) * | 1996-09-30 | 1999-10-19 | Kabushiki Kaisha Toshiba | Method for manufacturing polycrystal semiconductor film |
US6218219B1 (en) * | 1997-09-29 | 2001-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
JP3204307B2 (ja) * | 1998-03-20 | 2001-09-04 | 日本電気株式会社 | レーザ照射方法およびレーザ照射装置 |
GB9819338D0 (en) * | 1998-09-04 | 1998-10-28 | Philips Electronics Nv | Laser crystallisation of thin films |
JP3422290B2 (ja) * | 1999-07-22 | 2003-06-30 | 日本電気株式会社 | 半導体薄膜の製造方法 |
WO2001018852A1 (en) * | 1999-09-10 | 2001-03-15 | The Board Of Trustees Of The University Of Arkansas | Passivation of material using ultra-fast pulsed laser |
US20030222324A1 (en) * | 2000-01-10 | 2003-12-04 | Yunlong Sun | Laser systems for passivation or link processing with a set of laser pulses |
JP2001319891A (ja) * | 2000-05-10 | 2001-11-16 | Nec Corp | 薄膜処理方法及び薄膜処理装置 |
US6955956B2 (en) * | 2000-12-26 | 2005-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
JP2002270510A (ja) | 2000-12-26 | 2002-09-20 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
US7372630B2 (en) * | 2001-08-17 | 2008-05-13 | Semiconductor Energy Laboratory Co., Ltd. | Laser, irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device |
JP2003107262A (ja) * | 2001-09-27 | 2003-04-09 | Fujikura Ltd | 高速光通信用光源 |
JP2003109912A (ja) | 2001-10-01 | 2003-04-11 | Matsushita Electric Ind Co Ltd | レーザアニール装置 |
KR20040052468A (ko) * | 2001-11-12 | 2004-06-23 | 소니 가부시끼 가이샤 | 레이저 어닐 장치 및 박막 트랜지스터의 제조 방법 |
US6664498B2 (en) * | 2001-12-04 | 2003-12-16 | General Atomics | Method and apparatus for increasing the material removal rate in laser machining |
CA2436227A1 (en) * | 2001-12-17 | 2003-06-26 | Electro Scientific Industries, Inc. | Processing a memory link with a set of at least two laser pulses |
JP3563065B2 (ja) * | 2002-03-28 | 2004-09-08 | 三菱電機株式会社 | レーザビーム均一照射光学系 |
JP2004063924A (ja) * | 2002-07-31 | 2004-02-26 | Mitsubishi Heavy Ind Ltd | レーザアニール方法及び装置 |
JP2004128421A (ja) * | 2002-10-07 | 2004-04-22 | Semiconductor Energy Lab Co Ltd | レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法 |
JP2004216430A (ja) * | 2003-01-16 | 2004-08-05 | Ricoh Microelectronics Co Ltd | レーザ孔開け加工方法及びその装置 |
WO2004090195A1 (en) * | 2003-04-07 | 2004-10-21 | Fuji Photo Film Co. Ltd. | Crystalline-si-layer-bearing substrate and its production method, and crystalline si device |
US7476629B2 (en) * | 2003-04-21 | 2009-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Beam irradiation apparatus, beam irradiation method, and method for manufacturing thin film transistor |
US7397592B2 (en) * | 2003-04-21 | 2008-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Beam irradiation apparatus, beam irradiation method, and method for manufacturing a thin film transistor |
JP4503344B2 (ja) | 2003-04-21 | 2010-07-14 | 株式会社半導体エネルギー研究所 | ビーム照射装置および半導体装置の作製方法 |
JP2005014059A (ja) * | 2003-06-26 | 2005-01-20 | Ricoh Co Ltd | 超短パルスレーザ加工法及び加工装置並びに構造体 |
US7208395B2 (en) * | 2003-06-26 | 2007-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device |
US7115514B2 (en) * | 2003-10-02 | 2006-10-03 | Raydiance, Inc. | Semiconductor manufacturing using optical ablation |
EP1537938A3 (de) * | 2003-12-02 | 2009-02-18 | Semiconductor Energy Laboratory Co., Ltd. | Laserbestrahlungsvorrichtung, Laserbestrahlungsverfahren und Verfahren zur Herstellung eines Halbleiterbauelements |
US7831519B2 (en) * | 2003-12-17 | 2010-11-09 | First Data Corporation | Methods and systems for electromagnetic initiation of secure transactions |
EP1547719A3 (de) * | 2003-12-26 | 2009-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Laserbestrahlungsvorrichtung, Laserbestrahlungsverfahren und Verfahren zur Herstellung eines kristallinen Halbleiterfilms |
EP1553643A3 (de) | 2003-12-26 | 2009-01-21 | Sel Semiconductor Energy Laboratory Co., Ltd. | Laserbestrahlungsmethode une Verfahren zur Herstellung einer kristallinen Halbleiter-Schicht |
JP3762773B2 (ja) * | 2004-04-27 | 2006-04-05 | 三菱電機株式会社 | レーザビーム均一照射光学系 |
JP2006041082A (ja) * | 2004-07-26 | 2006-02-09 | Sharp Corp | 半導体薄膜の結晶化装置および半導体薄膜の結晶化方法 |
EP1716964B1 (de) * | 2005-04-28 | 2009-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Verfahren und Vorrichtung zur Herstellung von Halbleitern mittels Laserstrahlung |
-
2006
- 2006-04-26 EP EP06008671A patent/EP1716964B1/de not_active Expired - Fee Related
- 2006-04-26 DE DE602006004913T patent/DE602006004913D1/de active Active
- 2006-04-27 US US11/412,075 patent/US7618882B2/en not_active Expired - Fee Related
-
2009
- 2009-11-04 US US12/611,990 patent/US8309443B2/en active Active
-
2012
- 2012-05-01 JP JP2012104458A patent/JP5894002B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1716964A1 (de) | 2006-11-02 |
US20060246693A1 (en) | 2006-11-02 |
US8309443B2 (en) | 2012-11-13 |
EP1716964B1 (de) | 2009-01-21 |
US7618882B2 (en) | 2009-11-17 |
JP2012182477A (ja) | 2012-09-20 |
JP5894002B2 (ja) | 2016-03-23 |
US20100048036A1 (en) | 2010-02-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE602006004913D1 (de) | Verfahren und Vorrichtung zur Herstellung von Halbleitern mittels Laserstrahlung | |
DE602005015362D1 (de) | Vorrichtung und verfahren zur erzeugung von mikrobläschen | |
DE502007002538D1 (de) | Halbleiterlaser und Verfahren zur Herstellung eines solchen | |
DE602006014341D1 (de) | Vorrichtung und Verfahren zur Immersionslithographie | |
AT10628U2 (de) | Vorrichtung und verfahren zur herstellung von säcken | |
DE602006001816D1 (de) | Vorrichtung und Verfahren zur optischen Tomographie | |
DE602006014546D1 (de) | Verfahren und vorrichtung zur herstellung von turbinen- oder kompressorrädern | |
DE602006003973D1 (de) | Verfahren und Vorrichtung zur Wasserbehandlung | |
DE502006005540D1 (de) | Elektromagnetische strahlung emittierendes optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements | |
ATE516816T1 (de) | Verfahren zur herstellung von impfstoffen | |
ATE516764T1 (de) | Vorrichtung zur haarentfernung mittels laser | |
DE602006004418D1 (de) | Verfahren und Vorrichtung zur Kontrolle eines Objektes | |
DE112006002099A5 (de) | Verfahren und Vorrichtung zur optischen Charakterisierung von Gewebe | |
DE602006005437D1 (de) | Verfahren und Vorrichtung zum Herstellung von Bauteilen | |
DE602005024986D1 (de) | Verfahren und vorrichtung zur generatorsteuerung | |
DE602006004899D1 (de) | Vorrichtung und Verfahren zur Kalibrierung der Abgabe von thermischer Energie bei einem Plasmagerät zur Behandlung von Gewebeoberflächen | |
DE602006000332D1 (de) | Verfahren und Vorrichtung zur Verbesserung von doppelpolarisierten optischen Übertragungsleistung | |
DE602006009038D1 (de) | Verfahren und Vorrichtung zur Inspektion von Turbinendüsensegmenten | |
DE602006002383D1 (de) | Vorrichtung zur erzeugung von graphiken mit mitteln zur vorgangsüberwachung | |
DE602005026202D1 (de) | Verfahren und Vorrichtung zur Regelung eines Motors | |
DE602006016598D1 (de) | Laserbestrahlungsverfahren und vorrichtung dafür | |
DE502006000667D1 (de) | Verfahren und Giessform zur Herstellung eines optischen Halbleitermoduls | |
DE602005023146D1 (de) | Vorrichtung zur Erzeugung eines elektrisch-magnetischen Feldes und Aufbaumethode derselben | |
DE602004009019D1 (de) | Verfahren und Vorrichtung zur Vliesstoffherstellung | |
ATE499849T1 (de) | Verfahren und vorrichtung zur herstellung von rauchartikeln |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |